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氮掺杂二氧化钛-氧化镍双层薄膜的光电致色特性
引用本文:蒋磊,黄辉,王春涛,张文魁,甘永平,陶新永.氮掺杂二氧化钛-氧化镍双层薄膜的光电致色特性[J].物理化学学报,2010,26(2):299-303.
作者姓名:蒋磊  黄辉  王春涛  张文魁  甘永平  陶新永
作者单位:College of Chemical Engineering and Materials Science, Zhejiang University of Technology, Hangzhou 310014, P. R. China; College of Electromechanical Engineering, Zhejiang Ocean University, Zhoushan 316000, Zhejiang Province, P. R. China
基金项目:The project was supported by the National Natural Science Foundation of China (20673100). 国家自然科学基金 
摘    要:以金属钛为靶材、O2/N2/Ar混合气氛为溅射气体,在导电玻璃(ITO)表面磁控溅射一层薄膜,再经300-500℃退火处理制备了氮掺杂TiO2薄膜.采用X射线衍射(XRD)、X光电子能谱(XPS)、扫描电子显微镜(SEM)和紫外-可见吸收光谱等对薄膜的微观结构、光学特性和光电化学性能等进行了研究.进而采用化学沉积的方法在TiO2-xNx薄膜表面沉积上一层多孔NiO薄膜,研究表明,制备的ITO/TiO2-xNx/NiO双层薄膜具有明显的光电致色特性,400℃退火处理的氮掺杂TiO2薄膜具有最高的光电流响应,经氙灯照射1h后,薄膜从无色变成棕色,500nm波长处光透过率从79.0%下降至12.6%.

关 键 词:光电致色  氮掺杂TiO2  氧化镍  光电化学性能  薄膜  
收稿时间:2009-08-17
修稿时间:2009-11-11

Photoelectrochromic Properties of TiO_(2-x)N_x/NiO Bilayer Thin Films
JIANG Lei,HUANG Hui,WANG Chun-Tao,ZHANG Wen-Kui,GAN Yong-Ping,TAO Xin-Yong.Photoelectrochromic Properties of TiO_(2-x)N_x/NiO Bilayer Thin Films[J].Acta Physico-Chimica Sinica,2010,26(2):299-303.
Authors:JIANG Lei  HUANG Hui  WANG Chun-Tao  ZHANG Wen-Kui  GAN Yong-Ping  TAO Xin-Yong
Institution:College of Chemical Engineering and Materials Science, Zhejiang University of Technology, Hangzhou 310014, P. R. China; College of Electromechanical Engineering, Zhejiang Ocean University, Zhoushan 316000, Zhejiang Province, P. R. China
Abstract:N-doped TiO_2 films were prepared on indium tin oxide(ITO) conducting glass by dc-reactive magnetron sputtering using a Ti target in an O_2/N_2/Ar mixture gas in combination with heat-treatment at 300-500 ℃. The microstructure, optical and photoelectrochemical properties of the as-formed films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy(XPS), scanning electron microscopy(SEM) and UV-Vis transmittance spectrum. Highly porous NiO was deposited onto the N-doped TiO_2 layer by chemical bath deposition to obtain ITO/ TiO_(2-x)N_x/NiO bilayer thin films and they exhibited excellent and noticeable photoelectrochromism. The TiO_(2-x)N_x film annealed at 400 ℃ showed the highest photocurrent response. The color of films changed from colorless to brown and the transmittance varied from 79.0% to 12.6% at 500 nm after 1 h of irradiation.
Keywords:Photoelectrochromism  N-dopedTiO_2  NiO  Photoelectrochemicalproperty  Thin film
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