| 电沉积－退火工艺制备铜铟硒太阳能电池薄膜及表征 |
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| 引用本文： | 张中伟,郭宏艳,李纪,朱长飞.电沉积－退火工艺制备铜铟硒太阳能电池薄膜及表征[J].化学物理学报,2011,24(2):225-230. |
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| 作者姓名： | 张中伟 郭宏艳 李纪 朱长飞 |
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| 作者单位： | 中国科学技术大学材料科学与工程系，中国科学院能量转换材料重点实验室，合肥230026;中国科学技术大学材料科学与工程系，中国科学院能量转换材料重点实验室，合肥230026;中国科学技术大学材料科学与工程系，中国科学院能量转换材料重点实验室，合肥230026;中国科学技术大学材料科学与工程系，中国科学院能量转换材料重点实验室，合肥230026 |
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| 摘 要： | 利用电沉积硒气氛下后续退火的工艺制备出了高结晶质量的铜铟硒薄膜．通过X射线衍射、扫描电子显微镜、拉曼光谱、紫外-可见-近红外光谱和阻抗谱技术对退火后的铜铟硒薄膜进行表征，结果表明530 oC硒化退火后的铜铟硒薄膜具有四方的黄铜矿晶体结构，晶粒尺寸达到微米量级，光学带隙为0.98 eV，经过KCN溶液去除表面高导电性的铜硒化合物后铜铟硒薄膜的载流子浓度在1016 cm-3量级．利用硒化退火的铜铟硒薄膜作为光吸收层制备了结构为AZO/i-ZnO/CdS/CIS/Mo/glass的太阳能电池，在AM1.5光照条件下对其电流-电压特性测试后发现面积为0.2 cm2的电池可以达到0.96％的能量转换效率，并对限制电池效率的原因做出了初步的分析和讨论.
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| 关 键 词： | 铜铟硒薄膜，电沉积，退火，太阳能电池 |
| 收稿时间： | 2010/11/27 0:00:00 |
Preparation and Characterization of Electrodeposited-Annealed CuInSe2 Thin Films for Solar Cells |
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| Zhong-wei Zhang,Hong-yan Guo,Ji Li and Chang-fei Zhu.Preparation and Characterization of Electrodeposited-Annealed CuInSe2 Thin Films for Solar Cells[J].Chinese Journal of Chemical Physics,2011,24(2):225-230. |
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| Authors: | Zhong-wei Zhang Hong-yan Guo Ji Li and Chang-fei Zhu |
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| Institution: | CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi-neering, University of Science and Technology of China, Hefei 230026, China;CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi-neering, University of Science and Technology of China, Hefei 230026, China;CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi-neering, University of Science and Technology of China, Hefei 230026, China;CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi-neering, University of Science and Technology of China, Hefei 230026, China |
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| Abstract: | CuInSe2 (CIS) films with good crystalline quality were synthesized by electrodeposition followed by annealing in Se vapor at 530 oC. The morphology, composition, crystal structure, optical and electrical properties of the CIS films were investigated by scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, Raman spectroscopy, UV-VIS-NIR spectroscopy, and admittance spectroscopy. The results revealed that the annealed CIS films had chalcopyrite structure and consisted of relatively large grains in the range of 500-1000 nm and single grain of films extend usually through the whole film thickness. The band gap of CIS films was 0.98 eV and carrier concentration was in the order of 1016 cm-3 after etching the Cu-Se compounds on the film surface. Solar cells with the structure of AZO/i-ZnO/CdS/CIS/Mo/glass were fabricated. Current density vs. voltage test under standard reported condition showed the solar cells with an area of 0.2 cm2 had a conversion efficiency of 0.96%. The underlying physics was also discussed. |
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| Keywords: | CuInSe2 film Electrodeposition Annealing Solar cell |
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