全文获取类型
收费全文 | 7146篇 |
免费 | 1772篇 |
国内免费 | 1628篇 |
专业分类
化学 | 4407篇 |
晶体学 | 481篇 |
力学 | 670篇 |
综合类 | 82篇 |
数学 | 97篇 |
物理学 | 4809篇 |
出版年
2024年 | 5篇 |
2023年 | 31篇 |
2022年 | 163篇 |
2021年 | 182篇 |
2020年 | 161篇 |
2019年 | 142篇 |
2018年 | 183篇 |
2017年 | 257篇 |
2016年 | 336篇 |
2015年 | 261篇 |
2014年 | 346篇 |
2013年 | 687篇 |
2012年 | 524篇 |
2011年 | 612篇 |
2010年 | 540篇 |
2009年 | 624篇 |
2008年 | 558篇 |
2007年 | 606篇 |
2006年 | 632篇 |
2005年 | 505篇 |
2004年 | 469篇 |
2003年 | 340篇 |
2002年 | 322篇 |
2001年 | 282篇 |
2000年 | 273篇 |
1999年 | 234篇 |
1998年 | 202篇 |
1997年 | 199篇 |
1996年 | 169篇 |
1995年 | 152篇 |
1994年 | 121篇 |
1993年 | 84篇 |
1992年 | 87篇 |
1991年 | 67篇 |
1990年 | 54篇 |
1989年 | 28篇 |
1988年 | 30篇 |
1987年 | 21篇 |
1986年 | 9篇 |
1985年 | 12篇 |
1984年 | 5篇 |
1983年 | 5篇 |
1982年 | 10篇 |
1981年 | 4篇 |
1979年 | 3篇 |
1977年 | 2篇 |
1976年 | 1篇 |
1975年 | 3篇 |
1974年 | 1篇 |
1972年 | 1篇 |
排序方式: 共有10000条查询结果,搜索用时 359 毫秒
31.
32.
L.-H. Tang P. Smilauer D.D. Vvedensky 《The European Physical Journal B - Condensed Matter and Complex Systems》1998,2(3):409-412
Two types of mechanisms are proposed for mound coarsening during unstable epitaxial growth: stochastic, due to deposition
noise, and deterministic, due to mass currents driven by surface energy differences. Both yield the relation H=(RWL)2 between the typical mound height W, mound size L, and the film thickness H. An analysis of simulations and experimental data shows that the parameter R saturates to a value which discriminates sharply between stochastic () and deterministic () coarsening. We derive a scaling relation between the coarsening exponent 1/z and the mound-height exponent which, for a saturated mound slope, yields .
Received: 11 November 1997 / Revised in final form: 28 November 1997 /
Accepted: 28 November 1997 相似文献
33.
通过光谱响应特性实验和记录/读出图像实验,研究了基因变异型细菌视紫红质(BRD96N)分子膜对单色光的光调制特性.发现BRD96N分子膜在550nm—600nm范围内对调制光有吸收增强的现象,且对此范围内不同波长的单色光其调制程度有差异.利用曲线拟和方法发现550nm—600nm吸收增强的变化过程分为快过程和慢过程,其对应的时间常数分别为30s和5min.利用强度调制器的吸收强度与图像灰度之间的关系,分析了560nm—600nm范围内出现图像反转的实验现象.
关键词:
细菌视紫红质D96N分子膜
光谱响应
吸收增强现象
图像反转现象 相似文献
34.
J. -Ph. Jay J. Ben Youssef H. Le Gall 《Journal of magnetism and magnetic materials》2002,240(1-3):287-290
The dynamic response of trilayer magnetoresistive permalloy/Cu/Co films was studied by high-frequency permeability spectra measurements. The resonance frequency is shown to depend on the interlayer copper thickness. This dependence is related to exchange coupling between permalloy and cobalt and the interaction field is estimated using the Landau–Lifschitz–Gilbert model. 相似文献
35.
36.
用过氧聚钨酸(PPTA)水溶液,通过离心涂膜法在显微镜载玻片上制备了具有光滑表面且厚度为100nm的PPTA薄膜,利用PPTA薄膜在紫外光照下可研制光栅以及其它光学元件的薄膜材料,具有很高的利用价值。 相似文献
37.
Temperature effects on deposition rate of silicon nitride films were characterized by building a neural network prediction model. The silicon nitride films were deposited by using a plasma enhanced chemical vapor deposition system and process parameter effects were systematically characterized by 26−1 fractional factorial experiment. The process parameters involved include a radio frequency power, pressure, temperature, SiH4, N2, and NH3 flow rates. The prediction performance of generalized regression neural network was drastically improved by optimizing multi-valued training factors using a genetic algorithm. Several 3D plots were generated to investigate parameter effects at various temperatures. Predicted variations were experimentally validated. The temperature effect on the deposition rate was a complex function of parameters but N2 flow rate. Larger decreases in the deposition rate with the temperature were only noticed at lower SiH4 (or higher NH3) flow rates. Typical effects of SiH4 or NH3 flow rate were only observed at higher or lower temperatures. A comparison with the refractive index model facilitated a selective choice of either SiH4 or NH3 for process optimization. 相似文献
38.
Curved Ferroelectric Liquid Crystal Matrix Displays Driven by Field-Sequential-Color and Active-Matrix Techniques 总被引:1,自引:0,他引:1
Hideo Fujikake Hiroto Sato Takeshi Murashige Yoshihide Fujisaki Taiichiro Kurita Tadahiro Furukawa Fumio Sato 《Optical Review》2006,13(1):14-19
This paper describes a curved field-sequential-color matrix display using fast-response ferroelectric liquid crystal. Black
matrix and transparent electrode patterns were formed on a thin plastic substrate by a transfer method from a glass substrate.
While a composite film of liquid crystal and micro-polymers of walls and fibers was formed between the flexible substrates
by printing, laminating and curing processes of a solution of monomers and liquid crystal, the mechanical stability was enhanced
by use of multi-functional monomers to form large display panels. The image pixels of the matrix panel were driven by an active
matrix scheme using an external switch transistor array at a frequency of 180 Hz for intermittent three-primary-color backlight
illumination. The flexible A4-paper-sized color display with 24 × 16 pixels and 60 Hz field frequency was demonstrated by
illuminating it with sequential three-primary-color lights from light-emitting diodes of the backlight. Our display system
is useful in various information displays because of its freedom of setting and location. 相似文献
39.
40.
Yasumitsu Matsuo Takehiko Ijichi Hironori Yamada Junko Hatori Seiichiro Ikehata 《Central European Journal of Physics》2004,2(2):357-366
We have fabricated a field effect transistor (FET) based on an organic ferroelectric insulator and molecular conductor, and
investigated the electrical properties and memory effects on the PEN-FET. We have observed a drastic change in the drain current
at around the coercive electric fieldE
c
of the organic ferroelectric insulator in not only a FET (PEN-FET) based on a pentacene (PEN) film but also a FET (IPEN-FET)
based on an iodine doped PEN film. The magnitude of the change of the drain current for the IPEN-FET is 200 times larger than
that for the PEN-FET. It is expected from these results that the PEN-FET (especially the IPEN-FET) is an improvement in such
devices, since it operates at a low gate electric field accompanied by the appearance of the spontaneous polarization in the
organic ferroelectric insulator. In addition, we have found that the drain current for the PEN-FET does not return to the
initial drain current ofE
G
=0 V/cm for more than one week, even if the gate electric field is changed to 0 V/cm from 500 V/cm(>E
c
). From these results, it is suggested that the PEN-FET becomes a memory device. 相似文献