Conductance Study of Binding of Some Rb+ and Cs+ Ions by Macrocyclic Polyethers in Acetonitrile Solution

A conductance study of the interaction between Rb+ and Cs+ ions and18-crown-6 (18C6), dicyclohexyl-18-crown-6 (DC18C6), dibenzo-18-crown-6 (DB18C6),dibenzo-24-crown-8 (DB24C8), and dibenzo-30-crown-10 (DB30C10) inacetonitrile solution has been carried out at various temperatures. The formationconstants of the resulting 1:1 complexes were determined from the molarconductance-mole ratio data and found to vary in the orderDC18C6 > 18C6 > DB30C10 > DB18C6 DB24C8for Rb+ ion andDC18C6 > 18C6 > DB30C10 DB24C8 > DB18C6for Cs+ ion. The enthalpy and entropy of complexation were determined fromthe temperature dependence of the formation constants. The complexes with the18-crowns are both enthalpy and entropy stabilized while, in the case of largecrown ethers, the corresponding complexes are enthalpy stabilized but entropydestabilized.     

Dc conductance of ordered and disordered silicene superlattices

This paper studies the conductance of charge carriers through silicene-based superlattices consisting of monolayer silicene by means of transfer matrix method. At first, we consider the ordered superlattices and drive analytically the transmission probability of Dirac fermions. We show that the number of resonance picks increases with increasing the number of superlattice barriers. In order to the best understand of the appearance of the picks, we exactly studied transmission properties of the silicene superlattice. Also, the effect of disorder on the probability of transmission through the system of various sizes is studied. The short-range correlated disorder is applied on the thickness of electron doped silicene strips as quantum barriers which fluctuates around their mean values. We show that the oscillating conductance as a function of barriers hight suppresses with imposing the disorder in the silicene superlattice. Also, the effect of structural parameters on the conductance of the system is studied.     

Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique

Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor(MOS) structures. Two types of device structures, namely, the recessed gate structure(RGS) and the normal gate structure(NGS), are studied in the experiment. Interface trap parameters including trap density Dit, trap time constant τit, and trap state energy ETin both devices have been determined. Furthermore,the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching(RIE).     

Organometallic Molecular Wires with Thioacetylene Backbones,trans-{RS-(C≡C)n}2Ru(phosphine)4: High Conductance through Non-Aromatic Bridging Linkers

In this work, the design, synthesis, and single-molecule conductance of ethynyl- and butadiynyl-ruthenium molecular wires with thioether anchor groups [RS=n-C₆H₁₃S, p-tert-Bu−C₆H₄S), trans-{RS−(C≡C)_n}₂Ru(dppe)₂ (n=1 ( 1^R ), 2 ( 2^R ); dppe: 1,2-bis(diphenylphosphino)ethane) and trans-(n-C₆H₁₃S−C≡C)₂Ru{P(OMe)₃}₄ 3^hex ] are reported. Scanning tunneling microscope break-junction study has revealed conductance of the organometallic molecular wires with the thioacetylene backbones higher than that of the related organometallic wires having arylethynylruthenium linkages with the sulfur anchor groups, trans-{p-MeS−C₆H₄-(C≡C)_n}₂Ru(phosphine)₄ 4 ⁿ (n=1, 2) and trans-(Th−C≡C)₂Ru(phosphine)₄ 5 (Th=3-thienyl). It should be noted that the molecular junctions constructed from the butadiynyl wire 2^R , trans-{ Au −RS−(C≡C)₂}₂Ru(dppe)₂ ( Au : gold metal electrode), show conductance comparable to that of the covalently linked polyynyl wire with the similar molecular length, trans-{ Au −(C≡C)₃}₂Ru(dppe)₂ 6³ . The DFT non-equilibrium Green's function (NEGF) study supports the highly conducting nature of the thioacetylene molecular wires through HOMO orbitals.     

Micellization of Sodium Dodecyl Sulfate in Glycerol Aqueous Mixtures

The effect of glycerol on both micellar formation and the structural evolution of the sodium dodecyl sulfate (SDS) aggregates in the context of the action mechanism of the cosolvent has been studied. The critical micelle concentration and the degree of counterion dissociation of the surfactant over a temperature range from 20°C to 40°C were obtained by the conductance method. The thermodynamic parameters of micellization were estimated by using the equilibrium model of micelle formation. The analysis of these parameters indicated that the lower aggregation of the surfactant is mainly due to a minor cohesive energy of the mixed solvent system in relation to the pure water. The effect of glycerol on the mean aggregation number of the micelles of SDS was analyzed by the static quenching method. It was found that the aggregation number decreased with the glycerol content. This reduction in the micellar size seems to be controlled by an increase in the surface area per headgroup, which was ascribed to a participation of glycerol in the micellar solvation layer. Studies on the micropolarity of the aggregates, as sensed by the probe pyrene, indicated that this microenvironmental parameter is almost unaffected by the presence of glycerol in the mixture. However, an increase in the micellar microviscosity at the surface region was observed from the photophysical behavior of two different probes, rhodamine B and auramine O. These results suggest a certain interaction of the cosolvent in the micellar solvation of SDS micelles.     

石墨烯基生物分子传感器件的第一性原理研究

基于第一性原理模拟, 我们构建了一种具有石墨烯电极的纳米间隙生物分子传感器件的理论模型. 研究发现,当碱基分子胞嘧啶、甲基化胞嘧啶和羟甲基化胞嘧啶分别通过器件时, 器件横向电流的大小差异约有1个数量级, 器件对此类分子具有一定的分辨能力. 分子之间的区分度大小受单链脱氧核糖核酸(DNA)中相邻碱基分子间的相互作用及碱基分子构型的影响. 研究工作表明, 此类石墨烯基分子传感器可准确高效地区分具有不同结构的碱基分子, 为准确定位DNA链中的变异碱基分子提出了一种新的思路.     

A scheme for a topological insulator field effect transistor

We propose a scheme for a topological insulator field effect transistor. The idea is based on the gate voltage control of the Dirac fermions in a ferromagnetic topological insulator channel with perpendicular magnetization connecting to two metallic topological insulator leads. Our theoretical analysis shows that the proposed device displays a switching effect with high on/off current ratio and a negative differential conductance with a good peak to valley ratio.     

单分子电导测量技术及其影响因素

Molecular electronics is an important field for the application of nanotechnologies with an ultimate goal of building functional devices using single molecules or molecular arrays to realize the same functionality as macroscopic devices. To attain this goal, reliable techniques for measuring and manipulating electron transfer processes through single molecules are essential. There are various techniques and many environmental factors influencing single-molecule electronic conductance measurements. In this review, we first provide a detailed introduction and classification of the current well-accepted techniques in this field for measuring single-molecule conductance. All available techniques are summarized into two categories: the fixed junction technique and break junction technique. The break junction technique involves repeatedly forming and breaking molecular junctions by mechanically controlling a pair of electrodes moving into and out of contact in the presence of target molecules. Single-molecule conductance can be determined from the conductance plateaus that appear in typical conductance decay traces when molecules bind two electrodes during their separation process. In contrast, the fixed junction technique is to fix the distance between a pair of electrodes and measure the conductance fluctuations when a single molecule binds the two electrodes stochastically. Both techniques comprise different application methods and have been employed preferentially by different groups. Specific features of both techniques and their intrinsic advantages are compared and summarized in Section 4.     

Anisotropic Electron Conductance Driven by Reaction Byproducts on a Porous Network of Dibromobenzothiadiazole on Cu(110)

Efficiency in charge‐transport is a fundamental but demanding prerequisite to allow better exploitation of molecular functionalities in organic electronics and energy‐conversion systems. Here, we report on a mechanism that enables a one‐dimensional conductance structure by connecting discrete molecular states at 2.1 eV through the pores of a metal–organic network on Cu(110). Two adjacent, periodic and isoenergetic contributions, namely a molecular resonance and the confined surface‐state, add‐up leading to anisotropic structures, as channels, observable in real‐space conductance images. The adsorption configurations of Br atoms, inorganic byproduct of the redox‐reacted 4,7‐dibromobenzo[c]‐1,2,5‐thiadiazole (2Br‐BTD) molecules on the copper surface, drive the confinement of the Cu surface state within the pores and critically control the channel continuity. Small displacements of the Br atoms change the local surface potential misaligning the energy levels. This work visualizes the effect of order‐disorder transitions caused by the movement of single atoms in the electronic properties of two‐dimensional organic networks.     

Study of magnetotransport properties of interacting quantum dot systems using the ECA method

We study the magnetotransport of the interacting QD system in a magnetic field using the numerical method of embedded-cluster approximation (ECA). The spin-resolved conductances display different magnetic field dependences for different transport regimes. Through comparison of conductance polarization, the mixed-valence regime shows the largest polarization. The spin-resolved conductance as a function of the ratio between the magnetic field and Kondo temperature H/TK is found to exhibit an approximate universal behavior in the Kondo regime. We also investigate conductance dependence on interaction strength and find interesting inversion of sign of polarization in some cases.