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11.
利用半导体光放大器进行光脉冲消基座的理论研究   总被引:5,自引:4,他引:1  
提出了一种利用半导体光放大器(SOA)联合可调谐光滤波器进行高阶孤子压缩消基座的新方法.进行了详尽的理论分析和优化.数值计算表明,在一定条件下,这种方法能够在不展宽脉冲的前提下,对基座进行有效地抑制.  相似文献   
12.
The nanocrystal samples of titanium dioxide doped with europium ion (Eu3+/TiO2 nanocrystal) are synthesized by the sol-gel method with hydrothermal treatment. The Eu3+ contents (molar ratio) in the samples are 0, 0.5%, 1%, 2%, 3% and 4%. The X-ray diffraction, UV-Vis spectroscopy data and scanning electron microscope image show that crystallite size is reduced by the doping of Eu3+ into TiO2. Comparing the Raman spectra of TiO2 with Eu3+/TiO2 (molar ratio Eu3+/TiO2=1%, 2% and 4%) nanocrystals at different annealing temperatures indicates that the anatase-to-rutile phase transformation temperatures of Eu3+/TiO2 nanocrystals are higher than that of TiO2. This is due to the formation of Eu-O-Ti bonds on the surface of the TiO2 crystallite, as characterized by the X-ray photoelectron spectroscopy. The photoluminescence spectra of TiO2 in Eu3+/TiO2 nanocrystals are interpreted by the surface self-trapped and defect-trapped exciton relaxation. The photoluminescence of Eu3+ in Eu3+/TiO2 nanocrystals has the strongest emission intensity at 2% of Eu3+ concentration.  相似文献   
13.
Pilkington Glass Activ™ represents a possible suitable successor to P25 TiO2, especially as a benchmark photocatalyst film for comparing other photocatalyst or PSH self-cleaning films. Activ™ is a glass product with a clear, colourless, effectively invisible, photocatalytic coating of titania that also exhibits PSH. Although not as active as a film of P25 TiO2, Activ™ vastly superior mechanical stability, very reproducible activity and widespread commercial availability makes it highly attractive as a reference photocatalytic film. The photocatalytic and photo-induced superhydrophilitic (PSH) properties of Activ™ are studied in some detail and the results reported. Thus, the kinetics of stearic acid destruction (a 104 electron process) are zero order over the stearic acid range 4–129 monolayers and exhibit formal quantum efficiencies (FQE) of 0.7×10−5 and 10.2×10−5 molecules per photon when irradiated with light of 365±20 and 254 nm, respectively; the latter appears also to be the quantum yield for Activ™ at 254 nm. The kinetics of stearic acid destruction exhibit Langmuir–Hinshelwood-like saturation type kinetics as a function of oxygen partial pressure, with no destruction occurring in the absence of oxygen and the rate of destruction appearing the same in air and oxygen atmospheres. Further kinetic work revealed a Langmuir adsorption type constant for oxygen of 0.45±0.16 kPa−1 and an activation energy of 19±1 kJ mol−1. A study of the PSH properties of Activ™ reveals a high water contact angle (67°) before ultra-bandgap irradiation reduced to 0° after prolonged irradiation. The kinetics of PSH are similar to those reported by others for sol–gel films using a low level of UV light. The kinetics of contact angle recovery in the dark appear monophasic and different to the biphasic kinetics reported recently by others for sol–gel films [J. Phys. Chem. B 107 (2003) 1028]. Overall, Activ™ appears a very suitable reference material for semiconductor film photocatalysis.  相似文献   
14.
We synthesized a new intercalation compound, 1,5-diaminonaphathalene(DAN)-saponite where intercalated DAN molecules were shown to have a formal charge of +0.67 The measurement of optical diffuse reflectance spectra revealed the formation of electronic bands with a gap of ca. 1 eV suggesting semiconducting behaviour of this system. From ESR measurements, the radical formation in DAN-saponite was confirmed and the spin concentration was determined to be 1 spin per 200 and 300 DAN-molecules at 290 and 7.9 K, respectively. This temperature dependence of the spin density also implies the semiconductive nature of DAN-saponite.  相似文献   
15.
We have used the periodic quantum-mechanical method with density functional theory at the B3LYP level in order to study TiO2/Sn doped (1 1 0) surfaces and have investigated the structural, electronic and energy band properties of these oxides. Our calculated relaxation directions for TiO2 is the experimental one and is also in agreement with other theoretical results. We also observe for the doped systems relaxation of lattice positions of the atoms. Modification of Sn, O and Ti charges depend on the planes and positions of the substituted atoms. Doping can modify the Fermi levels, energy gaps as well as the localization and composition of both valence and conduction band main components. Doping can also modify the chemical, electronic and optical properties of these oxides surfaces increasing their suitability for use as gas sensors and optoelectronic devices.  相似文献   
16.
We report a theoretical analysis of the phonon thermal conductance, κ(T), for single wall carbon nanotubes (SWCN). In a range of low temperatues up to 100 K, κ(T) of perfect SWCN is found to increase with temperature, approximately, in a parabolic fashion. This is qualitatively consistent with recent experimental measurements where the tube-tube interactions are negligibly weak. When the carbon-carbon bond length is slightly varied, κ(T) is found to be qualitatively unaltered which implies that the anharmonic effect does not change the qualitative behavior of κ(T). Received 12 June 2001  相似文献   
17.
We studied shape relaxation of nano-fractal islands, during annealing, after their growth from antimony cluster deposition on graphite surface. Annealing at 180°C shows evidence of an increase of the fractal branch width with time followed by branch fragmentation, without changing the fractal dimension. The time evolution of the width of the arm suggests the surface self-diffusion mechanism as the main relaxation process. With Monte Carlo simulations, we confirmed the observed behavior. Comparison is done with our previous results on fragmentation of nano-fractal silver islands when impurity added to the incident cluster promotes rapid fragmentation by surface self-diffusion enhancement [1].  相似文献   
18.
We study the interaction between tin(II) porphyrin (SnPor) with platinum and non-precious Group 8B metals (iron, cobalt and nickel) by density functional theory and discuss the electronic properties of the resulting products. We also model the interaction of the resulting compounds with water where applicable. Our studies indicate that, SnPor-Ni possesses electronic properties similar to SnPor-Pt, suggesting that it may possess similar photocatalytic properties for reduction reactions, such as converting water to hydrogen gas.  相似文献   
19.
设计了一种基于半导体光放大器(SOA)和非线性光学环镜(NOLM)的光脉冲放大与压缩的模型。数值研究结果表明:在NOLM中,当调节合适的控制脉冲的输入和初始时延时,具有较低峰值功率、宽度为几十皮秒的高斯信号脉冲经此模型放大压缩后,可以得到脉冲峰值增益高、脉冲宽度窄以及基本无基座的高质量超短信号光脉冲。  相似文献   
20.
玻璃中CdSeS纳米晶体的生长及其性能   总被引:2,自引:0,他引:2       下载免费PDF全文
王引书  孙萍  丁硕  罗旭辉  李娜  王若桢 《物理学报》2002,51(12):2892-2895
对掺有镉、硒、硫的玻璃在500—800℃退火2—24h,生长了不同尺寸的CdSxSe1x纳米晶体.用分光光度计和光致发光光谱(PL)分析了纳米晶体的性能.退火温度低于550℃,纳米晶体处于成核阶段,600—625℃处于正常扩散生长阶段,700—800℃处于竞争生长阶段;而650℃处于两种生长阶段之间.虽然650℃下生长的纳米晶体的尺寸分布比较窄,但纳米晶体的尺寸随退火时间的延长几乎不变,在该温度改变退火时间很难改变纳米晶体的平均尺寸.在所有样品中出现了深能级缺陷,在650℃退火时间小于4h或大于16h有利 关键词: 纳米晶体 生长机理 深能级缺陷  相似文献   
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