玻璃中CdSeS纳米晶体的生长及其性能

对掺有镉、硒、硫的玻璃在500—800℃退火2—24h,生长了不同尺寸的CdSxSe1x纳米晶体.用分光光度计和光致发光光谱(PL)分析了纳米晶体的性能.退火温度低于550℃,纳米晶体处于成核阶段,600—625℃处于正常扩散生长阶段,700—800℃处于竞争生长阶段;而650℃处于两种生长阶段之间.虽然650℃下生长的纳米晶体的尺寸分布比较窄,但纳米晶体的尺寸随退火时间的延长几乎不变,在该温度改变退火时间很难改变纳米晶体的平均尺寸.在所有样品中出现了深能级缺陷,在650℃退火时间小于4h或大于16h有利 关键词： 纳米晶体 生长机理 深能级缺陷     

Magnetic Properties of Diluted Magnetic Semiconductor Zn1-xMnxO Nanowires

Zn1-xMnxO nanowires (x = 0.035 and 0.13) have been synthesized by the vapour phase growth at 500℃. The compositional lines scanned in the energy dispersive x-ray spectroscopy (EDX) modes exhibit the homogeneous distribution of manganese in ZnO nanowires, The magnetic property measurement results show that the magnetization changes linearly with the field at high temperature, while it changes nonlinearly at low temperature,and all of the data can be well fitted by the modified Brillouin function. The magnetization of the Zn1-xMnxO nanowires show paramagnetic the behaviour for x -- 0.035 while it exhibits the ferromagnetic behaviour for x=0.13 at 5 K, which indicate that the ferromagnetism might be related to the manganese content.