DVC analysis of a polymer material subjected to tensile loading with synchrotron radiation tomography

Subsurface deformation behavior of a polymeric material is studied through the digital volume correlation (DVC) technique. Fundamental principles of the DVC technique are presented and the supplemental state-of-the-art algorithmic schemes to improve the efficiency and accuracy of the DVC analysis are also introduced. Tensile tests on an epoxy material are performed in conjunction with synchrotron radiation tomography. In order to create randomly distributed grayscale values in the tomograms for the following image analysis, microscale high-density particles are embedded when the epoxy specimens are fabricated. 3D tomographic images taken at multiple loading steps are utilized for the DVC analysis. The performance of the present DVC analysis is evaluated with the experimental data.     

低表面浓度磷掺杂的高方阻P-N结发射极制备工艺

制备P-N结发射极的常规扩散工艺主要包括预淀积和高温推阱两个步骤。本文采用在高温推阱之后施加一步保温过程的工艺方案,在p型多晶硅片上制备了低表面浓度磷掺杂的高方阻发射极,研究了不同保温温度对P-N结发射极的方阻和磷原子掺杂分布的影响。结果表明,当完成高温推阱后,在650~750 ℃温度范围内施加保温工艺所得P-N结的方阻值反向升高,同时二次离子质谱(SIMS)测试结果表明,硅片表层区域的磷原子掺杂浓度相应降低。与常规扩散工艺相比,采用在700 ℃下保温15 min时所得P-N结的方阻升高约3.2 Ω/□,所得相应太阳能电池光电转换效率E_ff达到18.69%,比产线工艺提高约0.23%。     

Fabrication of in situ alkali doped flexible CIGSSe solar cells by using aqueous spray deposition

Flexible Cu(In,Ga)(S,Se)₂ (CIGSSe) solar cells were fabricated on stainless steel foil by using aqueous spray deposition method. Since stainless steel foil is used, external alkali doping is necessary to passivate defects in CIGSSe absorber. We investigated effects of (Na, K) co-doping and selenization temperature on solar cell performance. With co-doping of Na and K, defect states were passivated significantly and highest power conversion efficiency (PCE) was obtained. However, at higher K concentration of more than 0.5%, different growth mode of CIGSSe was observed and deep defect states were developed, decreasing PCE. In addition, selenization temperature effects were studied by varying selenization temperatures. With higher selenization temperature, defect passivation for the CIGSSe absorber was more apparent, which facilitated increase of open circuit voltage. However, short circuit current was observed to be decreased at higher selenization temperature of 570 °C. This work demonstrates in-situ alkali co-doping into CIGSSe absorber with simple and low-cost spray deposition in an air environment.     

Ge掺杂β-Ga2O3晶体的发光性能研究

采用浮区法(FZ)生长Ge掺杂β-Ga2O3晶体,利用XRD和Raman光谱研究了掺杂对晶体结构的影响.透射光谱测试表明,随着Ge离子掺杂浓度增加,Ge∶ β-Ga2O3晶体光学带隙增大.在4.67 eV紫外光激发下,Ge∶ β-Ga2O3晶体的发光强度与β-Ga2O3晶体相当,发光衰减时间比β-Ga2O3晶体更快.     

Convection-Flow-Assisted Preparation of a Strong Electron Dopant,Benzyl Viologen,for Surface-Charge Transfer Doping of Molybdenum Disulfide

Transition metal dichalcogenides (TMDCs) have received attention as atomically thin post-silicon semiconducting materials. Tuning the carrier concentrations of the TMDCs is important, but their thin structure requires a non-destructive modulation method. Recently, a surface-charge transfer doping method was developed based on contacting molecules on TMDCs, and the method succeeded in achieving a large modulation of the electronic structures. The successful dopant is a neutral benzyl viologen (BV⁰); however, the problem remains of how to effectively prepare the BV⁰ molecules. A reduction process with NaBH₄ in water has been proposed as a preparation method, but the NaBH₄ simultaneously reacts vigorously with the water. Here, a simple method is developed, in which the reaction vial is placed on a hotplate and a fragment of air-stable metal is used instead of NaBH₄ to prepare the BV⁰ dopant molecules. The prepared BV⁰ molecules show a strong doping ability in terms of achieving a degenerate situation of a TMDC, MoS₂. A key finding in this preparation method is that a convection flow in the vial effectively transports the produced BV⁰ to a collection solvent. This method is simple and safe and facilitates the tuning of the optoelectronic properties of nanomaterials by the easily-handled dopant molecules.     

Effect of annealing in N2 atmosphere on net acceptor concentration in ZnSe:N grown by MOCVD

Annealing effect on net acceptor concentration in ZnSe:N is investigated. ZnSe:N homo-epitaxial layer was grown at 823 K by MOCVD using ammonia (NH₃) as a dopant source. Photoluminescence (PL) spectra measured on as-grown layer exhibited the strong deep donor–acceptor pair (D^dAP) emission and the weak I₁^N emission line. In order to enhance the activation of nitrogen in ZnSe epitaxial layer, sample was annealed at the 823 K in nitrogen (N₂) and hydrogen (H₂) atmosphere. Only the annealing in nitrogen atmosphere increased I₁^N emission intensity indicate the activation of nitrogen acceptor. And net acceptor concentration was estimated to be 3 × 10¹⁷cm⁻³ by C–V measurements. This activation mechanism is interpreted as hydrogen is released from N–H bonds during annealing in nitrogen atmosphere.     

多晶Sr2Fe1－xAlxMoO6的晶粒内低场磁电阻效应

用传统的固相反应法合成了Fe位掺杂Al的双钙钛矿型氧化物Sr2Fe1-xAlxMoO6 (x=00，005，010，015，03)多晶材料. x射线衍射和扫描电子显微分析显示，在Fe位掺杂Al既没有引入杂相，也没有明显改变Sr2FeMoO6多晶材料的晶粒尺寸和晶界状态. 非磁性Al离子的掺杂使晶粒内部磁有序区细化成更小的区域，同时使反铁磁区内的磁耦合作用变弱. 这一方面提高了亚铁磁区磁化方向的磁场灵敏度；另一方面也降低了反铁磁区对自旋相关电子的散射；两方面的共同作用使Sr2FeMoO6的低场磁电阻效应明显增强，但这种尺寸效应也使材料的磁电阻在高温下下降得更快. 关键词： 低场磁电阻 掺杂 自旋极化电子     

ZnCoO稀磁半导体的室温磁性

采用固相反应法，将ZnO和Co₂O₃粉末按不同的成分配比混合，制备了稀磁半导体Zn_1-xCo_xO (x=0.02,0.06,0.10)材料.并使用H₂气氛退火技术对样品进行了处理，得到了具有室温铁磁性的掺Co氧化锌稀磁半导体.利用全自动X射线衍射仪、X射线光电子能谱仪、高分辨透射电子显微镜和超导量子干涉器件磁强计对样品的结构、晶粒的尺寸、微观形貌以及磁性等进行了测量和标度. 关键词： 稀磁半导体 氧化锌 掺杂 固相反应法     

Effect of the order in which powdered ZnS is doped with copper chloride and indium on formation of luminescence centers

We consider the effect of the order in which In and CuCl impurities are added during thermal doping on the luminescence characteristics of ZnS, and also their role in formation of emission centers in zinc sulfide. We show that the order in which the impurities (acting as activators or coactivators) are added to the ZnS plays the determining role in formation of the spectral characteristics of the luminophore obtained. We have established that adding indium first during thermal doping of zinc sulfide with In and CuCl prevents diffusion of Cu into the interior of the ZnS. Adding indium after CuCl or adding indium simultaneously with CuCl prevents formation of the Cu2S and CuS phases or promotes degradation of the indicated phases in ZnS. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 5, pp. 601–605, September–October, 2006.