Effect of aspect ratio of vertically aligned copper nanowires in the presence of cellulose nanofibers on the thermal conductivity of epoxy composites

The composites comprising vertically aligned network of copper nanowires (CuNWs) in the presence of cellulose nanofibers were fabricated by using the freeze‐templating method and the effect of aspect ratio (A/R) of CuNWs on the thermal conductivity of epoxy composites was investigated. The thermal conductivity of epoxy composites increased to 0.79 W m^?1 K^?1 at 1.12 vol% of high A/R CuNWs loading, corresponding to the thermal conductivity enhancement of 365% as compared to the pure epoxy. The thermal conductivity of vertically aligned higher A/R CuNWs/epoxy, which is 38.5% and 51.9% higher than those of the lower A/R CuNWs and the randomly aligned CuNWs, respectively. The application of the epoxy composites in heat dissipation was demonstrated by the temperature changes of composites on a hot plate with the increase of heating time. These results indicate that the thermally conductive composites in this study could be applied for thermal dissipating materials in electronic devices.     

Achieving Superior Electrocatalytic Performance by Surface Copper Vacancy Defects during Electrochemical Etching Process

Vacancy defects of catalysts have been extensively studied and proven to be beneficial to various electrocatalytic reactions. Herein, an ultra‐stable three‐dimensional PtCu nanowire network (NNW) with ultrafine size, self‐supporting rigid structure, and Cu vacancy defects has been developed. The vacancy defect‐rich PtCu NNW exhibits an outstanding performance for the oxygen reduction reaction (ORR), with a mass activity 14.1 times higher than for the commercial Pt/C catalyst (20 %.wt, JM), which is currently the best performance. The mass activity of the PtCu NNW for methanol oxidation reaction (MOR) is 17.8 times higher than for the commercial Pt/C catalyst. Density‐functional theory (DFT) calculations indicate that the introduction of Cu vacancies enhances the adsorption capacity of Pt atoms to the HO* intermediate and simultaneously weakens the adsorption for the O* intermediate. This work presents a facile strategy to assemble efficient electrocatalysts with abundant vacancy defects, at the same time, provides an insight into the ORR mechanism in acidic solution.     

Ag@Au Core‐Shell Nanowires for Nearly 100 % CO2‐to‐CO Electroreduction

Electrochemical reduction of carbon dioxide (CO₂) to CO is regarded as an efficient method to utilize the greenhouse gas CO₂, because the CO product can be further converted into high value‐added chemicals via the Fisher–Tropsch process. Among all electrocatalysts used for CO₂‐to‐CO reduction, Au‐based catalysts have been demonstrated to possess high selectivity, but their precious price limits their future large‐scale applications. Thus, simultaneously achieving high selectivity and reasonable price is of great importance for the development of Au‐based catalysts. Here, we report Ag@Au core–shell nanowires as electrocatalyst for CO₂ reduction, in which a nanometer‐thick Au film is uniformly deposited on the core Ag nanowire. Importantly, the Ag@Au catalyst with a relative low Au content can drive CO generation with nearly 100 % Faraday efficiency in 0.1 m KCl electrolyte at an overpotential of ca. ?1.0 V. This high selectivity of CO₂ reduction could be attributed to a suitable adsorption strength for the key intermediate on Au film together with the synergistic effects between the Au shell and Ag core and the strong interaction between CO₂ and Cl^? ions in the electrolyte, which may further pave the way for the development of high‐efficiency electrocatalysts for CO₂ reduction.     

C-V analysis of rapidly thermal annealed SF6 plasma treated AlGaN/GaN heterostructures

We studied influence of rapid thermal annealing on electrical parameters of SF₆ plasma treated AlGaN/GaN heterostructures. The main emphasis by the evaluation was laid on C-V measurement and simulation, but also I-V and SIMS measurement were used. It was found that the diminished sheet carrier concentration of a two-dimensional electron gas after plasma treatment recovered significantly at the temperature of 500 °C. By using C-V measurement, it was possible to assess besides the changes of the two-dimensional electron gas concentration after annealing also the changes in the Schottky barrier heights and to find out the doping concentration in AlGaN barrier and GaN channel layer. The trend in Schottky barrier height changes after annealing was confirmed also by I-V measurement.     

Wire metamaterial based on semiconductor matrices

In this Letter, we have presented a new approach for the fabrication of nanowire media (wire metamaterials) by electrochemical methods. A^IIIB^V porous matrices (a host medium) were prepared by anodic electrochemical etching of industrial substrates. The host medium has been filled via electrochemical deposition with a metal and by means of annealing process. We have shown that this technique can be used to fabricate a nanowire medium with unique parameters (such as aspect ratio, high electric permittivity and strong χ⁽³⁾ nonlinearity near the fundamental absorption edge of the host media). (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Magnetic properties of one-dimensional embedded nickel nanostructures in gold nanowires

Magnetic nanostructures of nickel embedded in gold were successfully fabricated by electrochemical deposition in porous alumina templates. Structural characterization of the samples confirmed the formation of pure phase, crystalline multi-segmented Au-Ni-Au nanowires. Magnetic characterization of the wires reveals that ferromagnetism arises as a result of Ni embedded in Au segments. An interesting behavior of coercivity was observed that showed a rapid decrease of coercivity for smaller Ni segments while a monotonic decrease was found for the larger segments. Finally, the saturation magnetization of the wires exhibited a slower increase for smaller Ni segments while a sharp increase was observed for larger Ni segments.     

Current--voltage characteristics of an individual helical CdS nanowire rope

This paper studies the electronic transport in an individual helically twisted CdS nanowire rope, on which platinum microleads are attached by focused-ion beam deposition. The current-voltage （I - V） characteristics are nonlinear from 300 down to 60 K. Some step-like structures in the I - V curves and oscillation peaks in the differential conductance （dI/dV - V） curves have been observed even at room temperature. It proposes that the observed behaviour can be attributed to Coulomb-blockade transport in the one-dimensional CdS nanowires with diameters of 6-10 nm.     

A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress

This paper studies systematically the drain current collapse in AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors （MOS-HEMTs） by applying pulsed stress to the device. Low-temperature layer of Al2O3 ultrathin film used as both gate dielectric and surface passivation layer was deposited by atomic layer deposition （ALD）. For HEMT, gate turn-on pulses induced large current collapse. However, for MOS-HEMT, no significant current collapse was found in the gate turn-on pulsing mode with different pulse widths, indicating the good passivation effect of ALD Al2O3. A small increase in Id in the drain pulsing mode is due to the relieving of self-heating effect. The comparison of synchronously dynamic pulsed Id - Vds characteristics of HEMT and MOS-HEMT further demonstrated the good passivation effect of ALD Al2O3.     

Structural and optoelectronic properties of amorphous GaN thin films

Amorphous gallium nitride (a-GaN) thin films were deposited on glass substrate by electron beam evaporation technique at room temperature and high vacuum using N ₂ as carrier gas. The structural properties of the films was studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). It was clear from XRD spectra and SEM study that the GaN thin films were amorphous. The absorbance, transmittance and reflectance spectra of these films were measured in the wavelength range of 300–2200 nm. The absorption coefficient spectral analysis in the sharp absorption region revealed a direct band gap of E _g = 3:1 eV. The data analysis allowed the determination of the dispersive optical parameters by calculating the refractive index. The oscillator energy E ₀ and the dispersion energy E _d, which is a measure of the average strength of inter-band optical transition or the oscillator strength, were determined. Electrical conductivity of a-GaN was measured in a different range of temperatures. Then, activation energy of a-GaN thin films was calculated which equalled E _a = 0:434 eV.