硅一体化薄膜微电极器件及其应用

提出用发展中的硅微机械加工技术设计制作硅一体化薄膜微电极器件．这类微电化学器件具有微电极所特有的全部优点，而且由于结构上的一体化，便于器件整体的微型化和集成化．试用薄膜微电极器件电流法常温直接检测ＣＯ２气体，取得了满意的结果。设想通过器件三维构型设计的改进和完善，器件工作的长期稳定性可望进一步提高．     

Photocatalytic Synthesis of Oxygenates from Gaseous CO2 and CH4 over Semiconductor

Photoinduced synthesis of CO2 and CH4 was investigated using a batch reaction system on several photoactive materials supported on silicon dioxide. Single semiconductor showed higher selectivity to C1 compounds. The production of C2-C3 oxygenates took place preferentially on composite semiconductor photocatalysts. In particular, it was found that acetone was the primary product over Cu/CdS-TiO2/SiO2.     

Defect Structures in 4H-SiC Irradiated with Highly-energetic ^20Ne^4＋ and ^120Xe^26＋ Ions

The study of damage evolution in silicon carbide bombarded with energetic helium ions is important for the use of this material in future fusion reactors. Heavier inert gas atoms like Ne and Xe have similar behavior of diffusion and clustering with helium, and the comparison of damage accumulation behavior between energetic helium and heavier inert gas ions can reveal important aspects of underlying mechanisms. As an extension of our     

Nanocavity Shrinkage and Preferential Amorphization during Irradiation in Silicon

We model the recent experimental results and demonstrate that the internal shrinkage of nanocavities in silicon is intrinsically associated with preferential amorphization as induced by self-ion irradiation. The results reveal novel thermodynamic nonequilibrium properties of such an open-volume nanostructure in condensed matter and also of covalently bound amorphous materials both at nanosize scale and during ultrafast interaction with energetic beam.     

百太瓦级超短超强钛宝石激光装置研制

近年来，随着相关领域的发展,尤其是啁啾脉冲放大（Chirped Pulse Amplification．CPA）技术的出现，使得超短脉冲激光的峰值功率的进一步提高，输出功率已能达到百TW或PW以上，聚焦功率密度可达到10^2W／cm^2.CPA技术的基本思路是将非常窄的种子光脉冲在时域上展宽，然后在放大器中充分的提取能量，最后将激光脉冲压缩到接近初始的脉冲宽度．从而获得极高的峰值功率，如图1所示如此超高强度的激光脉冲，可以创造极端的物态条件，用于研究相对论领域的光与物质相互作用，如超快x光激光产生、超高次谐波产生、激光尾波场粒子加速、实验室天体物理学及快点火机制等。随着超短超强脉冲激光装置性能的提高和研究工作的进一步深入，超短超强脉冲激光将会在军事、科技和民用方面呈现广阔的应用前景。     

氚化钛中氦的热解析

氚以金属氚化物贮存形式过程中，会衰变生成氦-3，从而影响金属氚化物的使用性能。文中采用热解析方法研究了不同贮存周期氦在金属氚化物中的能量状态的变化情况。     

硅色敏器件对复色光色差辨识能力的数值分析

对复色光的光谱功率分布和色敏器件光谱响应的实验曲线进行了函数拟合，采用Mathematica 4．2计算了具有不同峰值波长和半高宽的高斯分布的复色光在色敏器件中产生的电流比．计算结果表明，待测复色光的峰值波长和半高宽变化对两种典型的色敏器件的输出信号影响的权重比分别为100：1和10：1。权重比说明色敏器件的输出电流比随峰值波长和半高宽的变化非常灵敏，但两者权重不同，其中峰值波长的变化影响更为显著，是影响复色光颜色变化的主要因素．数值分析的结果表明，硅双结色敏器件对复色光色差有良好的辨识能力．两种器件权重比的差异说明了器件制作工艺与其辨识能力的关系，为器件合理设计提供了理论依据．     

Fe-ZSM-5杂原子分子筛的合成与表征

采用静态水热法分别以正丁胺、四丙基溴化铵为模板剂合成ZSM-5分子筛及Fe-ZSM-5杂原子分子筛；利用XRD与FT-IR对其结构进行表征；考察了Mo改性后分子筛催化剂上甲烷脱氢芳构化的反应性能。结果表明，Fe部分进入了分子筛的骨架，导致分子筛的结晶度及表面酸强度的下降，使Mo／Fe-ZSM-5催化剂的反应性能较Mo／HZSM-5显著下降。     

Modified Photoluminescence by Silicon-Based One-Dimensional Photonic Crystal Microcavities

photoluminescence (PL) lrom one-dimensional photonic band structures is investigated. The doped photonic crystal with microcavitles are fabricated by using alternating hydrogenated amorphous silicon nitride (a-SiNx:H/a-SiNy:H) layers in a plasma enhanced chemical vapour deposition (PECVD) chamber. It is observed that microcavities strongly modify the PL spectra from active hydrogenated amorphous silicon nitride (a-SiNx:H) thin film. By comparison, the wide emission band width 208nm is strongly narrowed to 11 nm, and the resonant enhancement of the peak PL intensity is about two orders of magnitude with respect to the emission of the λ/2-thick layer of a-SiNx:H. A linewidth of Δλ=11 nm and a quality factor of Q=69 are achieved in our one-dimensional a-SiNz photonic crystal microcavities. Measurements of transmittance spectra of the as-grown samples show that the transmittance resonant peak of a cavity mode at 710nm is introduced into the band gap of one-dimensional photonic crystal distributed Bragg reflector (DBR), which further verifies the microcavity effects.