纳米硅薄膜光吸收谱的研究

用恒定光电导法测量了纳米硅(其晶粒尺寸为3-5nm,晶态成分比X_c为45％—50％)薄膜在0.9—2.5eV范围的光吸收谱。分析了在不同光子能量范围可能存在的对光电导作主要贡献的几种光跃迁过程,以及随着X_c的增加,材料由非晶、微晶转变为纳米硅薄膜时光吸收谱的变化。发现纳米硅晶粒之间的界面区(平均厚度约为1nm)中载流子的跃迁及传输过程对整个范围的光吸收谱起主导作用。联系纳米硅的这种特殊结构解释了有关实验结果。 关键词：     

EXAFS研究负载型Ni／SiO2的区域结构

实验结果表明改进的实验室ＥＸＡＦＳ谱仪测试Ｎｉ箔的Ｋ吸收得到的ＥＸＡＦＳ谱与同步辐射上测量Ｎｉ箔得到的ＥＸＡＦＳ谱相近，利用实验室ＥＸＡＦＳ方法也可开展较好的结果测量研究，在ＳｉＯ２粉末载体上Ｎｉ负载量变化的ＥＸＡＦＳ结果表明，随着Ｎｉ负载量的降低，Ｎｉ的径向结构函数主配位峰的位置Ｒ＝０．２２０ｎｍ保持不变，但振幅强度逐渐降低。负载量从Ｎｉ箔到２．５％Ｎｉ／ＳｉＯ２，无序度因子σ由０．００６８ｎｍ     

溶胶—凝胶法制备SiO2基片Er^3＋：Al2O3光学薄膜

用溶胶—凝胶法在SiO2基片上提拉制备了掺Er^3 ：Al2O3光学薄膜。采用扫描电子显微镜、原子力显微镜、差热—热重分析仪、X射线衍射仪研究了掺Er^3 ：Al2O3光学薄膜的肜貌和结构特性。在900℃烧结后，SiO2基片上提拉15次形成厚度8μm掺摩尔比0．01Er^3 的面心立方结构γ-Al2O3薄膜具有明显(110)择优取向，掺摩尔比0．01Er^3 对γ—Al2O3的品体结构和结晶生长过程木产生显著影响。薄膜具有均匀多孔结构，平均粒径为30～100nm，平均孔径为50～100nm，表面起伏度为10～20nm。掺摩尔比0．01Er^3 ：rAl2O3薄膜，获得了中心波长为1．534μm(半峰全宽为36nm)的光敛发光谱。     

Structural Phase Transformations of ZnS Nanocrystalline Under High Pressure

In-situ energy dispersive x-ray diffraction on ZnS nanocrystalline was carried out under high pressure by using a diamond anvil cell. Phase transition of wurtzite of 10nm ZnS to rocksalt occurred at 16.0GPa, which was higher than that of the bulk materials. The structures of ZnS nanocrystalline at different pressures were built by using materials studio and the bulk modulus, and the pressure derivative of ZnS nanocrystalline were derived by fitting the equation of Birch-Murnaghan. The resulting modulus was higher than that of the corresponding bulk material, which indicates that the nanomaterial has higher hardness than its bulk materials.     

Preparation and Optical Properties of SnO2／SiO2 Nanocomposite

SnO2/SiO2 nanocomposites have been prepared by the soaking-thermal-decomposing method, tin oxide nanoparticles are uniformly dispersed in the mesopores of silica. The optical absorption edge of the obtained nanocomposite presents a redshift compared with bulk tin oxide, With the increasing annealing temperature during the procedure of the sample preparation, the optical absorption edge of the sample moves to shorter wavelength (blueshift). These optical properties can be ascribed to the amorphous structure and band defects of surface layers of the tin oxide nanoparticles.     

纳米WO3的制备及其光解水析氧性能研究

用溶胶凝胶法,灼烧法合成了纳米级WO3,采用X-射线衍射、紫外可见漫反射光谱对WO3进行表征.在Fe3 为电子受体、溶液酸度pH为2.0情况下,研究了纳米级WO3在365nm紫外辐射下光解水析氧的光催化活性,并讨论了不同方法制备的催化剂活性差异的原因.结果表明,结晶程度越高、尺寸越小、比表面积越大的纳米级WO3具有更高的光分解水析氧活性,电子受体的浓度、溶液的酸度对析氧活性有明显的影响.     

Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation

Patterned silicon nanocrystallite (SINC) films were fabricated on (100) orientation p-type boron-doped sificon wafer by the hydrogen ion implantation technique and the anodic etching method. The efficient field emission with low turn-on field of about 3.5V/μm at current density of 0.1μA/cm^2 was obtained. The emission current density from the SiNC films reached 1mA/cm^2 under a bias field of about 9.1V/μm. The experimental results demonstrate that there are great potential applications of the SiNC films for fiat panel displays. A surface treatment with hydrogen plasma was performed on the SiNC films and a significant improvement of emission properties was achieved.     

Co@SiO2核壳式纳米磁性粒子的合成、性质表征及在细胞分离和细胞芯片上的应用

合成了Co@SiO2核壳式纳米粒子,并采用透射电镜(TEM)、X射线衍射(XRD)、扫描电镜(SEM)和振动样品磁强计(VSM)对其形状、尺寸、荧光及磁特性进行了表征,探讨了其在细胞分离和细胞芯片上的应用和原理.     

Synthesis of GaN Nanorods by Ammoniating Ga2O3/ZnO Films

Large quantities of CaN nanorods are successfully synthesized on Si（111） substrates by ammoniating the films of Ga2O3/ZnO at 950℃ in a quartz tube. The structure, morphology and optical properties of the as-prepared CaN nanorods are studied by x-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, Fourier transform infrared spectroscopy, and photoluminescence. The results show that the CaN nanorods have a hexagonal wurtzite structure with lengths of several micrometres and diameters from 80 nm to 300hm, which could supply an attractive potential to harmonically incorporate future GaN optoelectronic devices into Si-based large-scale integrated circuits. The growth mechanism is also briefly discussed.