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| Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation | |
| 作者姓名： | 郁可 王伟明 朱自强 张永胜 虞献文 陈少强 李琼 杨广达 朱建中 陈群 陆卫 资剑 |
| 作者单位： | [1]DepartmentofElectricEngineering,EastChinaNormalUniversity,Shanghai200062 [2]DepartmentofChemistry,EastChinaNormalUniversity,Shanghai200062 [3]AnalyticalCenter,EastChinaNormalUniversity,Shanghai200062 [4]StateKeyLaboratoryforInfraredPhysics,InstituteofTechnicalPhysics,ChineseAcademyofSciences,Shanghai200083 [5]NationalKeyLaboratoryforAppliedSurfacePhysics,FudanUniversity,Shanghai200433 |
| 摘 要： | Patterned silicon nanocrystallite (SINC) films were fabricated on (100) orientation p-type boron-doped sificon wafer by the hydrogen ion implantation technique and the anodic etching method. The efficient field emission with low turn-on field of about 3.5V/μm at current density of 0.1μA/cm^2 was obtained. The emission current density from the SiNC films reached 1mA/cm^2 under a bias field of about 9.1V/μm. The experimental results demonstrate that there are great potential applications of the SiNC films for fiat panel displays. A surface treatment with hydrogen plasma was performed on the SiNC films and a significant improvement of emission properties was achieved. |
| 关 键 词： | 硅纳米晶体 硼掺杂 氢离子注入技术 半导体材料 阳极蚀刻法 |
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