Photocatalytic Synthesis of Oxygenates from Gaseous CO2 and CH4 over Semiconductor

Photoinduced synthesis of CO2 and CH4 was investigated using a batch reaction system on several photoactive materials supported on silicon dioxide. Single semiconductor showed higher selectivity to C1 compounds. The production of C2-C3 oxygenates took place preferentially on composite semiconductor photocatalysts. In particular, it was found that acetone was the primary product over Cu/CdS-TiO2/SiO2.     

Defect Structures in 4H-SiC Irradiated with Highly-energetic ^20Ne^4＋ and ^120Xe^26＋ Ions

The study of damage evolution in silicon carbide bombarded with energetic helium ions is important for the use of this material in future fusion reactors. Heavier inert gas atoms like Ne and Xe have similar behavior of diffusion and clustering with helium, and the comparison of damage accumulation behavior between energetic helium and heavier inert gas ions can reveal important aspects of underlying mechanisms. As an extension of our     

Nanocavity Shrinkage and Preferential Amorphization during Irradiation in Silicon

We model the recent experimental results and demonstrate that the internal shrinkage of nanocavities in silicon is intrinsically associated with preferential amorphization as induced by self-ion irradiation. The results reveal novel thermodynamic nonequilibrium properties of such an open-volume nanostructure in condensed matter and also of covalently bound amorphous materials both at nanosize scale and during ultrafast interaction with energetic beam.     

硅色敏器件对复色光色差辨识能力的数值分析

对复色光的光谱功率分布和色敏器件光谱响应的实验曲线进行了函数拟合，采用Mathematica 4．2计算了具有不同峰值波长和半高宽的高斯分布的复色光在色敏器件中产生的电流比．计算结果表明，待测复色光的峰值波长和半高宽变化对两种典型的色敏器件的输出信号影响的权重比分别为100：1和10：1。权重比说明色敏器件的输出电流比随峰值波长和半高宽的变化非常灵敏，但两者权重不同，其中峰值波长的变化影响更为显著，是影响复色光颜色变化的主要因素．数值分析的结果表明，硅双结色敏器件对复色光色差有良好的辨识能力．两种器件权重比的差异说明了器件制作工艺与其辨识能力的关系，为器件合理设计提供了理论依据．     

Fe-ZSM-5杂原子分子筛的合成与表征

采用静态水热法分别以正丁胺、四丙基溴化铵为模板剂合成ZSM-5分子筛及Fe-ZSM-5杂原子分子筛；利用XRD与FT-IR对其结构进行表征；考察了Mo改性后分子筛催化剂上甲烷脱氢芳构化的反应性能。结果表明，Fe部分进入了分子筛的骨架，导致分子筛的结晶度及表面酸强度的下降，使Mo／Fe-ZSM-5催化剂的反应性能较Mo／HZSM-5显著下降。     

Modified Photoluminescence by Silicon-Based One-Dimensional Photonic Crystal Microcavities

photoluminescence (PL) lrom one-dimensional photonic band structures is investigated. The doped photonic crystal with microcavitles are fabricated by using alternating hydrogenated amorphous silicon nitride (a-SiNx:H/a-SiNy:H) layers in a plasma enhanced chemical vapour deposition (PECVD) chamber. It is observed that microcavities strongly modify the PL spectra from active hydrogenated amorphous silicon nitride (a-SiNx:H) thin film. By comparison, the wide emission band width 208nm is strongly narrowed to 11 nm, and the resonant enhancement of the peak PL intensity is about two orders of magnitude with respect to the emission of the λ/2-thick layer of a-SiNx:H. A linewidth of Δλ=11 nm and a quality factor of Q=69 are achieved in our one-dimensional a-SiNz photonic crystal microcavities. Measurements of transmittance spectra of the as-grown samples show that the transmittance resonant peak of a cavity mode at 710nm is introduced into the band gap of one-dimensional photonic crystal distributed Bragg reflector (DBR), which further verifies the microcavity effects.     

Ti—Si沸石表面吸附物种的TPSR—TPD研究

氯丙烯在不同催化剂表面上吸附的ＴＰＤ结果表明在ＴＳ－１上有三重附峰，而在ＴｉＯ２／Ｓｉｌｉｃａｌｉｔｅ上仅有单峰，Ｈ２Ｏ２或分子Ｏ２在催化剂表面吸附后，在脱附物种中可用质谱检测到原子Ｏ（１６）物种；说明Ｈ２Ｏ２或分子Ｏ２在样品表面存在解离吸附；并发现解离子分子Ｏ２的活性很低，ＴＳ－１能同时吸附内烯和Ｈ２Ｏ２，而在ＳｉＯ２／Ｓｉｌｉｃａｌｉｔｅ表面的吸附却与吸附顺序有关，环氧化活性顺序如下：ＴＳ－１     

A Two-Dimensional Photonic Crystal Slab Mirror with Silicon on Insulator for Wavelength 1.3μm

A concrete two-dimensional photonic crystal slab with triangular lattice used as a mirror for the light at wavelength 1.3μm with a silicon-on-insulator （SOI） substrate is designed by the three-dimensional plane wave expansion method. For TE-like modes, the bandgap in the Г-K direction is from 1087nm to 1559nm. The central wavelength in the bandgap is about 1.3μm, hence the incident light at wavelength 1.3μm will be strongly reflected. Experimentally, such a photonic crystal slab is fabricated on an SOI substrate by the combination of EBL and ICP etching. The measurement of its transmission characteristics shows the bandgap edge in a longer wavelength is about 1540 nm. The little discrepancy between the experimental data and the theoretical values is mainly due to the size discrepancy of the fabricated air holes.