脉冲加热-红外法测定超细二硅化钼粉末中氧

本文建立了用TC-600氧氮分析仪测定超细二硅化钼粉末中氧的分析方法.针对二硅化钼超细粉末和高温难熔的特点,对加热功率、助熔剂和进样量等测试条件进行优化,选择最佳测定条件.本方法简便、快速,测定结果准确.氧的回收率为 98.9%～102.0%,相对标准偏差为1.68%.     

HL—1M装置几种杂质谱线的特性

介绍了ＨＬ－１Ｍ装置真空紫外光谱区的杂质辐射观测结果。对器壁硅化后的杂质特性进行了分析，用激光吹气技术研究了杂质输运，分析了低混杂波电流驱动、弹丸注入实验中杂质谱线的变化。     

32×64元硅化铂肖特基势垒红外焦平面列阵的物理设计

本文介绍了国内首见报导的32×64元硅化铂肖特基势垒红外焦平面的物理设计方法。作者从计算探测目标的辐射能量出发,综合考虑了器件的结构、材料和工艺参数,电参数,光学系统参数和响应率的非均匀性,以信嗓比作为焦平面的品质因数进行了性能优化计算。根据系统参数和现有工艺条件,预计焦平面对室温景物成象的温度分辨率优于1°K,这同器件的热象测试结果符合得相当好。     

化学光谱法测定U3Si2中17种杂质元素

本文介绍化学光谱法测定Ｕ３Ｓｉ２中１７种杂质元素，用ＴＢＰ作固定相，采用柱上萃取色层法分离铀与杂质元素，铯为外加素体，铟为内标。平均回收率在８８％－１１５％之间，相对标准偏差优于１３％。     

The fabrication of nickel silicide ohmic contacts to n-type 6H-silicon carbide

This paper reports that the nickel silicide ohmic contacts to n-type 6H-SiC have been fabricated. Transfer length method test patterns with NiSi/SiC and NiSi硅化镍;欧姆触点;n型碳化硅;制造;能带;带隙Project supported by the National Basic Research Program of China (Grant No~2002CB311904), the National Defense Basic Research Program of China (Grant No~51327010101) and the National Natural Science Foundation of China (Grant No~60376001).2006-09-192006-10-30This paper reports that the nickel silicide ohmic contacts to n-type 6H-SiC have been fabricated. Transfer length method test patterns with NiSi/SiC and NiSi2/SiC structure axe formed on N-wells created by N^＋ ion implantation into Si-faced p-type 6H-SiC epilayer respectively. NiSi and NiSi2 films are prepared by annealing the Ni and Si films separately deposited. A two-step annealing technology is performed for decreasing of oxidation problems occurred during high temperature processes. The specific contact resistance Pc of NiSi contact to n-type 6H-SiC as low as 1.78× 10^-6Ωcm^2 is achieved after a two-step annealing at 350 ℃for 20 min and 950℃ for 3 min in N2. And 3.84×10-6Ωcm^2 for NiSi2 contact is achieved. The result for sheet resistance Rsh of the N＋ implanted layers is about 1210Ω/□. X-ray diffraction analysis shows the formation of nickel silicide phases at the metal/n-SiC interface after thermal annealing. The surfaces of the nickel silicide after thermal annealing are analysed by scanning electron microscope.     

某些Al2Cu型和CrSi2型化合物的能带结构研究

Al2Cu型和CrSi2型固相过渡金属原子簇化合物M2B(M=Mo, W),M2Ni(M=Zr, Hf)和MGe2(M=Nb, Ta)在低温下出现超导行为。本文采用扩展的Huckel近似下的紧束缚能带方法, 计算了它们的能带结构, 给出了其能带、态密度与晶体轨道重叠布居, 讨论了晶体中化学键强度与超导转变温度的关系。