混合判断矩阵排序方法研究

本文介绍了混合判断矩阵及完全一致性混合判断矩阵的概念，提出了混合判断矩阵排序的一种最小偏差法，并给出了其收敛性迭代算法，最后通过算例说明了方法的可行性。     

多相体系中Ni-PMMA纳米复合材料的γ辐射制备

在多相体系中 ,运用γ射线辐射法 ,在常温常压下成功地一步合成了镍 聚甲基丙烯酸甲酯 (Ni PMMA)纳米复合材料 .XRD、TEM分析和IR光谱表明 ,在此实验条件下 ,镍离子和甲基丙烯酸甲酯已成功地被还原或聚合 ,镍粒子为面心立方 ,尺寸为 7.33nm .研究显示 ,用醋酸钠代替氢氧化钠或氨水作为碱性试剂 ,可以有效地控制体系的pH ,同时不影响单体的聚合 .     

AAS测定纸巾中的铅和镉

本文采用原子吸收光谱法测定纸巾中铅、镉的含量。结果表明，不同纸巾中的污染元素铅、镉的含量不同。同时还对一种纸巾的铅、镉元素进行了回收实验，回收率在92％-104％之间。     

一种高信噪比的双光束激光光声光谱仪原理及应用

作为一种新兴的检测手段 ,激光光声光谱技术与其他检测技术相比具有很多优点。本文设计的光声光谱仪用激光做光源 ,有两个光声池 ,分别用来放置参考样品和待测样品 ,输出结果为二者光声信号的比值。利用这一比值 ,可以由参考样品的性能参数方便地求出待测样品的相关性能参数。该光声光谱仪有效地减小了本底吸收噪声的影响 ,提高了信噪比 ,扩大了固体光声理论的应用范围。本文还阐述了该光声光谱仪在定性定量分析中的一些应用     

用于波分复用系统的多峰干涉滤光片

介绍了用于波分复用系统的多峰干涉滤光片的设计原理,提出了滤光片透射峰位置的确定方法,讨论了影响滤光片半宽度和截止度的因素,给出了滤光片的膜厚容差分析结果,表明透射率监控标准偏差在<0.5%范围内,可以得到波形良好的多峰滤光片,最后给出了实验结果.     

稀土甘氨酸咪唑配合物[RE(Gly)4(Im)(H2O)](ClO4)3的热化学研究

采用溶解-反应量热法在具有恒温环境的溶解-反应热量计内,测定了[Gd(Gly)4(Im)(H2O)](ClO4)3和[Y(Gly)4(Im)(H2O)](ClO4)3两种稀土甘氨酸咪唑配合物的标准生成焓分别为(-3 461.46 ±0.22) kJ·mol-1 和(-3 926.6±0.90) kJ·mol-1.     

《毛细管电色谱理论基础》

毛细管电色谱作为一种新型微分离分析技术,其分离过程具有多种机理协同作用的特征。对于毛细管电色谱的理论研究不仅要考虑系统的电属性,还要兼顾溶质的两相分配特征。该书系统地阐述了毛细管电色谱的基本理论,讨论了分离过程中影响峰展宽的因素及其规律。基于作者发展的弛豫理     

A Facile Synthesis of Silver-Coated Composite Particles by Swelling Surface Method

We report a facile and rapid method for fabrication of composite particles consisting of a polystyrene (PS) core and a uniform silver shell. The process involves the PS colloid surface swelling, the anchoring of silver ions and nanoparticles onto the surfaces, and the subsequent growth of metal seeds in a short period. The present approach has the advantages of simplicity and high efficiency. The TEM images show the morphology of the obtained PS core-silver shell particles, and their chemical composition and crystallinity are analysed by x-ray diffraction. To our knowledge, this is the first study based on swelling PS surface for synthesis of silver-coated PS particles and may be implemented for preparing other metal-coated PS particles.     

Structural and Electrical Characteristics of Pb（Zr0.53,Ti0.47）O3 Thin Films Deposited on Si （100） Substrates

Pb(Zr0.53, Ti0.47)O3 (PZT) films were directly deposited on Si substrates without a buffer layer by pulsed laser deposition. Only(110)-oriented PZT peaks (other than Si substrate peaks) were observed from the XRD data. The electrical properties of the PZT/Si capacitor were characterized in terms of both the capacitance versus voltage (C-V) and current versus voltage (I-V) measurements. The clockwise trace of the C-V curve shows ferroelectric polarization switching, as is expected. From the I-V curves, the Schottky emission and spacecharge-limited-current behaviour are found to be the mainly leakage current mechanism in a certain electric field range in the negative and positive bias, respectively.