关于拟连续domain以及函数空间的注记

用伴随的方式给出了拟连续domain以及其Scott闭集格(又叫广义完全分配格)的等价刻画。此外,本文证明了拟连续格关于函数空间是不封闭的,从而不能构成cartesian闭范畴。     

居民消费的习惯形成与实际经济周期模型的求解分析——一个基于三部门RBC模型的研究

结合H-P滤波法和King,Plosser&.Robelo(1987)的研究,探讨了一个求解引入居民消费的习惯形成和存在稳态趋势增长的RBC模型的对数线性化方法,并利用该方法求解引入习惯形成和政府支出冲击的三部门RBC模型来分析中国1979-2009年间宏观经济波动.研究表明:这个方法求解本文模型的预测结果与中国的特征事实较一致;与NHG方法求解的预测结果相比较,二者存在明显的差异;对中国经济的解释力要强于NHG方法求解的预测结果.     

Attracting and invariant sets of impulsive delay Cohen-Grossberg neural networks

In this paper, a class of impulsive delay Cohen-Grossberg neural networks (IDCGNNs) is investigated. By applying a nonlinear delay differential inequality with removing some restrictions on the amplification functions, some new and useful sufficient conditions ensuring the existence of global attracting and invariant sets for IDCGNNs are obtained. An example is given to illustrate the effectiveness of our results.     

飞秒脉冲在熔石英玻璃中超连续谱产生的研究

从非线性薛定谔方程出发,利用分步傅里叶方法,研究了时空耦合飞秒脉冲在熔石英玻璃中传输时,传输距离、入射激光脉冲峰值功率、衍射、色散和非线性等因素对超连续谱产生的影响。结果表明,飞秒脉冲在熔石英玻璃中传输时,超连续谱的产生主要分为两阶段：由材料的自聚焦等三阶非线性效应引起的脉冲压缩阶段及由自相位调制和材料群速度色散引起脉冲分裂阶段。当高峰值功率的飞秒脉冲在熔石英玻璃中传输时,材料的三阶非线性效应抑制衍射效应,引起脉冲压缩,从而产生子脉冲,由此引入新的频率成分。同时,还研究了同一脉冲不同横向空间位置处的超连续谱的变化规律,在中心频率两侧均有新频率产生。最后,通过实验证实了超连续谱的产生。     

红外非线性光学晶体CdSe生长与性能表征

采用垂直无籽晶气相法(VUVG)生长出尺寸达26 mm×45 mm的CdSe单晶体,对CdSe晶体的稳态气相生长速率进行了深入讨论.采用气相升华法提纯后的CdSe多晶原料的X射线粉末衍射谱与PDF卡片值(65-3436)吻合,生长出的单晶体{100}和(110)面XRD衍射峰尖锐,无杂峰,且{100}面出现3级衍射峰.晶锭密度为5.74 g/cm3,与理论计算值接近.退火处理后的晶片在1000～7000 cm-1 红外波段范围内透过率达到70;.采用VUVG法生长的CdSe单晶体,结晶性能好、结构致密、尺寸大和红外透过率高,可用于制备红外非线性光学器件.     

CdSe晶体倍频光学参数及元件加工研究

对红外非线性光学晶体CdSe的倍频光学参数及其元件加工进行了研究.根据非线性光学原理和折射率色散关系,从理论上计算出CdSe晶体的有效非线性系数和倍频元件相位匹配角与基频光波长(5.5～10.0 μm)的调谐特性曲线,从实验上探索到一种通过解理试验和XRD定向测试,快速确定其光轴方向的晶体定向新方法.结果表明,CdSe晶体在Ⅱ类相位匹配条件下的有效非线性系数d_(eff)为d_(15)sinθ,倍频转换效率与方位角无关;在Ⅰ类相位匹配条件下其有效非线性系数d_(eff)恒等于0,无倍频输出.根据理论计算结果,运用定向新方法,针对VUVG法生长出的外观无方向特征的CdSe晶体,经定向切割、研磨和抛光,初步加工出基频波长为9.6 μm的CdSe晶体Ⅱ类相位匹配倍频元件, 尺寸达9.5 mm×9.5 mm×18 mm.     

近空间升华法制备CdS多晶薄膜的研究

系统地研究了近空间升华法(CSS)制备CdS薄膜沉积速率的影响因素。发现CdS薄膜的沉积速率随升华源温度的升高而增大,但随衬底温度和沉积气压的上升而下降。对所制备样品的结构、表面形貌和光谱透过率特性进行了测试,结果表明：(1)不同氧分压下沉积的CdS薄膜沿(103)晶向择优生长。CdCl₂氛围下退火后,(103)晶向的优势得到进一步加强;(2)不同氧分压制备的CdS薄膜致密且粒径均匀,晶粒的大小随着衬底温度的升高而增大,但薄膜的粗糙度也随之增大;(3)随着CdS薄膜厚度的减小,可见光中短波段的透过率有所增大,有利于提高太阳电池的短波光谱响应。并将CSS制备的CdS多晶薄膜用于CdTe太阳电池的制作,获得了10.29%的光电转换效率,初步验证了该制作工艺的可行性。     

单壁碳纳米管中稳态机械波的激发条件研究

通过分子动力学模拟,对单壁碳纳米管中稳态机械波的激发条件进行了详细的研究.利用所施加的周期性机械外力,使单壁碳纳米管产生局部径向形变,该形变将以单壁碳纳米管的管壁为弹性媒质传播开去,从而在单壁碳纳米管中形成机械波;机械波产生的条件依赖于单壁碳纳米管波动系统能量的维持和受迫振动区域形变方向的控制;稳定机械波形成的最佳条件是碳纳米管的形变度和受迫振动频率之间的最优匹配,以及由此形成的单壁碳纳米管在周期性外力作用下产生的共振.     

Nano-porous Composites Based on Heteropolyacid Functionalized Ionic Liquid: Synthesis,Characterization, and Catalytic Performance in Esterification

Functionalized ionic liquid samples (bmim-PW₁₂) were synthesized by 1-butyl-3-methyl-imidazolium bromide (bmimBr) and 12-phosphotungstic heteropolyacid (PW₁₂). The sam-ples were annealed at 100-450 oC and were characterized by Fourier transform infrared spec-troscopy, X-ray diffraction, scanning electron microscope, thermal gravity-DTG, brunauer emmett teller, and NH₃-temperature programmed desorption. The results showed that the bmim-PW₁₂ samples were crystal and maintained intact Keggin structure. The organic parts of those samples were partly decomposed at a temperature more than 350 oC. The sample annealed at 400 oC exhibited nano-porous structure, strong acidity, and excellent catalytic activity on the esterification of n-butanol with acetic acid. The higher ester yield was ob-tained when the mass ratio of catalyst over the reactants amount was 5% for bmim-PW₁₂ catalyst annealed at 400 oC.     

Deep level transient spectroscopy investigation of deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact

Deep levels in Cds/CdTe thin film solar cells have a potent influence on the electrical property of these devices. As an essential layer in the solar cell device structure, back contact is believed to induce some deep defects in the CdTe thin film. With the help of deep level transient spectroscopy (DLTS), we study the deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact. One hole trap and one electron trap are observed. The hole trap H1, localized at E_v+0.128~eV, originates from the vacancy of Cd (V_Cd. The electron trap E1, found at E_c-0.178~eV, is considered to be correlated with the interstitial Cu_i⁼ in CdTe.