三电极气体开关自陡化技术及应用

 根据Trigatron的触发要求设计了脉冲变压器型驱动源、三电极气体开关。在多种驱动模式下对三电极开关的自陡化参数进行统计分析,选择最优的自陡化工作模式。通过研究自陡化工作模式,优化了三电极开关工作极性、工作电场、紫外辐照强度和辐照时间。试验结果表明：增加陡化环节后,Trigatron的击穿概率有了明显提高,击穿时刻延迟和抖动明显降低,扩大了Trigatron稳定工作的欠压比范围。     

ICF中子发射时间诊断

 对ICF中子发射时间的诊断技术进行了研究,研制了基于快闪烁体和微通道板式光电倍增管的中子发射时间探测器。在某大型激光原型装置上进行了中子发射时间的实验测量,成功获得多发实验的中子发射时间与打靶激光脉冲的时间及中子发射时间之间的关系。实验结果表明：中子发射时间探测器对DT中子和DD中子都能够响应,中子产额测量下限达到10⁷,时间测量不确定度小于20 ps;CH烧蚀层越厚,中子发射时间越长。     

医用生物材料的低温保存研究

生物材料的低温保存一般都要经历降温过程、低温储存过程及复温过程,其中降温过程中对生物细胞的影响最大.每一种生物细胞都有自己合适的降温速率,如能满足其这种降温速率,细胞所受到的低温损伤最小,则生物细胞的复活率最高.文中介绍程序控制变速降温装置的主要结构及几种典型生物体的降温过程.最后,对器官的低温保存进行分析讨论.     

宽光谱膜厚监控系统中光谱实时测量技术研究

 在宽光谱膜厚监控系统中,利用光栅光谱仪分光,线阵CCD接收,完成光谱的一次性快速扫描来控制膜层厚度,达到实时监控的要求。而系统光谱扫描的准确性,直接影响膜厚实时监控的有效性。为了得到准确的光谱信息,首先确定CCD像素和光波波长的对应关系,基于特征谱线的离散关系,采用最小二乘拟合法建立了光谱标定函数,经实验,标定波长均方根误差为0.037 nm;对于CCD实时输出的光谱监控信号,利用小波阈值优化算法抑制信号中的随机噪声,保留了光谱信号的细节成分,峰值误差的最大值为1.0%,峰位误差的最大值为0.3%,满足了监控中光谱分辨率的要求。     

Synthesis of water-dispersible photoluminescent silicon nanoparticles and their use in biological fluorescent imaging

Water-dispersible silicon nanoparticles (Si-NPs) are desirable for applications in biological techniques. A simplified method to synthesize such particles is reported here. The resulting Si-NPs are water-dispersible and luminescent. Under the excitation of UV light, the Si-NPs emit strong red light with a peak maximum at 606 nm and a quantum yield of 6%. They are highly stable, and remain so over several weeks. Fourier Transform Infrared (FTIR) spectroscopy shows a visible Si–CH₂ scissoring vibration mode. Furthermore, the surface chemical bondings were confirmed by X-ray photoelectron spectroscopy (XPS). In the Si2p and C1s core levels, Si–C components are observed. The diameters of the synthesized Si-NPS as measured by atomic force microscope (AFM) are approximately 5 nm. Furthermore, the nanoparticles can be taken up by cultured cells. Fluorescence images of Si-NPs within MCF-7 human breast cancer cells show they are distributed throughout the cell tissue.     

Some duct flows of a fractional Maxwell fluid

The aim of this paper is to establish the analytical solutions corresponding to two types of unsteady flows of fractional Maxwell fluid in a duct of rectangular cross-section. The fractional calculus approach is used in solving the problems. With the help of the methods of separation of variables and Laplace transforms, the expressions for the velocity field and the volume flux are presented under series forms in terms of the generalized G functions. Similar solutions for Newtonian and ordinary Maxwell fluids, performing the same motions, are also obtained as the limiting cases of our solutions. Furthermore, the influence of pertinent parameters on the flows is delineated and appropriate conclusions are drawn.     

A wire microcalorimetric study of catalytic ignition of methane–air mixtures over palladium oxide

Catalytic ignition and heat release of methane oxidation over a Pd wire covered with a 1–2 μm PdO surface layer were investigated by wire microcalorimetry over the temperature range of 600–770 K and pressure range of 0.5–4 atm. Ignition temperatures and heat release rates for different methane concentrations (1–4 vol.% in dry air) were determined, showing that the ignition temperatures decrease with increasing the methane concentration and increasing ambient pressure. At total pressure of 1 atm and 2% methane concentration, the global activation energy for the catalytic reaction is 21.5 ± 0.9 kcal/mol and 14.3 ± 0.2 kcal/mol in the temperature ranges of 600–670 K and 670–770 K, respectively. The reaction order for methane is 0.9 ± 0.1 over the temperature range of 630–770 K.     

Experiment on 60-GHz MMW transmission performance in an optical fiber and wireless system

We experimentally investigate the transmission performance of 60-GHz signals over standard single-mode fiber (SSMF) and wireless links at different bit rates. Experimental results show that in a transmission of over 10-km SSMF and 1.3-m wireless link, bit rate reaches up to 5 Gb/s and bit error rate (BER) is less than 10 4 . The main limiting factor in such radio-over-fiber (ROF) systems is intersymbol interferences caused by the so-called walk-off effect when BER is below 10 8 . In addition, a transmission of over 20-km SSMF without chromatic dispersion compensation is briefly investigated. For a BER of 10 8 , the optical penalty is 2 dB.     

Nonpolar a-plane light-emitting diode with an in-situ SiNx interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition

We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiN_x interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiN_x interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm²/(V·s) and 460 Ω/口 respectively. Owing to the significant effect of the SiN_x interlayer, a-plane LEDs are realized. Electroluminescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA.     

Ultra-low on-resistance high voltage (>600 V) SOI MOSFET with a reduced cell pitch

A low specific on-resistance (R S,on) silicon-on-insulator (SOI) trench MOSFET (metal-oxide-semiconductor-field-effect-transistor) with a reduced cell pitch is proposed.The lateral MOSFET features multiple trenches:two oxide trenches in the drift region and a trench gate extended to the buried oxide (BOX) (SOI MT MOSFET).Firstly,the oxide trenches increase the average electric field strength along the x direction due to lower permittivity of oxide compared with that of Si;secondly,the oxide trenches cause multiple-directional depletion,which improves the electric field distribution and enhances the reduced surface field (RESURF) effect in the SOI layer.Both of them result in a high breakdown voltage (BV).Thirdly,the oxide trenches cause the drift region to be folded in the vertical direction,leading to a shortened cell pitch and a reduced R S,on.Fourthly,the trench gate extended to the BOX further reduces R S,on,owing to the electron accumulation layer.The BV of the MT MOSFET increases from 309 V for a conventional SOI lateral double diffused metal-oxide semiconductor (LDMOS) to 632 V at the same half cell pitch of 21.5 μm,and R S,on decreases from 419 m · cm 2 to 36.6 m · cm 2.The proposed structure can also help to dramatically reduce the cell pitch at the same breakdown voltage.