Realization of MMI Power Splitter by UV-light Imprinting Technique Using Hybrid Sol-Gel SiO2 Materials

An efficient fabrication scheme of buried ridge waveguide devices is demonstrated by UV-light imprinting technique using organic-inorganic hybrid sol-gel Zr-doped SiO2 materials. The refractive indices of a guiding layer and a cladding layer for the buried ridge waveguide structure are 1.537 and 1.492 measured at 1550nm, respectively. The tested results show more circular mode profiles due to existence of the cladding layer. A buried ridge single-mode waveguide operating at 1550 nm has a low propagation loss （0.088 dB/cm） and the 1× 2 MMI power splitter exhibits uniform outputs, with a very iow splitting loss of 0.029 dB at 1549nm.     

Degradation of Ultra-Thin Gate Oxide NMOSFETs under CVDT and SHE Stresses

Degradation of device under substrate hot-electron (SHE) and constant voltage direct-tunnelling (CVDT)stresses are studied using NMOSFET with 1.4- nm gate oxides. The degradation of device parameters and the degradation of the stress induced leakage current (SILC) under these two stresses are reported. The emphasis of this paper is on SILC and breakdown of ultra-thin-gate-oxide under these two stresses. SILC increases with stress time and several soft breakdown events occur during direct-tunnelling (DT) stress. During SHE stress, SILC firstly decreases with stress time and suddenly jumps to a high level, and no soft breakdown event is observed. For DT injection, the positive hole trapped in the oxide and hole direct-tunnelling play important roles in the breakdown. For SHE injection, it is because injected hot electrons accelerate the formation of defects and these defects formed by hot electrons induce breakdown.     

Investigation of ferroelectric phase transition for modified barium titanate in multilayer ceramic capacitors by in situ Raman scattering and dielectric measurement

The ferroelectric phase behaviors of modified BaTiO₃ in X7R multilayer ceramic capacitors (MLCCs) were investigated by dielectric measurements and in situ Raman scattering. The in situ thermo-Raman scattering shows that because of a residual stress existing in the MLCCs, the tetragonal to cubic phase transition for modified BaTiO₃ in MLCCs takes place over a wide temperature range of 373 K to 473 K, suggesting a diffuse-like characteristic which can be well explained by a modified phenomenological thermodynamic model, while the dielectric measurement indicates that the tetragonal to cubic transition occurs at 393 K. A disagreement exists between the two experimental results. Furthermore, a dc field-induced paraelectric to ferroelectric transition was identified by the two measurement techniques, but their phase-transition mechanisms are different. The dielectric measurement reveals the polar-micro-region to macro-domain transformation in the shell part of the core–shell structure while the in situ Raman scattering shows the cubic to tetragonal transition under a dc bias field. PACS 74.20.De; 77.22.Ch; 77.84.Dy; 77.80.Bh; 78.30.-j     

场诱导下自旋冰系统[111]方向磁相变过程的蒙特卡洛模拟

自旋冰系统因为具有与固体水(冰Ih)中氢原子构型相同的自旋排列局域规则而具有宏观量子简并的基态,即使十分接近零温也不会达到长程磁有序态.外场的诱导将破坏基态的简并而使系统达到长程磁有序.我们在最近邻铁磁相互作用的简化模型下用蒙特卡洛方法模拟了自旋冰系统在[111]方向外场下的磁相变行为.分别给出了不同温度和不同相互作用强度下的磁化曲线,分析了系统的磁化过程中自旋的取向得有序程度以及相变,探讨了相互作用强度对系统磁相变行为的影响.     

锐钛矿(TiO2)半导体的氧空位浓度对导电性能影响的第一性原理计算

基于低温重氧空位锐钛矿半导体的态密度计算,在同等条件下研究取不同大小模型的锐钛矿做适量浓度的氧空位存在,分别对进入导带的相对平均电子数和氧空位类杂质的散射迁移率进行计算,之后对电导率进行类比,发现锐钛矿半导体的导电性能对适量浓度低的氧空位有利可行得到了证明.同时,低温重氧空位的条件下,锐钛矿半导体的电导率不仅与氧空位浓度有关,而且和进入导带的平均电子数有关,和氧空位散射的电子迁移率有关的正确结论. 关键词： 锐钛矿半导体 氧空位浓度 电导率 第一性原理计算     

混沌振子系统周期解几何特征量分析与微弱周期信号的定量检测

提出了一种对微弱周期信号的定量检测方法.分析混沌振子系统在大尺度周期状态下的相对稳定输出时,发现了混沌振子系统输出周期解的平均面积是一个比较稳定的几何特征量.该几何特征量与待测信号幅值之间存在比较稳定的单调递增关系.在一定的参数条件下,几何特征量精度可达到10^-6V².利用混沌系统对随机噪声信号的免疫性和对微弱周期信号的敏感性,进一步建立了微弱周期信号的定量检测方法.仿真实验表明,随着待检测幅度的增加,在保证检测精度的同时,抗噪性能也随之增强. 关键词： 混沌振子系统 大尺度周期相态 周期解的几何特征量 微弱周期信号的定量检测     

四针状纳米氧化锌电磁波吸收特性

将四针状纳米ZnO作为吸收剂、环氧树脂为粘结剂制备成吸波涂层,分析了吸波涂层中的四针状纳米氧化锌含量及涂层厚度对吸波性能的影响,当涂层厚度为15mm时,吸收主要集中在15—18GHz波段;当涂层厚度增加到35mm后,样品的吸波性能提高明显,特别在6—11GHz之间的吸波性能提高显著,样品反射率小于-5dB的频率宽度达到136GHz(44—18GHz),其吸波性能相比较微米级ZnO有显著提高. 最后对四针状纳米氧化锌的吸波机理进行了讨论. 所研究的涂层在电磁波屏蔽方面具有较大的应用价值. 关键词： 四针状纳米ZnO 吸波性能 反射率 吸波机理     

高氧空位简并锐钛矿TiO2半导体电子寿命的第一性原理研究

为了研究锐钛矿TiO₂晶体中高氧空位浓度对电子寿命的影响,利用基于局域密度泛函理论框架下的广义梯度近似平面波超软赝势方法, 用第一性原理对含高氧空位浓度的锐钛矿TiO₂晶体进行了结构优化处理、能带分布和态密度分布计算, 表明在温度一定和高氧空位浓度的条件下, 锐钛矿TiO₂的电子寿命随氧空位浓度的增大而减小;电子浓度的大小对电子寿命无影响.同时,锐钛矿TiO₂晶体中高氧空位浓度时,发现有莫特相变的现象. 关键词： 高氧空位 2半导体')" href="#">锐钛矿TiO₂半导体 电子寿命 第一性原理     

高温退火对蓝宝石基片的表面形貌和对CeO缓冲层以及Tl-2212超导薄膜长的影响

研究了蓝宝石(1102)基片在不同温度和时间下退火时表面形貌和表面相结构的变化,以及它对CeO2缓冲层和T1-2212超导薄膜生长的影响.原子力显微镜(AFM)研究表明,在流动氧环境中1000℃温度下退火,蓝宝石(1102)的表面首先局部区域形成台阶结构,然后表面形成叠层台阶结构,随着退火时间的延长.表面发生了台阶合并现象,表面形貌最终演化为稳定的具有光滑平台的宽台阶结构.XRD测试表明,通过高温热处理可以大幅度提高蓝宝石基片表面结构的完整性.在1000℃温度下热处理20 h的蓝宝石(1102)基片上可以生长出具有面内取向的CeO2(001)缓冲层.在具有缓冲层的蓝宝石基片上可以制作出高质量c轴织构的外延11-2212超导薄膜,其临界转变温度(Tc)为104.7 K,液氮温度下临界电流密度(Jc)达到3.5 MA/cm2,微波表面电阻R(77 K,10 GHz)约为390μΩ.