动能定理在活动物体和固定物体的应用

学生对在运动的参考系中应用动能解题时,总感觉没有把握,不知如何下手,因而常常解错. 如何让学生解决活动坐标系上出现的问题呢? 首先应使学生明白,物体的速度是相对参考系而言的,参考系选取不同,物体的相对速度不同,具有的动能也不同.     

Improvement of real time diffraction efficiency of NGD holograms by introducing electron donors

Nongelatin dichromated holographic film(NGD) is a new holographic recordingmaterial.Holograms recorded on this material have better environmental stability, higherdiffraction efficiency and stronger real time effect, etc..An experimental study to ascertainthe influence of two electron donors, namely,N,N-dimethylformamide(DMF) and dimethyl-sulfoxide(DMSO),on the real time diffraction efficiency(RTDE) of NGD holograms is car-ried out.The pressence of electron donors not only improves the sensitivity,but also enhancesthe real time effect greatly.RTDE of above 60% at±1 orders of NGD plane transimissiongrating is achieved by introducing electron donors.     

Rn上的非初等变换群及其极限集

该文对高维非初等Mò'bius变换群进行了研究,得到了一些重要性质,给出了几个关于离散准则和代数收敛性的定理.     

First-principles study of indium on silicon (1 0 0)—the structure, defects and interdiffusion

The atomic structures of indium (In) on silicon (Si) (1 0 0)-(2 × 1) surface are investigated by the local density approximation using first-principles pseudopotentials. Total energy optimizations show that the energetically favored structure is the parallel ad-dimer model. The adsorption energy of In on ideal Si(1 0 0)-(1 × 1) surface is significantly higher than that on reconstructed Si(1 0 0)-(2 × 1) surface, suggesting that In adsorption does not break the Si-Si dimer bond of the substrate. When Si surface contains single dimer vacancy defects, In chain will be interrupted, leading to disconnected In nanowires. Displacive adsorption of In on Si(1 0 0) is also considered, and the calculation suggests that interdiffusion of In into Si substrate will not be favorable under equilibrium conditions.     

高能核碰撞中带电多重数快度与能量和中心度的关系

用强子–弦级联模型JPCIAE及相应的Monte Carlo事例产生器研究相对论性核–核碰撞中带电粒子多重数的赝快度密度对能量和中心度的依赖关系.无需另调任何模型参数的条件下,此模型可以同时较好地描述相对论性pp实验数据及PHOBOS和PHENIX实验组的Au+Au实验数据.本文指出:因〈N_part〉并非严格定义的物理量,致使实验上和理论上确定〈N_part〉有一定任意性,从而使得每参加者核子对的带电粒子赝快度密度随着〈N_part〉的增加可能逐渐增大,也可能逐渐减小,因此用它来区分粒子产生机制是欠妥的.     

闭排队网络中性能势与无穷小实现因子之间的关系

In this paper,the concept of the infinitesimal realization factor is extended to the parameter-dependent performance functions in closed queueing networks. Then the concepts of realization matrix (its elements are called realization factors) and performance potential are introduced,and the relations between infinitesimal realization factors and these two quantities are discussed. This provides a united framework for both IPA and non IPA approaches. Finally,another physical meaning of the service rate is given.     

高压处理对BiSrCaCu2Oy超导电性的影响

 本文在高T_c超导体BiSrCaCu₂O_y常压制备的基础上，研究了热压烧结和冷压处理对其形成、结构及超导电性的影响，并与常压结果进行了比较。结果表明，高压可以使样品的合成时间缩短，合成温度降低。但同时它也抑制了晶格参数较大的相（高T_c相）的形成，使小晶格参数的杂相含量增多。对于提高样品的超导电性而言，1.5 GPa时一个较好的压力点。     

掺铬钛酸锶晶体的氧化还原诱导吸收及发光的退火效应和浓度效应

制备了纯的、掺0.005、0.01、0.2和0.5wt%Cr2O3的钛酸锶单晶.测量了不同退火条件下的室温透射光谱及6.5K以上的荧光光谱.对晶体的氧化和还原热处理诱导吸收及退火和掺杂浓度对晶体发光的影响进行了较为详细的研究.     

光辅助超高真空CVD系统制备SiGe异质结双极晶体管研究

介绍了采用紫外光化学汽相淀积(UVCVD)、超高真空化学汽相淀积(UHVCVD)和超低压化学汽相淀积(ULPCVD)技术研制的化学汽相淀积(CVD)工艺系统,简称U³CVD系统.应用该系统,在450℃低温和10^-7Pa超高真空环境下研制出了硅锗(SiGe)材料和硅锗异质结双极晶体管(SiGe HBT)材料.实验表明,该系统制备的SiGe HBT材料性能良好.