A—15型化合物的超导性经验规律

本文给出一张既能考虑A-15结构型变,又能描述A-15型化合物T_c(超导临界温度)变化规律的图。从而预言:所述A-15系列中大概不会存在T_c很高(>25K)的化合物;铌系列中Nb₃Ge的T_c可能是最高的;钒系列中T_c可望还能提高(>17.1K),V₃Ge可望提高到12K以上。检查Nb₃Si,得不到Geller那样的乐观估计,并认为:以新工艺得到的A-15相Nb₃Si,是以牺牲正当化学配比或改变正常原子体积为代价而获得的非理想结构。从T_c与半径比关系及理想A-15结构对半径比的要求来看,笔者认为文献上关于Nb₃Si在有较高T_c(>23K)的种种预言,都是缺乏充分依据而不足置信的。 关键词：     

141Nd激发态的在束γ谱学研究

通过¹³⁰Te(¹⁶O,5nγ)¹⁴¹Nd反应布居了¹⁴¹Nd的高自旋态能级.对反应产生的在束γ射线进行了γ射线单谱和γ–γ符合测量.建立了激发能达7614.5keV的¹⁴¹Nd能级纲图,新发现了12条γ射线和15个能级.基于实验测量的γ跃迁各向异性,建议了¹⁴¹Nd部分能级的自旋值.用一个h_11/2价中子空穴与¹⁴²Nd核芯晕态的耦合可以定性地解释¹⁴¹Nd的能级结构.     

垂直入射条件下厚金属环结构的负磁导率与左手材料行为

用矩形波导法实验研究了微波垂直入射于具有一定厚度的金属铜圆环结构的微波电磁响应行为.结果表明，当金属铜环的厚度增加到一定值时，在中心频率为145GHz处出现透射禁带，并且相位在透射禁带处发生跃变.采用双各向异性媒质理论计算了铜圆环结构的磁导率随频率变化关系，在透射禁带处磁导率为负.对厚金属圆环与金属线一一对应组合的样品，微波沿环面垂直入射时测量到左手透射通带和相位超前，通带带宽达到15GHz，强度为-21dB.     

Off-axis dose distribution for rectangle proton beam

This papcr modifies an analytical algorithm originally developed for electron dose calculations to evaluate the off-axis dose distribution of rectangle proton bcam. This spatial distribution could be described by Fermi-Eyges theory since a proton undergoes small-angle scattering when it passes through medium. Predictions of the algorithm for relative off-axis dose distribution by a 6 cm ＊ 6 cm initial monoenergetic proton beam are compared with the results from the published Monte Carlo simulations. The excellent level of agreement between the results of these two methods of dose calculation （〈 2%） demonstrates that the off-axis dose distribution from rectangle proton beam may be computed with high accuracy using this algorithm. The results also prompts the necessity to consider the off-axis distribution when the proton is applied to clinical radiotherapy since the penumbra is significant at the distal of its range （about 0.6 cm at the Bragg-peak depth）.     

全反射式高分辨率傅里叶成像光谱仪的研究

提出了一种基于分波前干涉结构的全反射式高分辨率傅里叶变换成像光谱仪。其中前置望远系统及干涉成像系统都采用了反射式光学元件,反射表面镀金属反射膜,使系统可应用与很宽的光谱范围内。分析和讨论了光谱仪的工作原理及光学结构,设计了两种可行的光路结构图,并通过初步实验验证了系统的基本性能。     

Tetragonal Distortion of GaN Epilayer with Multiple Buffer Layers on Si （111） Studied by RBS/Channelling and HRXRD

Rutherford backscattering （RBS）/channelling and high resolution x-ray diffraction （HRXRD） have been used to characterize the tetragonal distortion of a GaN epilayer with four Alx Ga1-xN and single AIN buffer layers grown on a Si （111） substrate by metal-organic vapour phase epitaxy （MOVPE）. The results show that a 1000nm GaN epilayer with a perfect crystal quality （Xmin = 1.54%） can be grown on the Si （111） substrate in virtue of multiple buffer layers. Using the RBS/channelling angular scan around an off-normal （1213） axis in the （1010） plane and the conventional HRXRD θ - 20 scans normal to GaN （0002） and （1122） planes at the 0° and 180° azimuth angles, the tetragonal distortion eT, which is caused by the elastic strain in the epilayer and different buffer layers, can be obtained respectively. The two experiments are testified at one result, the tetragonal distortion of GaN epilayer is nearly to a fully relaxed （eT = 0）.     

Transition Temperature of Two-Degenerate-Flavour QCD in the Chiral Limit

We present the results for the transition temperature of quantum chromodynamics （QCD） with two degenerate flavours （Nf = 2） of Wilson quarks. On lattice 8^3 × 4 with 4 representing the temporal extent, by using the Ferrenberg-Swendsen reweighting method, we determine the critical β = 6/g^2 where the transition occurs, g is the coupling constant. On lattice 8^2 × 20 × 4, by using the axial vector Ward-Takahashi identity, we calculate the current quark mass amq, a is the lattice spacing. Assuming the O（4） scaling, the critical β in the chiral limit is determined. We calculate the p meson mass amp at zero temperature on lattice 8^3 × 20. By using the experimental p meson mass to set the scale, we obtain 194（1） MeV for the transition temperature in the chiral limit.     

热力学方法在处理XRF数据中的应用

应用热力学方法处理X-射线荧光光谱分析(XRF)数据是1983年文献[1]首次提出。XRF中相对强度R被视为表观活度(即有效浓度),R/X比(相对强度/重量分数)视为表观活度系数γ。应用了lgγ_(B,A)/X_A~(?)=β形式的亚正规溶液方程式来描述和计算A-B二元体系表观活度系数随成份X_A变化的关系。多元体系中XRF的R/X比可根据以下关系式由二元体系已知表观活度系数计算: γ_(A,B,C)……=γ_(A,B)·γ_(A,C)……γ_(B,A,C)……=γ_(B,A)·γ_(B,C)……我们采用文献[2],[3]二元体系数据计算三元系参数,计算结果表明上述关系在允许误差范围内基本能满足要求。由三元系试样的相对强度R和二元系数据计算三元体系未知组分的成分可以用迭代的方法借助微型计算机来实现。为了进一步验证热力学方法处理XRF数据的可行性,我们研制了Cu-Ni-Fe-Zn粉末压片的二元,三元,四元系,含量范围较宽的样品,并测定了各组分的相对强度R。计算结果表明亚正规溶液模型对二元体系获得的结果最好。为了满足分析化学对准确度的要求,我们进一步提出了以下的修正数模(TM-3): 根据上述关系式,用实验数据计算的结果与人工配料组成相比的符合程是令人满意的,且与C-Q方程计算的结果一致。(见表1和表2)     

TI-59微型可编程序计算器在化学分析允许差制定方法中的应用

化学分析方法中的允许差是检验分析工作质量的一个重要标准。至今已有许多国家用数理统计的方法处理化学分析方法的允许差,并将这一工作标准化。我国各部门也在从事这一工作,冶金工业部首先于1979年提出用数理统计方法计算冶金产品化学分析允许差制定方法部标准审定稿。1981年正式定为部标准(YB949-79)为了促进该法的推广实施,促进我国分析工作质量的提高,我们利用 TI-59型计算器的特点编写     

Observation of banded spherulites and lamellar structures by atomic force microscopy

Spherulites are common structures of semi-crystalline polymers. It has been known that semi-crystalline polymers can form spherulites when crystallized from solution or from melt. A dark Maltese cross of a spherulite could be easily observed under the polarized optical microscopy (POM). Moreover, some spherulites show an additional alternating dark and bright concentric ring structure that is attributed to the regular twisting of the radial crystallite ribbons as they grow from the spherulit…