超导Nb-Ge溅射膜的俄歇电子能谱及电子能谱化学分析

利用表面分析仪器俄歇电子能谱(AES)仪和电子能谱化学分析(ESCA)仪对超导Nb-Ge溅射膜进行表面和深度剖面分析,以探讨在溅射沉积成膜过程中A15结构Nb₃Ge能够稳定生长的机制,以及影响其转变温度T_c的因素。分析结果表明,超导Nb-Ge膜中含有O,C和Al等杂质,其中O的含量对T_c有重要影响。表面上未发现有聚集的Ge。Nb/Ge密度比由表面层的3.1向内部逐渐降至2.26。X射线光电子能谱(XPS)的分析表明:Nb,Ge,C和O的谱峰沿深度均有不同程度的化学位移和峰形变化,这明这些元素的化学态在膜内是复杂的。但其中Nb的变化最小,可能对高T_cA15Nb₃Ge相的生长起稳定作用。 关键词：     

C-15结构(Hf,Zr,Ta)V2和(Hf,Zr,Nb)V2合金超导转变的压力效应研究

本文研究了C-15结构化合物(Zr_0.5Hf_0.5-xTa_x)V₂(x≤0.2)和(Hf_0.5Zr_0.5-xNb_x)V₂(x≤0.2)的超导转变温度T_c及其压力效应?T_c/?P。报道了实验方法与结果。与(Hf_1-xTa_x)V₂和(Zr_1-xTa_x)V₂的情况不同,在(Zr_0.5Hf_0.5-xTa_x)V₂中Ta的引入使常压下的T_c下降,然而(?)T_c/(?)P却大为提高。因此高压下Zr_0.5Hf_0.45Ta_0.05V₂的T_c反而比Hf_0.5Zr_0.5V₂更高。导出了一个基于角动量分波表象能带论方法的描述压力效应的新关系式。它指出导带电子波函数中的高角动量成分变化对T_c的压力效应影响比较重要。这个公式有助于理解上述复杂的实验现象,并能合理地解释某些元素(如Cs,Ba,La等)的T_c随压力剧增的事实。 关键词：     

硫酸锂钾的室温相和低温相的锂离子位置

核磁共振实验表明,LiKSO₄在T_c=195K发生结构相变。本文报道了温度低于T_c时,Li位电场梯度张量的温度依赖关系。结合理想离子晶体模型,讨论了该晶体的结构,指出室温相Li的位置并不像Bradley所推测的,在(2/3,1/3,0.849)的位置,而应在(2/3,1/3,0.706)的位置;195K的相变是由于Li离子的位移造成;低温相的空间群可能为R3。 关键词：     

碳含量对Y-Ni-B-C超导相的形成与临界温度的影响

报道ThCr₂Si₂型结构的四元金属间化合物Y₂Ni₂B₂C_x的形成与超导电性.当碳配比含量x=0.9—1.2时,电弧熔炼的合金结晶为较好的YNi₂B₂C单相.当x＜0.8或x＞1.2时,合金中虽仍以YNi₂B₂C为主相,但杂相明显增加.超导转变温度T_c随碳含量增加明显分为两个台阶.x≤0.8时,T_c约为12.5K;x≥0.9时,T_c约为15K. 关键词：     

MgB2 超薄膜的制备和性质研究

利用混合物理化学气相沉积法在6H-SiC(001)衬底上制备干净的MgB₂超导超薄膜.在本底气体压强、载气氢气流量等条件一定的情况下,改变B₂H₆流量及沉积时间,制备得到不同厚度的系列MgB₂超薄膜样品,并研究了超导转变温度T_c、剩余电阻率ρ_(42K)、上临界磁场H_c2等与膜厚的关系.该系列超薄膜沿c轴外延生长,随膜厚度的变小,T_c(0)降低,ρ_(42K)升高.膜在衬底上的生长遵循Volmer-Weber岛状生长模式.对于厚度为7.5 nm的MgB₂超薄膜,T_c(0) =32.8 K,ρ_(42K) =118 μΩcm,是迄今为止所观测到的厚度为7.5 nm的MgB₂超薄膜最高的T_c值;对于厚度为10 nm的MgB₂膜,T_c(0)=35.5 K,ρ_(42K)=17.7 μΩcm,上临界磁场μ₀H_c2估算为12 T左右,零磁场、4 K时的临界电流密度J_c=1.0×10⁷ A/cm²,是迄今为止10 nm厚MgB₂超薄膜的最高J_c值,且其表面连接性良好,均方根粗糙度为0.731 nm.这预示MgB₂超薄膜在超导纳米器件上具有广阔的应用前景. 关键词： 2超薄膜')" href="#">MgB₂超薄膜 薄膜生长 氢气流量 混合物理化学气相沉积     

高压下Y-Si-H体系晶体结构和超导性质的第一性原理研究

采用第一性原理计算方法,研究了三元氢化物Y-Si-H体系在高压下的晶体结构、电子性质及超导性质,发现了热力学稳定的YSiH₇、YSiH₉、YSi₂H₁₂和YSiH₁₈,以及热力学亚稳的YSi₂H₁₃、YSi₂H₁₄和Y₂SiH₁₇。电子性质计算表明,YSiH7为绝缘体,YSi₂H₁₃为半导体,其余氢化物均具有金属特性。通过麦克米兰方程估算超导转变温度(T_c)发现,YSi₂H₁₂具有最高的T_c,在100 GPa下为43.5 K。YSi₂H₁₄的动力学稳定压力可降至40 GPa,T_c为23.8 K,是Y-Si二元化合物中最高T_c的2倍,...     

二维全同Nb4团簇在Cu(100)表面的结构稳定性和电子性质

使用基于密度泛函理论的第一性原理赝势法和超原胞模型，研究了吸附在Cu(100)表面上的二维有序排列的幻数团簇Nb₄的结构稳定性及其电子结构性质.计算表明，四面体结构和平面的菱形结构的Nb₄团簇都可以稳定地吸附在Cu(100)表面上，这个体系很可能有重要的应用前景.在Cu(100)表面上，菱形结构的Nb₄比四面体结构的Nb₄更稳定，从Nb₄团簇的四面体结构到菱形结构，需经过的势垒高度约为0.94eV/团蔟.电子结构的计算表明，在Nb₄吸附后，Cu(100)表面与Nb₄团簇间有明显的电荷重新分布，表面Cu原子的电子态密度也明显改变. 关键词： 4团簇')" href="#">Nb₄团簇 有序排列 结构稳定性 从头计算     

非晶态超导体转变温度Tc的经验公式

本文提出一个非晶态非过渡金属超导体的T_c经验公式,T_c=Aλ<ω>^1/2/(<ω>/ω₀+(1+λ)/20),式中A=(1/5)^(K1/2)。计算值和实验值,以及和Garland理论值的比较表明,T_c经验公式能很好地描述非晶态超导体的T_c值。 关键词：     

掺Ca-(RPr)-123系列超导体的高压合成

利用高温高压方法成功地合成出(R_0.4Pr_0.6)_0.5Ca_0.5Ba₂Cu₃O_7-δ(其中R=La,Pr,Nd,Sm,Eu,Gd,Y)单相123相超导体.其结果表明,在Pr系的R-123相化合物中掺Ca都能够获得高T_c的超导体,其超导转变温度都在100K左右. 关键词： 超导体 Pr-123相化合物 高压合成 稀土     

Bl结构MoNx薄膜的制备及物理性能研究

我们对以反应性溅射法制备的MoN_x薄膜测量了超导转变温度T_c,电阻率ρ(T)(从T_c起始到300K)。用X射线衍射技术、卢瑟福背散射(RBS)、俄歇谱仪和X射线光电子能谱(XPS)技术对这些样品进行了分析。实验结果表明T_c和ρ(T)随N含量改变而变化。当样品是B1结构时,T_c小于4.2K,而且样品内还有过量的N存在。俄歇分析表明,样品内有O,C杂质存在。这些因素都可能导致T_c很低,ρ(T)呈负的温度系数。 关键词：     

The CESR and spin wave studies of A-15 films in normal and superconducting states

The electron spin resonance studies have been reported for A-15 superconductors, namely Nb₃Ge, Nb₃Si and V₃Si possessing different T_c values and CESR, Platzmann-Wolff type spin waves, and spin waves of antiferromagnetic type are observed in all the samples. It is found that T_c of Nb₃Ge depends upon the presence and separation of spin wave absorptions from the CESR, and T_c is found to increase when the separation is reduced. It is concluded that the exchange interactions in the conduction band, as manifested by the behaviour of spin waves, are of antiferromagnetic type and they are responsible for superconductivity in A-15 materials studied.     

Anomalous behavior of superconducting transition temperature of amorphous and crystalline Nb3Ge under pressure

The superconducting transition temperature (T_c) of amorphous Nb₃Ge was studied under both hydrostatic and quasihydrostatic pressure to 3.5 and 13 GPa, respectively. Whereas hydrostatic pressure causes T_c to initially decrease, T_c is found to increase under higher quasihydrostatic pressures. T_c(p) was also studied on an A-15 crystalline Nb₃Ge sample obtained from the amorphous sample by annealing.     

Specific heat of A-15 Nb3Si produced by explosive compression

The specific heat from 1.2 to 23 K has been measured on a new high T_c superconductor, A-15 Nb₃Si. The sample was prepared by explosive compression and has an onset of bulk superconductivity at 18.0 K, with a transition width of 0.7 K. The density of states for pure A-15 Nb₃Si implied from the specific heat data is 0.94 ± 0.20 states/eV-atom, ΔC/γ T_c is 2.0 ± 0.2.     

The superconducting transition temperature of bulk samples of the niobium-germanium A15-phase after implantation of Ge,Si, O and Ar ions

Bulk material of Nb₃ (Ge_0.8Nb_0.2) with A15 structure and a superconducting transition temperature T_c of 6.5 K has been implanted with Ge, Si, Ar and O ions and subsequently annealed at high temperatures. After annealing between 700 and 750°C the Ge implanted samples showed a strong increase in T_c up to 16.2 K. With Si ions only a T_c of 13 K was obtained, with Ar and O ions T_c remained below 9 K. From X-ray measurements carried out on high T_c Ge implanted samples it could be concluded that the implanted surface layer grows up to a high degree epitaxially on the single crystallites of the bulk material. The lattice constant $\text{a}$₀ of the implanted film was reduced by 0.02 Å with respect to the bulk material. This reduction in $\text{a}$₀ is stronger than expected from the transition temperature of the implanted surface layer.     

Upper critical fields of Nb3Ge thin film superconductors

The upper critical field H_c2(T) of the highest T_c(～23K) Nb₃Ge superconducting films has been found to be ≈370kG at 4.2K. Measurements on lower T_c films show very broad transitions reflecting nonuniformity. The H_c2(T) characteristics are consistent with other Nb₃X type II superconductors.     

Synthesis of superconducting compounds by thermolysis of volatile hydrides and organometallic compounds on glowing wires

The synthesis of high temperature superconducting phases in the NbGe, NbSn, VSi, VGe, VSn, NbC and MoC systems is described by method consisting in the thermolysis of volatile hydrides or organometallic compounds on resistively heated wires. For face-centred cubic NbC a higher transition temperature than previously reported was obtained. The A15 phase boundary of NbGe is extended towards the stoichiometric 3:1 composition, affording samples of Nb₃ Ge with a T_c onset of 15.8°K.     

Formation of near stoichiometric A15Nb3Si from annealing an amorphous alloy under high pressure

The A15Nb₃Si with a composition closed to stoichiometric compound has been synthesized under high pressure from a starting material of Nb₇₇Si₂₃ amorphous alloys. High pressure annealing was carried out in Bridgman anvils apparatus. The amorphous alloy would decompose into A15Nb₃Si, bcc Nb solid solution and hexagonal phase when it was annealed under a pressure lower or a temperature higher than that for forming single phase A15Nb₃Si. The yielded A15Nb₃Si exhibited a superconducting transition temperatureT _c of 19.1 K, and has been indexed unambiguously with a lattice parameter ofa=0.5093 nm. Moreover, a nonlinear relationship betweenT _c anda has been constructed from our experimental data, and aT _c of 27 K for stoichiometric A15Nb₃Si can be expected.     

Study of the correlation between the structure and critical temperatureT c of sputtered Nb-Ge films

Nb-Ge layers with continuous change of chemical and phase composition were prepared by the d.c. sputtering method. The dependence of critical temperatureT _c on phase composition, Ge-content, lattice imperfections and composition irregularities were studied. Films with highT _c contain beside the A-15 Nb₃Ge phase also the hexagonal and tetragonal modification of the Nb₅Ge₃ phase. Correlation betweenT _c and Nb₃Ge phase composition determined from the lattice parameter was found. In samples with highestT _c the lattice parametera ₀=0·5135 nm corresponding to 22–23 at.% of germanium was determined.     

Specific heat of high Tc,A-15 Nb0.75Ga0.25

The specific heat from 1.4 to 27 K has been measured on a NbGa sample that was approximately 85% A-15 Nb_0.76Ga_0.24 with a T_c of 19.8 K and a transition width of 1 K. The data imply that the density of states for A-15 Nb_0.75Ga_0.25 is 1.7 ± 0.25 states/eV-atom, in good agreement with recent band structure calculations. The Debye temperature is found to increase approximately 1 K per degree from T_c down to 4 K, with θ_D(0) = 280 K.     

Epitaxial growth of Nb3Ge on Nb3Ir and Nb3Rh

This is a report on a cooperative research carried out in Stanford University to investigate the possibility of using epitaxy to prepare the high T_c superconductor Nb₃Ge in an A15 crystalline structure at the 3:1 stoichiometry.Nb₃Ir polycrystalline films with the A15 structure deposited on sapphire were used as substrates for the epitaxial growth of Nb₃Ge because of the favorable lattice parameter match. The experimental results clearly show that epitaxial growth indeed occurs and helps to extend the range of homogeneity of the A15 phase up to 26.3 at.% Ge as compared with the thermodynamic equilibrium boundary at 19 at.% Ge. We also used Nb₃Rh films as substrates and found them inferior to Nb₃Ir because of the multiphase nature of the films.In addition to extending the A15 phase boundary epitaxy results in a considerable rise in the superconducting transition temperature for Ge-rich samples together with a reduction in the transition width. The work suggests that polycrystalline epitaxy can be an important tool in the synthesis of thin-film intermetallic compounds.