第V类两态叠加多模叠加态光场的广义非线性等阶N次方Y压缩

本文构造了由多模真空态|{0_j}>_q和多模虚相干态的相反态|{-iZ_j}>_q这两者的线性叠加所组成的第V类两态叠加多模叠加态光场|ψ₅⁽²⁾>_q.利用多模压缩态理论,研究了态|ψ₅⁽²⁾>_q的广义非线性等阶N次方Y压缩特性.结果发现:1)态|ψ₅⁽²⁾>_q是一种典型的多模非经典光场;无论压缩阶数N取奇还是取偶,只要各模的初始相位φ_j(j=1,2,3,…,…,q)和态间的初始相位差(θ_nq^(I)-θ_oq^(o))等满足一定的取值条件,态|ψ₅⁽²⁾>_q总可呈现出周期性变化的、任意奇数阶和任意偶数阶的广义非线性等阶N次方Y压缩效应.2)态|ψ₅⁽²⁾>_q所分别呈现的任意奇数阶和任意偶数阶的等阶N次方Y压缩效应,其压缩条件、压缩特征以及压缩程度和压缩深度等各不相同.3)无论压缩阶数N取奇还是取偶,态|ψ₅⁽²⁾>_q的第一和第二这两个正交分量的等阶N次方Y压缩效应总是呈现出周期性的互补关系.     

3-乙酰氨基苯乙酮的合成

苯乙酮经硝化、还原及酰化反应得到新型镇静催眠药佐匹配（Zaleplon)的重要中间体3－乙酰氨基苯乙酮。     

综合题新编选登

题 1 5　函数ｆ(ｘ) =11 ａ·2 ｂｘ的定义域为Ｒ ,且ｌｉｍｎ→∞ ｆ(-ｎ) =0 (ｎ∈Ｎ) .1 )求证 :ａ >0 ,ｂ <0 .2 )若 ｆ(1 ) =45 且ｆ(ｘ) 在 [0 ,1 ]上的最小值为 12 ,求证 :ｆ(1 ) ｆ(2 ) … ｆ(ｎ) >ｎ 12 ｎ 1- 12 (ｎ∈Ｎ) .证　 1 )∵ ｆ(ｘ) 的定义域为Ｒ ,∴ 1 ａ·2 ｂｘ≠ 0恒成立 ,即ａ≠ - 2 -ｂｘ,而 - 2 -ｂｘ<0 ,∴ａ≥ 0 ,若ａ =0 ,则ｆ(ｘ) =1与ｌｉｍｎ→∞ ｆ(-ｎ) =0矛盾 ,故ａ >0 .ｌｉｍｎ→∞ ｆ(-ｎ) =ｌｉｍｎ→∞11 ａ·2 -ｂｎ=1　　　 (0 <2 -ｂ<1 ) ,11 ａ　 (2 -ｂ=1 ) ,0　　　 (2 -ｂ>1 ) .∴ …     

超高速碰撞太阳电池阵诱发放电效应的实验研究

随着空间碎片的日益增多,在轨运行航天器的高压太阳电池阵受到空间碎片撞击的影响需要得到评估。通过二级轻气炮加载弹丸,应用Langmuir三探针和电流、电压探针对空间用硅太阳电池阵在不同碰撞速度下产生的放电效应进行了实验研究。结果表明,空间碎片撞击太阳电池阵会诱发产生放电现象,撞击过程产生的高浓度等离子体是放电现象产生的诱因,且碰撞速度越大,对太阳电池阵产生的损伤越严重。     

LD泵浦Nd∶YAG微片激光器异常强度噪声研究

针对实验中发现LD泵浦Nd∶YAG微片激光器的三类异常强度噪声,其强度波动幅度达20%~30%,严重影响了系统的稳定性,从理论和实验上对这三类强度噪声的特性进行了研究,包括外部光回馈引入的功率波动,LD异常噪声向固体激光器的传递,端泵浦偏离引起的模式耦合等。就各类噪声来源分别提出了相应的消除方法,抑制了微片Nd∶YAG激光器输出功率噪声,改善了激光输出特性,满足了频差精密测量的需要。     

GaN-based violet laser diodes grown on free-standing GaN substrate

A violet laser diode (LD) structure is grown on a free-standing c-plane GaN substrate and 4~μ m× 800~μ m ridge waveguide LDs are fabricated. The electrical and the optical characteristics of LDs under different facet-coating and chip-mounting conditions are investigated under pulse mode operation. The active region temperatures of p-side up and p-side down mounted LDs are calculated with different injection currents. The calculated thermal resistances of p-side up and p-side down mounted LDs are 4.6~K/W and 3~K/W, respectively. The threshold current of the p-side down mounted LD is much lower than that of the p-side up mounted LD. The blue shift of the emission wavelength with increasing injection current is observed only for the LD with p-side down mounting configuration, due to the more efficient heat dissipation.     

Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector.     

Caffarelli-Kohn-Nirenberg不等式的证明

先用函数表示和Picone恒等式的方法建立高维欧氏空间的一类Hardy型不等式,结合CAFFARELLI、KOHN、NIRENBERG三人证明Caffarelli-Kohn-Nirenberg不等式的思想,给出Caffarelli-Kohn-Nirenberg不等式的证明,突破原文需转化为一维情形的限制,对高维空间的情形直接证明,易于推广．     

单掺Rb+和Cs+的KTP晶体生长及其电导率

采用高温溶液降温法在掺质浓度均为5mol;的KTP-K4溶液中分别生长了单掺Rb+和Cs+的KTP晶体,发现掺质改变了晶体生长习性,在相应生长体系中掺质Rb+和Cs+的分配系数分别为O.646和0.08,掺质KTP晶体的晶胞参数a0和b0比纯KTP晶体者略有增长.通过掺Rb+或Cs+,KTP晶体的c向电导率明显降低,但晶体在350～1100nm范围内的光透过性质未受影响.     

非线性光学材料NaBa4Al2B8O18Cl3的固相合成与晶体生长

本文采用高温固相反应法在800℃合成了NaBa4Al2B8O18Cl3多晶粉末,探索了生长NaBa4Al2B8O18Cl3晶体的助熔剂,采用顶部籽晶技术分别以NaF和LiCl作助熔剂成功生长出NaBa4Al2B8O18Cl3透明晶体,晶体最大尺寸为22mm×22mm×15mm.粉末倍频测试测得NaBa4Al2B8O18Cl3晶体的粉末倍频强度为KDP的0.5～1.0倍.