| 单掺Rb+和Cs+的KTP晶体生长及其电导率 |
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| 引用本文： | 常新安,臧和贵,陈学安,肖卫强,张书峰.单掺Rb+和Cs+的KTP晶体生长及其电导率[J].人工晶体学报,2007,36(5):1052-1055. |
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| 作者姓名： | 常新安 臧和贵 陈学安 肖卫强 张书峰 |
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| 作者单位： | 北京工业大学材料科学与工程学院,北京,100022 |
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| 摘 要： | 采用高温溶液降温法在掺质浓度均为5mol;的KTP-K4溶液中分别生长了单掺Rb+和Cs+的KTP晶体,发现掺质改变了晶体生长习性,在相应生长体系中掺质Rb+和Cs+的分配系数分别为O.646和0.08,掺质KTP晶体的晶胞参数a0和b0比纯KTP晶体者略有增长.通过掺Rb+或Cs+,KTP晶体的c向电导率明显降低,但晶体在350～1100nm范围内的光透过性质未受影响.
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| 关 键 词： | 掺质KTP晶体 生长习性 分配系数 透过 c向电导率 |
| 文章编号： | 1000-985X（2007）05-1052-04 |
| 修稿时间： | 2007-07-19 |
Study on the Growth or Conductivities of Rb + or Cs + Doped KTP Crystals |
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| CHANG Xin-an,ZANG He-gui,CHEN Xue-an,XIAO Wei-qiang,ZHANG Shu-feng.Study on the Growth or Conductivities of Rb + or Cs + Doped KTP Crystals[J].Journal of Synthetic Crystals,2007,36(5):1052-1055. |
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| Authors: | CHANG Xin-an ZANG He-gui CHEN Xue-an XIAO Wei-qiang ZHANG Shu-feng |
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| Institution: | College of Material Science and Engineering, Beijing University of Technology, Beijing 100022 ,China |
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| Abstract: | Rb :KTP and Cs :KTP crystals have been grown respectively by slow cooling method in KTP-K6 high temperature solutions with 5mol% Rb or Cs . It is found that the crystal growth habit has been changed by the doping. The distribution coefficients of Rb or Cs in corresponding growth system are 0.646 and 0.08 respectively. The lattice parameters a0 and b0 of doped KTP crystal are slightly longer than those of pure KTP crystal. By the doping of Rb or Cs , the conductivity along c-direction of KTP crystal decrease obviously, but the transmission properties of KTP crystal in wave range of 350-1100nm have not be affected. |
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| Keywords: | doped KTP crystal growth habit distribution coefficient transmission c-direction conductivity |
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