非静水压下HMX炸药晶体的高压相变

HMX是一种性能优良的高能炸药,在武器工业中广泛使用。目前,HMX在高压下特别是非静水压下的相变规律仍存在争议。为此,采用不同的传压介质,开展了非静水压下HMX晶体的高压拉曼实验研究。结果表明,HMX晶体分别在4.9、13.9和17.5 GPa发生了结构相变。在13.9 GPa下,HMX开始发生相Ⅱ→相Ⅲ的相变,并在一定的压力范围内两相共存;当压力为17.5 GPa时,出现另一个新相(相Ⅳ),在17.5～23.6 GPa的压力范围内出现相Ⅱ、相Ⅲ和相Ⅳ三相共存现象。HMX晶体在非静水压下的相变路径与准静水压下的相变路径完全不同,非静水压环境下的压力梯度是造成该差异的原因。     

Self-screening of the polarized electric field in wurtzite gallium nitride along [0001] direction

The strong polarization effect of GaN-based materials is widely used in high-performance devices such as white-light-emitting diodes (white LEDs), high electron mobility transistors (HEMTs), and GaN polarization superjunctions. However, the current researches on the polarization mechanism of GaN-based materials are not sufficient. In this paper, we studied the influence of polarization on electric field and energy band characteristics of Ga-face GaN bulk materials by using a combination of theoretical analysis and semiconductor technology computer-aided design (TCAD) simulation. The self-screening effect in Ga-face bulk GaN under ideal and non-ideal conditions is studied respectively. We believe that the formation of high-density two-dimensional electron gas (2DEG) in GaN is the accumulation of screening charges. We also clarify the source and accumulation of the screening charges caused by the GaN self-screening effect in this paper and aim to guide the design and optimization of high-performance GaN-based devices.     

Large inverse and normal magnetocaloric effects in HoBi compound with nonhysteretic first-order phase transition

HoBi single crystal and polycrystalline compounds with NaCl-type structure are successfully obtained, and their magnetic and magnetocaloric properties are studied in detail. With temperature increasing, HoBi compound undergoes two magnetic transitions at 3.7 K and 6 K, respectively. The transition temperature at 6 K is recognized as an antiferromagnetic-to-paramagnetic (AFM-PM) transition, which belongs to the first-order magnetic phase transition (FOMT). It is interesting that the HoBi compound with FOMT exhibits good thermal and magnetic reversibility. Furthermore, a large inverse and normal magnetocaloric effect (MCE) is found in HoBi single crystal in the $H|| [100]$ direction, and the positive $\Delta S_{\rm M}$ peak reaches 13.1 J/kg$\cdot$K under a low field change of 2 T and the negative $\Delta S_{\rm M}$ peak arrives at $-18 $ J/kg$\cdot$K under a field change of 5 T. These excellent properties are expected to be applied to some magnetic refrigerators with special designs and functions.     

NaYF4 微晶与纳米晶中晶相对Tb3+ -Er3+ 耦合对下转换的影响

实验研究了晶相对下转换的影响。Tb³⁺ -Er³⁺ 耦合对将一个紫外光子(Tb³⁺ 的⁷F₆→⁵L₁)294 nm 剪裁成800 nm (Er³⁺ 的⁴I_9/2→⁴I_15/2) 和467 nm (Tb³⁺ 的⁵D₄→⁷F₆) 两个都能被GaAs 太阳能电池吸收的低能光子。采用水热法制备了NaYF₄六角相微晶和立方相纳米晶粒子,六角相由于具有热力学稳定性和有序的排列结构而更有利于量子剪裁过程的发生,相反在立方相结构中没有发现量子剪裁现象。分别采用294 nm 和355 nm波长的光对六角相NaYF₄进行激发,从发射光谱可以看出,下转换的实现是通过一个交叉弛豫过程完成的。实验结果表明,与熔融法相比,用水热法制备的NaYF₄ 的量子产率明显降低。     

用光纤探针测量飞层前界面状态的初步探索

 对用光纤探针测量飞层前界面微喷、微层裂等现象的机理进行了分析,设计了光纤探针与瞬态粒子场全息照相技术联合测量泰安药柱加载下铅飞层的前界面状态的实验。实验结果表明,光纤探针的测量结果与瞬态全息照相的结果相吻合,说明利用光纤探针可以对微喷粒子场进行有效探测,是一种很有发展潜力的测试技术。     

X射线硬化对面密度测量灵敏度的影响

利用蒙特卡罗方法分别研究了3种能量X光机的光子穿透不同厚度铝的硬化情况及3种能量光机作为光源测量面密度的过程,并开展了相关实验研究,根据模拟结果对比分析了不同能量光机X射线硬化对面密度测量灵敏度的影响,结果表明:对同种能量光机的光子而言,随着面密度变大,射线硬化程度越严重,导致测量灵敏度下降;光子能量越低,测量灵敏度随面密度变大下降越快,反之亦然;对于某一范围面密度被测物,调整X光机电压使X光子刚好穿透并形成有效图像,可获得最理想的测量灵敏度。     

Analysis on electrical characteristics of high-voltage GaN-based light-emitting diodes

<正>In order to investigate their electrical characteristics,high-voltage light-emitting-diodes(HV-LEDs) each containing four cells in series are fabricated.The electrical parameters including varying voltage and parasitic effect are studied. It is shown that the ideality factors(IFs) of the HV-LEDs with different numbers of cells are 1.6,3.4,4.7,and 6.4.IF increases linearly with the number of cells increasing.Moreover,the performance of the HV-LED with failure cells is examined.The analysis indicates that the failure cell has a parallel resistance which induces the leakage of the failure cell.The series resistance of the failure cell is 76.8Ω,while that of the normal cell is 21.3Ω.The scanning electron microscope(SEM) image indicates that different metal layers do not contact well.It is hard to deposit the metal layers in the deep isolation trenches.The fabrication process of HV-LEDs needs to be optimized.     

脉冲激光数字全息技术测量微形变

采用脉冲激光数字全息技术研究微小物体的三维形貌或形变等瞬态过程,实现应力场、流场及冲击波等超快物理现象的可视化诊断。通过对离轴数字全息中物参光夹角与CCD相机像素尺寸关系的理论分析,建立了小物参光夹角的脉冲激光离轴数字全息系统。该系统将单脉冲激光分成三束,通过调节光路中的反射镜,实现测试光与金属箔烧蚀光之间的时间同步,获得了激光烧蚀金属箔形变的动态图像,有助于研究短脉冲激光烧蚀金属靶产生的冲击波对物质微结构的影响。     

超细纳米Pd粒子与聚乙烯吡咯烷酮的相互作用

在微量聚乙烯吡咯烷酮(PVP)存在下, 利用超声还原氯化钯水溶液, 制备出超细纳米Pd颗粒, 用高分辨透射电镜、红外光谱、紫外-可见光谱和X射线光电子能谱等技术对其表面形貌及结构进行了表征. 结果表明, 纳米Pd粒子的粒径均一, 大约为3 nm. 纳米Pd/PVP复合粉末的羰基红外吸收峰比PVP的羰基吸收峰红移9 cm^-1; 且当超声反应50 min时, PVP紫外吸收波峰蓝移16 nm, 表明了纳米Pd与PVP之间存在一定的相互作用力. XPS结果证明, 纳米Pd与PVP的羰基基团通过配位作用使超细纳米Pd粒子得以稳定分散存在.     

Improving performances of ITO/GaP contact on AlGaInP light-emitting diodes

In this paper AlGaInP light emitting diodes with different types of electrodes:Au/Zn/Au-ITO Au/Ti-ITO Au/Ge/Ni-ITO and Au-ITO are fabricated. The photoelectricity properties of those LEDs are studied. The results show that the Au/Zn/Au electrode greatly improves the performance of LEDs compared with the other electrodes. Because the Au/Zn/Au electrode not only forms a good Ohmic contact with indium tin oxide (ITO), but also reduces the specific contact resistances between ITO and GaP, which are 1.273×10-6 ·cm2 and 1.743×10-3 ·cm2 between Au/Zn/Au-ITO and ITO-GaP respectively. Furthermore, the textured Zn/Au-ITO/Zn electrode is designed to improve the performances of LEDs, reduce the forward-voltage of the LED from 1.93 to 1.88 V, and increase the luminous intensity of the LEDs from 126 to 134 mcd when driven at 20 mA.