利用副干酪乳杆菌发酵风味鱿鱼制品条件研究

为进一步提高鱿鱼的食用品质, 以北太鱿鱼作为副干酪乳杆菌Lpsi的发酵基质, 研究料液比、菌株接种量、蔗糖添加量、发酵时间、发酵温度对鱿鱼发酵效果的影响. 采用响应面法对发酵条件进行优化, 得到副干酪乳杆菌发酵鱿鱼的最佳优化条件为: 料液比1:1.92、发酵温度31.42℃、加糖量3.16%、接种量4%, 发酵时间48h. 在此条件下, 鱿鱼发酵液的实际氨基氮含量达到0.63g?L-1. 鱿鱼经过副干酪乳杆菌蛋白酶的分解作用, 呈味氨基酸含量上升, 提高了人体必需氨基酸含量及易消化吸收性, 使其营养性和保健性得到进一步增强.     

γ-and α-Ce phase diagram: First-principle calculation

Controversies about the phase diagram for the isostructural γ ? α phase transition of cerium have long been standing out for several decades. To seek insight into the problems, high-precision equations of state(EOS) for γ-and α-cerium are constructed based on first-principle calculation. Versus previous works, the strong anharmonic effects of ion vibration and the variation of magnetism of γ-cerium are stressed. The new EOS generally agrees well with experimental data regarding thermodynamics, phase diagrams, and phase transitions. However, new EOS predicts that another part of phase boundary in pressure-temperature space may exist except for the commonly known boundary. In addition, the well-known critical point seems to be a critical point for γ-cerium to translate from a stable state to an unstable state.     

Electrical controllable spin valves in a zigzag silicene nanoribbon ferromagnetic junction

We propose two possible spin valves based on a zigzag silicene nanoribbon(ZSR) ferromagnetic junction. By using the Landauer–B u¨tikker formula, we calculate the spin-resolved conductance spectrum of the system and find that the spin transport is crucially dependent on the band structure of the ZSR tuned by a perpendicular electric field. When the ZSR is in the topological insulator phase under a zero electric field, the low-energy spin transport and its ON and OFF states in the tunneling junction mainly rely on the valley valve effect and the edge state of the energy band, which can be electrically modulated by the Fermi level, the spin–orbit coupling, and the local magnetization. When a nonzero perpendicular electric field is applied, the ZSR is a band insulator with a finite energy gap, the spin switch phenomenon is still preserved in the device and it does not come from the valley valve effect, but from the energy gap opened by the perpendicular electric field. The proposed device might be designed as electrical tunable spin valves to manipulate the spin degree of freedom of electrons in silicene.     

新型溶胶-凝胶二氧化硅微孔增透膜的制备及性能研究

以正硅酸乙酯为前驱体,二甲基二乙氧基硅烷为造孔剂,采用溶胶凝胶技术在酸催化条件下制备了二氧化硅溶胶;采用提拉法在K9玻璃基片上双面镀膜,经500 ℃热处理,制备得到一种新型单层微孔二氧化硅增透膜。通过改变造孔剂加入量,膜层峰值透过率可达到99.7％,而硬度仍保持在2H以上,同时具有良好的耐摩擦性及粘附性。加速腐蚀实验表明,膜层的环境稳定性是常规膜层的10倍以上。由于该新型增透膜兼具高透过率、良好的机械性能以及很强的环境稳定性,因而在改善太阳能玻璃增透性能方面有极大的应用价值。     

汞(Ⅱ)-邻菲啰啉-刚果红缔合体系的共振瑞利散射和共振非线性散射光谱及分析应用

在pH=9.0的弱碱性环境中,Hg2+与邻菲啰啉(phen)反应形成无色螯合物[Hg(phen)3]2+,再与刚果红(CR)反应,形成三元离子缔合物Hg(phen)3CR,其摩尔比为1∶1。 此时引起共振瑞利散射(RRS)、二级散射(SOS)和倍频散射(FDS)光谱显著增强,最大的散射波长分别位于578 nm(RRS法)、612 nm(SOS法)和352 nm(FDS法)。 在一定条件下,散射增强(ΔI)与Hg2+浓度呈良好的线性关系,检出限分别为2.32 μg/L(RRS法)、3.20 μg/L(SOS法)和1.56 μg/L(FDS法),考察了最佳实验条件和影响因素,表明本方法具有良好的选择性,并以RRS法为例研究了共存物质的影响。 据此建立了灵敏度高、选择性好、快速准确测定Hg2+的光散射新方法,该方法用于环境水样中Hg2+的测定取得满意结果。 并对RRS增强的原因和反应机理进行了讨论。     

可溶性苝四羧酸二酰亚胺发光材料的合成及表征

以苝四酸酐为原料合成了1,7-二溴-3,4,9,10-苝四酸酐(PeryBr₂)、N,N′-二(十二烷基)-1,7-二溴-3,4,9,10-苝四羧酸二酰亚胺(DD-PeryBr₂)和N,N′-二(十二烷基)-1,7-二对叔丁基苯氧基-3,4,9,10-苝四羧酸二酰亚胺(DD-PeryBp₂) 3种苝四羧酸二酰亚胺类化合物,并对其结构和性能利用紫外-可见吸收光谱、傅立叶红外光谱、核磁共振、质谱、热分析和荧光光谱测试技术进行了表征和测试。 结果表明,DD-PeryBp₂能很好的溶于甲苯、氯仿、四氢呋喃等常用有机溶剂。 紫外可见最大吸收波长和荧光最大发射波长分别为548和576 nm。 DD-PeryBp₂具有很好的热稳定性,质量损失5%时的温度为433 ℃。     

4H-SiC肖特基二极管γ射线探测器的模型与分析

 在研究反偏压4H-SiC肖特基二极管作为g射线探测器工作机理的基础上建立了数值模型,模拟了不同偏压和辐照剂量率下探测器的暗电流、工作电流和灵敏度。模拟结果表明:探测器的灵敏度随反向偏压的增加而上升;对于Au/SiC肖特基二极管,有源区掺杂数密度为2.2×10¹⁵ cm^-3时,0 V偏压下探测器的灵敏度为13.9×10^-9 C/Gy,100 V偏压下为24.5×10^-9 C/Gy。计算结果与实验数据符合得较好。     

ICF靶材料和靶制备技术研究进展

 主要介绍了中国工程物理研究院ICF靶材料科学与靶制备技术在材料研究、靶丸制备技术、薄膜制备技术、精密微工艺及靶参数测量等方面的主要研究进展。在靶材料研究方面,近年相继研制成功全氘代聚苯乙烯（D-PS）有机材料、微靶掺杂和激光吸收与X射线转换金属纳米或团簇材料;探索了新型有机气凝胶储氢材料,开展了金属小团簇理论研究和纳米金属复合材料的研究工作。在靶制备技术与工艺方面,完成了PS单层、双层和三层塑料空心微球的研制工作;利用低温等离子体聚合涂层技术,建立了微球表面沉积纯CH薄膜以及金属掺杂CH薄膜的工艺和技术;在玻璃微球充氩技术研究中,开展了原子力扫描显微镜对玻璃球壳钻孔工艺研究以及粒子辐照改性充气技术研究,等等。     

SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes

This paper presents the results of unintentionally doped 4H-SiC epilayers grown on n-type Si-faced 4H-SiC substrates with 8° off-axis toward the [11\overline 2 0] direction by low pressure horizontal hot-wall chemical vapour deposition. Growth temperature and pressure are 1580~°C and 10⁴~Pa, respectively. Good surface morphology of the sample is observed using atomic force microscopy (AFM) and scanning electron microscopy (SEM). Fourier transform infrared spectroscopy (FTIR) and x-ray diffraction (XRD) are used to characterize epitaxial layer thickness and the structural quality of the films respectively. The carrier concentration in the unintentional 4H-SiC homoepitaxial layer is about 6.4×10¹⁴~cm^-3 obtained by c--V measurements. Schottky barrier diodes (SBDs) are fabricated on the epitaxial wafer in order to verify the quality of the wafer and to obtain information about the correlation between background impurity and electrical properties of the devices. Ni and Ti/4H-SiC Schottky barrier diodes with very good performances were obtained and their ideality factors are 1.10 and 1.05 respectively.