闪烁体荧光传输特性对ETOF探测器性能的影响

为了对BESⅢ端盖飞行时间探测器(ETOF)的测试结果给出合理的解释, 采用Monte Carlo模拟软件包Geant4, 对该探测器测量高能带电粒子的性能进行模拟研究. 详细探讨了当粒子击中ETOF模块不同位置时, 其闪烁体荧光传输特性与探测器模块输出信号之间的关联, 以及PMT输出信号甄别阈值的选取对闪烁探测器本征时间分辨的影响, 并寻找可能的改善时间分辨的方法. 为进一步提高ETOF的性能提供参考.     

大电流稳定发射铁电阴极的模拟与实验研究

讨论了铁电阴极的发射机理, 借助MAFIA对不同电极结构的铁电阴极表面电场分布进行了模拟计算. 计算中发现, 发射面电极结构对铁电阴极表面三界点处的场增强效应影响很大,特别是具有孤岛电极结构的铁电阴极具有更大的三界点场强,从而获得更大和更稳定的发射电流. 通过对电极结构及其工艺的改进,使用PLZT铁电阴极在实验中得到了大于100A的电流.     

Double-Humped Transverse Density Profile in Two-Dimensional Chute Flow with Rough Sidewalls

We study a two-dimensional granular rapid flow with rough sidewalls stuck with the same size discs by molecular dynamics simulation. A transient state of the double-humped density profile in the flowing process has been found, which appears and moves as travelling wave and is the same as the phenomena in the recent experiments [Acta Phys. Sin. 53 （2004） 3389 （in Chinese）]. Our simulation shows that the rough sidewalls play an important role in the converting momentum of boundary discs from the vertical direction to the horizontal one through particle collisions to form this profile and the good elasticity of discs ensures this effect. The appearance of the double-humped profile may be a precursor, which determines if the whole flow will be far repulsed from the boundary and become dilute eventually.     

SHFE与LME期铜价格关系实证研究

本文介绍了Granger引导关系模型,并利用这个模型对伦敦金属交易所(LME)三个月期铜和上海期货交易所(SHFE)五个月期铜进行了价格引导关系检验。检验结果显示,伦敦金属交易所三个月期铜价格滞后引导上海期货交易所五个月期铜价格,但是上海期货交易所对伦敦金属交易所的期铜价格不具有滞后价格引导关系。     

线性规划的符号跟踪算法

分析了只含一个约束条件的线性规划最优基变量的特征，将其运用到搜寻含m个约束条件的线性规划的最优基变量，从而提出了线性规划的符号跟踪算法，为线性规划求解提供了新途径。     

Time-Resolved Femtosecond Degenerate Four-Wave Mixing in LiNbO3：Fe,Mg Crystal

Forward degenerate four-wave mixing （DFWM） processes are investigated with a femtosecond pulsed laser in lithium niobate crystal doubly-doped with magnesium and iron （LiNbO3：Fe, Mg）. The pulse energy dependence reveals a pure third-order nonlinear response, and the third-order nonlinear susceptibility x^（3） in the material is evaluated to be 4.96 × 10^-13 esu. The time-resolved DFWM process shows a response time of x^（3） shorter than 100fs, which is due to the nonresonant electronic nonlinearities. Our results indicate that LiNbO3 crystals have potentials for ultrafast real-time optical processing systems, which require a large and fast x^（3） optical nonlinearity.     

用地面阵列寻找TeV能区γ点源的方法探讨

文中探讨搜寻TeV能区γ点源的方法.讨论利用student变量t判断来自源区及背景区宇宙线事例的统计差别,并由Bayes定理与MonteCarlo模拟相结合计算源区各能段的信号数,推算蟹状星云在TeV能区的γ射线微分能谱     

岩盐型ZnO纳米微粒的光电子发射结构

报道了岩盐型氧化锌纳米微粒的X射线光电子发射结构,发现其中3d电子的强烈成键作用,还存在着3d-4sp杂化和离域电子弛豫态的贡献,表现出与纤锌矿型明显的差异. 关键词：     

A Two-Dimensional Photonic Crystal Slab Mirror with Silicon on Insulator for Wavelength 1.3μm

A concrete two-dimensional photonic crystal slab with triangular lattice used as a mirror for the light at wavelength 1.3μm with a silicon-on-insulator （SOI） substrate is designed by the three-dimensional plane wave expansion method. For TE-like modes, the bandgap in the Г-K direction is from 1087nm to 1559nm. The central wavelength in the bandgap is about 1.3μm, hence the incident light at wavelength 1.3μm will be strongly reflected. Experimentally, such a photonic crystal slab is fabricated on an SOI substrate by the combination of EBL and ICP etching. The measurement of its transmission characteristics shows the bandgap edge in a longer wavelength is about 1540 nm. The little discrepancy between the experimental data and the theoretical values is mainly due to the size discrepancy of the fabricated air holes.     

Multiple-State Storage Capability of Stacked Chalcogenide Films （Si16Sb33Te51/Si4Sb45Te51/Si11Sb39Te50） for Phase Change Memory

The multiple-state storage capability of phase change memory （PCM） is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si-Sb-Te layers triggered by different amplitude currents.