Stochastic Simulation of Turing Patterns

We investigate the effects of intrinsic noise on Turing pattern formation near the onset of bifurcation from the homogeneous state to Turing pattern in the reaction-diffusion Brusselator. By performing stochastic simulations of the master equation and using Gillespie＇s algorithm, we check the spatiotemporal behaviour influenced by internal noises. We demonstrate that the patterns of occurrence frequency for the reaction and diffusion pro- cesses are also spatially ordered and temporally stable. Turing patterns are found to be robust against intrinsic fluctuations. Sfochastic simulations also reveal that under the influence of intrinsic noises, the onset of Turing instability is advanced in comparison to that predicted deterministically.     

L-Shell X-Ray Yields and Production Cross Sections of Zr and Mo Bombarded by Slow Highly Charged Ar16+ Ions

The L-shell x-ray yields of Zr and Mo bombarded by slow Ar16＋ ions are measured. The energy of the Ar^16＋ ions ranges from about 150 keV to 350 keV. The L-shell x-ray production cross sections of Zr and Mo are extracted from these yields data. The explanation of these experimental results is in the framework of the adiabatic direct- ionization and the binding energy modified BEA approximation. We consider, in the slow asymmetric collisions such as Ar and Mo/Zr, the transient united atoms （UA） are formed during the ion-surface interaction and the direct-ionization is the main mechanism for the inner-shell vacancy production. Generally, the theoretical results are in good agreement with the experimental data.     

低电荷态离子原子碰撞过程中的转移电离机理的研究

介绍了使用位置灵敏技术和飞行时间方法研究中低能低电荷态离子-原子碰撞过程中转移电离与单电子俘获过程.对于确定的入射离子电荷态,通过理论分析及与实验数据对比给出了转移电离与单电子俘获截面比R_TS随着入射离子速度V_P的变化规律和转移电离过程中电离的电子主要来自靶原子的最外亚壳层. 关键词： 转移电离 逃离半径 电离半径 俘获半径     

一维等离子体光子晶体的带隙研究

采用时域有限差分方法(FDTD),结合等离子体计算中的分段线性电流密度卷积技术(PLJERC)对一维等离子体光子晶体(1D-PPC)进行了数值模拟,给出了微分高斯脉冲在一维等离子体光子晶体中的传播过程。计算得到的带隙结构与K-P模型方法的结果一致。计算并分析了等离子体频率、介质介电常数、等离子体-介质层的厚度比以及周期厚度对一维等离子体光子晶体带隙结构的影响。     

湖北钉螺指名亚种一输入性扩散事件的群体遗传学

2017年南昌市滨江公园赣江江滩发现大面积钉螺滋生,此为市区内首次。为追溯该种群的输入来源,本研究根据湖北钉螺采样点的地理分布进行分组,测定湖北钉螺线粒体12S rRNA、16S rRNA及CO1基因,并结合GenBank数据库中已上传序列,统计分析遗传分化系数（Fst）、基因流（Nm）等群体遗传学参数,构建单倍型网络图。基于CO1基因及12S rRNA、16S rRNA、CO1三者联合基因的结果表明来自滨江公园的湖北钉螺种群与来自武汉的湖北钉螺种群遗传背景相似;但和12S rRNA、16S rRNA基因单独分析的结果存在差异可能由于其组内样本量较少导致。各基因构建的单倍型网络图均显示:湖北钉螺滨江公园种群与武汉种群的单倍型间有直接演化关系。本研究从分子种群遗传学层面初步证实了"南昌市滨江公园输入性湖北钉螺群体可能由移栽自武汉市黄陂区的景观芦苇携带而来"的流行病学调查结果,同时表明线粒体CO1基因能够提供较丰富的信息以追溯湖北钉螺未知群体的来源。     

单位圆内解析函数和整函数四则运算的精确级和精确型

利用Nevanlianna值分布对具有精确级整函数与单位圆内的解析函数,具有相同增长级和不同型的整函数和解析函数f1（z）与f2（z）四则运算后的精确级、级、精确型和型进行了研究,得到了一些结果,完善了原有的一些结论。     

物理演示实验教学在高素质新型军事人才培养中的作用

培养高素质新型军事人才是国防科技大学的核心任务之一.物理演示实验以直观、形象地演示物理现象为课程特色,可有效提高学员对物理规律、物理本质的直观认识和深刻理解,并引起学员的深入思考,在教学实践中可促进学员科学素质、综合能力和创新能力的提高.     

Design and fabrication of GeAsSeS chalcogenide waveguides with thermal annealing

We reported a chalcogenide glass-based rib waveguide fabricated using photolithography and dry etching method. A commercial software(COMSOL Multiphysics) was used to optimize the waveguide structure and the distribution of the fundamental modes in the waveguide based on the complete vector finite component. We further employed thermal annealing to optimize the surface and sidewalls of the rib waveguides. It was found that the optimal annealing temperature for Ge As Se S films is 220℃, and the roughness of the films could be significantly reduced by annealing. The zero-dispersion wavelength(ZDW) could be shifted to a short wavelength around ~2.1 μm via waveguide structural optimization, which promotes supercontinuum generation with a short wavelength pump laser source. The insertion loss of the waveguides with cross-sectional areas of 4.0 μm×3.5 μm and 6.0 μm×3.5 μm was measured using lens fiber and the cut-back method. The propagation loss of the 220℃ annealed waveguides could be as low as 1.9 d B/cm at 1550 nm.     

915 nm宽条形半导体激光器输出特性

为了研究温升对915 nm宽条形应变量子阱半导体激光器输出特性的影响,搭建了基于半导体制冷片(TEC)的双向温控平台对其进行了测试。首先,改变激光器的外表面温度,测量其在不同注入电流时的光功率和波长,并利用CCD相机测量其慢轴发散角。然后,利用计算机仿真软件对激光器的工作状态进行稳态模拟,从而获得了其对应的热分布情况,通过将模拟得到的数据与实验测量的结果进行比较,获得了两者趋于一致的结论:当热功率从2.1 W升高至20.0 W时,慢轴发散角从2.6°增大至5.0°,同时波长发生红移,热透镜焦距减小;激光器波长随温度变化关系的系数约为0.4 nm/℃,器件热阻为1.5 K/W。因此,为了同时获得高的输出功率和稳定的输出波长,有必要将激光器外表面温度精确控制在某一数值,否则波长将会发生漂移;此外,在设计制作高功率半导体激光器时,通过适当增加条宽并采用散热良好的封装结构,可以减小对慢轴发散角的影响。