Polyvinylpyrrolidone and graphene-modified hematite nanoparticles for efficient electrocatalytic oxidation of p-nitrophenol

Journal of Solid State Electrochemistry - Polyvinylpyrrolidone (PVP) and graphene (G)-modified iron oxides (Fe2O3-PVP-G) are prepared by a simple hydrothermal reaction. Their morphology and...     

A New Radar-Signal Parameter for Recognition of Wind-Related Weather Hazards

Radiophysics and Quantum Electronics - Wind-related weather hazards remain difficult to recognize targets for weather radars. Methods that use estimates of the width of the reflected-signal...     

Uniform local well-posedness and inviscid limit for the Benjamin-Ono-Burgers equation

In this paper, we study the Cauchy problem for the Benjamin-Ono-Burgers equation \({\partial _t}u - \epsilon \partial _x^2u + {\cal H}\partial _x^2u + u{u_x} = 0\), where \({\cal H}\) denotes the Hilbert transform operator. We obtain that it is uniformly locally well-posed for small data in the refined Sobolev space \({\tilde H^\sigma }(\mathbb{R})\,\,(\sigma \geqslant 0)\), which is a subspace of L²(ℝ). It is worth noting that the low-frequency part of \({\tilde H^\sigma }(\mathbb{R})\) is scaling critical, and thus the small data is necessary. The high-frequency part of \({\tilde H^\sigma }(\mathbb{R})\) is equal to the Sobolev space H^σ (ℝ) (σ ⩾ 0) and reduces to L²(ℝ). Furthermore, we also obtain its inviscid limit behavior in \({\tilde H^\sigma }(\mathbb{R})\) (σ ⩾ 0).

     

Optical Multisensor Systems in Analytical Spectroscopy

Journal of Analytical Chemistry - A review of works in developing optical multisensor systems, a new class of specialized spectroscopic analyzers, is presented. The development and use of such...     

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

Asymptotic Behavior of Least Energy Solutions for a Fractional Laplacian Eigenvalue Problem on ℝN

Acta Mathematica Sinica, English Series - We are interested in the existence and asymptotic behavior for the least energy solutions of the following fractional eigenvalue problem $$\left({\rm{P}}...     

Numerical Simulation of Physical Fields by the Collocation Method

Russian Physics Journal - The article describes the collocation method for the numerical solution of mathematical physics boundary value problems. By arranging the collocation nodes in a special...