利用相位共轭技术补偿光纤中色散效应的条件

利用相位共轭器的频率反转特性的,补偿光纤中的色散效应,在理论上和实验上得到了证明.由色散脉冲的傅里叶交换确定了光纤中二次色散效应可以被忽略的条件,得到了共轭器的反射率和带宽与非线性介质的长度L,参数|K|L之间的关系曲线,找到了影响补偿效果的主要因素.     

正方分布的4×4单模光纤熔锥耦合器耦合特性分析

本文以线性耦合波方程为基础,采用散射矩阵的方法讨论了具有正方分布的4×4单模光纤熔锥形耦合器的耦合特性,并与实验作了比较,得到了比较一致的结果。     

亚细胞器诱导的2,4,6-三硝基甲苯阴离子自由基的ESR研究

本文在无氧条件下利用ESR分别观察了肝脏和晶状体的微粒体及线粒体酶在NADPH存在下还原三硝基甲苯(TNT)的过程,检测到参数为g=2.0048±0.0005,A_对位~N=1.215mT,A~N=0.800±0.010mT,A~H=0.122±0.0206mT的自由基信号,并通过电子计算机对ESR谱的模拟证明该自由基信号为TNT硝基阴离子自由基,根据其超精细分裂常数认为,其不配对电子的电子云密度主要分布在对位硝基上。     

Diffusion via splitting and remeshing via merging in vortex methods

The technique of splitting a fat vortex element (with a core width larger than some threshold) into some thin ones in order to fix the convergence problem of the core‐spreading vortex methods is convenient and efficient. In particular, it keeps the method purely Lagrangian. In the present investigation, the splitting process is further viewed as part of the physical diffusion process. A new splitting method in which several weaker child vortices surround a thinned but still strong parent vortex is proposed. It is found that because of the survival of the parent vortex, the error arising from the splitting events can be largely reduced. The computational amount on the other hand is kept reasonably large by merging similar and close‐by vortices. The merging scheme designed herein not only involves fewer restrictions but also allows merging vortices of opposite rotations through the viewpoint of remeshing. The validity and accuracy of these techniques, proposed particularly for simulations undergoing lots of splitting and merging events, are verified by successfully simulating the interactions between two Burgers vortices under an external straining field. Copyright © 2005 John Wiley & Sons, Ltd.     

低通量慢中子对Bi系超导体的辐照效应

本文研究低通量慢中子对Bi系超导体的辐照效应。实验结果表明:(1)Bi系超导体在适量慢中子辐照后,临界电流密度J_c和零电阻温度T_c0都有不同程度提高;(2)低通量慢中子和高通量快中子对Bi系超导体具有相似的辐照效应。 关键词：     

PINNING EFFECT OF LEAD LANTHANUM TITANATE THIN FILMS DEPOSITED ON DIFFERENT SUBSTRATES

Pinning effect of lead lanthanum titanate (PLT) ferroelectric thin films with excess PbO of 20 mol% has been studied for deposition on diffe rent substrates. Silicon, sapphire and quartz were used as substrates on which P t/Ti or LaNiO₃ thin films were deposited as bottom electrodes. Electron probe analysis results showed that there was still a certain amount of excess Pb in PLT films after annealing at 550 ℃ for 1 h, and the amount of it was dependent on the substrate used. The distribution of excess Pb in the films was investig ated by Auger electron spectroscopy depth profile. It was shown that the substrates and the bottom electrodes had significant effects on the content and distrib ution of excess Pb in PLT films. The excess Pb and its accumulation at the inter face between the film and bottom electrode may act as pinning centers and have a pinning effect on domains, which can be observed by abnormal P-E hysteresis loops and abnormal C-V curves. The excess Pb content in the films and the accumulation of Pb at the interface were high in PLT films deposited on Pt/Ti/S i, and considerable pinning effect was observed. As LaNiO₃ would absorb most part of the excess Pb in PLT films, the content of excess Pb in the films deposited on LaNiO₃/Si was very low and the pinning effect was hardly observed.     

Self-Assembly of Micro-Parts onto Si Substrates at Liquid-Liquid Interface

We report a new approach for the self-assembly of cuboid micro-parts onto Si substrates to construct three-dimensional microstructures. To perform assembly, the Si substrates are prepared with a deep cavity array as binding sites. An aggregate composed of hundreds of uniformly aligned micro-parts is formed at the C10F18-H2O interface. The micro-parts are arranged by passing the substrate through the aggregate of micro-parts, thus the micro-parts are left on the substrate, and then the substrate is vibrated ultrasonically in the solution, making it possible for the micro-parts to fall into the cavities on the substrate. Finally the substrate is pulled out of the solution after assembly. This technique could give a high yield of up to 70%, providing a new method for micro-assembly.     

Reduction of Dislocations in GaN Epilayer Grown on Si （111） Substrates using a GaN Intermedial Layer

GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AIN/Si（111） substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional （3D） mode to the 2I） one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy （TEM） measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.     

一种非刚性医学图像点匹配方法

提出了一种非刚性点匹配的算法并把其运用于医学图像配准．该算法采用信号滤波的方法来获得点集间的匹配信息，并运用松弛标记法将各点邻域关系对模糊的匹配信息进行迭代获得明确的匹配关系．在此基础上，利用高斯径向基函数来描述点模式间的弹性形变，在基本的迭代框架下实现问题的求解．实验结果显示在形变程度为5％、出格点比率50％和噪声标准差为5％的情况下该算法的匹配误差能控制在0．13以下，表明了该算法的鲁棒性和有效性，较好地解决了医学非刚性形变的点匹配问题．     

Phenylene vinylene‐based electroluminescent polymers with electron transport block in the main chain

We report a new route for the design of soluble phenylene vinylene (PV) based electroluminescent polymers bearing electron‐deficient oxadizole (OXD) and triazole (TZ) moieties in the main chains with the aryloxy linkage. Both series of the PV‐based polymers were prepared by Wittig reaction. By properly adjusting the OXD and/or TZ content through copolymerization, we can achieve an enhanced balance of hole‐ and electron injections, such that the device efficiency is significantly improved. Light‐emitting diodes fabricated from P1, P2, P3, P4, P5, P6, and P7 with the configuration of Indium–Tin Oxide (ITO)/Poly (styrene sulfonic acid) doped poly (ethylenedioxythiophene) (PEDOT)/polymer/Ca/Al, emit bright green light with the maximum peak around 500 nm. For the device using the optimal polymer (P4) as emitting layer, a maximum brightness of 1300 cd/m² at 20 V and a maximum luminance efficiency of 0.325 cd/A can be obtained. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 3469–3478, 2006