源气体对沉积的a-C∶F∶H薄膜结构的影响

采用微波电子回旋共振等离子体化学气相沉积(MWPECRCVD)方法,使用不同的源气体(CHF3CH4,CHF3C2H2,CHF3C6H6)体系制备了aC∶F∶H薄膜.由于CH4,C2H2,C6H6气体在等离子体中的分解反应不同导致了薄膜的沉积速率和结构上的差异.红外吸收谱的结果表明,用C6H6CHF3作为源气体沉积的薄膜中几乎不含H,而用C2H2CHF3所沉积的薄膜中的含氟量最高,其相应的CF振动峰位向高频方向偏移.薄膜的真空退火结果表明,aC∶F∶H薄膜的热稳定性除了取决于薄膜的CC键浓度外,还与CC键 关键词： 氟化非晶碳膜 电子回旋共振化学气相沉积 红外吸收光谱     

KrVI离子能级和振子强度的理论计算

利用组态相互作用理论和参数外推法,计算了KrVI离子4s~24p—4s4p~2、4s~24p—4s~24d和4s4p~2—4p~3跃迁的能级、谱线波长和振子强度。与已有实验结果比较表明:波长的理论计算值与观测值在0.7A内很好符合,振子强度的理论计算值较大的跃迁均是实验中观测到的跃迁。     

氢化丁苯共聚物结构的核磁共振波谱表征Ⅰ.13C谱带的归属

本文分别用JEOL FX-90Q和Bruker AM-300波谱仪测定了氢化聚丁二烯和氢化丁苯共聚物的¹H,¹³C-NMR谱,得到了分辨率较高的谱图和新的结构信息。借助DEPT技术确定了各谱带的CH或CH₂类型。利用Grant-Paul和Lindeman-Adams介绍的化学位移经验计算公式,考虑苯基对α、β和γ碳原子的影响,计算了各种三单元序列中有关碳原子的化学位移。对脂肪碳部分的28组谱带重新进行了归属。化学位移计算值与实测值基本相符,并得到了不同组成的模型聚合物¹³C-NMR谱的各谱带强度变化规律的验证。     

Frequent oscillation in a nonlinear partial difference equation

This paper is concerned with a class of nonlinear delay partial difference equations with variable coefficients, which may change sign. By making use of frequency measures, some new oscillatory criteria are established. This is the first time oscillation of these partial difference equations is discussed by employing frequency measures.      

On interior points of a set of equations with singular periodic solutions

We present and exemplify a condition for the existence of singular periodic solutions to an equation of the Riccati type and all proximate equations.     

十四烷基三甲基溴化铵对膨润土改性合成及其表征

用阳离子表面活性剂十四烷基三甲基溴化铵(C17H38NBr)对膨润土进行插层改性制备.配制浓度为2.35%十四烷基三甲基溴化铵溶液备用.在碘量瓶中称取3.04g膨润土,加入30mL超纯水、10mL十四烷基三甲基溴化铵溶液,制成土浆,放入微波炉中反应1min.产物经抽滤、洗涤、烘干、研磨,做FT-IR和DSC-TG分析.DSC曲线在500℃时有一明显的放热峰;TG曲线显示改性土的失重率有明显的增大.有机改性膨润土中确实含有大量有机物,改性成功.     

Strongly Modular Subgroup in Finite Group

Ｓｔｒｏｎｇｌｙ　Ｍｏｄｕｌａｒ　Ｓｕｂｇｒｏｕｐ　ｉｎ　Ｆｉｎｉｔｅ　ＧｒｏｕｐＳｔｒｏｎｇｌｙＭｏｄｕｌａｒＳｕｂｇｒｏｕｐｉｎＦｉｎｉｔｅＧｒｏｕｐ￥ＹｕＪｉａｎｌｉ；ＪｉａｏＤｏｎｇｗｕ（ＬｕｏｙａｎｇＩｎｓｔｉｔｕｔｅｏｆＴｅｃｈｎｏｌｏｇ...     

Muonium states in semiconductor crystals: Quantum-chemical calculations

The electronic structure of muonium (Mu) located at the bond-centered sites of the silicon and diamond crystals is calculated by the intermediate neglect of differential overlap method. Calculations of the electronicg- and hyperfine interaction tensors of the impurity atom are performed. The results obtained are compared to the experimental properties of “anomalous” muonium Mu^*. It is shown that the properties of Mu located at the bond-centered sites of the Si and C lattices are in qualitative agreement with the observed properties of Mu^*.     

Ge_x Si_(1-x)/Si超晶格中纵声学声子的喇曼散射强度研究

本文用光弹理论,在全面考虑了超晶格中两种材料的声速,质量密度和光弹常数存在差别的基础上,计算了Ge_xSi_(1-x)/Si超晶格中折迭纵声学声子的喇曼散射强度,在高达50cm~(-1)的频率范围内,理论值和实验符合得很好。