Channel temperature determination of a multifinger AlGaN/GaN high electron mobility transistor using a micro-Raman technique

Self-heating in a multifinger AlGaN/GaN high electron mobility transistor (HEMT) is investigated by micro-Raman spectroscopy. The device temperature is probed on the die as a function of applied bias. The operating temperature of the AlGaN/GaN HEMT is estimated from the calibration curve of a passively heated AlGaN/GaN structure. A linear increase of junction temperature is observed when direct current dissipated power is increased. When the power dissipation is 12.75 W at a drain voltage of 15 V, a peak temperature of 69.1°C is observed at the gate edge on the drain side of the central finger. The position of the highest temperature corresponds to the high-field region at the gate edge.     

高温铜氧化物超导体的正常态——赝隙金属态

对高温铜氧化物超导体的正常态,首先回顾了有关其性质的9点重要实验结果.在此基础上,论证双子系统、二维Hamilton量是描写HTS正常态的适宜的出发点.以此Hamilton量采用Kaga退耦合近似的Green函数法经数值计算,得到了随温度而变的态密度中赝隙,与角分辨光电发射实验结果定性一致.理论还表明此Hamilton量具有以d波为主的d+s对称性的超导序参量,这和实验相符.进一步指出,高温铜氧化超导体中的量子电子液体是近Fermi液体,其中退局域化态与近局域化态共存,而近局域载流子在任一有限温度下有一定几率形成近局域载流子对.     

Various Recipes of SiNx Passivated AlGaN/GaN High Electron Mobility Transistors in Correlation with Current Slump

The current slump of different recipes of SiN~ passivated AIGaN/GaN high electron mobility transistors （HEMTs） is investigated. The dc and pulsed current-voltage curves of AIGaN/GaN HEMTs using different recipes are analyzed. It is found that passivation leakage has a strong relationship with NH3 flow in the plasma-enhanced chemical vapor phase deposition process, which has impacted on the current collapse of SiNs passivated devices. We analyze the pulsed IDS -- VDS characteristics of different recipes of SiNx passivation devices for different combinations of gate and drain quiescent biases （VGso, VDSO） of （0, 0）, （-6, 0）, （-6, 15） and （0, 15）V. The possible mechanisms are the traps in SiNxpassivation capturing the electrons and the surface states at the SiNx/AIGaN interface, which can affect the channel of two-dimensional electron gas and cause the current collapse.     

纳米SrAl2O4:Eu2+,Dy3+长余辉发光材料的制备与性能

采用水热-均匀共沉淀法制备了纳米SrAl2O4:Eu2+,Dy3+长余辉发光材料.通过XRD、TEM、荧光光谱、热释光谱对其结构和性能进行分析.XRD结果表明所制备的SrAl2O4:Eu2+Dy3+纳米发光材料为单相,属单斜晶系.TEM测试表明纳米SrAl2O4:Eu2+,Dy3+发光材料为规则的球状粒子,粒径为50～80 nm,且分散性良好.激发和发射光谱测试表明,样品的激发光谱是峰值在356 nm 的连续宽带谱,发射光谱是峰值位于512 nm的宽带谱,与SrAl2O4:Eu2+,Dy3+粗晶材料相比,激发和发射光谱都出现了"蓝移"现象.样品的热释光峰值位于358 K,适合于产生长余辉.     

Studies on Tripolycyanamide Formaldehyde Resin-Pd Complex and Its Use in the Synthesis of the Branch of Paclitaxel

A novel method was developed to prepare the branch of paclitaxel using 2,4-dichlorophenylaldehyde as the starting material.The branch was synthesized through condensation, cydoaddltion and catalyzing hydrogenation of dichlorophenyl intermediate. Tripolycyanamide formaldehyde resin-Pd complex as hydrogenation catalyst has been studied. The influence of temperature and N/Pd atomic ratio of the catalyst on the effect of catalytic hydrogenation was investigated and the optimum conditious were found. Because of the mild cyclization reaction condition, convenient asymmetric resolution operation and high yield, the synthetic route was practical.     

Synthesis and application of diphenylbis (3,5-dimethylpyrazol-1-yl)methane to form η-arene complexes of molybdenum

The neutral nitrogen-bidentate ligand, diphenylbis(3,5-dimethylpyrazol-1-yl)methane, Ph₂CPz′₂, can readily be obtained by the reaction of Ph₂CCl₂ with excess HPz′ in a mixed-solvent system of toluene and triethylamine. It reacts with [Mo(CO)₆] in 1,2-dimethoxyethane to give the η²-arene complex, [Mo(Ph₂CPz′₂)(CO)₃] (1). This η²-ligation appears to stabilize the coordination of Ph₂CPz′ ₂ in forming [Mo(Ph₂CPz′₂)(CO)₂(N₂C₆H₄NO₂-p)][BPh₄] (2) and [Mo(Ph₂CPz′₂)(CO)₂(N₂Ph)] [BF₄] (3) from the reaction of 1 with the appropriate diazonium salt but the stabilization seems not strong enough when [Mo{P(OMe)₃} ₃(CO)₃] is formed from the reaction of 1 with P(OMe)₃. The solid-state structures of 1 and 3 have been determined by X-ray crystallography: 1-CH₂Cl₂, monoclinic, P2₁/n, a = 11.814(3), b = 11.7929(12), c = 19.46 0(6) Å, β = 95.605(24)°, V = 2698.2(11) ų, Z = 4, D_calc = 1.530 g/cm³ , R = 0.044, R_w = 0.036 based on 3218 reflections with I > 2σ(I); 2 (3)-1/2 hexane-1/2 CH₃OH-1/2 H₂O-1 CH₂Cl₂, monoclinic, C2/c, a = 41.766(10), b = 20.518(4), c = 16.784(3) Å, β = 101.871(18)°, V = 14076(5) ų, Z = 8, D_calc = 1.457 g/cm³, R = 0.064, R_w = 0.059 based on 5865 reflections with I > 2σ(I). Two independent cations were found in the asymmetric unit of the crystals of 3. The average distance between the Mo and the two η²-ligated carbon atoms is 2.574 Å in 1 and 2.581 and 2.608 Å in 3. The unfavourable disposition of the η²-phenyl group with respect to the metal centre in 3 and the rigidity of the η²-arene ligation excludes the possibility of any appreciable agostic C---H → Mo interaction.     

电化学阶边精饰法制备钯镍合金纳米线的研究

运用连续恒电势三脉冲的电化学阶边精饰法在高定向石墨(HOPG)上制备钯镍合金纳米线阵列， 并研究了合金成分的影响因素. 结果表明，改变镀液组成可以调整钯镍合金成分，调整生长时间和生长电势来控制钯镍合金纳米线的直径. 用7 mmol•L^-1 PdCl2,3 mmo•L^-1 NiSO₄, 0.2 mol•L^-1 NH₄Cl，pH 8.5的混合溶液，控制脉冲电势-2.0 V形核0.2 s，在脉冲电势－0.4 V生长1 h，可以获得平均直径为200 nm, 长度约400 μm的钯镍合金纳米线阵列, 纳米线的合金成分中镍含量为12.4%(质量分数,w).     

存在光致异构化情况下掺杂液晶非线性增强因子的微观形式

针对偶氮染料掺杂向列型液晶的光学重新取向问题，采用一个与实际光致异构化过程更为接近的染料分子四能级模型，并通过微观分析方法求解四能级速率方程组，得到了与系统分子参数有关的增强因子微观表达式.该表达式说明了偶氮染料掺杂液晶取向光学非线性增强的根源，揭示了在存在光致异构和不存在光致异构两种情况下液晶取向光学非线性增强的内在特点和机理.从四能级模型增强因子出发，通过合并其中某些参数，或使其中某些参数为零，推得了三能级模型下增强因子的形式和入射光波长不处于顺式吸收带内时增强因子的表达式.通过比较分析，说明了用四能级模型解释偶氮染料掺杂向列型液晶非线性增强机理具有优越性.并指出，当入射光波长不处于顺式吸收带时，在快速响应条件下，理论与Marrucci针对蒽醌染料掺杂液晶提出的修正理论具有一致性. 关键词： 四能级模型 偶氮染料掺杂液晶 光学重新取向 光致异构化     

TD-ERCS混沌系统的差分分析

基于差分分析基本原理和混沌系统“迭代”与分组密码“轮”的对应关系，提出了迭代差分分布和差分失效指数的概念，用于评估混沌系统抗差分分析的能力.将混沌系统置于“裸”状态，直接分析混沌系统的迭代差分分布，从而测出差分失效指数.研究混沌系统的安全性，差分失效指数是一个普适的可测的重要的系统特征指数.对TD-ERCS和Logistic混沌系统的测试结果表明，在90%的参数变化范围内，TD-ERCS的差分失效指数等于2(理论上的最小值)，相比之下，Logistic的差分失效指数等于55；推知，TD-ERCS是一种能自动免疫差分分析的混沌系统.     

在替代式无序赝一维导体中Peierls不稳定性和超导电性

本文用CPA方法计算了在赝一维导体中替代式无序对Peierls转变温度(T_p)及超导转变温度(T_c)的影响,讨论了在这些系统中探索具有稍高T_c超导体的有利条件。