NEA GaAs光电阴极激活工艺研究

本文报道了 GaAs 反射式光电阴极的激活工艺过程和结果.通过实验确定了 GaAs表面的热清洁温度,利用钼丝热辐射加热方法达到了比较理想的清洁效果,采用铯分子源和高纯氧作氧源获得了高于1000μA/1m 的激活积分灵敏度.     

可调谐激光晶体S因子和声子能量的估算

本文采用了一种特别的多模电-声子耦合模型,利用室温光谱数据估算可调谐激光晶体的黄昆-里斯(Huang-Rhys)S因子,并与单模耦合模型的结果作了比较.最后,还讨论了S因子与晶场强度及基质晶体价键特性之间的关系.     

右连续上鞅的提升及其应用

本文首先给出了一个右连续上鞅的ＳＤ提升，在引进Ｓ－上鞅和强Ｓ－上鞅概念之后，研究了一一致可积上鞅与Ｓ－上鞅，类上鞅与强Ｓ－上鞅之间的关系，并得到了Ｓ－上鞅与强Ｓ－上鞅的许多性质，作为其直接结果，给出了类上鞅的Ｄｏｏｂ－ＭＮｅｙｅｒ分解。     

Preparation of Cu（In,Ga）Se2 Thin Film Solar Cells by Selenization of Metallic Precursors in an Ar Atmosphere

Cu（In, Ga）Se2 thin films are deposited on Mo-coated glass substrates by Se vapour selenization of sputtered metallic precursors in the atmosphere of Ar gas flow under a pressure of about 10 Pa. The in situ heat treatment of as-grown precursor leads to the formation of a better alloy. During selenization, the growth of CuInSe2 phase preferably proceeds through Se-poor phases as CuSe and InSe at relatively low substrate temperature of 250℃, due to the absence of In2Se3 at intermediate stage at low reactor pressure. Subsequently, the Cu（In,Ga）Se2 phase is produced by the reactive diffusion of CuInSe2 with a Se-poor GaSe phase at high temperature of up to 560℃. The final film exhibits smooth surface and large grain size. The absorber is used to fabricate a glass/Mo/Cu（In, Ga）Se2/CdS/ZnO cell with the total-area efficiency of about 7%. The low open-circuit voltage value of the cell fabricated should result from the nonuniform distribution of In and Ga in the absorber, due to the diffusion-controlled reaction during the phase formation. The films, as well as devices, are characterized.     

GaAs光电阴极片原子级表面清洁方法的研究及评价

本文对GaAs光电阴极片UHV系统中原子级表面清洁方法做了研究,它们是:光加热法、直接加热法、离子轰击加退火法、热子加热法,表面清洁效果用装于UHV系统中间在线俄歇检测,表面质量用Aa/GaAuger峰高进行比较,指出两种用于第三代象增强器光电阴极的表面清洁方法:CS-离子轰击加退火法和热子背加热法。     

测度链上的柯西不等式

研究了测度链上的柯西不等式,给出测度链上柯西不等式的具体形式.此外,还对测度链上的柯西不等式作了推广.     

红外倒焊机的结构和改进

对准倒焊机是制备混合红外焦平面阵列（ＨＩＲＦＰＡ）所必需的设备。ＨＤＤ－１型红外倒焊机是国内第一台自行研制的光机电仪器。叙述了本仪器的原理、特性和在ＨＩＲＦＰＡ中的应用，讨论了该仪器的对准精度，提出了采用自动校准器改进上、下两个焊接面找平的实施方法。     

界面有序单分子层膜结构的红外和拉曼光谱表征

本文综述了近十几年来红外和拉曼光谱方法用于表征空气／水界面单分子层（Ｌａｎｇｍｉｕｒ膜）、油／水界面和空气／固界面单分子层（ＬＢ膜）分子结构的最新进展。