红外InGaAsP光电阴极研究

本文主要对阈值波长可达1.25μm的InGaAsP光电阴极进行了详细的研究。在国内首次实现了在0.5μm～1.25μm波段范围内具有光电响应的半导体光电阴极。用Cs和O₂激活后得到的光电阴极在1.06μm处的反射式光电灵敏度为3.4mA/W,量子效率为0.4%。本文还对激活表面及热清洁工艺进行了系统地分析,确定出了最佳的表面清洁温度及时间。     

GaAs光电阴极热清洗工艺研究

GaAs光电阴极在进行Cs-O激活前．激活层表面必须达到原子级洁净。最常用且最有效的洁净方法是高温热清洗法。然而．在热清洗过程中对处在真空系统中的光电阴极表面温度进行精确测量却是非常困难的。本文采用四极质谱仪对GaAs光电阴极激活前的热清洗过程进行分析．确定了最佳的热清洗温度及热清洗工艺，较好地解决了GaAs光电阴极激活前的热清洗工艺问题。     

新型金阴极及其紫外光电发射特性

采用直流磁控溅射法制备了不同厚度的金纳米薄膜,在高纯氮气气氛、800 ℃条件下快速退火,在石英基底上制备了具有表面微纳颗粒的新型金阴极。应用扫描电子显微镜对阴极的表面形貌进行表征,结果表明:阴极表面形成了均匀分布的金纳米颗粒,平均粒径随金纳米薄膜厚度的增加（5 nm至20 nm）从300 nm增大到800 nm。在190~360 nm紫外光下,对阴极的光电子发射特性进行了研究,结果表明:相对于平面阴极,新型金阴极的光电子发射效率提高了10倍以上,最高可达到平面阴极的16倍,且随颗粒粒径的减小而增大。采用三步光电发射模型对上述结果进行理论分析,表明阴极光电效率的提高主要由于阴极光电发射面积的增加和局域强电场导致的表面势垒降低。     

NEA GaAs光电阴极激活工艺研究

本文报道了 GaAs 反射式光电阴极的激活工艺过程和结果.通过实验确定了 GaAs表面的热清洁温度,利用钼丝热辐射加热方法达到了比较理想的清洁效果,采用铯分子源和高纯氧作氧源获得了高于1000μA/1m 的激活积分灵敏度.     

用于高速摄影变象管的软X射线光电阴极

光阴极由衬底(包括介质阴极的导电基底)和光电发射膜构成。采用了聚丙烯、Formvar和Paylene三种有机薄膜作阴极衬底。建立了这些薄膜的制备技术。用一台自制的软X射线单色仪在277—7469ev光子能量范围内测量了这些薄膜的透过率。 研究了CsI、CsBr、Au和MgF₂四种光电阴极的光电发射特性和光电发射与阴极厚度的关系,找出了最佳阴极厚度。用软X射线单色仪在277—7469ev光子能量范围内测量了最佳厚度阴极的绝对量子效率,四种阴极最大值分别为4.50、2.90、0.25和0.12。我们还在同一阴极衬底上分区制备了四种阴极,在变象管荧光屏上比较其亮度,结果和测量的一致。 用LAB5型表面分析仪对CsI和Au阴极的光电子初能量分布作了测量,CsI阴极光电子初能量分布半高宽远小于Au。因此CsI是适用于高速摄影变象管比较理想的软X射线光电阴极。     

GaAs光电阴极激活时Cs的吸附效率研究

从NEA GaAs光电阴极的激活光电流曲线发现,当系统真空度不很高时,在首次Cs激活阶段,表面掺杂浓度较低的阴极材料,其光电流产生需要的时间也较长.同时,随着系统真空度的提高,这种时间上的差异又变得不再明显.该现象表明,Cs原子在阴极表面的吸附效率同表面层掺杂浓度以及系统真空度之间有直接的联系.为定量分析这种关系,本文根据实验数据建立了Cs在阴极表面吸附效率的数学模型,利用该模型仿真的结果同实验现象非常符合.该研究对进一步开展变掺杂阴极结构设计和制备工艺研究具有重要的价值和意义. 关键词： GaAs光电阴极 吸附效率 真空度 表面掺杂浓度     

用蒸发法制备负电子亲和势光电阴极

用蒸发法制备负电子亲和势光电阴极,探讨了两个可能性:1)改进现有多碱阴极的工艺规范,制备负电子亲和势光电阴极;2)用蒸发法制备Ⅲ-Ⅴ族负电子亲和势光电阴极。     

组件与非组件式热阴极的热特性分析

 利用ANSYS软件研究了组件式热阴极与非组件式热阴极在阴极温度分布和启动时间等特性上的异同，并与实验结果进行对比。结果表明：组件与非组件式结构的阴极表面温度分布都十分均匀,组件式阴极钼筒外表面的温差与热子输入功率成正比；组件式阴极的钼筒外温度、阴极温度高于非组件式的，而热子温度明显低于非组件式的，但非组件式阴极启动更快；非组件式阴极通过增加阴极下表面发射率可以显著升高阴极温度，增加热子发射率可以显著降低热子温度，从而热性能也能达到与组件式阴极相近水准。     

指数掺杂反射式GaAlAs和GaAs光电阴极比较研究

采用指数掺杂技术, 通过金属有机化学气相沉积法外延生长了反射式GaAlAs和GaAs光电阴极, GaAlAs发射层的Al组分设计为0.63. 在超高真空系统中分别对两种阴极进行激活实验, 得到激活后的光谱响应曲线. 利用指数掺杂反射式光电阴极量子效率公式对实验曲线进行拟合并分析了电子漂移扩散长度、后界面复合速率、表面电子逸出几率等性能参数对光电发射性能的影响. 结果表明, 与GaAs光电阴极相比, GaAlAs光电阴极的Al组分虽然在一定程度上不利于光电发射, 但是解决了GaAs光电阴极由于响应波段宽而不能很好地用于窄波段可见光探测领域的问题, 制备出只对蓝绿光响应的反射式GaAlAs光电阴极.     

高速率沉积磁控溅射技术制备Ge点的退火生长研究

采用磁控溅射技术在Si衬底上以350?C沉积14 nm的非晶Ge薄膜,通过退火改变系统生长热能,实现了低维Ge/Si点的生长.利用原子力显微镜(AFM)和拉曼(Raman)光谱所获得的形貌和声子振动信息,对Ge点的形成机理和演变规律进行了研究.实验结果表明:在675?C退火30 min后,非晶Ge薄膜转变为密度高达8.5×109cm-2的Ge点.通过Ostwald熟化理论、表面扩散模型和对激活能的计算,很好地解释了退火过程中,Ge原子在Si表面迁移、最终形成纳米点的行为.研究结果表明用高速沉积磁控溅射配合热退火制备Ge/Si纳米点的方法,可为自组织量子点生长实验提供一定的理论支撑.     

GaAs光电阴极制备工艺的俄歇分析

我们在一台制作第三代象增强器的超高真空系统中安装了俄歇(Auger)能谱仪,以其对GaAs光电阴极的制备过程进行在线监测分析,其中包括选择性腐蚀过程的俄歇观测,阴极激活前清洁措施的效果评价和Cs-O激活过程中As/Ga俄歇信号比对光电灵敏度的影响,Cs源纯度的分析及对光电发射的影响。根据分析结果,激活出了1000μA/lm的反射式光电阴极和500μA/lm的透射式光电阴极。     

Combined RHEED-AES study of the thermal treatment of (001) GaAs surface prior to MBE growth

Auger analysis and reflection high energy electron diffraction (RHEED) have been used to study the UHV thermal cleaning procedure of different chemically treated (001) GaAs surfaces when heated in ultra high vacuum. It is shown that the ultimate surface composition of the substrate critically depends on the nature and the thickness of the oxide layer formed during chemical treatment. The oxygen removal mechanism has been studied and a comparative analysis of AES and RHEED observations has been drawn. A low residual carbon coverage cleaning procedure is fully investigated and it results that a carbon coverage as low as ∼6×10⁻² monolayer induces surface faceting by heating the GaAs substrate at temperatures higher than 570°C. A (001) GaAs surface heated in an arsenic flux up to 570°C is As-stabilized and (411) facets appear at a temperature ranged between 575 and 585°C.     

Electronic properties of the polar GaAs(111)As surface

Photoemission yield spectroscopy (PYS) has been used to investigate the electronic properties of the polar GaAs(111)As surface cleaned by ion bombardment with subsequent annealing at 770 K under UHV conditions of about 10⁻⁷ Pa. The elemental composition was recorded simultaneously by means of Auger electron spectroscopy (AES). After the above described cleaning procedure As has been completely removed from the first surface monolayer which corresponds to the (1×1) atomic surface structure whereas the values of the work function ø and absolute band bending were 4.00±0.02 and −0.16±0.06 eV respectively. Moreover two filled electronic surface state bands were observed which have been described as the Ga-derived surface state band and As-derived “back-bond” surface state band respectively.     

Oxidation and annealing of GaP and GaAs (111)-faces studied by AES and UPS

The annealing behaviour after argon sputtering and the first steps of oxidation of the polar GaP and GaAs (111)-faces are studied by AES and UPS. The Auger spectrum of GaP is briefly discussed. In contrast to GaAs, the GaP surfaces show a gallium accumulation after argon sputtering, but they become stoichiometric by annealing. The photoemission spectra show an additional emission due to oxygen with its maximum at about 5 eV below the valence band edge. The decrease of the emission near the valence band edge by oxidation shows the existence of surface sensitive states. Comparing the results of the two polar faces and for different surface compositions, it is concluded that these states are mainly As- and P-derived, respectively. A linear relationship is found between the UPS and Auger signal of oxygen.     

Surface structure of MgO(001) surface studied by LEED

MgO(001) surfaces prepared by three different heat treatments were studied by LEED. The first was the surface just after the vacuum cleavage; the second was that after the annealing of the first one at 300°C in UHV. The third was prepared by cleaving in air and heating in oxygen until the carbon Auger peak disappear. LEED I-V curves of the diffraction spots, (10), (11) and (20), were recorded and compared carefully. No remarkable difference corresponding to the preparing methods was found. Therefore, the atomic structures of the surfaces seem to be similar to each other. These experimental I-V curves were compared with the theoretical curves obtained by dynamical calculations for several grades of surface relaxation. The theoretical curves with no relaxation or with the smallest one in the calculation (2.5% expand) fitted best with the experimental curves. The experimental curves were also compared with the theoretical ones calculated for the rumpled surface. But no effect induced by the rumpling was found in the experimental curves.     

离子注入GaAs的脉冲激光退火

利用沟道背散射、俄歇和X射线光电子能谱技术研究了Nd:YAG和红宝石脉冲激光退火的离子注入GaAs样品的表面性质。结果表明,对于这两种激光都存在一个从无定形向单晶转化的阈值能量,在阈值能量附近,没有明显的表面分解。高能量密度可引起明显的分解和损伤。利用热流理论计算了杂质的再分布。对于两种激光都得到了Te在GaAs中较高的替位率。 关键词：     

Surface segregation in HAYNES 230 alloy

The surface segregation in the Ni-based alloy HAYNES 230 was studied by Auger Electron Spectroscopy and X-ray Photoelectron Spectroscopy between 400 and 1100 °C. The qualitative variations of the surface contents of S, P, W, Mo, N, Si, and Mn were determined as a function of annealing temperature and time. It was found that at 925 °C the maximum coverage of sulphur at the alloy surface is in the range 0.06-0.15 monolayers. Chromium evaporation from the HAYNES 230 surface under UHV conditions is clearly evidenced for annealing at 1100 °C.     

Removal of oxide films from silicon surfaces in a high vacuum system: an in situ ellipsometric study

The dynamics of several surface cleaning processes for silicon were investigated in a UHV environment using an in situ ellipsometric technique. Low energy argon ion bombardment followed by annealing, and thermal treatments alone were studied. We show that the only reliable procedure that provides a surface that is both oxide free and optically flat involves flashing the sample above 1200°C.     

Structure and composition of gallium nitride films produced by processing gallium arsenide single crystals in atomic nitrogen

Thin GaN films are grown on (001) single-crystal GaAs substrates processed in an atmosphere of active nitrogen radicals. Auger electron spectroscopy is applied to take the depth profiles of the basic chemical elements that enter into the composition of the epitaxial GaN films and single-crystal GaAs substrates. It is found that the surface composition of the GaN films is characterized by considerable nonstoichiometry (the excess nitrogen achieves ≈9%), which is caused by the presence of atomic nitrogen in the discharge chamber. With a high-resolution X-ray diffraction method, the structural perfection of the epitaxial layers is investigated. It is shown that low-temperature annealing (at temperatures below 700°C) is responsible for the formation of cubic GaN films on the (001) surface of cubic GaAs, whereas higher temperature annealing results in the growth of the hexagonal films.     

Structural characterization of MgO(100) surfaces

The structure, the microtopography and the cleanliness of MgO(100) surfaces have been investigated by a combination of thermal helium scattering, surface decoration and Auger spectroscopy. The microstructure and cleanliness are strongly dependent on the preparation of the surface. MgO surfaces obtained by cleavage under UHV are clean and present a high coefficient for coherent He reflection. MgO surfaces prepared by cleavage in air are contaminated and irreversibly damaged by water vapour. Such surfaces can be cleaned by vacuum annealing but the coefficient of coherent He reflection remains low because of the presence of a high number of defects.