| GaAs光电阴极片原子级表面清洁方法的研究及评价 |
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| 引用本文： | 孙长印,张书明.GaAs光电阴极片原子级表面清洁方法的研究及评价[J].光子学报,1996,25(10):889-892. |
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| 作者姓名： | 孙长印 张书明 |
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| 作者单位： | 中国科学院西安光学精密机械研究所 |
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| 摘 要： | 本文对GaAs光电阴极片UHV系统中原子级表面清洁方法做了研究,它们是:光加热法、直接加热法、离子轰击加退火法、热子加热法,表面清洁效果用装于UHV系统中间在线俄歇检测,表面质量用Aa/GaAuger峰高进行比较,指出两种用于第三代象增强器光电阴极的表面清洁方法:CS-离子轰击加退火法和热子背加热法。
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| 关 键 词： | 原子级清洁 光加热 直接加热 离子轰击 热子 |
| 收稿时间： | 1995-10-17 |
STUDIES AND EVALUATION ON METHODS TO OBTAIN ATOMICALLY CLEAN SURFACE OF GaAs PHOTOCATHODE |
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| Sun Changyin,Zhang Shuming,Ma Xiuling,Hou Xun.STUDIES AND EVALUATION ON METHODS TO OBTAIN ATOMICALLY CLEAN SURFACE OF GaAs PHOTOCATHODE[J].Acta Photonica Sinica,1996,25(10):889-892. |
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| Authors: | Sun Changyin Zhang Shuming Ma Xiuling Hou Xun |
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| Institution: | Xi’an Institute of Optics & Precision Mechnics, Academia, Sinica, 710068 |
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| Abstract: | We have studied four kinds of cleaning methods for obtaining atomically clean surfaces of CaAs cathde in UHV system.The methods includes:photo heating,GaAs resistance heating,ion bombarding and annealing,heater back heating. The cleaning effect is analyzed by surface Auger spectoscope in situ the UHV system surface quality is measured by As/ Ga Auger spectrum peak ratio. Experiment results show that Cs bombarding and annealing method and heater back heating aresuitable for the fabrication of the GaAs cathode in the third generation intensifier. |
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| Keywords: | Atomically clean Photo heating Resistance heating Ion bombard Heater |
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