金属基上以YSZ为过渡层的YBCO薄膜的微观结构

采用透射电子显微术（ＴＥＭ），研究了用磁控溅射技术在柔性金属基体上制备的、钇稳定的ＺｒＯ２（ＹＳＺ）为过镀层的ＹＢａ２Ｃｕ３Ｏ７－ｙ（ＹＢＣＯ）薄膜的横断面结构。所得ＹＢＣＯ膜的超导临界转变温度Ｔｃ为９１Ｋ，临界电流密度Ｊｃ＝２×１０３Ａ／ｃｍ２（７７Ｋ，０Ｔ）。基体为Ｎｉ基合金（ＨａｓｔｅｌｏｙＣ）。ＹＳＺ层为致密、均匀的细晶组织，约１２μｍ厚，具有织构取向，并与基体紧密连接。ＹＢＣＯ层的厚度不均匀，约５００ｎｍ；ＹＢＣＯ／ＹＳＺ界面有时连接较差，在该界面上有杂质出现，杂质有可能引发裂纹。     

Tl系超导薄膜金属涂层的生长与特性研究

我们研究了Tl-2212超导薄膜在带有YSZ/CeO2缓冲层和带有CeO2/YSZ/CeO2缓冲层的Ni金属RABiTS基带上的生长情况.基带上的缓冲层是采用PLD方法制备的,Tl-2212薄膜的制备采用了磁控溅射和后热处理两步方法.XRD 实验结果表明,Tl-2212薄膜都具有很好的C轴垂直于膜面的织构,并具有双向外延生长特性.在CeO2/YSZ/CeO2/Ni基带上制作的Tl-2212薄膜的Tc达到102.8 K,Jc(77 K,0 T)达到2.6 MA/cm2;在YSZ/CeO2/Ni基带上薄膜Tc可达97.7 K,Jc(77 K,0 T)也可以达到0.45 MA/cm2.     

Y2O3稳定ZrO2薄膜的结构和光学特性

用电子束蒸发法制备出四种不同Y2O3含量的Y2O3稳定ZrO2（YSZ）薄膜,用X射线衍射和透射光谱测定薄膜的结构和光学性能.结果表明：随着Y2O3含量的增加,ZrO2薄膜从单斜相向高温相（四方相和立方相）转变,获得了结构稳定的YSZ薄膜；YSZ薄膜的晶粒尺寸都比ZrO2薄膜的大,但随着Y2O3加入量的增加,晶粒尺寸有减小的趋势,薄膜表面也趋向光滑平整.所有YSZ薄膜的透射谱线都与ZrO2薄膜相似,在可见光和红外光区都有较高的透过率.Y2O3的加入还可以改变薄膜的折射率,在一定范围内可得到所需的任意折射率.     

Crystal growth,structure and optical properties of Pr~(3+) -doped yttria-stabilized zirconia single crystals

The development of blue semiconductor light-emitting diodes(LEDs) has produced potential applications for Prdoped materials that can absorb blue light, especially crystals, and we now report structure and optical properties for high-quality Pr-doped single crystals of yttria-stabilized zirconia(YSZ) grown by the optical floating zone(FZ) method.X-ray diffraction(XRD) and Raman spectroscopy showed that all of the single crystal samples were in the cubic phase,whereas the corresponding ceramic samples contained a mixture of monoclinic and cubic phases. X-ray photoelectron spectroscopy(XPS) and electron paramagnetic resonance(EPR) spectroscopy showed that Pr was present as the Pr~(3+) ion in ceramic rods and single crystals after heating to high temperatures. The absorption and photoluminescence excitation(PLE) spectra of the Pr-doped YSZ crystals measured at room temperature showed strong absorption of blue light, while their photoluminescence(PL) spectra showed five emission peaks at 565 nm, 588 nm, 614 nm, 638 nm, and 716 nm under450 nm excitation. The optimum luminescence properties were obtained with the crystal prepared using 0.15 mol% Pr_6O_(11),and those with higher concentrations showed evidence of quenching of the luminescence properties. In addition, the color purity of Pr-doped YSZ single crystal reached 98.9% in the orange–red region.     

Microscopic observation of laser glazed yttria-stabilized zirconia coatings

Thermal barrier coatings (TBCs) are frequently used as insulation system for hot components in gas-turbine, combustors and power plant industries. The corrosive gases which come from combustion of low grade fuels can penetrate into the TBCs and reach the metallic components and bond coat and cause hot corrosion and erosion damage. Glazing the top coat by laser beam is advanced approach to seal TBCs surface. The laser beam has the advantage of forming a dense thin layer composed of micrograins. Plasma-sprayed yttria-stabilized zirconia (YSZ) coating was glazed with Nd-YAG laser at different operating conditions. The surface morphologies, before and after laser treatment, were investigated by scanning electron microscopy. Laser beam assisted the densification of the surface by remelting a thin layer of the exposed surface. The laser glazing converted the rough surface of TBCs into smooth micron-size grains with size of 2-9 μm and narrow grain boundaries. The glazed surfaces showed higher Vickers hardness compared to as-sprayed coatings. The results revealed that the hardness increases as the grain size decreases.     

Epitaxial growth of YSZ buffer layer for YBa2Cu3O7−δ coated conductor by reel-to-reel pulsed laser deposition

Yttria-stabilized zirconia (YSZ) buffer layers were deposited on CeO₂ buffered biaxially textured Ni-W substrate by reel-to-reel pulsed laser deposition (PLD) for the application of YBa₂Cu₃O_7−δ (YBCO) coated conductor and the influence of substrate temperature and laser energy on their crystallinity and microstructure were studied. YSZ thin films were prepared with substrate temperature ranging from 600 to 800 °C and laser energy ranging from 120 to 350 mJ. X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to investigate how thin film structure and surface morphology depend on these parameters. It was found that the YSZ films grown at substrate temperature below 600 °C or laser energy above 300 mJ showed amorphous phase, the (0 0 1) preferred orientation and the crystallinity of the YSZ films were improved with increasing the temperature, but the surface roughness increased simultaneously, the SEM images of YSZ films on CeO₂/NiW tapes showed surface morphologies without micro-cracks. Based on these results, we developed the epitaxial PLD-YSZ buffer layer process at the tape transfer speed of 3-4 m/h by the reel-to-reel system for 100 m class long YBCO tapes.     

Preparation of Ni–YSZ thin and thick films on metallic interconnects as cell supports. Applications as anode for SOFC

In this work, we propose the preparation of a duplex anodic layer composed of both a thin (100 nm) and a thick film (10 μm) with Ni–YSZ material. The support of this anode is a metallic substrate, which is the interconnect of the SOFC unit cell. The metallic support limits the temperature of thermal treatment at 800 °C to keep a good interconnect mechanical behaviour and to reduce corrosion. We have chosen to elaborate anodic coatings by sol–gel route coupled with dip-coating process, which are low cost techniques and allow working with moderate temperatures. Thin films are obtained by dipping interconnect substrate into a sol, and thick films into an optimized slurry. After thermal treatment at only 800 °C, anodic coatings are adherent and homogeneous. Thin films have compact microstructures that confer ceramic protective barrier on metal surface. Further coatings of 10 μm thick are porous and constitute the active anodic material.     

High‐Temperature Stable Zirconia Particles Doped with Yttrium,Lanthanum, and Gadolinium

Zirconia microspheres synthesized by a wet‐chemical sol–gel process are promising building blocks for various photonic applications considered for heat management and energy systems, including highly efficient reflective thermal barrier coatings and absorbers/emitters used in thermophotovoltaic systems. As previously shown, pure zirconia microparticles deteriorate at working temperatures of ≥1000 °C. While the addition of yttrium as a dopant has been shown to improve their phase stability, pronounced grain growth at temperatures of ≥1000 °C compromises the photonic structure of the assembled microspheres. Here, a new approach for the fabrication of highly stable ceramic microparticles by doping with lanthanum, gadolinium, and a combination of those with yttrium is introduced. The morphological changes of the particles are monitored by scanning electron microscopy, ex situ X‐ray diffraction (XRD), and in situ high‐energy XRD as a function of dopant concentration up to 1500 °C. While the addition of lanthanum or gadolinium has a strong grain growth attenuating effect, it alone is insufficient to avoid a destructive tetragonal‐to‐monoclinic phase transformation occurring after heating to >850 °C. However, combining lanthanum or gadolinium with yttrium leads to particles with both efficient phase stabilization and attenuated grain growth. Thus, ceramic microspheres are yielded that remain extremely stable after heating to 1200 °C.     

On the behavior of a dense indium oxide/yttria-stabilized zirconia electrode

The electrical, structural and electrochemical properties of a dense In₂O₃ layer in contact with a single crystal YSZ electrolyte were studied. As a result of dc and ac investigations, it was found that under anodic polarization the rate of Faraday reaction at the surface of the In₂O₃ electrode is as low as in an ionically blocked electrode. Under cathodic polarization, however, the electrochemical activity of the electrode improves depending on the magnitude of the polarization voltage. Likewise, the electrode polarization resistance decreases after platinum or praseodymium oxide having been deposited on the surface of the In₂O₃ layer. The possible mechanism responsible for such a peculiar behaviour and the limiting step of the electrode reactions are discussed.     

采用EPR谱和TEM对YSZ单晶辐照损伤的研究

 利用电子顺磁共振(EPR)谱和透射电子显微镜(TEM)研究了YSZ单晶的辐照效应。200 keV的Xe和400 keV的Cs离子注入［111］取向的YSZ单晶中,注量均为5×10¹⁶ cm^-2。EPR结果表明辐照产生了共振吸收位置g‖=1.989 和 g⊥=1.869、对称轴为［111］的六配位Zr³⁺顺磁缺陷。Cs辐照产生了比Xe 离子辐照多约150倍的六配位Zr³⁺顺磁缺陷。两种样品的剖面电子显微分析表明没有发现非晶化转变,但是Cs离子辐照的样品在损伤集中区域产生了密度较高的缺陷。因此,EPR谱和电子显微观察均说明在相同离位损伤(约160 dpa)的情况下,Cs离子辐照比Xe 离子辐照产生了更多的缺陷。造成这一现象的原因是Cs离子是化学活性的而Xe 离子却是惰性的。