紫外光解法在制备低介电常数氧化硅分子筛薄膜中的应用

以正硅酸乙酯为硅源, 四丙基氢氧化铵(TPAOH)为模板剂和碱源, 采取水热晶化技术, 通过原位法在硅晶片表面制备出纯二氧化硅透明分子筛薄膜; 采用紫外光解法代替传统高温焙烧法脱除分子筛薄膜孔道内的模板剂, 制备出具有低介电常数的氧化硅分子筛薄膜. 使用FTIR、XRD和SEM对样品进行了结构表征, 并采用阻抗分析仪测量了薄膜的介电常数, 纳米硬度计测量薄膜的杨氏模量和硬度. 与传统的高温焙烧方法相比, 紫外光解法处理条件温和, 同时省时、省能、操作简易.     

强度调制光电流谱研究纳晶薄膜电极过程

用强度调制光电流谱研究半导体纳晶薄膜电极光生电荷的界面转移和输运动力学过程.从测量不同外加电压和不同硫化钠溶液浓度下CdSe纳晶薄膜电极的光电流响应得到了参数:归一化稳态光电流和表面态寿命,分析界面空穴的直接转移和通过表面态的间接转移过程.通过测量不同背景光强下TiO2纳晶薄膜电极的电子扩散系数研究电子输运过程.应用HCl化学处理方法明显增大了电子扩散系数,改善了电子在TiO2纳晶薄膜电极中的输运性能.     

Cu(In,Ga)Se_2薄膜组成表面分析准确测量国际关键比对

中国计量科学研究院参加了国际关键比对K129,采用X射线光电子能谱仪(XPS)建立了测量薄膜太阳能电池材料铜铟镓硒(CIGS)薄膜组成和深度成分分布的有效方法。采用合适的条件,对CIGS薄膜进行深度剖析,提出并完善了一套XPS深度剖析数据处理方法(全计数法和相对灵敏度因子法),对薄膜组成进行了准确测量。结果表明,该方法的测量重复性良好,5次测量的相对标准偏差(RSD)均小于2%,测量扩展不确定度优于4%,与其他国家计量院的结果取得等效一致。对比研究了不同灵敏度因子来源(由参考样品获得、仪器数据库的3种来源)对CIGS薄膜组成测量结果的影响,结果表明,仪器厂商数据库自修正的灵敏度因子最接近于参考样品,可较好地对CIGS薄膜进行原子含量测量。该方法可推广用于表面分析设备深度剖析薄膜样品时定量计算薄膜成分,提高测量薄膜成分的准确度,为薄膜太阳能电池材料研发和产业化提供参考依据。     

双层铜金属薄膜纳米压痕机械性能的分子动力学模拟

多层金属薄膜的机械性质在纳米组件的设计上是非常重要的.目前,纳米尺度材料的机械性质测量的最主要方法为纳米压痕检测技术.本文应用分子动力学理论对双层铜金属薄膜界面的结构形态与特性进行分析探讨.选用FCC结构单晶铜的(100)面,(110)面和双层铜金属薄膜作为探讨界面性质的材料,进而探讨了单晶铜及双层铜金属薄膜的纳米压痕变形性质.     

掺杂Nd对GdFeCo薄膜的磁光性能的影响

制备了三元GdFeCo合金薄膜和四元NdGdFeCo合金薄膜,测量了其磁饱和磁化强度对温度的依赖关系、磁滞回线以及可见光范围内的克尔谱.研究了轻稀土Nd掺杂对GdFeCo磁光薄膜的克尔旋转角的影响,发现在一定掺杂范围内能够有效提高薄膜在短波长下的克尔旋转角.掺入适量的轻稀土Nd可以使GdFeCo薄膜在短波长下的磁光性能提高,更好的适用于作为中心孔探测磁超分辨的短波长磁光读出层材料.     

纳米铜薄膜氧化反应动力学规律研究

研究了140 ℃下纳米尺度Cu薄膜的氧化行为. 采用真空蒸发法以不同沉积速率制备一系列Cu薄膜, 利用原子力显微镜(AFM)观察其微观形貌, 选取形貌良好的Cu薄膜样品. 采用方块电阻和透射光谱两种方法为表征手段, 测量16～22 nm范围内不同厚度Cu薄膜在140 ℃下完全氧化所需要的时间, 得到了Cu薄膜氧化反应的动力学曲线, 并利用X射线衍射(XRD)分析了氧化产物的晶相结构和成分. 结果表明, 纳米尺度下Cu薄膜在140 ℃下氧化反应的动力学表征结果满足特殊的反对数生长规律, 反应产物为Cu₂O.     

“电极/溶液”界面的椭圆偏振测量技术研究进展

椭圆偏振测量技术是通过解析偏振光束在界面上或薄膜中反射或透射时偏振状态的变化,获取界面或薄膜的厚度、复折射率等性质的一种光学方法,是一种高灵敏度、非破坏性的原位实时表征技术,被广泛应用于“电极/溶液”界面的研究. 本文简要介绍了椭圆偏振测量技术的基本原理及其最新发展,并着重评述了能源电化学、材料电化学、电分析与生物电化学等领域中,应用椭圆偏振测量技术研究“电极/溶液”界面的现状.     

石墨烯氧化物薄膜电极的光电化学特性

采用浸渍-提拉法制备了一系列石墨烯氧化物(GO)薄膜,并通过X射线衍射(XRD),扫描电镜(SEM),傅里叶变换红外光谱,紫外-可见吸收光谱和光电化学测量等技术对样品进行了表征.在GO电极上观察到阴极光电流,且光电流密度受薄膜的厚度影响.GO薄膜电极厚度为27nm时,光电流密度为0.25μA·cm-2.此外,GO电极的光电响应还受紫外光照影响,随着紫外光照时间的延长,阴极光电流逐渐减小.该工作提供了简便的通过控制薄膜厚度或紫外光照时间来控制GO薄膜半导体光电化学性能的方法.     

射频磁控溅射制备纳米TiO2薄膜的光电化学行为

在室温下采用射频磁控溅射法制备了纳米晶粒的TiO2薄膜,用循环伏安法研究了ITO/TiO2薄膜电极的光电化学行为,并测量了相应TiO2薄膜的亲水性与光催化能力.结果表明,在室温下制备的TiO2薄膜为无定形结构,当退火温度超过400 ℃时转化为锐钛矿结构.在400 ℃下退火的TiO2薄膜具有良好的亲水性和光催化能力. TiO2薄膜电极用254 nm的紫外光照射一定时间后会产生新的氧化峰,且随着光照时间的增加,峰电流也增加.初步认为用紫外光照射一定时间后, TiO2薄膜的循环伏安图的氧化峰属于光生的Ti3＋,而光致亲水性可能与Ti3＋的生成有关.     

金核银壳纳米粒子薄膜的制备及SERS活性研究

采用柠檬酸化学还原法制备金溶胶, 通过自组装技术在石英片表面制备金纳米粒子薄膜, 在银增强剂混合溶液中反应获得金核银壳纳米粒子薄膜. 用紫外-可见吸收光谱仪和原子力显微镜(AFM)研究了不同条件下制备的金核银壳纳米粒子薄膜的光谱特性和表面形貌, 并以结晶紫为探针分子测量了金核银壳纳米粒子薄膜的表面增强拉曼光谱(SERS). 结果表明, 金纳米粒子薄膜的分布、银增强剂反应时间的长短对金核银壳纳米粒子薄膜的形成均有重要影响. 制备过程中, 可以通过控制反应条件获得一定粒径的、具有良好表面增强拉曼散射活性的金核银壳纳米粒子薄膜.     

Phase separation in potassium-doped ZnPc thin films

In this study synchrotron radiation was used to investigate the electronic properties of a thin film of zinc-phthalocyanine (ZnPc) deposited on Si(001)-2x1 and progressively doped with K atoms. The molecular orientation was probed by angular-dependent x-ray absorption spectroscopy and the molecules were found to lie with the macrocycle plane roughly perpendicular to the surface. The evolution of the electronic properties of the film was then followed by measuring the photoemission spectra upon in situ evaporation of K atoms on the pristine ZnPc film. The results show that doping proceeds through charge donation from the K atoms to the molecular units whose lowest unoccupied molecular orbital (LUMO) becomes progressively filled. Despite the fact that the LUMO spectral weight increases as the stoichiometry x in the K(x)ZnPc compound varies from about 1 to 4 (as determined by core level photoemission), no detectable density of states was observed at the Fermi level, showing that the film remains insulating for all the investigated stoichiometries. On the other hand the C 1s spectra, which appear merely broadened at the earliest stages of doping (x approximately 1), clearly develop two distinct components when x exceeds 2, suggesting that the charge state is not the same for all the molecules. At the same time, the modification of the valence band points towards the coexistence of two distinct phases with x=2 and x=4.     

Voltammetric and amperometric determination of ascorbic acid at a chemically modified carbon fibre microelectrode

A carbon fibre microelectrode was modified by electrodeposition of a thin copper-heptacyanonitrosylferrate (CuHNF) film on its surface. The film showed the ability to catalyse electrochemical oxidation of ascorbic acid. The catalytic reaction was limited either by diffusion, or by the electrochemical reaction of the catalyst. A linear, cyclic voltammetric response for ascorbic acid was obtained between 5.0 x 10(-5) and 6.0 x 10(-3)M. By amperometric measurements the linear range could be extended to 8.0 x 10(-6)-2.0 x 10(-3)M. The modified electrode showed good stability and reproducibility.     

Facile formation of water-insoluble cyclodextrin/Nafion composite films on solid surfaces

The water-insoluble poly-beta-cyclodextrin (poly-CD)/Nafion composite film was easily prepared by casting a mixed solution of poly-CD and Nafion onto substrate plates. FT-IR measurements showed that the 50/50 wt% poly-CD/Nafion composite film remained stable on the glass and quartz substrates after immersion in water for more than 3 h, while a pure poly-CD film was almost completely dissolved by immersion within 1 h. The film stability was also evaluated from the amount of p-nitrophenol (p-NP) inclusion in the film, which was determined from the decrease in UV-vis absorbance of the p-NP solution into which the film was immersed. The composition dependence of the inclusion amount showed that the film was stable up to 50 wt% CD, but became less stable with further increase in the CD concentration in the film. From the isotherms for the inclusion of p-NP and 1-naphthoate (1-Naph) into the film, the inclusion (stability) constants were determined to be 3.7x10(3) M(-1) and 1.9x10(2) M(-1), respectively. These results show that the selective inclusion of CD is retained after preparation of the composite film.     

Fabrication of ultrathin films with large third-order nonlinear optical properties.

An ultrathin composite film containing anionic Ag-His complexes (His: L-Histidine) and oppositely charged BH-PPV was fabricated by means of the electrostatic layer-by-layer self-assembly technique. UV/Vis spectra showed a continuous deposition process of Ag-His complexes and BH-PPV. The film structure was characterized by using small-angle X-ray diffraction, AFM, and SEM. The nonlinear optical properties of the ultrathin film were studied by using the Z-scan technique with a laser duration of 8 ns at a wavelength of 532 nm. The film sample exhibited a strong nonlinear saturated absorption, with an alpha2 value of -3.9 x 10(-5) mW(-1) and a self-defocusing effect with an n2 value of -4.78 x 10 (-12) m2W(-1).     

Quantitative analysis of trace bulk oxygen in silicon wafers using an inert gas fusion method.

This paper describes a method for removing oxide film from the surface of silicon wafers using an inert gas fusion impulse furnace and precise determination of bulk oxygen within the wafer. A silicon wafer was cut to about 0.35 g (6 x 13 x 2 mm) and dropped into a graphite crucible. The sample was then heated for 40 s at 1300 degrees C. The wafer's oxide film was reduced by carbon and removed as carbon monoxide. The treated silicon sample was taken out of the graphite crucible and maintained again with the holder of the oxygen analyzer. The graphite crucible was then heated to 2100 degrees C. The treated silicon sample was dropped into the heated graphite crucible and the trace bulk oxygen in the wafer was measured using the inert gas fusion infrared absorption method. The relative standard deviations of the oxygen in silicon wafer samples with the removed surface oxide film were determined to be 0.8% for 9.8 x 10(17) atoms/cm3, and 2.7% for 13.0 x 10(17) atoms/cm3.     

Selective Ni-P electroless plating on photopatterned cationic adsorption films influenced by alkyl chain lengths of polyelectrolyte adsorbates and additive surfactants

We demonstrated that the photopatterned single-layer adsorption film of poly(1-dodecyl-4-pyridinium bromide) on a silica surface was available for a template of nickel-phosphorus (Ni-P) electroless plating through sensitization with a SnCl(2) aqueous solution and activation with a PdCl(2) aqueous solution. Four kinds of poly(1-alkyl-4-vinylpyridinium halide)s bearing methyl, propyl, hexyl, and dodecyl groups were prepared. The cationic polymers were adsorbed by a negatively charged silica surface from their solutions, to form single-layer adsorption films exhibiting desorption-resistance toward deionized water and ethanol. The organic adsorption films could be decomposed completely by exposure to 172 nm deep-UV light. The formation and decomposition of the single-layer films were confirmed by deep-UV absorption spectral measurement and zeta-potential measurement. Ni-P electroless plating was carried out on the photopatterned adsorption films, using three types of SnO(x) colloidal materials without and with cationic or anionic surfactant as catalyst precursors in the sensitization step. In the case of the negatively charged SnO(x) colloids surrounded by anionic surfactant, Ni-deposition took place preferentially on the cationic adsorption films remaining in unexposed regions. The Ni-deposition was accelerated significantly on the cationic adsorption film bearing dodecyl groups. It was obvious by ICP-AES analyses that the hydrophobic long-chain dodecyl groups in the adsorption film could promote the adsorption of the negative SnO(x) colloids on the film surface, followed by much nucleus formation of zerovalent Pd catalysts useful for the electroless plating. The result of our experiment clearly showed that, in addition to electrostatic interaction, van der Waals interaction generating between the hydrophobic long-chain hydrocarbons of the adsorption film and the surfactant improved significantly the adsorption stability of the SnO(x) colloids, resulting in highly selective Ni-deposition in accord with the photopattern shape of the cationic single-layer adsorption film.     

Fabrication of polymer Langmuir-Blodgett films containing regioregular poly(3-hexylthiophene) for application to field-effect transistor

Semiconducting thin films consisting of regioregular poly(3-hexylthiophene) (RR-PHT) and poly(N-dodecylacrylamide) (pDDA) were constructed by the Langmuir-Blodgett (LB) technique. A mixture of RR-PHT and pDDA spread from a chloroform solution on a water surface forms a stable monolayer, which can be transferred onto solid substrates by the LB method, yielding a well-defined polymer LB film. Surface morphology studies of the LB film indicate that the RR-PHT is dispersed uniformly throughout the surface. The polymer thin film was chemically doped by contacting with FeCl3 acetonitrile solution, and a conductivity of 5.6 S/cm was achieved. Further, the LB film was utilized as the semiconducting film in the field-effect transistor (FET), and mobilities of 2.2 x 10(-4) and 4.4 x 10(-4) cm2 V(-1) s(-1) were obtained by analyzing the saturated and linear regions of the current-voltage characteristic, respectively.     

Third-order nonlinear optical properties of an ultrathin film containing a porphyrin derivative

An ultrathin nanoscopic multilayer film has been fabricated through the electrostatic layer-by-layer self-assembly of negatively charged 5,10,15,20-tetrakis(3,4,5-trihydroxyphenyl)porphyrin (DHP) and oppositely charged polyethylenimine (PEI). UV-vis spectra showed a continuous and uniform deposition process of PEI and DHP. The film structure was characterized by small-angle X-ray diffraction measurement and AFM images. The nonlinear optical properties of ultrathin film were studied by Z-scan technique with laser duration of 8 ns at a wavelength of 532 nm. The film sample exhibited strong nonlinear saturated absorption and a self-defocusing effect. The nonlinear absorption coefficient and refractive index of the self-assembly ultrathin film are -9.7 x 10(-5) m/W and -7.56 x 10(-12) m(2)/W, respectively.     

铅锡合金在硫酸溶液中生长阳极Pb(Ⅱ)氧化物膜的机理

用交流阻抗、开路电位衰退及线性电位扫描等方法在0.9V(vs.Hg/Hg₂SO₄)和4.5mol/LH₂SO₄溶液中,研究了铅及Pb-Sn合金电极上所生长的阳极氧化物膜.实验结果表明,阳极膜由溶解-沉淀机理控制生长,膜中微粒间为液膜,借助液膜作为离子通道可使膜中微粒发生阳极反应,锡有利于膜中PbO微粒表层阳极氧化为PbO^1+x(0相似文献   

Analysis and regulation of unusual adsorption of phthalocyanine zinc(II) into a Nafion film as investigated by UV-vis spectroscopic techniques

Phthalocyanine zinc(II) (ZnPc) was found to be adsorbed well into a Nafion (Nf) film. The kinetic analysis suggested that the adsorption of ZnPc into the Nf film is controlled by its diffusion in the Nf film with a diffusion coefficient of D = 1.9 x 10(-6) cm(2) s(-1) that is higher than those (10(-9)-10(-12) cm(2) s(-1)) of cationic redox molecules in the Nf film by 3-6 orders of magnitude. The adsorption isothermal was analyzed by a Brunauer-Emmett-Teller (BET) equation suggesting multilayer adsorption of ZnPc into the film. The BET analysis provided the amount of ZnPc for monolayer adsorption (w(m) = 1.50 x 10(-7) mol cm(-2)), from which the effective area for the ZnPc adsorption was estimated to be larger by a factor of 1.7 x 10(3) than the Nf film area (1.0 cm(2)). The absorption spectra of a Nf film adsorbing ZnPc ((Nf/ZnPc)(ads) film) exhibited two broad absorption bands at 385 and 680-750 nm without any structural features, which is significantly different from the absorption spectra of either ZnPc solution in DMF or a (Nf/ZnPc)(mix) film prepared from a DMF solution containing Nf and ZnPc by solvent evaporation. This is ascribed to the formation of a ZnPc aggregate in the (Nf/ZnPc)(ads) film. Photoluminescence data for the (Nf/ZnPc)(mix) film suggested the presence of a ZnPc monomer and dimer at equilibrium in the film with a concentration of 0.1 M and that energy transfer occurs from the monomer to the dimer in excitation of the monomer (at lambda(ex) = 609 nm) to yield emission from the dimer. By contrast, photoluminescence data for the (Nf/ZnPc)(ads) film suggested that the excited ZnPc is self-quenched significantly by the formation of the ZnPc aggregate in the film. The lesser electroactivity of ZnPc in the (Nf/ZnPc)(ads) film compared with that in the (Nf/ZnPc)(mix) film could be ascribable to more difficult diffusion of ZnPc in the former film due to the formation of the ZnPc aggregate. The adsorption of ZnPc into the Nf film was significantly regulated by simple pretreatments of the Nf film such as immersion in solvents and storage under solvent vapors. The regulation was explained by controlled physical and chemical properties of a channel for mass and ion transport that is formed by sulfonate groups, countercations, and solvent molecules in the Nf film.