La3+掺杂CaFe2O4材料的制备及室温检测超低浓度甲醛

采用静电纺丝法成功制备了La³⁺掺杂CaFe₂O₄材料。通过X射线衍射、扫描电子显微镜和X射线光电子能谱对La³⁺掺杂CaFe₂O₄材料的结构和形貌进行了表征。随后,研究了La³⁺的掺杂量(质量分数)对CaFe₂O₄气敏性能的影响。研究表明,3%La³⁺掺杂CaFe₂O₄材料在室温下对100μL·L^-1甲醛的响应最高(R_a/R_g=14.1)。更为重要的是,对甲醛的最低检测限低至0.1 nL·L^-1,并且响应/恢复时间仅为4.3 s/8.4 s。     

以城市污泥基氧化石墨烯为模拟酶比色传感检测H2O2

本研究构建了以城市污泥基氧化石墨烯(GO)为模拟酶的比色传感器用于定量检测H₂O₂。以城市污泥为基质利用改进Hummers法制备氧化石墨烯(GO),利用GO具有过氧化物模拟酶的特性，能够催化H₂O₂与3,3′,5,5′-四甲基联苯胺(TMB)的显色反应定量检测H₂O₂。结果显示，在最佳检测条件HAc-NaAc缓冲溶液pH 4.8、TMB溶液浓度30 mmol·L^-1和城市污泥基GO浓度460μg·mL^-1时，H₂O₂浓度在0.1～2μmol·L^-1和10～150μmol·L^-1范围内，与体系吸光度呈良好的线性关系，最低检测限为0.01μmol·L^-1。此方法对实际水样中H₂O₂含量进行检测，回收率在99%～103.77%之间。研究表明，城市污泥基GO具有与传统G...     

CoFe2O4/CuO活化过氧乙酸高效降解磺胺甲恶唑(英文)

利用化学沉淀法和溶胶凝胶法,通过两步法成功制备出含有尖晶石钴铁氧体和氧化铜的复合催化剂CoFe₂O₄/CuO,通过扫描电子显微镜(SEM)、X射线光电子能谱(XPS)和X射线衍射(XRD)对制备出的CoFe₂O₄/CuO进行表征,探究不同高级氧化体系对磺胺甲恶唑(SMX)去除能力,考察过氧乙酸(PAA)浓度、催化剂投加量、水体中常见干扰物质(Cl^-,HCO-3,SO₄^2-,HA)和不同自由基捕获剂对SMX去除的影响。分析结果表明CoFe₂O₄/CuO同时具有CoFe₂O₄与CuO的特征,对比单独CoFe₂O₄与CuO,CoFe₂O₄/CuO对PAA展现出极高的活化性能,在最佳反应条件下(催化剂投加量=20mg·L^-1,c(PAA)=200μ...     

CeO2/γ-Al2O3复合材料制备及其光催化性能研究

以Ce(NO₃)₃·6H₂O及Al(NO₃)₃·9H₂O为原料,NH₄HCO₃为造孔剂,以沉淀法制备了具有介孔结构的CeO₂/γ-Al₂O₃光催化材料。研究了不同NH₄∶Al及Ce∶Al摩尔比等条件下制备CeO₂/γ-Al₂O₃样品的光催化性能。结果表明,所制备CeO₂/γ-Al₂O₃复合材料具有优异的光催化性能,最佳NH₄∶Al及Ce∶Al摩尔比分别为1及0.2,该条件下制备的样品BET比表面积为94.4642 m²·g^-1,孔径为5.8565 nm,对亚甲基蓝(MB)的光催化降解率可达93.59%,动力学常数k为0.0218 m...     

基于H2O2-丁基玫瑰红B-Fe2+体系的荧光猝灭法测定血清过氧化氢酶的活性

利用H₂O₂-Fe²⁺可以快速使丁基玫瑰红B(BRMB)发生荧光猝灭,而过氧化氢酶(CAT)对该猝灭有抑制效应,提出了基于H₂O₂-BRMB-Fe²⁺体系的荧光猝灭法测定血清CAT活性的方法。取血清样品10μL,加入1 mmol·L^-1 H₂O₂底液0.50 mL,于30℃恒温反应15 min,再依次加入0.02 mmol·L^-1 BRMB溶液0.70 mL、0.1 mol·L^-1冰乙酸-乙酸钠缓冲液(pH 4.2)1.00 mL和0.01 mol·L^-1 Fe²⁺溶液0.08 mL,于室温反应20 min后用水定容至10 mL,测定体系在590 nm发射波长处的荧光强度F;以煮死酶液为对照,按照同样的方法测定其在590 nm发射波长处的荧光强度F₀。结果表明：CAT活性在0.005...     

C/Cr2O3/TiO2复合材料的制备及其光催化性能研究

本文以制革含铬革屑为原材料,基于矿物鞣剂复鞣的原理,将Ti(IV)均匀、稳定地负载到含铬革屑上,在氮气氛围下,经高温热解制备得到C/Cr₂O₃/TiO₂光催化剂,并研究了其对四环素(TC)的光催化降解效果及机理。结果表明,C/Cr₂O₃/TiO₂光催化剂具有明显的介孔结构,比表面积较大,为277.47 m²·g^-1,Cr₂O₃和TiO₂已实现复合并负载在生物炭(C)上。通过光催化降解发现,在模拟自然光照下,当催化剂用量为0.04 g,TC初始浓度为50 mg·L^-1,溶液pH为2时,TC的去除率可高达99.99%。结合自由基捕获实验发现,C/Cr₂O₃/TiO₂光催化剂对TC的降解作用主要依靠反应体系中产生的大量·O₂^-,·OH和h⁺。     

二维配位聚合物[Tb(1,4⁃bdc)1.5(phen)(H2O)]n的合成、晶体结构及对Fe3+离子的荧光检测

通过溶剂热反应成功合成出一种新型2D配位聚合物[Tb(1,4-bdc)_1.5(phen)(H₂O)]_n(1)(1,4-H₂bdc=对苯二甲酸;phen=菲咯啉)。对其进行了单晶X射线衍射、粉末X射线衍射、红外光谱、元素分析、荧光光谱表征。X射线衍射晶体学分析表明,配合物1结晶于三斜晶系P1空间群,2个相邻的Tb(Ⅲ)离子与4个1,4-bdc^2-通过—O—C—O—桥联成双核单元,并进一步通过1,4-bdc^2-桥联成二维层状结构。荧光实验证明配合物1可以通过荧光猝灭机制检测Fe₃₊,Ksv=8.39×10³ L·mol-1,检测限为0.017μmol·L^-1。     

二维配位聚合物[Tb(1,4⁃bdc)1.5(phen)(H2O)]n的合成、晶体结构及对Fe3+离子的荧光检测

通过溶剂热反应成功合成出一种新型2D配位聚合物[Tb(1,4-bdc)_1.5(phen)(H₂O)]_n(1)(1,4-H₂bdc=对苯二甲酸;phen=菲咯啉)。对其进行了单晶X射线衍射、粉末X射线衍射、红外光谱、元素分析、荧光光谱表征。X射线衍射晶体学分析表明,配合物1结晶于三斜晶系P1空间群,2个相邻的Tb(Ⅲ)离子与4个1,4-bdc^2-通过—O—C—O—桥联成双核单元,并进一步通过1,4-bdc^2-桥联成二维层状结构。荧光实验证明配合物1可以通过荧光猝灭机制检测Fe₃₊,Ksv=8.39×10³ L·mol-1,检测限为0.017μmol·L^-1。     

锰源对尖晶石LiMn2O4高温性能的影响

为考察不同锰源对所制备尖晶石LiMn₂O₄(LMO)电化学性能的影响(特别是高温性能),采用沉淀法制备前驱体,通过不同煅烧温度制备得到最常用的锰氧化物(MnO₂、Mn₂O₃和Mn₃O₄)为锰源,经相同条件制备得到LMO正极材料,通过考察所得LMO形貌及电化学性能来研究锰源与LMO电化学性能的关系。研究结果表明,相同的前驱体在不同煅烧温度下可以得到不同的锰氧化物,且各自具有不同的形貌结构。由这些锰氧化物都可以得到高纯度的LMO,但产物形貌结构以及材料中的八面体晶体含量和尺寸不同。由Mn₂O₃制备得到的LMO材料中的八面体晶体含量最多,且尺寸最均匀,在3种LMO中容量性能、倍率性能和循环性能最好：0.2C(1C=148 mA·g^-1)下首次放电比容量为131.8 mAh·g^-1;3C下还有100.4 mAh·g^-1的放电比容量。其...     

有机胺表面修饰的一维CdSe0.8S0.2-DETA/二维SnNb2O6S型异质结及其可见光光催化CO2还原性能

近年来,随着人口的增加,汽车尾气的排放和化石燃料的燃烧加剧,大气中的二氧化碳含量持续增加.光催化技术是根本上解决上述问题的有效方法之一.但目前光催化技术存在催化效率低、载流子易复合等缺点.二维SnNb₂O₆纳米片能够有效缩短光生电子从材料内部到材料表面的传输距离,减少电子和空穴在光催化剂中的复合.但SnNb₂O₆的带隙较宽,导致可见光吸收率较低,而且在单一的半导体材料中,强氧化还原能力和高可见光吸收能力难以共存.CdSe_xS_1-x-DETA是一种直接带隙半导体,在可见光范围内可调节带隙.为了提高SnNb₂O₆的光催化活性和光吸收范围,在两种半导体材料之间设计异质结是一种有效的方法.其中,梯型(S型)异质结可以有效促进光生电子-空穴对的分离和转移,并保持强大的氧化和还原能力,在有效降低电子空穴对的复合速率的同时,增强光催化剂的活性和稳定性.本文通过溶剂热法设计制备了S型Cd Se_0.8S_0.2-DETA/SnNb₂O₆异质结构材料,利用X射线衍射(XRD)可以观察到除Cd Se_0.8S_0.2-DETA和SnNb₂O₆物相外,没有其它组分.采用扫描电子显微镜和透射电子显微镜(TEM)进一步观察了光催化剂的结构和形貌,结果表明,一维的Cd Se_0.8S_0.2-DETA生长在二维SnNb₂O₆纳米片上;能谱分析也证实该催化剂仅包含Cd Se_0.8S_0.2-DETA和SnNb₂O₆中的元素,无其它杂质;TEM的晶格条纹进一步表明两种物质是复合在一起的,不是机械的混合物.紫外可见光漫反射光谱(UV-Vis)结果表明,Cd Se_0.8S_0.2-DETA和SnNb₂O₆的吸收带边分别为1.71和2.52 e V.随着复合样品中Cd Se_0.8S_0.2-DETA含量的增加,其可见光吸收范围增大.光电流和阻抗响应图谱表明,Cd Se_0.8S_0.2-DETA/SnNb₂O₆复合材料具有较高的光响应和较低的阻抗,有利于电子空穴的运输.光催化CO₂还原测试结果表明,30%Cd Se_0.8S_0.2-DETA/SnNb₂O₆催化CO₂还原生成CO的产率(17.31μmol·g^-1·h^-1)最高,分别是SnNb₂O₆(6.2μmol·g^-1·h^-1)和Cd Se_0.8S_0.2-DETA(3.6μmol·g^-1·h^-1)的2.8倍和4.8倍.XRD测试结果表明,反应后光催化剂的与新鲜光催化剂的衍射峰基本相符.催化剂经过4次循环测试后催化性能基本稳定,说明光催化剂具有较好的稳定性.XPS表征结果显示,相对于纯的Cd Se_0.8S_0.2-DETA与SnNb₂O₆,复合材料中Cd,Se与S的结合能降低,周围的电子密度增大,而复合材料中Sn,Nb与O的结合能增加,周围的电子密度降低,这表明电子从SnNb₂O₆到Cd Se_0.8S_0.2-DETA的转移路径遵循S型异质结机理.综上,本文提供了一种简单的制备S型光催化方法,可以优化能带结构以促进光生载流子的分离,从而实现高效率的二氧化碳还原.     

LiCoO2梯度包覆LiNi0.96Co0.04O2电极材料的电化学性能

镍钴酸锂(LiNi0.8Co0.2O2)与目前商业用锂离子电池正极材料钴酸锂(LiCoO2)相比,具有成本低、实际比容量高和环境友好等优势。但LiNi0.8Co0.2O2的充放循环性能还有待提高,对其进行阳离子掺杂或表面修饰可以改善其电化学性能,这方面的研究已经成为热点。Fey等人[1]用溶胶凝胶法制     

Synthesis and properties of the double perovskites La2NiVO6, La2CoVO6, and La2CoTiO6

The double perovskites La₂CoVO₆, La₂CoTiO₆, and La₂NiVO₆, are described. Rietveld fitting of neutron and powder X-ray diffraction data show La₂NiVO₆ and La₂CoVO₆ to have a disordered arrangement of B-cations whereas La₂CoTiO₆ shows ordering of the B-cations (with ∼5% Co/Ti inversion). Curie-Weiss fits to the linear region of the 1/χ plots reveal Weiss temperatures of −107, −34.8, and 16.3 K for La₂CoVO₆, La₂CoTiO₆, and La₂NiVO₆, respectively, and magnetic transitions are observed. La₂CoTiO₆ prepared by our method differs from material prepared by lower-temperature routes. A simple antiferromagnetic spin model is consistent with the data for La₂CoTiO₆. These compounds are semiconductors with bandgaps of 0.41 (La₂CoVO₆), 1.02 (La₂CoTiO₆) and 0.45 eV (La₂NiVO₆).     

Preparation of ZrO2-TiO2-CeO2 and Its Application in the Selective Catalytic Reduction of NO with NH3

TiO₂,ZrO₂-TiO₂,andZrO₂-TiO₂-CeO₂ were prepared by co-precipitation method and characterized by X-ray diffraction (XRD), specific surface area measurements (BET), temperature programmed desorption (NH₃-TPD), oxygen storage capacity (OSC), and temperature programmed reduction (H₂-TPR). The results showed that ZrO₂-TiO₂-CeO₂ exhibited large number of surface strong acid, possessed some oxygen storage capacity, and strong redox property. The three materials were used as supports and the monolith catalysts were prepared with 1% (w) V₂O₅ and 9% (w)WO₃ for selective catalytic reduction (SCR) of NO with ammonia in the presence of excessive O₂, and the results of catalytic activity showed that the catalyst used ZrO₂-TiO₂-CeO₂ as support yielded nearly 100% NO conversion at 275 °C at a gas hourly space velocity (GHSV) of 10000 h⁻¹, and it had the best catalytic activity and showed great potential for practical application.     

WS2/CuGa2O4复合材料的制备及其气敏性

采用共沉淀法制备了CuGa₂O₄纳米材料,并利用水热法制备了一系列WS₂/CuGa₂O₄复合材料。结合X射线衍射(XRD)、扫描电子显微镜(SEM)、X射线光电子能谱(XPS)等对制备的材料进行了物相组成、表面形貌以及元素价态的分析。研究了WS₂的复合量对 CuGa₂O₄材料检测乙醇气体敏感性能的影响。实验结果表明,当 WS₂与 CuGa₂O₄质量比为 1%时,该复合材料制备的传感器在室温下对 100 μL·L^-1乙醇气体表现出 345.3 的灵敏度,响应时间和恢复时间分别为 184 和 69 s,且最低检测限为 0.1μL·L^-1。     

CeO2改性Ag-V2O5/TiO2催化剂的甲基吡啶氧化脱甲基性能

以锐钛矿TiO_2为载体,考察了CeO_2改性对Ag-CeO_2-V_2O_5/TiO_2催化3-甲基吡啶氧化脱甲基性能的影响,并优化了催化剂组成与制备条件.结果表明:Ce掺杂改性不仅能够与V物种作用形成Ce VO_4,而且促进V_2O_5分散,改善活性组分的氧化还原性能,从而提高3-甲基吡啶脱甲基转化率与选择性,改善Ag-V_2O_5/TiO_2催化性能.适宜的催化剂组成为V_2O_5负载量15%,Ce/V的摩尔比0.33,Ag质量分数1.0%.过高的焙烧温度将导致TiO_2载体向金红石型转变,Ag-CeO_2-V_2O_5/TiO_2适宜制备条件为450℃焙烧4 h.     

Cr2(WO4)3和Cr2(MoO4)3的负热膨胀特性研究

用液相反应-前驱物烧结法制备了Cr₂(WO₄)₃和Cr₂(MoO₄)₃粉体。298～1 073 K的原位粉末X射线衍射数据表明Cr₂(WO₄)₃和Cr₂(MoO₄)₃的晶胞体积随温度的升高而增大, 本征线热膨胀系数分别为(1.274±0.003)×10^-6 K^-1和(1.612±0.003)×10^-6 K^-1。用热膨胀仪研究了Cr₂(WO₄)₃和Cr₂(MoO₄)₃在静态空气中298～1 073 K范围内热膨胀行为，即开始表现为正热膨胀，随后在相转变点达到最大值，最后表现为负热膨胀，其负热膨胀系数分别为(-7.033±0.014)×10^-6 K^-1和(-9.282±0.019)×10^-6 K^-1。     

Why pressure induces an abrupt structural rearrangement in PdTe2 but not in PtTe2

High-pressure X-ray diffraction measurements were carried out for polymeric CdI₂-type compounds MTe₂ (M=Pt, Pd) to investigate if they undergo a structural phase transition under pressure as does IrTe₂. Up to 27 GPa at room temperature PtTe₂ does not undergo any structural phase transition. In contrast, however, an abrupt change in the inter-atomic distances occurs in PdTe₂ above 15.7 GPa at room temperature, and above 5 GPa at 300 °C, but the volume vs. pressure curve exhibits no discontinuity. To account for the differences between the isostructural compounds PtTe₂, PdTe₂ and IrTe₂, their electronic structures and bonding were analyzed on the basis of first principles electronic band structure calculations.     

Transport and optical properties of heavily hole-doped semiconductors BaCu2Se2 and BaCu2Te2

Experimental and theoretical studies of the electronic and optical properties of orthorhombic BaCu₂Se₂ and BaCu₂Te₂ are reported. Experimental data include the electrical resistivity, Hall coefficient, Seebeck coefficient, thermal conductivity, and lattice constants for , and optical transmission and diffuse reflectance data at room temperature. Nominally stoichiometric, polycrystalline samples form with hole concentrations inferred from Hall measurements of 2×10¹⁸ and 5×10¹⁹ cm⁻³ near room temperature for the selenide and telluride, respectively. The corresponding mobilities are near 15 cm² V⁻¹ s⁻¹ for both materials. Optical measurements reveal a transition near 1.8 eV in BaCu₂Se₂, while no similar feature was observed for BaCu₂Te₂. First principles calculations indicate both materials are direct or nearly direct gap semiconductors with calculated gaps near 1.0 eV and 1.3 eV for the telluride and selenide, respectively, and predict weak absorption below about 2 eV. Transport properties calculated from the electronic structure are also presented.     

Conversion of NO in NO/N2, NO/O2/N2, NO/C2H4/N2 and NO/C2H4/O2/N2 Systems by Dielectric Barrier Discharge Plasmas

An experimental study on the conversion of NO in the NO/N₂, NO/O₂/N₂, NO/C₂H₄/N₂ and NO/C₂H₄/O₂/N₂ systems has been carried out using dielectric barrier discharge (DBD) plasmas at atmospheric pressure. In the NO/N₂ system, NO decomposition to N₂ and O₂ is the dominating reaction; NO conversion to NO₂ is less significant. O₂ produced from NO decomposition was detected by an on-line mass spectrometer. With the increase of NO initial concentration, the concentration of O₂ produced decreases at 298 K, but slightly increases at 523 K. In the NO/O₂/N₂ system, NO is mainly oxidized to NO₂, but NO conversion becomes very low at 523 K and over 1.6% of O₂. In the NO/C₂H₄/N₂ system, NO is reduced to N₂ with about the same NO conversion as that in the NO/N₂ system but without NO₂ formation. In the NO/C₂H₄/O₂/N₂ system, the oxidation of NO to NO₂ is dramatically promoted. At 523 K, with the increase of the energy density, NO conversion increases rapidly first, and then almost stabilizes at 93–91% of NO conversion with 61–55% of NO₂ selectivity in the energy density range of 317–550 J L⁻¹. It finally decreases gradually at high energy density. A negligible amount of N₂O is formed in the above four systems. Of the four systems studied, NO conversion and NO₂ selectivity of the NO/C₂H₄/O₂/N₂ system are the highest, and NO/O₂/C₂H₄/N₂ system has the lowest electrical energy consumption per NO molecule converted.     

SnO2TiO2 复合半导体纳米薄膜的研究进展

本文概述了SnO₂TiO₂ 复合半导体纳米薄膜的发展历史和研究现状,对比分析了“混合”、“核壳”和“叠层”3 种复合薄膜的结构和性能特点,着重论述了叠层结构的SnO₂ /TiO₂复合薄膜的光电化学和光催化特性。结合作者的研究工作,探讨了SnO₂ /TiO₂双层复合薄膜上下层厚度对其光催化活性的影响,指出复合薄膜光催化活性的提高可归因于电子从TiO₂ 向SnO₂ 的迁移。最后对SnO₂ /TiO₂复合薄膜的局限性和发展潜势做一简要分析,强调了该复合薄膜本身的应用特点。