InAs量子点光致发光效率的研究

利用分子束外延技术制得InAs量子点样品,采用分光光度法对样品的光致发光效率进行研究.发现在InAs层和GaAs覆盖层之间插入隧道阻挡层,当激发功率密度为60W/cm²时,InAs量子点发射强度的增加量超过一个数量级.这种光复合效率的增强是由于浸润层中的非辐射跃迁受到了抑制所致.     

高密度、长波长InGaAs量子点材料的制备与表征

利用MOCVD外延生长技术, 对InAs/GaAs量子点材料的生长参数进行调节, 获得了高密度(~5×1010 cm^-2)的InAs量子点. 室温荧光光谱表明, 覆盖厚度为5 nm的InGaAs(In组分的摩尔分数为12%)低应变层量子点材料的基态发光波长为1.346 μm, 光谱线宽为24 meV. 研究结果表明, 利用较低温度生长InAs量子点, 结合较高In组分的InGaAs低应变层量子点材料可以实现发光波长红移, 有效地改善材料的光学特性.     

量子点自修饰TiO2p-n同质结的构建及光催化性能

在n型TiO₂纳米片表面原位沉积p型TiO₂量子点构建了量子点自修饰的TiO₂ p-n同质结(PNT-x), 并利用透射电子显微镜(TEM)、 X射线衍射(XRD)、 傅里叶变换红外光谱(FTIR)、 X射线光电子能谱(XPS)、 稳态荧光光谱(PL)、 拉曼光谱(Raman)、 紫外-可见漫反射光谱(UV-Vis DRS)、 电化学测试及电化学交流阻抗谱(EIS)对复合物的组成、 结构和光催化性能进行了表征和研究. 结果表明, PNT-x具有TiO₂量子点自修饰的结构, 量子点和纳米片中分别含有金属缺陷和氧缺陷, 其含量随组成变化可控, 并使得PNT-x表现出p-n同质结的典型特征, 与n-n Ⅱ型同质结以及块状p-n同质结相比, PNT-x中费米能级相差更大, 界面内电场更强, 具有更高的电荷分离和传递效率. 光照下, 样品的光催化活性顺序为PNT-400>p-25>PNT-600>PNT-200>p-TiO₂>n-TiO₂, 其中PNT-400的光催化产氢速率高达41.7 mmol·g^-1·h^-1, 分别为n-TiO₂纳米片、 Ⅱ型同质结和块状p-n同质结的4.3倍、 3.6倍和2.3倍, 并表现出优异的催化稳定性.     

Ag2Se@Ag2S核壳量子点的室温合成及其近红外荧光性能优化

在Ag₂Se量子点表面生长宽禁带无机壳层以消除表面缺陷是提高其光致发光性能的有效方法.与Ag₂Se相比,Ag₂S带隙更宽,晶格常数相似,是Ag₂Se量子点的理想壳层.然而,室温下精确制备Ag₂Se@Ag₂S核壳量子点仍然是一个挑战.分别采用胶体原子层沉积(c-ALD)法和一锅水相法在室温下合成了油溶性和水溶性的Ag₂Se@Ag₂S核壳量子点,并通过调控配体链长优化了水溶性Ag₂Se@Ag₂S核壳量子点近红外荧光性能.在c-ALD法中,以1-十二硫醇(DDT)包裹的Ag₂Se量子点作为种子,以油胺(OAM)配位的Ag(OAM-Ag)和Na₂S作为壳层前驱体,制备的油溶性Ag₂Se@Ag₂S核壳结构量子点暂无荧光发射,随后尝试通过高温退火但仍无法恢复其荧光发射能力.接着,在一锅水相法中,...     

水热法合成AgInS2/ZnS核/壳结构量子点及其荧光性能

以硫脲为硫源,采用谷胱甘肽(GSH)和柠檬酸钠(SC)为配体,通过水热法制备了水溶性AgInS2/ZnS(AIS/ZnS)核/壳结构量子点。系统研究了反应温度和配体用量对量子点的合成及其荧光性能的影响。采用X射线衍射(XRD)、透射电子显微镜(TEM)、紫外可见吸收光谱(UV-Vis)和光致发光光谱(PL)分别对量子点的物相、形貌和光学性能进行了表征,并考察了量子点的稳定性。实验结果表明,随着反应温度从70℃升高至90℃,促进了ZnS壳层的形成,有效地钝化了量子点的表面缺陷,获得的AIS/ZnS核/壳量子点的发光强度显著提高,发光峰位从600 nm蓝移至580 nm。配体的添加可以有效地平衡Zn^2+的化学反应活性,减缓ZnS壳层的生长,抑制核壳界面缺陷的形成,还能消除量子点的表面态,当nGSH/nZn^2+=2.0,nSC/nZn^2+=2.5时,AIS/ZnS量子点的荧光性能最佳。此外,AIS/ZnS核/壳结构量子点还具有优异的光学稳定性。     

SCN掺杂提高CsPbI3胶体量子点的稳定性和光探测性能

无机卤化物钙钛矿CsPbI₃胶体量子点因其优越的光电性能在光伏和发光器件领域中表现出极大的发展前景。然而,CsPbI₃较差的稳定性阻碍了实际应用。为此,我们采用SCN?离子掺杂CsPbI₃(SCN-CsPbI₃)量子点用于提高量子点的光学性能和稳定性。研究表明,SCN?离子掺杂不仅减少了量子点缺陷、改善了光学性能,还提高了Pb-X键能、量子点结晶质量以及钙钛矿结构稳定性。结果表明,SCN-CsPbI₃量子点的荧光量子产率(PLQY)超过90%,远高于未掺杂原始样品(PLQY为68%)。高的荧光量子产率表明量子点具有较低的缺陷态密度,这归咎于缺陷的减少。空间限制电荷和时间分辨荧光光谱等研究也证实SCN?离子掺杂减少了量子点的缺陷。此外,SCN-CsPbI₃量子点展现出很好的抗水性能,其荧光强度在水中浸泡4 h后依然保持85%的初始值。而未掺杂原始样品的荧光性能很快消失,这是因为水诱导其相变。基于SCN-CsPbI₃量子点的光电探测器表现出宽波域响应(400–700 nm),高的响应率(90 mA·W^?1)和超过1011 Jones的探测度,远高于未掺杂原始量子点探测器的性能(响应率为60 mA·W^?1和探测度为1010 Jones)。     

ZnS/SiO2协同包覆光阳极制备高效率Zn-Cu-In-Se量子点敏化太阳能电池

通过光阳极协同包覆的策略抑制Zn?Cu?In?Se(ZCISe)量子点敏化太阳能电池(QDSC)中光阳极/电解液界面上的电荷复合过程,提高电荷收集效率和电池光伏性能。采用溶液法在ZCISe量子点敏化的光阳极表面依次沉积包覆ZnS和SiO₂双钝化层,实现较单一ZnS包覆层更有效的界面电荷复合抑制作用,从而提高QDSC的性能。在包覆ZnS/SiO₂双钝化层后,所组装的ZCISe QDSC光电转换效率由传统单一ZnS包覆的12.17%提高到13.23%,这归因于双钝化层对光阳极/电解液界面电荷复合过程的有效抑制,电荷收集效率得到相应提升。     

水溶性近红外Ⅱ区荧光Ag2Te量子点的合成

量子点具有独特的光学性质, 在生物医学领域有着广泛的应用. Ag₂Te作为Ⅰ-Ⅵ族量子点中的一员, 因具有生物毒性小和带隙窄等优势而备受关注, 但是目前直接合成水溶性Ag₂Te量子点的方法较少, 而且可调节的荧光发射波长范围有限. 本文提出了一种合成荧光发射波长位于近红外Ⅱ区窗口的水溶性Ag₂Te量子点的新方法. 该方法以硝酸银为银前体, N-乙酰-L-半胱氨酸为配体, 碲前体利用硼氢化钠还原亚碲酸钠得到, 反应条件温和(室温、 大气氛围)且不涉及有毒的有机试剂, 绿色环保. 通过进一步的阳离子处理钝化其表面缺陷, 可以得到尺寸均一的超小粒径水溶性Ag₂Te量子点, 量子点的荧光发射波长为1160 nm, 量子产率为8.0% (以IR26染料为参照). 该方法所合成的Ag₂Te量子点具有良好的生物相容性, 注入小鼠体内后能观察到明显的近红外荧光, 具有进一步生物应用的潜力.     

金刚石颗粒表面Cr金属化及薄膜间界面扩散反应的研究

运用直流磁控溅射法可在金刚石颗粒表面沉积150nm的金属Cr层.在超高真空条件下,经300-600℃的热退火处理,可促进Cr膜与金刚石基底间的界面扩散和反应.利用俄歇电子能谱研究了Cr/金刚石颗粒界面的结合状态,发现Cr与金刚石薄膜发生了强烈的界面扩散,Cr元素渗入金刚石层达90nm,并在界面上发生化学反应形成Cr的碳化物层.对界面扩散反应动力学的研究表明,Cr/金刚石界面扩散反应的表观活化能为38.4kJ/mol,界面扩散反应主要由碳的扩散过程控制.热处理温度越高,界面扩散及反应越显著,但不利于碳化物层生成的氧化反应速度也会有所增加,界面反应产物从Cr₂C₃转变为Cr₂C物种.延长热处理时间有利于金属碳化物的生成,同样导致界面反应产物从Cr₂C₃转变为Cr₂C物种.     

溶剂热插层法制备荧光石墨相氮化碳量子点及其在Fe3+检测中的应用

利用溶剂热法, 基于氢氧化钾的插层作用制备了荧光氮化碳量子点(g-C₃N₄ QDs). 所获得的氮化碳量子点具有良好的水溶性和荧光稳定性. 透射电子显微镜(TEM)照片显示, 氮化碳量子点的粒径约为2.3 nm; X射线光电子能谱(XPS)和红外光谱(FTIR)结果表明, 氮化碳量子点表面存在大量的亲水基团; 荧光发射光谱(PL)结果表明, 氮化碳量子点具有激发波长依赖性. 基于三价铁离子(Fe³⁺)对荧光氮化碳量子点荧光的猝灭现象, 构建了一种用于检测Fe³⁺的荧光传感器, 在Fe³⁺浓度为5~100 μmol/L范围内, 检测体系表现出良好的线性关系, 检出限约为0.5 μmol/L, 实现了对Fe³⁺的高效、 灵敏、 选择性检测.     

Atomic structure of InAs quantum dots on GaAs

In recent years, the self-assembled growth of semiconductor nanostructures, that show quantum size effects, has been of considerable interest. Laser devices operating with self-assembled InAs quantum dots (QDs) embedded in GaAs have been demonstrated. Here, we report on the InAs/GaAs system and raise the question of how the shape of the QDs changes with the orientation of the GaAs substrate. The growth of the InAs QDs is understood in terms of the Stranski–Krastanow growth mode. For modeling the growth process, the shape and atomic structure of the QDs have to be known. This is a difficult task for such embedded entities.

In our approach, InAs is grown by molecular beam epitaxy on GaAs until self-assembled QDs are formed. At this point the growth is interrupted and atomically resolved scanning tunneling microscopy (STM) images are acquired. We used preparation parameters known from the numerous publications on InAs/GaAs. In order to learn more about the self-assemblage process we studied QD formation on different GaAs(0 0 1), (1 1 3)A, and ( )B substrates. From the atomically resolved STM images we could determine the shape of the QDs. The quantum “dots” are generally rather flat entities better characterized as “lenses”. In order to achieve this flatness, the QDs are terminated by high-index bounding facets on low-index substrates and vice versa. Our results will be summarized in comparison with the existing literature.     

Surface chemistry studies of (CdSe)ZnS quantum dots at the air-water interface

Trioctylphosphine oxide- (TOPO-) capped (CdSe)ZnS quantum dots (QDs) were prepared through a stepwise synthesis. The surface chemistry behavior of the QDs at the air-water interface was carefully examined by various physical measurements. The surface pressure-area isotherm of the Langmuir film of the QDs gave an average diameter of 4.4 nm, which matched very well with the value determined by transmission electron microscopy (TEM) measurements if the thickness of the TOPO cap was counted. The stability of the Langmuir film of the QDs was tested by two different methods, compression/decompression cycling and kinetic measurements, both of which indicated that TOPO-capped (CdSe)ZnS QDs can form stable Langmuir films at the air-water interface. Epifluorescence microscopy revealed the two-dimensional aggregation of the QDs in Langmuir films during the early stage of the compression process. However, at high surface pressures, the Langmuir film of QDs was more homogeneous and was capable of being deposited on a hydrophobic quartz slide by the Langmuir-Blodgett (LB) film technique. Photoluminescence (PL) spectroscopy was utilized to characterize the LB films. The PL intensity of the LB film of QDs at the first emission maximum was found to increase linearly with increasing number of layers deposited onto the hydrophobic quartz slide, which implied a homogeneous deposition of the Langmuir film of QDs at surface pressures greater than 20 mN.m(-1).     

表面配体对CdSe量子点发光性质的影响

本文采用热注入法合成了以油胺/油酸为表面配体的、粒径均一的CdSe量子点(CdSe QDs)。调节表面配体交换中辛硫醇与CdSe QDs的比例,研究了表面配体对CdSe QDs光致发光及电致化学发光性质的影响,并提出了CdSe QDs的发光模型。结果表明,辛硫醇表面配体显著影响CdSe QDs的带边发射和深能级陷阱发射,因而导致CdSe QDs光致发光强度的显著降低,以及电致化学发光强度的增加。上述结果为进一步提高量子点的发光性能提供了依据。     

Subsecond luminescence intensity fluctuations of single CdSe quantum dots

Photoluminescence (PL) intermittency characteristics are examined for single quantum dots (QDs) in a CdSe QD sample synthesized at a slow rate at 75 degrees C. Although the PL quantum efficiency was relatively low ( approximately 0.25), we noticed that the PL intensity of single CdSe QDs fluctuated on a subsecond time scale with short-lived "on" and "off" states. The subsecond PL intensity fluctuations of CdSe QDs are different from "on" and "off" PL blinking generally observed for QDs fluctuating on a millisecond to minute time scale. We characterized single QDs by identifying polarized excitations, topographic imaging using atomic force microscopy (AFM), and transmission electron microscopy (TEM). From analysis of the PL intensity trajectories from >100 single CdSe QDs, the average intermittency time was 213 ms. From the PL quantum efficiency, slow growth of QDs, intensity trajectory analyses, and previous reports relating surface trap states and PL properties of QDs, we attribute the subsecond PL intensity fluctuations of single CdSe QDs and short-lived "on" and "off" states to a high-density distribution of homogeneous surface trap states.     

Facile synthesis and step by step enhancement of blue photoluminescence from Ag-doped ZnS quantum dots

Our results pertaining to the step by step enhancement of photoluminescence (PL) intensity from ZnS:Ag,Al quantum dots (QDs) are presented. Initially, these QDs were synthesized using a simple co-precipitation technique involving a surfactant, polyvinylpyrrolidone (PVP), in de-ionised water. It was observed that the blue PL originated from ZnS:Ag,Al QDs was considerably weak and not suitable for any practical display application. Upon UV (365 nm) photolysis, the PL intensity augmented to ~170% and attained a saturation value after ~100 min of exposure. This is attributed to the photo-corrosion mechanism exerted by high-flux UV light on ZnS:Ag,Al QDs. Auxiliary enhancement of PL intensity to 250% has been evidenced by subjecting the QDs to high temperatures (200 °C) and pressures (~120 bars) in a sulphur-rich atmosphere, which is due to the improvement in crystallanity of ZnS QDs. The origin of the bright-blue PL has been discussed. The results were supported by X-ray phase analysis, high-resolution electron microscopy and compositional evaluation.     

Highly luminescent CdSe/Cd(x)Zn(1-x)S quantum dots coated with thickness-controlled SiO2 shell through silanization

A silanization technique of hydrophobic quantum dots (QDs) was applied to SiO(2)-coated CdSe/Cd(x)Zn(1-x)S QDs to precisely control the SiO(2) shell thickness and retain the original high photoluminescence (PL) properties of the QDs. Hydrophobic CdSe/Cd(x)Zn(1-x)S core-shell QDs with PL peak wavelengths of 600 and 652 nm were prepared by a facile organic route by using oleic acid (OA) as a capping agent. The QDs were silanized by using partially hydrolyzed tetraethyl orthosilicate by replacing surface OA. These silanized QDs were subsequently encapsulated in a SiO(2) shell by a reverse micelles synthesis. The silanization plays an important role for the QDs to be coated with a homogeneous SiO(2) shell and retain a high PL efficiency in water. Transmission electron microscopy observation shows that the shells are 1-9 nm with final particle sizes of 10-25 nm, depending on the initial QD size. In the case of short reaction time (6 h), the QDs were coated with a very thin SiO(2) layer because no visible SiO(2) shell was observed but transferred into the water phase. The silica coating does not change the PL peak wavelength of the QDs. The full width at half-maximum of PL was decreased 4 nm after coating for QDs emitting at both 600 and 652 nm. The PL efficiency of the SiO(2)-coated is up to 40%, mainly determined by the initial PL efficiency of the underlying CdSe/Cd(x)Zn(1-x)S QDs.     

Ternary I-III-VI quantum dots luminescent in the red to near-infrared

We report the synthesis of a size series of copper indium selenide quantum dots (QDs) of various stoichiometries exhibiting photoluminescence (PL) from the red to near-infrared (NIR). The synthetic method is modular, and we have extended it to the synthesis of luminescent silver indium diselenide QDs. Previous reports on QDs luminescent in the NIR region have been primarily restricted to binary semiconductor systems, such as InAs, PbS, and CdTe. This work seeks to expand the availability of luminescent QD materials to ternary I-III-VI semiconductor systems.     

Optical and dynamic properties of water-soluble highly luminescent CdTe quantum dots

CdTe quantum dots (QDs) were synthesized in aqueous solution using thioglycolic acid (HS-CH2COOH, TGA) as a stabilizer. The phenomenon of "on" and "off" luminescence intermittency (blinking) of CdTe QDs in PVA and trehalose was investigated by single-molecule optical microscopy, and we identified that the intermittencies of single QDs were correlated with the interaction of water molecules absorbed on the QD surface. The "off" times, the interval between adjacent "on" states, remained essentially unaffected with an increase in excitation intensity. Every QD showed a similar power law behavior for the "off" time distribution regardless of the excitation intensity and aqueous environment of the QDs. In the case of "on" time distribution, power law behavior with an exponential cutoff tail is observed at longer time scales. The time traces indicated that the "on" time was inversely proportional to the excitation intensity; the duration of "on" time became shorter with increasing excitation intensity. An increase in the duration of "on" time was observed in trehalose with respect to that in PVA. We obtained a clear decrease in the power law exponent when PVA was replaced with trehalose. These observations indicate that the luminescence blinking statistics of water-soluble single CdTe QDs is significantly dependent on the aqueous environment, which is interpreted in terms of passivation of the surface trap states of QDs.