光电化学刻蚀n^＋—Si的电致发光

ｎ＋－Ｓｉ在ＨＦ水溶液中经光电化学刻蚀形成的微米级多孔硅（ＰＳ）具有较好的电致发光（ＥＬ）性能，其发光光谱的波长范围约在５００～８００ｎｍ之间，阴极ＥＬ的波长和强度均随调制电位可逆变化；在酸性溶液中，发光强度较大，光淬灭过程也较中性溶液为慢．与ｎ－－Ｓｉ的结果类似，ＰＳ的制备电位也决定性地影响着ＥＬ的强度．光淬灭前的伏安行为表明，除Ｓ２Ｏ２－３和Ｈ＋还原外，可能还涉及ＰＳ表面化合物的转化．对能带图进行了讨论．     

掺铕多孔硅的恒电位电解法制备及其光致发光

首次报道掺稀土多孔硅的恒电位电解法和稀土硝酸盐－支持电解质－非乙醇有机溶剂的电解体系,这一新方法和新体系具有易于控制电解产物,可掺入高浓度稀土（１０＾２１／ｃｍ＾３以上）,自主控制掺人稀土的浓度并显著增强多孔硅室温光致发光的优点。研究了溶剂、外加电压、Ｅｕ（ＮＯ３）３浓度及电解时间对多孔硅（ＰＳ）室温光致发光的影响,优化了恒电位电解法制备掺铕多孔硅的条件,获得了室温光致发光强度高于多孔硅的ＰＳ：Ｅ     

BR和DCP在PS／LLDPE／SBS体系中的协同作用

ＢＲ和ＤＣＰ在ＰＳ／ＬＬＤＰＥ／ＳＢＳ体系中的协同作用方征平，许承威，项义崇（杭州大学化学系，杭州，３１００２８）关键词聚苯乙烯，聚乙烯，共混物，相分散－交联协同作用相分散（增容）－交联协同作用是提高不相容聚合物共混物性能的有效方法，我们曾将此方法成...     

PES／PC共混体系的相容性与力学性能

ＰＥＳ／ＰＣ共混体系的相容性与力学性能姜振华，马荣堂，寇喜春，安立佳（吉林大学化学系长春）（中国科学院长春应用化学研究所长春１３００２２）关键词聚醚砜，聚碳酸酯，共混物，力学性能聚醚砜（ＰＥＳ）是一种性能优异的特种工程塑料，它具有强度高、刚性大、耐热...     

酞菁（H_2TAP）的X－射线光电子能谱（XPS）

酞菁（Ｈ_２ＴＡＰ）的Ｘ－射线光电子能谱（ＸＰＳ）朱志昂，卜显和，刘月霞（南开大学化学系天津３０００７１）ＰａｕｌＧ．Ｇａｓｓｍａｎ（美国明尼苏达大学化学系）关键词酞青，ＸＰＳ，Ｃ１ｓ电子结合能，Ｎ１ｓ电子结合能酞菁及其金属配合物作为叶绿素，血红素的?..     

化学氧化对多孔硅表面态和光致发光的影响

自1990年英国科学家Canham发现室温下多孔老（poroussilicon缩写为PS）的可见光区光致发光以来，在世界范围内迅速形成了一股强大的多孔硅研究热．硅是间接禁带半导体．禁带宽度为1．11eV，不可能在可见区发光．对于多孔硅在可见区的强烈荧光发射及其形成，Canham和Lehamm等分别建议可用量子线的尺寸限制效应未解释[1,2]．但Tsai和Hance等用FTIR研究经过后处理的多孔老样品[3]，认为多孔硅的发光与表面的硅氢化物相关，并提出硅的二氢化物SiH2的浓度与荧光强度相关．关于多孔硅的发光机制，还有非晶态发光[4]等说法．因止匕多孔硅的发…     

多孔硅镶嵌正丁胺/激光染料复合膜的荧光谱

多孔介质染料镶嵌膜有可能是发展固体染料激光器的一种途径[1].由于其所具有的微孔结构和大的比表面积,故使其成为激光染料理想的载体,以形成多孔硅基发光材料[2].　　我们用正丁胺作碳源,采用射频辉光(ＲＦ)放电法制备碳膜.利用正丁胺、Ｒ6Ｇ/聚乙二醇分别作碳源和蒸发源得到一种混合膜,如将其沉积在刚制备的新鲜多孔硅上则得到多孔硅镶嵌复合膜.本文着重研究了镶嵌于多孔硅中的正丁胺/Ｒ6Ｇ的荧光光谱,并考察了多孔硅衬底的改变对多孔硅镶嵌膜发光的影响.1　样品制备　　(1)多孔硅的制备　制备多孔硅(ＰＳ)所用的材料为(100)晶向的ｐ型单…     

恒电位电解法制备光致发光掺钬多孔硅

研究了一种新的多孔硅掺稀土的电化学方法———恒电位电解，以及稀土硝酸盐支持电解质有机溶剂的新电解体系。这一方法和体系的特点是通过采用适当外加电压来控制电解产物，提高掺入的稀土浓度，提高发光强度，同时避免生成导致发光不稳定的产物，提高发光稳定性。优化了阳极氧化制备多孔硅的条件和阴极还原制备掺钬多孔硅的条件（钬化合物浓度、溶剂、离子强度、电解电压、时间），获得光致发光强度高于多孔硅的掺钬多孔硅。对多孔硅和掺钬多孔硅的光致发光机制进行了讨论。     

多孔硅的制备与光伏特性研究

采用特制的电解池在不同条件下制备了一系列多孔硅样品。通过测定其ＳＰＳ发现，多孔硅的ＳＰＳ特征带同单晶硅相比有明显蓝移，并且随制备条件不同，蓝移效应也不同。电解质中ＨＦ浓度和电解时间对基ＳＰＳ响应有明显影响，这一现象的出现主要归因于最子线阵的生成。     

蓝色发光染料DPA合成及其化学发光探讨

蓝色发光染料ＤＰＡ合成及其化学发光探讨万秀英，张儒祥（常德师范高等专科学校化学系常德　４１５０００）关键词ＤＰＡ，发光染料，化学发光，合成ＤＰＡ是一种经典荧光染料，抗氧化能力强，荧光量子产率高（Ф＝０．８４），有一定溶解性。ＤＰＡ的合成，文献中多用苯...     

多孔硅-导电聚酯材料复合发光器的光学特性研究

poly-4-dicyanomethylene-4H-cyclopenta\[2,1-b:3,4-b'\]dithiophene monolayer (PCDM)是一种导电、低导带聚酯材料.如果在多孔硅纳米结构中附上一层以自组方式生成的PCDM单分子层,就可以制成能够产生稳定电致发光的器件.发光器的结构是金/PCDM/多孔硅/硅/铝.发光器的电致发光,在白天可用肉眼观察到.有很宽的发光波长,几乎覆盖了整个可见光区域且峰值位于650 nm.发光器的面积为1 cm2,启动正向电压在14～30 V,电流约300 mA.经长时间测试,发光器的稳定性很好,在空气中放置3个月,在输入功率不变的情况下,发光强度也不发生变化.当施以反向电压时,样品仍可以发光而且稳定性较高,在250 h内I～V未发生明显变化.扫描电镜图像显示PCDM覆盖的表面要比多孔硅表面平整,而PCDM分子有可能进入到多孔硅纳米孔径当中去,起到了提高发光器稳定性和延长其寿命的作用.     

氧化钒/多孔硅/硅结构的微观形貌、纳米力学及温敏特性

采用电化学腐蚀法在硅基片表面形成多孔硅, 利用直流对靶反应磁控溅射方法在不同电流密度条件下制备的多孔硅样品表面上溅射沉积了VOx薄膜, 获得了氧化钒/多孔硅/硅(VOx/PS/Si)结构. 采用场发射扫描电镜(FESEM)观测多孔硅及VOx/PS/Si结构的微观形貌, 采用纳米压痕仪器测量VOx/PS/Si结构的纳米力学特性, 通过电阻-功率曲线分析研究其温度敏感特性. 实验结果表明, 在40和80 mA·cm-2电流密度下制备多孔硅的平均孔径分别为18和24 nm, 用显微拉曼光谱法(MRS)测量其热导率分别为3.282和1.278 kW·K-1; VOx/PS/Si结构的电阻随功率变化的平均速率分别为60×10⁹和100×10⁹ Ω·W-1, VOx/PS/Si结构的显微硬度分别为1.917和0.928 GPa. 实验结果表明, 多孔硅的微观形貌对VOx/PS/Si结构的纳米力学及温敏特性有很大的影响, 大孔隙率多孔硅基底上制备的VOx/PS/Si 结构比小孔隙率多孔硅基底上制备的具有更高的温度灵敏度, 但其机械稳定性也随之下降.     

Quantum confinement effect in electroluminescent porous silicon

Ｖｉｓｉｂｌｅｐｈｏｔｏｌｕｍｉｎｅｓｃｅｎｃｅ(ＰＬ)ｏｎｈｉｇｈｌｙｐｏｒｏｕｓｓｉｌｉｃｏｎｌａｙｅｒｓｂｙｅｌｅｃｔｒｏｃｈｅｍｉｃａｌｌｙｅｔｃｈｉｎｇｃｒｙｓｔａｌｌｉｎｅｓｕｂｓｔｒａｔｅｓｗａｓｒｅｐｏｒｔｅｄｉｎ1990[1].Ｔｈｉｓｓｕｒｐｒｉｓｉｎｇｏｐｔｉｃａｌｐｒｏｐｅｒｔｙｏｆｐｏｒｏｕｓｓｉｌｉｃｏｎ(ＰＳ)ｉｓｅｘｐｌａｉｎｅｄａｓｆｏｌｌｏｗｓ:ｔｈｅｐｏｒｏｕｓｌａｙｅｒｉｓｃｏｍｐｏｓｅｄｏｆｑｕａｎｔｕｍｓｉｚｅｅｎｔｉｔｉｅｓ,ｗｈｅｒｅａｑｕａｎｔｕｍｃｏｎｆｉｎ…     

Voltage-tunable Electroluminescence of Porous Silicon

The voltage-tunable EL was obtained upon cathodic bias of n-type PS in contact with aqueous solution containing the persulphate ion. The EL behavior as a function of the external voltage and time was investigated. The results suggest that the mechanisms of voltage-tunable EL of n-typt PS cannot easily be attributed to quantum confinement effect.     

聚四氟乙烯微粉辐照接枝苯乙烯的XPS研究

聚四氟乙烯微粉辐照接枝苯乙烯的ＸＰＳ研究许观藩，罗云霞，杨弘（中国科学院长春应用化学研究所，长春，１３００２２）关键词聚四氟乙烯，苯乙烯，表面接枝，ＸＰＳ用辐照方法在疏水性高聚物材料表面接枝聚合亲水性单体，可以达到改性的目的．文献中所用的高聚物材料包...     

The structure of latex polystyrenes blends: dynamic properties of PS/XPS systems

The dynamic behavior of latex polystyrene/crosslinked polystyrene (PS/XPS) systems has been studied. PS and XPS lattices were either physically blended, or used as seeds in semi-continuous sequential two-stage polymerizations. The Cox–Merz equation is not met by any PS/XPS system. Power-law relaxation has been observed for the physically blended PS–b–XPS system in the terminal region. A two-parameter equation suggested for polymers at the critical gel point fits the experimental data for XPS contents beyond 60%. This has been attributed to the formation of a “continuous” XPS network. This network is able to disrupt upon flow, due to the unique morphology of the XPS phase. It is possible that, for the sequential system with XPS seed particles, such a network may appear at a lower XPS content, due to a PS occlusion effect. A qualitative model is presented for these PS/XPS systems.     

Optimization of high-performance blue organic light-emitting diodes containing tetraphenylsilane molecular glass materials

Molecular glass material (4-(5-(4-(diphenylamino)phenyl)-2-oxadiazolyl)phenyl)triphenylsilane (Ph(3)Si(PhTPAOXD)) was used as the blue light-emitting material in the fabrication of high-performance organic light-emitting diodes (OLEDs). In the optimization of performance, five types of OLEDs were constructed from Ph(3)Si(PhTPAOXD): device I, ITO/NPB/Ph(3)Si(PhTPAOXD)/Alq(3)/Mg:Ag, where NPB and Alq(3) are 1,4-bis(1-naphylphenylamino)biphenyl and tris(8-hydroxyquinoline)aluminum, respectively; device II, ITO/NPB/Ph(3)Si(PhTPAOXD)/TPBI/Mg:Ag, where TPBI is 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene; device III, ITO/Ph(2)Si(Ph(NPA)(2))(2)/Ph(3)Si(PhTPAOXD)/TPBI/Mg:Ag, where Ph(2)Si(Ph(NPA)(2))(2) is bis(3,5-bis(1-naphylphenylamino)phenyl)-diphenylsilane, a newly synthesized tetraphenylsilane-containing triarylamine as hole-transporting material; device IV, ITO/Ph(2)Si(Ph(NPA)(2))(2)/NPB/Ph(3)Si(PhTPAOXD)/TPBI/Mg:Ag; device V, ITO/CuPc/NPB /Ph(3)Si(PhTPAOXD)/Alq(3)/LiF/Al, where CuPc is Cu(II) phthalocyanine. Device performances, including blue color purity, electroluminescence (EL) intensity, current density, and efficiency, vary drastically by changing the device thickness (100-600 A of the light-emitting layer) and materials for hole-transporting layer (NPB and/or Ph(2)Si(Ph(NPA)(2))(2)) or electron-transporting material (Alq(3) or TPBI). One of the superior OLEDs is device IV, showing maximum EL near 19 000 cd/m(2) with relatively low current density of 674 mA/cm(2) (or near 3000 cd/m(2) at 100 mA/cm(2)) and high external quantum efficiency of 2.4% (1.1 lm/W or 3.1 cd/A). The device possesses good blue color purity with EL emission maximum (lambda(max)(EL)) at 460 nm, corresponding to (0.16, 0.18) of blue color chromaticity on CIE coordinates. In addition, the device is reasonably stable and sustains heating over 100 degrees C with no loss of luminance on the basis of the annealing data for device V. Formation of the exciplex at the interface of NPB and Ph(3)Si(PhTPAOXD) layers is verified by EL and photoluminescence (PL) spectra studies on the devices with a combination of different charge transporting materials. The EL due to the exciplex (lambda(max)(EL) at 490-510 nm) can be properly avoided by using a 200 A layer of Ph(3)Si(PhTPAOXD) in device I, which limits the charge-recombination zone away from the interface area.     

三维编织C/SiC纤维复合块材的XPS研究

用常规XPS、小面积XPS和成象XPS研究了三维编织的C/SiC纤维复合材料.结果表明,在燃气中灼烧后材料表面生成的暗红色反应是由于层中的SiC已氧化成氧化硅,同时反应层中还引入了杂质Fe、Na、Ca和Al;在反应层下Si以元素Si、SiC和氧化硅多种形式存在.块材横截面的多点小面积XPS分析结果表明,元素硅的相对浓度随深度增加而减少, SiC的相对浓度则随深度增加而增加.块材横截面的成象XPS分析清楚地显示了SiC 在纤维束边界间呈大致均匀的分布,在块材两边元素Si的浓度明显偏高.根据XPS象的线性扫描结果估计了纤维束、束间SiC层和块材边缘元素Si富集层的厚度.     

多孔硅表面钝化对其发光性能的影响

报道多孔硅（PS）的表面钝化对其光致发光（PL）和电致发光（EL）的影响。PL和EL谱表明,经钝化处理的PS的PL和EL强度明显增强,且发光峰位较大蓝移;存放实验表明,经钝化处理的PS的PL和EL发光强度和发光峰位具有较好的稳定性;I～V曲线显示,经钝化处理的PS发光器件具有较低的启动电压。这些结果表明：用钝化处理的方法是提高PS的PL和EL强度和稳定性及改善其器件性能的有效途径。     

Deposition of tetracene on GaSe passivated Si(111)

The growth of tetracene on GaSe half-sheet passivated Si(111) is investigated under ultrahigh vacuum (UHV) using low-energy electron diffraction (LEED) and photoelectron spectroscopy (PS). A highly ordered thin-film growth was observed in the initial stages of the deposition process. All proposed structures form a coincidence lattice with the underlying substrate, due to the influence of the molecule-substrate interactions and are built up by either flat lying tetracene molecules at low coverage or tilted molecules at higher coverages. Photoelectron spectroscopy (XPS/UPS) shows that the deposited tetracene molecules induce band bending in the silicon substrate. No band bending was observed in the tetracene film, and an interface dipole potential of 0.45 eV was measured between the GaSe passivated Si(111) surface and the tetracene film.