Fe元素及点缺陷对焦炭表面NH_3异相吸附的影响:密度泛函理论研究

采用密度泛函理论,并使用具有周期性边界条件的石墨烯模型近似模拟焦炭表面,研究了Fe原子修饰及点缺陷对NH_3在焦炭表面异相吸附的影响。计算结果表明,NH_3分子在点缺陷石墨烯表面的吸附属于物理吸附,结合能为-0.381 e V;NH_3分子吸附在Fe修饰的完整石墨烯表面属于化学吸附,吸附能为-1.442 eV; Fe原子修饰及点缺陷单独存在下NH_3的吸附能均大于NH_3在完整石墨烯表面的吸附(吸附能为-0.190 eV)。此外,Fe原子修饰与点缺陷共存对NH_3的吸附具有协同作用,结合能达到-3.538 eV,明显大于两者单独存在下NH_3的吸附能之和,综合分析Mulliken布居数与态密度,Fe原子与石墨烯表面、NH_3分子之间有更多地电荷转移,可以解释两者共存对NH_3吸附协同促进的原因。     

脱质子化1,3环加成石墨烯外在固定位上的贵金属纳米线(英文)

为研究纳米线的形成机理,通过密度泛函理论(DFT)研究了贵金属(铂)在脱质子化1,3-环加成石墨烯上的吸附.研究发现:(1)吸附在1,3-环加成石墨烯上的铂原子引起该结构的脱质子化过程并形成脱质子化1,3-环加成石墨烯;(2)贵金属在脱质子化1,3-环加成石墨烯上的锚定位是氮原子邻位的碳原子,这在邻位碳原子的平均巴德电荷分析(高达1.0e)中得到进一步的证实;(3)铂原子在相邻的脱质子化吡啶炔单元上形成金属纳米线,并且该纳米线比相应的铂团簇稳定得多;(4)电子结构分析表明,铂的吸附并没有从根本上改变脱质子化1,3-环加成石墨烯的电子性质.铂金属的掺杂使得Pt6团簇吸附形成的复合物呈现金属性,而Pt6纳米线形成的复合物则为半金属性.     

Sc,Ti,V修饰B/N掺杂单缺陷石墨烯的储氢研究

3d过渡金属修饰是改善石墨烯储氢性能的最有效途径, 但仍存在金属团聚和H₂解离导致难以脱附的问题. 提出了B/N掺杂单缺陷石墨烯(BMG/NMG)的策略来避免以上两个问题. 密度泛函理论计算结果表明, N掺杂可以使Sc, Ti, V与石墨烯的结合能提高3~4倍, B掺杂可以将Sc与石墨烯的结合能提高3倍. Sc/BMG和Sc/NMG吸附的第一个H₂不会解离. Sc/BMG中Sc吸附5个H₂, 平均氢分子结合能为-0.18～-0.43 eV, 并且可以通过在同侧锚定多个Sc原子形成Sc/C₃B₂五元环增加H₂吸附位点. Sc/NMG中每个Sc吸附6个H₂, 平均氢分子结合能为-0.17～-0.29 eV, 还可以通过在异侧修饰形成Sc/N₃/Sc单元进一步提高储氢能力. 研究结果将为设计基于3d过渡金属修饰碳材料的储氢材料提供理论基础.     

贵金属原子与点缺陷石墨烯的键增强作用

通过密度泛函理论研究了Ag、Au、Pt原子在完美和点缺陷(包括N掺杂、B掺杂、空位点缺陷)石墨烯上的吸附以及这些体系的界面性质.研究表明Ag、Au不能在完美的石墨烯上吸附,N、B掺杂增强了三种金属与石墨烯之间的相互作用.而空位点缺陷诱发三种金属在石墨烯上具有强化学吸附作用.通过电子结构分析发现,N掺杂增强了Au、Pt与C形成的共价键,而Au、Ag与B形成了化学键.空位点缺陷不仅是金属原子的几何固定点,同时也增加了金属原子和碳原子之间的成键.增强贵金属原子和石墨烯相互作用的顺序是:空位点缺陷>>B掺杂>N掺杂.     

Ni2Fe2P团簇结构及电子性质的DFT研究

利用DFT(密度泛函理论)方法对原子簇模型Ni2Fe2P的二十余种可能构型分别在二、四重态下进行优化计算，分析比较了优化结果的能量、成键及电荷分布情况。结果表明：原子簇Ni2Fe2P二重态比四重态稳定，二重态时以变形的四方锥构型最稳定，四重态时以变形的三角双锥构型最稳定；无论是二重态，还是四重态，Fe-P间的成键能力均要强于其它键；随着P原子周围成键金属原子的增加．P原子所带正电荷逐渐增加。     

吡咯氮配位单原子铜催化剂的电催化二氧化碳还原性能

采用温度控制的浸渍-热解法, 合成了以碳纳米管为载体的一系列铜单原子催化剂. 扩展X射线吸收精细结构(EXAFS)分析表明, 催化剂中的单原子铜位点分别由吡啶氮和吡咯氮配位. 电催化性能测试表明, 所制备催化剂可用于电催化二氧化碳生成一氧化碳, 由吡啶氮配位的铜单原子催化剂的反应选择性较差, 而由吡咯氮配位的铜单原子催化剂则具有更强的活性, CO法拉第效率在-0.70 V(vs. RHE)时可达到96.3%; 吡咯氮配位的铜单原子中心对于析氢反应具有更好的抑制效果.     

电化学界面SERS光谱的密度泛函理论研究

运用量子化学密度泛函DFT理论和拉曼光谱研究了吡啶在过渡金属(Ⅷ族)和币族金属(IB族)表面吸附的成键机理及其拉曼光谱的变化规律.总结了作者研究组有关吡啶-金属SERS体系的研究,并从化学成键机理和光驱电荷转移机理两个方面探讨了电化学界面SERS谱峰的频率位移和增强效应,解释了实验观测到的SERS光谱随金属电极材料、激发光波长以及电极电位变化的现象.     

内掺Sc原子的扩展三明治结构graphene-Sc-graphene的几何结构,电子性质和储氢性能研究

使用密度泛函理论中的广义梯度近似对内掺Sc原子的graphene-Sc-graphene扩展三明治结构的几何结构、电子结构和储氢性能进行计算研究. 计算发现: Sc原子位于单层石墨烯中六元环上方的结构具有较大的结合能, 但小于固体Sc的内聚能实验值(3.90 eV), 然而, 当单个Sc原子或者多个Sc原子在双层石墨烯中间与底层相距2 Å时, Sc原子与基底的结合能增加到5 eV以上, 远远大于固体Sc的内聚能实验值(3.90 eV), 因此相邻的Sc原子可以有效避免成簇. 由此可见, 三明治结构的形成明显增加了Sc原子与基底的结合强度, 该结构可以进一步储氢来满足18电子规则而更加稳定, 从而成为理想的新型储氢纳米材料. 扩展三明治结构graphene-Sc-graphene的(2×3)单元中每个Sc原子最多可以吸附2个H₂分子, 对H₂的平均吸附能分别为0.67 eV和0.54 eV, 介于物理吸附和化学吸附(0.1～0.8 eV)之间, 因此该体系可以实现常温常压下对H₂的可逆吸附. 由储氢机制分析可知: 扩展三明治结构graphene-Sc-graphene主要通过Dewar-Kubas作用进行储氢, 形成了π-δ-π型的电子结构.     

NO双分子和二聚体与Cu2作用的理论计算

采用密度泛函理论(DFT)中的B3LYP方法，在Lanl2DZ基组下，对NO双分子和二聚体与铜原子簇相互作用的结构进行了研究. 结果表明，NO可以在铜表面相邻的两个铜原子上形成稳定的双分子吸附和二聚体吸附，而在双分子吸附形式中NO以氮原子吸附在铜上的构型最稳定，且顶点吸附的稳定性不如非顶点吸附形式.在二聚体吸附形式中， N－N键被加强，而N－O键被削弱的程度大于双分子吸附形式，说明二聚体的形成有利于NO在金属铜表面的直接分解.同时电荷布居分析表明，单重态的二聚体与铜作用时，铜原子上的平均电荷达到0.66 e,说明在这种吸附形式中铜被离子化的倾向较大，而且这种吸附形式最有利于NO的分解.这些结果说明NO经二聚体形式在铜表面直接催化分解是可行的.     

TiO2负载单金属镍（铂）催化剂在甲烷解离反应中抗积碳能力的理论研究

研究碳原子在TiO2(101)负载镍或铂原子上的吸附行为对于阐明积碳问题提供了一个热力学线索.广义梯度近似密度泛函理论的PBE计算结果表明,镍在TiO2表面最稳定构型的吸附能为347.16 kJ/mol,铂对应的最稳定构型的吸附能为315.9 kJ/mol,而且2种金属的最稳定构型均处于TiO2表面2个O2c原子之间的桥位.吸附金属原子后,TiO2的态密度图中各电子峰向低能量方向移动,体系趋于稳定.从态密度图可知,碳的p轨道与金属原子的d轨道发生叠加,说明碳原子与金属原子成键,从而使吸附后Ni或Pt与O原子之间的相互作用减弱.碳原子吸附在Ni/TiO2(101)和Pt/TiO2(101)表面的最佳吸附结构的吸附能分别为474.19和570.08 kJ/mol,说明TiO2负载铂催化剂在甲烷重整反应中抗积碳能力较强.     

缺陷石墨烯吸附Au、Ag、Cu的第一性原理计算

采用基于密度泛函理论的投影缀加波方法研究了Au、Ag、Cu吸附在缺陷石墨烯单侧和双侧的体系,对吸附体系的吸附能、磁性、电荷转移和电子结构进行了计算和分析.缺陷石墨烯吸附Au、Ag、Cu体系的吸附能比本征石墨烯增加2 eV以上,说明三种金属原子更容易吸附在缺陷位置;吸附体系的电荷密度差分和电子结构的结果表明,Au、Ag、Cu与缺陷石墨烯之间均为化学吸附.计算吸附体系的磁性发现,单侧吸附时三种吸附体系均有磁性,磁矩大约为1μB;双侧吸附时,三种吸附体系磁矩大约为2μB.     

缺陷石墨烯吸附Au、Ag、Cu的第一性原理计算

采用基于密度泛函理论的投影缀加波方法研究了Au、Ag、Cu吸附在缺陷石墨烯单侧和双侧的体系,对吸附体系的吸附能、磁性、电荷转移和电子结构进行了计算和分析. 缺陷石墨烯吸附Au、Ag、Cu体系的吸附能比本征石墨烯增加2 eV以上,说明三种金属原子更容易吸附在缺陷位置;吸附体系的电荷密度差分和电子结构的结果表明,Au、Ag、Cu与缺陷石墨烯之间均为化学吸附. 计算吸附体系的磁性发现,单侧吸附时三种吸附体系均有磁性,磁矩大约为1μ_B;双侧吸附时,三种吸附体系磁矩大约为2μ_B.     

Theoretical investigation of formation mechanism of bipyridyl molecule on Ni(111) surface: implication for synthesis of N-doped graphene from pyridine

The formation mechanism of bipyridyl molecule catalyzed by nickel catalyst with pyridine precursor has been studied using density functional theory calculations. The formation of bipyridyl on Ni(111) surface from two pyridine molecules is considered as the initial process of N-doped graphene growth, and the minimum energy pathway for the formation has been investigated in detail. The whole formation processes mainly includes three steps, i.e., the dehydrogenation of the first pyridine, adsorption and dehydrogenation of the second pyridine, and formation of the bipyridyl molecule. It is found that the C-H bond of pyridine could be selectively dissociated while the C-C and C-N bond connections are retained during the catalytic processes. The N-doped graphene formed by pyridine only contains pyridine-like nitrogen atoms, suggesting a possible way to produce N-doped graphene with pure pyridine-like nitrogen atoms. The comparison of formation mechanisms between bipyridyl and biphenyl molecules was carried out, and the results imply a lower temperature process for synthesis of N-doped graphene from pyridine than that for graphene from benzene.     

Binding characteristics of pyridine on Ag(110)

A combination of low-temperature scanning tunneling microscopy and density functional theory calculations was used to determine the binding characteristics of single pyridine molecules at a low coverage on a silver surface. The results indicated that pyridine binds to silver through the nitrogen atom in either a perpendicular or a parallel configuration with the latter structure being more prevalent. Both configurations are produced predominantly through electrostatic interaction between nitrogen and silver atoms. This is induced by charge redistribution in the pyridine molecule and nearby silver atoms upon pyridine adsorption.     

双空位缺陷双层石墨烯储钠性能的第一性原理研究

采用基于密度泛函理论(DFT)的色散修正方法,研究了Na吸附和嵌入在双空位缺陷(DV)双层石墨烯(BLG)体系中的形成能、电荷转移、电极电势和扩散行为。形成能计算表明,无论单个Na原子在BLG表面吸附还是层间嵌入,均在DV空位中心处更稳定。电荷密度分布和Bader电荷计算表明Na与BLG的结合方式表现出离子性。Na嵌入DV缺陷BLG层间,缺陷浓度增加使BLG由AB堆垛向AA堆垛转变过程推迟;使Na在DV缺陷BLG的表面和层间能够稳定储钠的容量之和增至262.75 mAh?g~(-1),对应浓度Na与C摩尔比为2:17,储钠浓度继续增加,Na在BLG表面吸附容易产生枝晶或团簇。当层间嵌入Na原子时,表面Na原子向DV缺陷中心方向扩散能垒减小、表面Na原子沿相反方向的扩散能垒增加,DV缺陷的存在提高了BLG表面捕获Na的能力。     

A first principle study of adsorption of two proximate nitrogen atoms on graphene

Different possible configurations of two nitrogen‐adatoms on graphene are studied using density functional theory. Adsorption of single nitrogen atom on the bridge site of graphene is accompanied by distortion of the sheet. Electronically, this case amounts to p‐type doping. Two N atoms adsorbed on the graphene sheet can share a bond in two ways. They acquire positions either just above two adjacent carbon atoms or they form a bridge across opposite bonds of a hexagon in the sheet. Both these configurations also induce structural distortion of the sheet. Another stable configuration consists of two N atoms bonded as an N₂ molecule physisorbed on the graphene sheet. It is also possible to adsorb two N atoms on opposite sides of the graphene sheet, bonded to the same two C atoms. Moreover, two N atoms can be individually adsorbed on alternate bridge sites of neighboring hexagons experiencing a repulsion, the energy for which arises from the additional distortion of the graphene sheet. The densities of states near the Fermi level are found to be dependent on the adsorption configurations of two nitrogen atoms on graphene. Thus the electronic properties of graphene can be controlled by the selective adsorption of two nitrogen atoms. © 2014 Wiley Periodicals, Inc.     

Comparative study of Li, Na, and K adsorptions on graphite by using ab initio method

A comprehensive study has been conducted to compare the adsorptions of alkali metals (including Li, Na, and K) on the basal plane of graphite by using molecular orbital theory calculations. All three metal atoms prefer to be adsorbed on the "middle hollow site" above a hexagonal aromatic ring. A novel phenomenon was observed, that is, Na, instead of Li or K, is the weakest among the three types of metal atoms in adsorption. The reason is that the SOMO (single occupied molecular orbital) of the Na atom is exactly at the middle point between the HOMO and the LUMO of the graphite layer in energy level. As a result, the SOMO of Na cannot form a stable interaction with either the HOMO or the LUMO of the graphite. On the other hand, the SOMO of Li and K can form a relatively stable interaction with either the HOMO or the LUMO of graphite. Why Li has a relatively stronger adsorption than K on graphite has also been interpreted on the basis of their molecular-orbital energy levels.     

钇对石墨烯储氢性能的影响

应用基于密度泛函理论的第一性原理方法研究过渡金属钇（Y）修饰对石墨烯储氢性能的影响。考虑Y原子在石墨烯上易形成团簇,采用B原子掺杂有效阻止了团簇形成。通过模拟计算得到的改性体系稳定、储氢性能优异,可吸附6个H₂分子,平均吸附能范围为-0.539到-0.655 eV （per H₂）,理论上满足理想的氢吸附能范围。经Bader电荷初步计算和基于Y/B/graphene （G）体系吸附H₂分子的电子态密度及电荷差分密度图分析得,Y原子与石墨烯间通过电荷转移产生结合,与H₂分子则发生典型的Kubas型相互作用。Y原子改变了H₂分子与石墨烯基的电荷分布,成为连接两者电子云的桥梁,从而增强了H₂分子的吸附能。改性石墨烯体系吸附的均为氢分子,有利于在环境温度和压力条件下进行循环控制,是具有良好发展前景的储氢材料之一。     

Rules of Boron–Nitrogen Doping in Defect Graphene Sheets: A First‐Principles Investigation of Band‐Gap Tuning and Oxygen Reduction Reaction Catalysis Capabilities

Introduction of defects and nitrogen doping are two of the most pursued methods to tailor the properties of graphene for better suitability to applications such as catalysis and energy conversion. Doping nitrogen atoms at defect sites of graphene and codoping them along with boron atoms can further increase the efficiency of such systems due to better stability of nitrogen at defect sites and stabilization provided by B?N bonding. Systematic exploration of the possible doping/codoping configurations reflecting defect regions of graphene presents a prevalent doping site for nitrogen‐rich BN clusters and they are also highly suitable for modulating (0.2–0.9 eV) the band gap of defect graphene. Such codoped systems perform significantly better than the platinum surface, undoped defect graphene, and the single nitrogen or boron atom doped defect graphene system for dioxygen adsorption. Significant stretching of the O?O bond indicates a lowering of the bond breakage barrier, which is advantageous for applications in the oxygen reduction reaction.