空位和B掺杂对Si在石墨烯上吸附的影响

利用基于密度泛函理论的第一性原理计算了空位和B替位掺杂对Si在石墨烯上吸附的影响. 结果表明: 对完整的石墨烯结构, Si吸附在桥位最稳定, Si吸附改变了石墨烯中C原子的自旋性质; 空位和B替位掺杂均加强了Si在缺陷处的吸附, 空位对Si在石墨烯上吸附的影响相对较大; B掺杂改变了Si的稳定吸附位置(由桥位移到顶位); Si在空位和B掺杂石墨烯上吸附, 体系不具有磁性; B掺杂提高了石墨烯体系的导电性能; 单空位缺陷不易形成, 结构不稳定, B掺杂结构相对较稳定.     

缺陷石墨烯吸附Au、Ag、Cu的第一性原理计算

采用基于密度泛函理论的投影缀加波方法研究了Au、Ag、Cu吸附在缺陷石墨烯单侧和双侧的体系,对吸附体系的吸附能、磁性、电荷转移和电子结构进行了计算和分析.缺陷石墨烯吸附Au、Ag、Cu体系的吸附能比本征石墨烯增加2 eV以上,说明三种金属原子更容易吸附在缺陷位置;吸附体系的电荷密度差分和电子结构的结果表明,Au、Ag、Cu与缺陷石墨烯之间均为化学吸附.计算吸附体系的磁性发现,单侧吸附时三种吸附体系均有磁性,磁矩大约为1μB;双侧吸附时,三种吸附体系磁矩大约为2μB.     

铜族金属与完整及氮掺杂石墨烯的相互作用

基于广义梯度密度泛函理论和周期平板模型,研究了铜族金属单原子和双原子簇与完整及氮掺杂石墨烯的结合情况.结果表明,氮掺杂后石墨烯的电子结构特性由半金属性变为金属性;铜族金属在完整及石墨型氮掺杂石墨烯上的吸附较弱,结合能约为0.5eV,而在吡啶型氮掺杂和吡咯型氮掺杂石墨烯上有较强的化学吸附,结合能一般大于1eV;吡咯型氮掺杂后的构型不稳定,金属原子及簇与包含该结构的石墨烯衬底作用时会使其向吡啶型氮掺杂转变,并最终得到基于吡啶型氮掺杂的稳定吸附构型.Mulliken电荷布居分析显示,吸附在吡啶型氮掺杂石墨烯上的金属单原子与金属双原子簇带电性质相反.态密度及轨道分析表明,Cu与吡啶型氮掺杂石墨烯空位处留有悬挂键的三个原子成键,而Au与其中两个C原子成键.     

缺陷石墨烯吸附Au、Ag、Cu的第一性原理计算

采用基于密度泛函理论的投影缀加波方法研究了Au、Ag、Cu吸附在缺陷石墨烯单侧和双侧的体系,对吸附体系的吸附能、磁性、电荷转移和电子结构进行了计算和分析. 缺陷石墨烯吸附Au、Ag、Cu体系的吸附能比本征石墨烯增加2 eV以上,说明三种金属原子更容易吸附在缺陷位置;吸附体系的电荷密度差分和电子结构的结果表明,Au、Ag、Cu与缺陷石墨烯之间均为化学吸附. 计算吸附体系的磁性发现,单侧吸附时三种吸附体系均有磁性,磁矩大约为1μ_B;双侧吸附时,三种吸附体系磁矩大约为2μ_B.     

贵金属原子在CeO2(111)表面吸附的密度泛函理论研究

利用密度泛函理论系统研究了贵金属原子(Au、Pd、Pt和Rh)在CeO₂(111)表面的吸附行为。结果表明,Au吸附在氧顶位最稳定,Pd、Pt倾向吸附于氧桥位,而Rh在洞位最稳定。当金属原子吸附在氧顶位时,吸附强度依次为Pt > Rh > Pd > Au。Pd、Pt与Rh吸附后在Ce 4f、O 2p电子峰间出现掺杂峰;Au未出现掺杂电子峰,其d电子峰与表面O 2p峰在-4～-1 eV重叠。态密度分析表明,Au吸附在氧顶位、Pd与Pt吸附在桥位、Rh吸附在洞位时,金属与CeO₂(111)表面氧原子作用较强,这与Bader电荷分析结果相一致。     

PtFe掺杂石墨烯抗CO中毒性能的理论研究

基于密度泛函理论第一性原理研究了以单空位缺陷(SV)石墨烯为载体的Pt,Fe及PtFe二元金属催化剂的抗CO中毒能力.结果表明,对于单金属原子Pt和Fe,Fe更易吸附在SV石墨烯上;而对于PtFe二元金属催化剂,SV石墨烯对其固定能力明显好于Pt-SV,即Pt催化剂中掺杂Fe大大增加了SV石墨烯对金属催化剂的稳定性.Pt,Fe及PtFe二元金属催化剂抗CO中毒能力的研究结果表明,PtFe-6结构的抗CO中毒能力明显强于Pt-SV,接近于Fe-SV的抗CO中毒能力,在所有二元金属催化剂中PtFe-6的稳定性最好,明显优于Pt在SV石墨烯上的稳定性.通过在Pt中加入非贵金属Fe既可提高DMFC中阳极Pt催化剂的抗CO中毒能力,又可提高其催化活性.     

A density functional theory study of the noble metal adsorption on the CeO2(111) surface

利用密度泛函理论系统研究了贵金属原子(Au、Pd、Pt和Rh)在CeO2( 111)表面的吸附行为.结果表明,Au吸附在氧顶位最稳定,Pd、Pt倾向吸附于氧桥位,而Rh在洞位最稳定.当金属原子吸附在氧顶位时,吸附强度依次为Pt ＞Rh＞ Pd＞Au.Pd、Pt与Rh吸附后在Ce 4 f、O2p电子峰间出现掺杂峰;Au未出现掺杂电子峰,其d电子峰与表面O2p峰在-4 -1 eV重叠.态密度分析表明,Au吸附在氧顶位、Pd与Pt吸附在桥位、Rh吸附在洞位时,金属与CeO2(111)表面氧原子作用较强,这与Bader电荷分析结果相一致.     

石墨烯中的单空位缺陷对铂原子催化解离氧分子的影响

采用密度泛函理论中的B3LYP方法研究了石墨烯中的单空位缺陷对铂原子(Pt)催化解离O_2分子的影响.计算发现O_2分子首先通过[2+1]或[2+2]环加成作用吸附在以单空位缺陷石墨烯为载体的Pt上(Pt-SV),并以不同的路径进行解离,吸附能分别为-158.23和-152.45kJ/mol.由于石墨烯片上单空位缺陷的存在,O_2分子更容易吸附在单空位缺陷处的Pt上,并且O_2在Pt-SV上解离的能垒(130.25kJ/mol)也明显比在Pt-pristine上解离的能垒低(76.23kJ/mol).因此石墨烯上单空位缺陷的存在提高增加了Pt的催化能力.     

脱质子化1,3环加成石墨烯外在固定位上的贵金属纳米线(英文)

为研究纳米线的形成机理,通过密度泛函理论(DFT)研究了贵金属(铂)在脱质子化1,3-环加成石墨烯上的吸附.研究发现:(1)吸附在1,3-环加成石墨烯上的铂原子引起该结构的脱质子化过程并形成脱质子化1,3-环加成石墨烯;(2)贵金属在脱质子化1,3-环加成石墨烯上的锚定位是氮原子邻位的碳原子,这在邻位碳原子的平均巴德电荷分析(高达1.0e)中得到进一步的证实;(3)铂原子在相邻的脱质子化吡啶炔单元上形成金属纳米线,并且该纳米线比相应的铂团簇稳定得多;(4)电子结构分析表明,铂的吸附并没有从根本上改变脱质子化1,3-环加成石墨烯的电子性质.铂金属的掺杂使得Pt6团簇吸附形成的复合物呈现金属性,而Pt6纳米线形成的复合物则为半金属性.     

过渡金属替代的CeO_2(111)表面上NO+CO反应机理的理论研究(英文)

采用DFT+U方法研究了过渡金属替代的CeO2(111)表面上的NO+CO反应机理,以探求不同过渡金属对N2选择性的影响.结果表明,在反应过程中,反应活性中心由过渡金属单原子与其最近邻的氧空位组成.NO在过渡金属-氧空位上发生N–O断键,不同过渡金属上该还原步骤的难易程度不同.计算发现,右过渡金属Rh,Pd和Pt替代的CeO2(111)表面可以与吸附物之间形成较强的吸附作用,进而可以达到较高的N2选择性.其主要原因是右过渡金属具有较多的d电子,可以与吸附小分子之间形成有效的反馈键.而左过渡金属拥有较少的d电子,难以有效抓住吸附物,最终导致较低的N2选择性.     

Trapping of metal atoms in the defects on graphene

The binding of a single metal atom (Pt, Pd, Au, and Sn) nearby a single-vacancy (SV) on the graphene is investigated using the first-principles density-functional theory. On the pristine graphene (pri-graphene), the Pt, Pd, and Sn prefer to be adsorbed at the bridge site, while Au prefers the top site. On the graphene with a single-vacancy (SV-graphene), all the metal atoms prefer to be trapped at the vacancy site and appear as dopants. However, the trapping abilities of the SV-graphene are varied for different metal atoms, i.e., the Pt and Pd have the larger trapping zones than do the others. The diffusion barrier of a metal atom on the SV-graphene is much higher than that on the pri-graphene, and the Pt atom has the largest diffusion barrier from the SV site to the neighboring bridge sites. On the SV-graphene, more electrons are transferred from the adatoms (or dopants) to the carbon atoms at the defect site, which induces changes in the electronic structures and magnetic properties of the systems. This work provides valuable information on the selectivity of lattice vacancy in trapping metal atoms, which would be vital for the atomic-scale design of new metal-carbon nanostructures and graphene-based catalysts.     

Nitrogen/gold codoping of the TiO2(101) anatase surface. A theoretical study based on DFT calculations

The interaction between implanted nitrogen atoms, adsorbed gold atoms, and oxygen vacancies at the anatase TiO(2)(101) surface is investigated by means of periodic density functional theory calculations. Substitutional and interstitial configurations for the N-doping have been considered, as well as several adsorption sites for Au adatoms and different types of vacancies. Our total energy calculations suggest that a synergetic effect takes place between the nitrogen doping on one hand and the adsorption of gold and vacancy formation on the other hand. Thus, while pre-implanted nitrogen increases the adsorption energy for gold and decreases the energy required for the formation of an oxygen vacancy, pre-adsorbed gold or the presence of oxygen vacancies favors the nitrogen doping of anatase. The analysis of the electronic structure and electron densities shows that a charge transfer takes place between implanted-N, adsorbed Au and oxygen vacancies. Moreover, it is predicted that the creation of vacancies on the anatase surface modified with both implanted nitrogen and supported gold atoms produces migration of substitutional N impurities from bulk to surface sites. In any case, the most stable configurations are those where N, Au and vacancies are close to each other.     

Pt on graphene monolayers supported on a Ni(111) substrate: relativistic density-functional calculations

The structural, energetic, and magnetic properties of Pt atoms and dimers adsorbed on a Ni-supported graphene layer have been investigated using density-functional calculations, including the influence of dispersion forces and of spin-orbit coupling. Dispersion forces are found to be essential to stabilize a chemisorbed graphene layer on the Ni(111) surface. The presence of the Ni-substrate leads not only to a stronger interaction of Pt atoms and dimers with graphene but also to a locally increased binding between graphene and the substrate and a complex reconstruction of the adlayer. The stronger binding of the dimer also stabilizes a flat adsorption geometry in contrast to the upright geometry on a free-standing graphene layer. These effects are further enhanced by dispersion corrections. Isolated Pt adatoms and flat dimers are found to be non-magnetic, while an upright Pt dimer has strongly anisotropic spin and orbital moments. For the clean C/Ni(111) system, we calculate an in-plane magnetic anisotropy, which is also conserved in the presence of isolated Pt adatoms. Surprisingly, upright Pt-dimers induce a re-orientation of the easy magnetic axis to a direction perpendicular to the surface, in analogy to Pt(2) on a free-standing graphene layer and to the axial anisotropy of a gas-phase Pt(2) dimer.     

Probe microscope observation of platinum atoms deposited on the TiO2(110)-(1 x 1) surface

Titanium dioxide (TiO2) (110) surfaces with Pt adatoms were examined using a noncontact atomic force microscope (NC-AFM) and a Kelvin probe force microscope (KPFM). Topographic images with NC-AFM identify Pt atoms adsorbed at three different sites. These sites are on the Ti atom rows, on the O atom rows, and in O atom vacancies. Most Pt adatoms were observed on Ti atom rows. Successively recorded images show that the Pt adatoms on Ti atom rows (adatoms A) and O atom rows (adatoms C) are mobile while the adatoms in the O atom vacancies (adatoms B) are not. Adatoms A and adatoms B were identified in KPFM images. However, adatoms C were not visualized in KPFM images because they moved quickly or were swept out by the tip. The KPFM measurements reveal that the work function on adatoms A are lower than that on the surrounding (1 x 1) surface by 0.24 eV whereas adatoms B reduced the work function by 0.26 eV. The work function decrease is interpreted with an electric dipole moment directed toward the vacuum, as a result of electron transfer from the adatoms to the TiO2 substrate. In an O atom vacancy, the adatom B is in contact with two Ti atoms and therefore the electron transfer can be enhanced.     

DFT Study of Metal Atoms Adsorbed at Low-coordinated Sites of MgO （001） Surface

1 INTRODUCTION The interfaces between metals and oxide play a vital role in many industrial applications: hetero- geneous catalysis, microelectronics, thermal barriers, corrosion protection, metal processing and so on[1]. In catalysis, the choice of metal and oxide support is critical in order to obtain a desired reactivity and selectivity[2]. This is due in part to the inherent reac- tivity of the two components. Also the size and shape of the metal particle, which depend on the choice…     

Ag(111)表面Ag配位结构的分等级组装

表面辅助的金属有机纳米结构因其结构稳定性和潜在应用受到广泛关注。在金属有机纳米结构中,金属原子来源于外部沉积的金属或金属表面原子。外部沉积的金属原子种类多样,取决于目标纳米结构。然而,金属表面原子受限于表面科学常用的金、银和铜单晶金属表面。金属有机纳米结构大多包括Au配位或是Cu配位结构,而只有少量的用表面Ag原子构成。分子金属相互作用的进一步研究有助于预期纳米结构的精确控制形成。至于构建基元,有机分子通过M―C、M―N和M―O键与表面金属原子配位。末端炔反应或者乌尔曼耦合能够实现C―M―C节点的形成。Cu和Au原子能够与含有末端氰基或吡啶基官能团的分子配位形成N―M―N键。另外,表面Ag增原子能够通过Ag―N配位键与酞菁分子配位。然而,M―O配位键的相关研究较少。因此,我们计划使用末端羟基分子与Ag增原子配位形成金属有机配位纳米结构去研究O―Ag节点。我们通过扫描隧道显微镜利用4, 4’-二羟基-1, 1’: 3’, 1’’-三联苯分子(4, 4’-dihydroxy-1, 1’: 3’, 1’’-terphenyl,H3PH)和Ag增原子成功构筑了一系列二维有序纳米结构。在室温下,蒸镀的H3PH分子自组装形成由环氢键连接的密堆积结构。当退火温度提升到330 K,一种新的纳米结构出现了,该结构由O―Ag配位键和氢键共同作用形成。进一步地提升退火温度至420 K,蜂巢结构和共存的二重配位链出现,这两种结构中仅由O―Ag―O键构成。为分析金属分子反应路径和O―Ag―O键的能量势垒,我们对该体系进行密度泛函理论计算。计算结果显示,O―Ag键形成的能量势垒是1.41 eV,小于O―Ag―O节点1.85 eV的能量势垒。这也解释了分等级金属-有机纳米结构形成的原因。我们的实验结果提供了一种利用有机小分子和金属增原子来设计和构筑分等级二维纳米结构的有效方法。     

Attractive interaction between transition-metal atom impurities and vacancies in graphene: a first-principles study

We present a density functional theory study of transition metal adatoms on a graphene sheet with vacancy-type defects. We calculate the strain fields near the defects and demonstrate that the strain fields around these defects reach far into the unperturbed hexagonal network and that metal atoms have a high affinity to the non-perfect and strained regions of graphene. Metal atoms are therefore attracted by the reconstructed defects. The increased reactivity of the strained graphene makes it possible to attach metal atoms much more firmly than to pristine graphene and supplies a tool for tailoring the electronic structure of graphene. Finally, we analyze the electronic band structure of graphene with defects and show that some defects open a semiconductor gap in graphene, which may be important for carbon-based nanoelectronics.