制备失水山梨醇单油酸酯的选择性酯化反应研究

研究了几种酸性催化剂(H2SO4、H3PO4、CH3C6H4SO3H)、碱性催化剂(NaOH、Na2CO3、NaHCO3)和氧化物(ZnO、Al2O3、TiO2)对山梨醇和油酸的催化酯化反应.结果表明用酸性催化剂催化的酯化反应产品中的双油酸酯的比例较高;用碱性催化剂或氧化物催化剂催化的酯化反应产品中的单油酸酯的比例较高,其中用ZnO催化所得产品中的单油酸酯的比例可达91%.     

Na2B4O7-Na2CO3-NaHCO3-NaBO2-H2O四元体系的等温溶度

测定了四元体系Na2B4O7 Na2CO3 NaHCO3 NaBO2 H2O在25 、 35及45 ℃时的等温溶度和饱和溶液的折光率,绘制了相应的溶度图和组成 折光率图.体系在35和45 ℃时有异成分化合物－天然碱（Na2CO3•NaHCO3•2H2O）生成.这些结果有助于揭示含硼碱湖的固体盐矿成因,对有关盐卤存在的反应2Na2CO3＋Na2B4O7＋H2O=4NaBO2＋2NaHCO3,揭示了相化学规律.     

“制取碳酸钠实验”的体会

根据氨碱法制纯碱的反应： NaCl+NH3+CO2+H2O NaHCO3+NH4Cl 2NaHCO3=Na2CO3+CO2↑+H2O 关键是第一步反应,如何制取NaHCO3。     

不同沉淀剂对Co3O4催化剂催化分解N2O活性的影响

采用了不同沉淀剂（K2 CO3、Na2 CO3、NaOH、NaHCO3）制备了一系列 Co3 O4氧化物催化剂。通过 XRD、XPS、BET、H2-TPR、O2-TPD 表征手段,探究了催化剂物相结构和氧化还原性能对 N2 O 催化分解性能的影响。研究表明,以 K2 CO3为沉淀剂制备的 Co3 O4催化剂具有优越的氧化还原性能。此外,较低结晶度有助于提高催化剂的催化性能,催化剂表面物种与其沉淀剂相关：丰富的表面 Co 物种促进催化活性,较多氧空位有利于催化剂表面的电子传递和氧气的脱附。以 K2 CO3为沉淀剂制备的 Co3 O4催化剂表现出最佳的 N2 O 催化分解活性,在450℃达到90％以上的转化率。     

Al_2_O3·Na_2O·xH_2O/NaOH/Al(OH)_3催化剂催化木质素水蒸气气化制氢研究(英文)

考察了催化剂Al2O3.Na2O.xH2O/NaOH/Al(OH)3催化木质素水蒸气气化制氢及其影响因素。结果表明,木质素气化的产氢速率随Na2O/C比值的升高而升高;木质素在较低的温度下气化时,较高的水蒸气流速有利于抑制CO和CO2的生成。产氢速率随水蒸气流速的增大而增大。催化剂中的铝酸钠水合物受热分解产生的水可导致催化剂中的NaOH组分产生更多的Na+和OH-离子。更多的Na+和OH-离子可使木质素中C—H键的键能更显著的降低。木质素在473 K~973 K气化的氢转化程度可达134.94%,这表明催化剂Al2O3.Na2O.xH2O/NaOH/Al(OH)3对木质素低温水蒸气气化制氢具有较好的催化活性。     

五元交互体系Li+,Na+,K+//CO2-3,Cl--H2O在298.15 K的相平衡研究

针对西藏扎布耶盐湖卤水组成, 采用等温溶解平衡法研究了五元交互体系Li+, Na+, K+// CO2-3, Cl--H2O 于298.15 K时的相平衡, 并绘制了相图(空间立体图和Li2CO3饱和的投影图). 结果表明, 该五元体系相图含有7个结晶区、 13条单变量线和4个无变量点. 7个结晶区由6个单盐结晶区和1个复盐结晶区组成, 分别为LiCl*H2O, NaCl, KCl, Li2CO3, K2CO3*3/2H2O, Na2CO3*10H2O和NaKCO3*6H2O, 没有形成固溶体和天然碱(Na2CO3*NaHCO3*2H2O). 4个无变量点标记成K1, K2, K3和K4, 所对应的平衡固相盐分别是: Li2CO3+NaKCO3*6H2O+Na2CO3*10H2O+KCl, Li2CO3+NaKCO3*6H2O+K2CO3*3/2H2O+KCl, Li2CO3+NaCl+KCl+LiCl*H2O和Li2CO3+NaCl+Na2CO3*10H2O+KCl.     

五元交互体系Li+,Na+,K+//CO32-,Cl--H2O在298.15K的相平衡研究

针对西藏扎布耶盐湖卤水组成,采用等温溶解平衡法研究了五元交互体系Li+,Na+,K+//CO32-,Cl--H2O于298.15K时的相平衡,并绘制了相图(空间立体图和Li2CO3饱和的投影图).结果表明,该五元体系相图含有7个结晶区、13条单变量线和4个无变量点.7个结晶区由6个单盐结晶区和1个复盐结晶区组成,分别为LiCl·H2O,NaCl,KCl,Li2CO3,K2CO3·3/2H2O,Na2CO3·10H2O和NaKCO3·6H2O,没有形成固溶体和天然碱(Na2CO3·NaHCO3·2H2O).4个无变量点标记成K1,K2,K3和K4,所对应的平衡固相盐分别是:Li2CO3+NaKCO3·6H2O+Na2CO3·10H2O+KCl,Li2CO3+NaKCO3·6H2O+K2CO3·3/2H2O+KCl,Li2CO3+NaCl+KCl+LiCl·H2O和Li2CO3+NaCl+Na2CO3·10H2O+KCl.     

化学镀镍体系次亚磷酸钠氧化中间产物的ESR研究

化学镀镍是借助 Na H2 PO2 在具有催化活性金属表面的阳极氧化将溶液中的镍离子还原成金属镍 .伴随镍的沉积 ,表面同时有氢气析出 .同位素研究表明 [1,2 ] ,析出的氢气一部分为溶液中 H+或 H2 O的阴极还原 ,另一部分来自 Na H2 PO2 的阳极氧化过程 .Meerakker等[3～ 5 ] 认为 ,Na H2 PO2 的氧化经历了H2 PO-2 H+ HPO-.2 异相前置转化步骤 ,HPO-.2 阴离子自由基发生阳极氧化的同时伴有 H复合生成氢气过程 .而另一些研究者 [6～ 8] 认为 ,Na H2 PO2 的氧化过程为 H2 PO-2 + H2 O H2 PO-3 + 2 H,仅有 H自由基生成 ,并不产生 H…     

刻蚀剂对IrO_2-MnO_2阳极纳米涂层表面形貌及电化学行为的影响

采用传统热分解法制得了不同刻蚀剂(HCl、H2SO4、C2H2O4和HF)处理的Ti基Ir O2-Mn O2纳米涂层阳极,使用场发射扫描电子显微镜(FESEM)、循环伏安(CV)及极化技术等观察和研究各纳米涂层阳极表面形貌及其电化学性能.结果表明,与HCl和C2H2O4刻蚀剂相比,HF和H2SO4刻蚀的基底涂层表面Ir O2纳米颗粒更为密集且尺寸更大;H2SO4刻蚀处理的Ti基Ir O2-Mn O2阳极电催化活性最佳,HF次之,C2H2O4再次之,HCl最差.     

钯催化溴代水杨醛与吡啶硼酸的Suzuki交叉偶联反应

通过研究不同种类钯催化剂[Pd(dppf)2Cl2,Pd(OAc)2,Pd(PPh3)4]、碱(Na2CO3,Na HCO3,K2CO3,K3PO4,Cs2CO3,Cs F)、溶剂(DME/H2O,DMF/H2O,Dioxane/H2O)及温度(70,80,100℃)对5-溴-3-叔丁基水杨醛与吡啶-4-硼酸制备5-(4-吡啶)-3-叔丁基水杨醛化合物的Suzuki偶联反应的影响,开发出一种高效催化吸或供电子基取代的芳基硼酸与吸电子基取代的溴代芳烃的偶联反应的方法,该反应在Pd(PPh3)4,K2CO3,Dioxane/H2O(V∶V=4∶1)、80℃的条件下产率达到97%,且具有分离简单、重现性好的特征;但对供电子基取代的溴代芳烃参与的反应催化效果一般.     

电化学微/纳加工分辨率的影响因素及对策

The etching resolution of electrochemical fabrication technique is influenced significantly by the diffusion layer of the etchant. It has been shown that a fast etching rate can achieve higher etching resolution due to so-called heterogeneous scavenging effect, while a lower etching rate will result in rather lower etching resolution. For the latter case, the confined etchant layer technique(CELT) has been employed to improve the etching resolution. i. e., a certain redox couple which can consume the etchant homogeneously and rapidly was added to the solution. The homogeneous scavenging effect confined the etchant within a narrow layer around the electrode surface and much improved etching resolution was achieved. Using the CELT and a needle-shaped microelectrode, an etching spot of several micro-meters was obtained at silicon wafer surface.     

不同形貌的金字塔结构对硅片表面钝化和异质结太阳电池的影响

在晶体硅表面沉积本征非晶硅层的异质结(SHJ)太阳电池以其高效率、高稳定性、低成本和低温制备等诸多优势被人们广泛关注.在晶体硅衬底表面制绒,是提高太阳电池效率的有效途径之一.本文采用四甲基氢氧化铵(TMAH)在硅片表面制备了不同形貌的金字塔结构的硅异质结电池衬底,并应用到电池中.通过研究不同金字塔的形貌,光学特性以及电学特性,找出提高硅片钝化效果,改善异质结电池的性能的优化的金字塔结构.结果表明:2%(w)TMAH,10%(w)异丙醇(IPA)可以在硅片表面制得标准四面体金字塔结构.和其它两种金字塔结构相比较,标准四面体金字塔结构绒面衬底反射率最低,可以提高太阳电池的短路电流密度(Jsc).同时,这种结构金字塔形貌可以提高钝化效果,改善电池各项性能参数.     

不同形貌的金字塔结构对硅片表面钝化和异质结太阳电池的影响

在晶体硅表面沉积本征非晶硅层的异质结（SHJ）太阳电池以其高效率、高稳定性、低成本和低温制备等诸多优势被人们广泛关注. 在晶体硅衬底表面制绒,是提高太阳电池效率的有效途径之一. 本文采用四甲基氢氧化铵（TMAH）在硅片表面制备了不同形貌的金字塔结构的硅异质结电池衬底,并应用到电池中. 通过研究不同金字塔的形貌,光学特性以及电学特性,找出提高硅片钝化效果,改善异质结电池的性能的优化的金字塔结构. 结果表明：2%（w）TMAH,10%（w）异丙醇（IPA）可以在硅片表面制得标准四面体金字塔结构. 和其它两种金字塔结构相比较,标准四面体金字塔结构绒面衬底反射率最低,可以提高太阳电池的短路电流密度（J_sc）. 同时,这种结构金字塔形貌可以提高钝化效果,改善电池各项性能参数.     

优化金属辅助法腐蚀液组分制备多孔硅

金属辅助化学腐蚀法可以在无外加电路的条件下,在40%HF/30%H2O2/乙醇的混合溶液中完成多孔硅的制备,该方法简单快速。本文研究了金属辅助法腐蚀液体系各组分(HF、H2O2、乙醇)含量对多孔硅表面的SiHx成分和多孔层结构的影响,根据Si-H和Si-O的红外吸收峰强度的变化曲线优化了腐蚀液体系中各组分含量。在腐蚀液各组分体积比为V40%HF∶V30%H2O2∶V乙醇=2∶2∶1和腐蚀时间为4 min的条件下制备了形貌均匀、化学活性(SiHx成分)和多孔结构稳定性较好的多孔硅,并对金属辅助法与阳极蚀刻法制得的两种多孔硅进行比较,结果显示金属辅助法制备的多孔硅的化学活性和稳定性在后续的生物技术应用中具有明显的优越性。     

Determination of metallic impurities in a silicon wafer by local etching and electrothermal atomic absorption spectrometry.

An etching technique for the determination of the metallic impurities distribution in silicon wafers has been developed. An area of 10 mmphi and 10 microm depth was etched by 100 microL of an etching solution with a HF and HNO3 mixture. The acid matrix was evaporated on the wafer surface by IR lamp illumination and vacuum exhaust. Metallic impurities remaining on the wafer surface were redissolved into the collection solution, which was measured by electrothermal atomic absorption spectrometry (ET-AAS). The recovery invested by local etching/ET-AAS was within 95 - 112% for Fe, Cu and Ni. The detection limit (3sigma) for Fe, Cu and Ni in silicon was 1 x 10(13) atoms/cm3. To confirm the applicability, local etching was applied to evaluate the effects of metallic impurities in a gettering study and the electronic properties of semiconductor devices. It was found that local etching is a useful sample preparation technique for the analysis of metallic impurities in a specific area on a silicon wafer.     

Chemical etching of silicon: Smooth, rough, and glowing surfaces

Scanning Force Microscope images of silicon surface morphology are presented for samples exposed to various oxidizing environments followed by oxide removal. These are contrasted with samples exposed to HNO₃/HF solutions. The former samples consistently produced surface roughness on the order of a few nanometers, while the latter solution exhibited surface roughness of several hundred to over a thousand nanometers. This rough surface is photoluminescent and is known as porous silicon. Careful observation of the onset of the reaction (which is proceeded by a concentration dependent induction period) suggests that the reaction mechanism is autocatalytic; some etchant product species catalyzes the further attack of the surface. Surface features of co-existing fluorescing and non-fluorescing regions emphasize the heavy etching present in the porous silicon region. Local control of the porous silicon formation by a photoinduced etching process is reported for the first time suggesting the possibility of a non-resist lithographic procedure.     

A light detection cell to be used in a micro analysis system for ammonia

This paper describes the design, realization and characterization of a micromachined light detection cell. This light detection cell is designed to meet the specifications needed for a micro total analysis system in which ammonia is converted to indophenol blue. The concentration of indophenol blue is measured in a light detection cell. The light detection cell was created using KOH/IPA etching of silicon. The KOH/IPA etchant was a 31 wt.% potassium hydroxide (KOH) solution with 250 ml isopropyl alcohol (IPA) per 1000 ml H(2)O added to it. The temperature of the solution was 50 degrees C. Etching with KOH/IPA results in 45 degrees sidewalls ({110} planes) which can be used for the in- and outcoupling of the light. The internal volume of the realized light detection cell is smaller than 1 mul, enabling measurements on samples in the order of only 1 mul. Measurements were performed on indophenol blue samples in the range of 0.02 to 50 muM. In this range the measurements showed good reproducibility.     

A model of the mechanism of the chemical interaction of the etchant ion (HF<Subscript>2</Subscript>)<Superscript>–</Superscript> with silicon during its electrochemical etching in hydrofluoric acid solutions

A model was proposed for the mechanism of the chemical interaction of the etchant ion (HF₂)^– with silicon during its electrochemical etching, which explains the possibility of porous silicon etching in the dark and the formation of hydride and hydroxyl groups on the silicon surface.     

Fabrication of nanostructured silicon by metal-assisted etching and its effects on matrix-free laser desorption/ionization mass spectrometry

A matrix-free, high sensitivity, nanostructured silicon surface assisted laser desorption/ionization mass spectrometry (LDI-MS) method fabricated by metal-assisted etching was investigated. Effects of key process parameters, such as etching time, substrate resistance and etchant composition, on the nanostructured silicon formation and its LDI-MS efficiency were studied. The results show that the nanostructured silicon pore depth and size increase with etching time, while MS ion intensity increases with etching time to 300 s then decreases until 600 s for both low resistance (0.001–0.02 Ω cm) and high resistance (1–100 Ω cm) silicon substrates. The nanostructured silicon surface morphologies were found to directly affect the LDI-MS signal ion intensity. By characterizing the nanostructured silicon surface roughness using atomic force microscopy (AFM) and sample absorption efficiency using fluorescence microscopy, it was further demonstrated that the nanostructured silicon surface roughness was highly correlated to the LDI-MS performance.     

A comparative study on electrochemical micromachining of n-GaAs and p-Si by using confined etchant layer technique

The confined etchant layer technique has been applied to achieve effective three-dimensional (3D) micromachining on n-GaAs and p-Si. This technique operates via an indirect electrochemical process and is a maskless, low-cost technique for microfabrication of arbitrary 3D structures in a single step. Br(2) was electrogenerated at the mold surface and used as an efficient etchant for n-GaAs and p-Si; l-cystine was used as a scavenger, for both substrates. The resolution of the fabricated microstructure depended strongly on the composition of the electrolyte, and especially on the concentration ratio of l-cystine to Br(-). A well-defined, polished Pt microcylindrical electrode was employed to examine the deviation of the size of the etched spots from the real diameter of the microelectrode. The thickness of the confined etchant layer can be estimated, and thus the composition of the electrolyte can be optimized for better etching precision. The etched patterns were approximately negative copies of the mold, and the precision of duplication could reach the micrometer level for p-Si and the submicrometer level for n-GaAs. Although the same etchant (Br(2)) and scavenger (l-cystine) were used in the etching solutions for GaAs and Si, the etching process, or mechanism, is completely different in the two cases. Compared with the fast etching process on GaAs in an etching solution with a concentration ratio of 3:1 of l-cystine to Br(-), the concentration ratio needs to be 50:1 for etching of Si. For the micromachining of Si, the addition of a cationic surfactant (cetyltrimethylammonium chloride, CTACl) is necessary to reduce the surface tension of the substrate and hence reduce the influence of evolution of the byproduct H(2). The function of the surfactant CTACl in comparison with an anionic surfactant (sodium dodecyl sulfate) was studied in contact-angle experiments and micromachining experiments and then is discussed in detail.