| 优化金属辅助法腐蚀液组分制备多孔硅 |
| |
| 引用本文： | 王 冲,周小会,韩焕美,鄢 琴,肖守军.优化金属辅助法腐蚀液组分制备多孔硅[J].无机化学学报,2011,27(12):2332-2338. |
| |
| 作者姓名： | 王 冲 周小会 韩焕美 鄢 琴 肖守军 |
| |
| 作者单位： | 南京大学化学化工学院,配位化学国家重点实验室,南京210093 |
| |
| 基金项目： | 国家自然科学基金，东南大学开放课题资助项目 |
| |
| 摘 要： | 金属辅助化学腐蚀法可以在无外加电路的条件下,在40%HF/30%H2O2/乙醇的混合溶液中完成多孔硅的制备,该方法简单快速。本文研究了金属辅助法腐蚀液体系各组分(HF、H2O2、乙醇)含量对多孔硅表面的SiHx成分和多孔层结构的影响,根据Si-H和Si-O的红外吸收峰强度的变化曲线优化了腐蚀液体系中各组分含量。在腐蚀液各组分体积比为V40%HF∶V30%H2O2∶V乙醇=2∶2∶1和腐蚀时间为4 min的条件下制备了形貌均匀、化学活性(SiHx成分)和多孔结构稳定性较好的多孔硅,并对金属辅助法与阳极蚀刻法制得的两种多孔硅进行比较,结果显示金属辅助法制备的多孔硅的化学活性和稳定性在后续的生物技术应用中具有明显的优越性。
|
| 关 键 词： | 多孔硅 金属辅助化学腐蚀法 腐蚀液 红外光谱 |
Optimization of Metal-Assisted Etchant Components for Fabrication of Porous Silicon |
| |
| WANG Chong,ZHOU Xiao-Hui,HAN Huan-Mei,YAN Qin and XIAO Shou-Jun.Optimization of Metal-Assisted Etchant Components for Fabrication of Porous Silicon[J].Chinese Journal of Inorganic Chemistry,2011,27(12):2332-2338. |
| |
| Authors: | WANG Chong ZHOU Xiao-Hui HAN Huan-Mei YAN Qin and XIAO Shou-Jun |
| |
| Institution: | State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093, China,State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093, China,State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093, China,State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093, China and State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093, China |
| |
| Abstract: | A simple and non-electrode etching method,metal-assisted chemical etching,was used to prepare porous silicon.In this report,we investigated the influence of a series of concentrations of HF,H2O2 and EtOH in surface SiHx species and the structure of porous layer.According to the curve of infrared absorption intensity of Si-H and Si-O against concentration of individual etchant component,we optimized the etching conditions for preparing porous silicon with uniform morphology,surface chemical reactivity,and go... |
| |
| Keywords: | porous silicon metal-assisted chemical etching etchant solution FTIR |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《无机化学学报》浏览原始摘要信息 |
| 点击此处可从《无机化学学报》下载免费的PDF全文 |
|
