过渡金属掺杂SnO_2的电子结构与磁性

采用密度泛函理论及赝势平面波方法,对未掺杂SnO_2以及过渡金属V、Cr、Mn掺杂SnO_2的超原胞体系进行了几何优化,计算了晶格常数、电子结构与磁学性质.结果表明,6.25%与12.5%两种掺杂浓度时,体系的电子自旋和磁学性质没有发生很大的变化;相对于未掺杂SnO_2,过渡金属掺杂后SnO_2中O原子有向过渡金属移动的趋势,并使得O与掺杂金属之间键长变短;在V和Cr掺杂后,SnO_2具有半金属性质,而Mn掺杂SnO_2没有发现上述性质.6.25%与12.5%的杂质浓度对自旋和磁矩影响不大,掺杂产生的磁矩主要来自于过渡金属3d电子态,且磁矩的大小与过渡金属的电子排布有关.V、Cr、Mn掺杂SnO_2后的总磁矩分别为0.94μ_B、2.0μ_B、3.00μ_B.磁矩主要来源于过渡金属3d轨道的自旋极化,当O原子出现负磁矩的时候,还有很小一部分磁矩来源于临近过渡金属的Sn原子.     

几种纤锌矿相半金属铁磁体磁学性能的第一原理研究

通过基于密度泛函理论的第一原理计算,优化了纤锌矿结构的化合物TmZn15S16(Tm=V,Cr,Mn)的几何结构,并研究了它们的磁学性能.结果表明:TmZn15S16均为典型的半金属铁磁体,它们的超胞磁矩分别为3.0099μB,3.9977μB和5.0092μB;这些磁矩主要来源于被掺入的过渡元素;CrZn15S16的半金属特性比VZn15S16和MnZn15S16更稳定;这些半金属铁磁体的半金属带隙均比较宽,表明它们可能具有较高的居里温度;TmZn15S16中杂质过渡离子的电子结构分别为V:eg2↑t12g↑,Cr:eg2↑t22g↑和Mn:eg2↑t32g↑.     

过渡元素掺杂Fe_3O_4(001)表面磁电性能的理论研究

采用基于密度泛函理论的第一性原理方法,计算Fe_3O_4,Fe_3O_4(001)表面以及过渡元素掺杂表面的电子结构和磁性。结果表明Fe_3O_4的半金属性主要来源于B位Fe离子,并且Fe的3d轨道发生强烈自旋极化;比较(001)表面不同终端A和B终端的表面能和电子结构,得出两种终端稳定性存在差异且A终端较稳定同时表现半金属性;由过渡元素V、Cr、Mn、Co、Cu和Zn取代Fe_3O_4(001)表面A终端A位Fe进行掺杂,形成的6种新表面结构都保持了半金属性。对比它们的表面能和磁矩,Mn掺杂的表面结构最稳定并且磁矩明显增大。     

过渡金属元素Sc、Cr和Mn对Mg2Ge掺杂的第一性原理研究

基于密度泛函理论(DFT)的第一性原理计算,研究了过渡金属元素Sc、Cr和Mn掺杂对Mg₂Ge晶体光、电、磁性质的影响。结果表明,Sc掺杂能使Mg₂Ge的费米能级进入导带,呈n型简并半导体;Cr和Mn掺杂能使Mg₂Ge能带结构和态密度在费米能级附近产生自旋劈裂而形成净磁矩,表现为半金属磁体和稀磁半导体,体系净磁矩均来自杂质原子3d轨道电子及其诱导极化的Ge4p态和Mg2p态自旋电子。与本征Mg₂Ge相比,掺杂体系静态介电常数增大,扩展了吸收光谱,提升了近红外光波段吸收能力。     

(Pt_nMn)~(±,0)(n=1～5)掺杂团簇结构与磁性的密度泛函研究

采用密度泛函理论(Demity Function Theory)中的B3LYP方法,在Lanl2dz赝势基组水平上对(PtnMn)±,0(n=1～5)团簇的几何构型进行了全优化,并对基态的能级以及磁性进行了研究.结果表明:PtMn掺杂团簇的自旋多重度比较高,这种性质跟纯Mn团簇相似.并且发现一般情况下Mn原子参与成键数越多,结构越稳定,在成键数相同的情况下,成键的平均键长越短越稳定;其次(PtnMn)±,0团簇的所有稳定结构都表现为铁磁性耦合;掺杂一个Mn原子后的团簇磁性大大增强,磁矩主要来源于未满的d壳层电子,且Mn原子上的局域磁矩远大于Pt原子.随着Pt原子个数的增加,Mn原子的局域磁矩变化不大,但团簇的总磁矩渐渐增大.     

基于第一性原理的Mn-AlN和Cr-AlN的半金属性质

基于密度泛函理论(DFT)的第一性原理方法,在广义梯度近似(GGA)下研究了纤锌矿Mn-AlN和Cr-AlN的能带结构、态密度与磁学等性质.结果表明,Mn-AlN和Cr-AlN的半金属能隙都随着杂质浓度的增大而减小.原因可能是随着Mn/Cr掺杂浓度的增大,杂质原子间相互作用增强,Mn/Cr 3d与N 2p杂化减弱,使得自旋交换劈裂变小,从而半金属能隙变窄.在同等掺杂浓度下,Mn-AlN比Cr-AlN的半金属能隙大.这是因为Mn 3d态能级比Cr 3d态能级低,Mn 3d与N 2p杂化更强,导致自旋交换劈裂更大,自旋向下子带的导带底相对远离费米能级,因此Mn-AlN的半金属能隙较大.     

过渡金属原子X (X=Mn、Fe、Co)掺杂单层Janus WSSe的第一性原理研究

二维Janus WSSe作为一种新兴的过渡金属硫族化合物(TMDs)材料,由于其打破了面外镜像对称性,且具有内在垂直压电和强Rashba自旋轨道耦合效应等丰富的物理特性,在自旋电子器件中具有巨大的应用潜力。本文基于密度泛函理论的第一性原理平面波赝势方法计算了过渡金属原子X(X=Mn、Fe、Co)掺杂单层Janus WSSe的电子结构、磁性和光学性质。结果表明：在Chalcogen-rich(硫族元素为多数元素)条件下的掺杂比在W-rich(钨元素为多数元素)条件下的掺杂展现出更高的稳定性,且掺杂后所有体系均表现出磁性。值得一提的是,对该体系进行Mn掺杂后,自旋向上通道出现杂质能级,WSSe由原来的非磁性半导体转变成磁矩为1.043μ_B的铁磁性半金属。而Fe、Co的掺杂使得自旋向上通道和自旋向下通道均出现杂质能级,呈现出磁矩分别为1.584μ_B、2.739μ_B的金属性。此外,掺杂体系的静态介电常数都显著增加,极化程度增强,且介电函数虚部和光吸收峰都发生了红移,说明掺杂有利于对可见光的吸收。     

O掺杂MgF2电子结构和光学性质的第一性原理研究

基于密度泛函理论(DFT)的第一性原理平面波超软赝势方法,计算了O原子不同比例(12.5％,8.33％和6.25％)掺杂MgF2晶体的几何结构、电子结构和光学性质.通过对比发现,由于O原子的掺入,体系的禁带宽度减小,材料呈现半金属性.计算也表明,O掺杂对静态介电常数和光吸收系数有重要调制作用,同时也给出了体系性质变化的...     

过渡元素掺杂Fe3O4（001）表面磁电性能的理论研究

采用基于密度泛函理论的第一性原理方法,计算Fe₃O₄,Fe₃O₄（001）表面以及过渡元素掺杂表面的电子结构和磁性。结果表明Fe₃O₄的半金属性主要来源于B位Fe离子,并且Fe的3d轨道发生强烈自旋极化;比较（001）表面不同终端A和B终端的表面能和电子结构,得出两种终端稳定性存在差异且A终端较稳定同时表现半金属性;由过渡元素V、Cr、Mn、Co、Cu和Zn取代Fe₃O₄（001）表面A终端A位Fe进行掺杂,形成的6种新表面结构都保持了半金属性。对比它们的表面能和磁矩,Mn掺杂的表面结构最稳定并且磁矩明显增大。     

锂离子电池正极材料LiNi0.5Mn1.5O4金属掺杂的第一性原理研究

近来尖晶石相LiNi0.5Mn1.5O4被认为是一种有前景的二次锂离子电池正极材料.但是其相对较差的循环性能和倍率性能限制了LiNi0.5Mn1.5O4的大规模应用.金属掺杂被认为是一种提高其电化学性能的有效方法.然而,还急需深层次地理解掺杂对材料结构和电化学性质的影响.采用第一性原理方法,系统地研究了金属掺杂的LiM0.125Ni0.375Mn1.5O4(M为Cr,Fe和Co)电极体系的结构与电子性质.计算结果显示,少量的过渡金属M取代LiNi0.5Mn1.5O4晶格中的Ni,能够有效抑制材料在电化学脱嵌锂过程中的体积变化(从锂化相到脱锂相,体积变化率约为4%,而未掺杂的情况为4.7%),提高材料循环性能.体系态密度表明金属掺杂能够减小体系的带隙,进而提高材料的电子传导.另外,通过Li离子的扩散计算,我们发现与未掺杂的LiNi0.5Mn1.5O4相比,Co掺杂使得Li在材料中两条不同扩散路径的扩散能垒分别降低了约90 meV和140 meV,表明Co掺杂有利于Li在材料中的快速扩散.     

Theoretical study of the geometric and electronic structure of neutral and anionic doped silver clusters, Ag5X with X = Sc, Ti, V, Cr, Mn, Fe, Co, and Ni

Density functional theory (DFT) has been applied to investigate the low-lying electronic states of neutral and anionic transition metal doped silver clusters Ag₅X^0,− with X = Sc, Ti, V, Cr, Mn, Fe, Co, and Ni using the B3LYP functional with the Stuttgart SDD basis sets. The structural features, frontier orbital energy gaps (HOMO and LUMO), vertical detachment energies, and vertical and adiabatic electronic affinities are evaluated. For all doped silver clusters, both in neutral and anionic states, two-dimensional and three-dimensional low-energy isomers are found to coexist. For neutral clusters, dopant Sc, Ti, V, and Mn atoms largely decrease the frontier orbital energy gaps, while they are markedly increased by Sc and Fe atoms in the anionic clusters. A completely quenched dopant magnetic moment is found in Ag₅Sc, while high spin magnetic moments are located on the other dopant atoms in Ag₅X^0,−.     

Electronic and magnetic properties of all 3d transition‐metal‐doped ZnO monolayers

Stable geometries, electronic structures, and magnetic properties of the ZnO monolayer doped with 3d transition‐metal (TM) (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, and Cu) atoms substituting the cation Zn have been investigated using first‐principles pseudopotential plane wave method within density functional theory (DFT). It is found that these nine atomic species can be effectively doped in the ZnO monolayer with formation energies ranging from ?6.319 to ?0.132 eV. Furthermore, electronic structures and magnetic properties of ZnO monolayer can be modified by such doping. The results show that the doping of Cr, Mn, Fe, Co, Ni, and Cu atoms can induce magnetization, while no magnetism is observed when Sc, Ti, and V atoms are doped into the ZnO monolayer. The magnetic moment is mainly due to the strong p–d mixing of O and TM (Cr, Mn, Fe, Co, Ni, and Cu) orbitals. These results are potentially useful for spintronic applications and the development of magnetic nanostructures. © 2013 Wiley Periodicals, Inc.     

The geometric, electronic, and magnetic properties of Ag5X+ (X = Sc, Ti, V, Cr, Mn, Fe, Co, and Ni) clusters

Density functional theory calculations are performed on small cationic transition metal doped silver clusters, Ag5X+ (X = Sc, Ti, V, Cr, Mn, Fe, Co, and Ni) using the B3LYP and BP86 functionals. Several two-dimensional and three-dimensional isomers with the dopant at a high coordinated site are found to be close in energy. The relative energy of the isomers is checked with CCSD(T). The interaction between the dopant 3d electrons and the host is discussed by considering the density of states and the shape of the molecular orbitals. A large local spin magnetic moment on the dopant atom is predicted.     

Structural,electronic, and magnetic properties of 3d transition metal doped GaN nanosheet: A first‐principles study

We have performed the first‐principles calculations on the structural, electronic, and magnetic properties of 3d transition‐metal? (Cr, Mn, Fe, Co, and Ni) atoms doped 2D GaN nanosheet. The results show that 3d TM atom substituting one Ga leads to a structural reconstruction around the 3d TM impurity compared to the pristine GaN nanosheet. The doping of TM atom can induce magnetic moments, which are mainly located on the 3d TM atom and its nearest‐neighbor N atoms. It is found that Mn‐ and Ni‐doped GaN nanosheet with 100% spin polarization characters seem to be good candidates for spintronic applications. When two Ga atoms are substituted by two TM dopants, the ferromagnetic (FM) ordering becomes energetically more favorable for Cr‐, Mn‐, and Ni‐doped GaN nanosheet with different distances of two TM atoms. On the contrary, the antiferromagnetic (AFM) ordering is energetically more favorable for Fe‐doped GaN nanosheet. In addition, our GGA + U calculations show the similar results with GGA calculations. © 2016 Wiley Periodicals, Inc.     

铁磁性过渡离子掺杂对纤锌矿相硫化锌电子结构的影响

通过第一性原理计算,优化了铁磁性过渡离子掺杂的纤锌矿相硫化锌Fm0.125Zn0.875S(Fm=Fe、Co、Ni)的几何结构,计算了其电子结构,分析了其半金属性及其微观机制。结果表明:对不同的铁磁性杂质离子,Fm0.125Zn0.875S在费米面处的自旋极化率均为-100%,具有半金属性,是潜在的优质自旋注入材料。Fm0.125Zn0.875S具有较宽的自旋带隙,从而具有较高的居里温度和广泛的应用前景。Fe0.125Zn0.875S、Co0.125Zn0.875S和Ni0.125Zn0.875S的2×2×1超胞的磁矩分别为3.96μB、2.90μB和2.00μB,主要来自于铁磁性过渡离子Fe、Co和Ni离子。这3种离子的电子结构分别为eg2↑eg1↓t2g3↑,eg2↑eg2↓t2g3↑和eg2↑eg2↓t2g3↑t2g1↓。     

Anomalous magnetic behavior in the transition metal ions doped Cu2O flower-like nanostructures

Cuprous oxide (Cu₂O) flower-like nanostructures doped with various metal ions i.e. Fe, Co, Ni and Mn have been synthesized by an organic phase solution method. The powder X-ray diffraction study clearly reveals them as single phase simple cubic cuprite lattice. Study of their magnetic properties have shown that these doped samples are ferromagnetic in nature; however, no such property was observed for the undoped Cu₂O sample. The magnitude of the ferromagnetic behavior was found to be dependent on the dopant metal ions amount, which increased consistently with its increase. As total magnetic moment contribution of the doped metal ions calculated was insignificant, it is believed to have originated from the induced magnetic moments at cation deficiency sites in the material, created possibly due to the disturbance of the crystal lattice by the dopant ions. The existence of the defects has been supported by photoluminescence spectra of the doped samples.     

Electronic and magnetic properties of manganese and iron-doped Ga(n)As(n) nanocages (n=7-12)

The electronic and magnetic properties of Mn- or Fe-doped Ga(n)As(n) (n=7-12) nanocages were studied using gradient-corrected density-functional theory considering doping at substitutional, endohedral, and exohedral sites. When doped with one atom, the most energetically favorable site gradually moves from surface (n=7-11) to interior (n=12) sites for the Mn atom, while the most preferred doping site of the Fe atom alternates between the surface (n=7,9,11) and interior (n=8,10,12) sites. All of the ground-state structures of Mn@Ga(n)As(n) have the atomlike magnetic moment of 5mu(B), while the total magnetic moments of the most stable Fe@Ga(n)As(n) cages for each size are about 2mu(B) except for the 4mu(B) magnetic moment of Fe@Ga(12)As(12). Charge transfer and hybridization between the 4s and 3d states of Mn or Fe and the 4s and 4p states of As were found. The antiferromagnetic (AFM) state of Mn(2)@Ga(n)As(n) is more energetically favorable than the ferromagnetic (FM) state. However, for Fe(2)@Ga(n)As(n) the FM state is more stable than the AFM state. The local magnetic moments of Mn and Fe atoms in the Ga(n)As(n) cages are about 4mu(B) and 3mu(B) in the FM and AFM states, respectively. For both Mn and Fe bidoping, the most energetically favorable doping sites of the transition metal atoms are located on the surface of the Ga(n)As(n) cages. The computed magnetic moments of the doped Fe and Mn atoms agree excellently with the theoretical and experimental values in the Fe(Mn)GaAs interface as well as (Ga, Mn)As dilute magnetic semiconductors.     

Electronic and magnetic properties of substituted BN sheets: a density functional theory study

Using density functional calculations, we investigate the geometries, electronic structures and magnetic properties of hexagonal BN sheets with 3d transition metal (TM) and nonmetal atoms embedded in three types of vacancies: V(B), V(N), and V(B+N). We show that some embedded configurations, except TM atoms in V(N) vacancy, are stable in BN sheets and yield interesting phenomena. For instance, the band gaps and magnetic moments of BN sheets can be tuned depending on the embedded dopant species and vacancy type. In particular, embedment such as Cr in V(B+N), Co in V(B), and Ni in V(B) leads to half-metallic BN sheets interesting for spin filter applications. From the investigation of Mn-chain (C(Mn)) embedments, a regular 1D structure can be formed in BN sheets as an electron waveguide, a metal nanometre wire with a single atom thickness.     

First Principle Calculation of Electric and Magnetic Properties for New Half-metal Fe2ScO4

The new half-metals Fe2ScO4 and FeSc2O4 were designed and their spinel structures were optimized based on the first-principle pseudo-potential method. Their electric and magnetic properties including molecular magnetic moments and electronic structures were calculated and analyzed, and then were compared with those of Fe3O4. The calculation showed that Fe2ScO4 and FeSc2O4 were both new ferromagnetic II B-type half-metals, but Fe3O4 was ferrimagnetic. The molecular magnetic moment of Fe2ScO4 is about 7.28 1B, which is much larger than the 4.0 1B of Fe3O4 and 3.96 1B of Fe2ScO4. The molecular magnetic moment of Fe2ScO4 mainly came from the spin-polarization of Fe3d electrons. Also, the conductance of Fe2ScO4 was a little larger than that of Fe3O4. For Fe2ScO4, the average electronic structure of Sc on A-sites wasSc+3s23p43d2 and that of Fe on B-sites was Fe2+t2g3↑"tg2↑"t2g↓. It can be predicted that the new half-metal Fe2ScO4 has wider application ground in spin electronic instruments because of its larger magnetoresistance compared to Fe3O4 and FeSc2O4.