过渡金属掺杂SnO_2的电子结构与磁性

采用密度泛函理论及赝势平面波方法,对未掺杂SnO_2以及过渡金属V、Cr、Mn掺杂SnO_2的超原胞体系进行了几何优化,计算了晶格常数、电子结构与磁学性质.结果表明,6.25%与12.5%两种掺杂浓度时,体系的电子自旋和磁学性质没有发生很大的变化;相对于未掺杂SnO_2,过渡金属掺杂后SnO_2中O原子有向过渡金属移动的趋势,并使得O与掺杂金属之间键长变短;在V和Cr掺杂后,SnO_2具有半金属性质,而Mn掺杂SnO_2没有发现上述性质.6.25%与12.5%的杂质浓度对自旋和磁矩影响不大,掺杂产生的磁矩主要来自于过渡金属3d电子态,且磁矩的大小与过渡金属的电子排布有关.V、Cr、Mn掺杂SnO_2后的总磁矩分别为0.94μ_B、2.0μ_B、3.00μ_B.磁矩主要来源于过渡金属3d轨道的自旋极化,当O原子出现负磁矩的时候,还有很小一部分磁矩来源于临近过渡金属的Sn原子.     

过渡元素掺杂Fe_3O_4(001)表面磁电性能的理论研究

采用基于密度泛函理论的第一性原理方法,计算Fe_3O_4,Fe_3O_4(001)表面以及过渡元素掺杂表面的电子结构和磁性。结果表明Fe_3O_4的半金属性主要来源于B位Fe离子,并且Fe的3d轨道发生强烈自旋极化;比较(001)表面不同终端A和B终端的表面能和电子结构,得出两种终端稳定性存在差异且A终端较稳定同时表现半金属性;由过渡元素V、Cr、Mn、Co、Cu和Zn取代Fe_3O_4(001)表面A终端A位Fe进行掺杂,形成的6种新表面结构都保持了半金属性。对比它们的表面能和磁矩,Mn掺杂的表面结构最稳定并且磁矩明显增大。     

过渡金属掺杂SnO2的电子结构与磁性

采用密度泛函理论及赝势平面波方法, 对未掺杂SnO2以及过渡金属V、Cr、Mn掺杂SnO2的超原胞体系进行了几何优化, 计算了晶格常数、电子结构与磁学性质. 结果表明, 6.25%与12.5%两种掺杂浓度时, 体系的电子自旋和磁学性质没有发生很大的变化; 相对于未掺杂SnO2, 过渡金属掺杂后SnO2中O原子有向过渡金属移动的趋势, 并使得O与掺杂金属之间键长变短; 在V和Cr掺杂后, SnO2具有半金属性质, 而Mn掺杂SnO2没有发现上述性质. 6.25%与12.5%的杂质浓度对自旋和磁矩影响不大, 掺杂产生的磁矩主要来自于过渡金属3d电子态, 且磁矩的大小与过渡金属的电子排布有关. V、Cr、Mn掺杂SnO2后的总磁矩分别为0.94μB、2.02μB、3.00μB. 磁矩主要来源于过渡金属3d轨道的自旋极化, 当O原子出现负磁矩的时候, 还有很小一部分磁矩来源于临近过渡金属的Sn原子.     

过渡金属元素Sc、Cr和Mn对Mg2Ge掺杂的第一性原理研究

基于密度泛函理论(DFT)的第一性原理计算,研究了过渡金属元素Sc、Cr和Mn掺杂对Mg₂Ge晶体光、电、磁性质的影响。结果表明,Sc掺杂能使Mg₂Ge的费米能级进入导带,呈n型简并半导体;Cr和Mn掺杂能使Mg₂Ge能带结构和态密度在费米能级附近产生自旋劈裂而形成净磁矩,表现为半金属磁体和稀磁半导体,体系净磁矩均来自杂质原子3d轨道电子及其诱导极化的Ge4p态和Mg2p态自旋电子。与本征Mg₂Ge相比,掺杂体系静态介电常数增大,扩展了吸收光谱,提升了近红外光波段吸收能力。     

电场和应力作用下氮钝化扶手型氧化锌纳米带的电子结构和磁特性

采用密度泛函理论(DFT)方法,在LDA+U水平下详细研究了电场和应力作用下氮钝化扶手型氧化锌纳米带(NA8-ZnONRs)的电子结构和磁特性。对体系的电子结构和磁性进行详细的计算,结果表明：本征扶手型氧化锌纳米带(A8-ZnONRs)是无磁性P型半导体。氮钝化后NA8-ZnONRs具有铁磁金属性,其磁性主要来源于N2p轨道(2.56μ_B)和O2p轨道(0.69μ_B)电子的自旋极化,总磁矩为3.21μ_B。NA8-ZnONRs体系对X方向电场有较强的响应,通过调节X方向电场的幅度,可以有效调节体系的磁矩。在X方向电场作用下体系仍具有铁磁金属性,磁性也主要来源于N2p和O2p轨道电子的自旋极化。施加X方向应力作用后,体系仍表现为铁磁金属性。与NA8-ZnONRs纳米带磁矩相比,体系的总磁矩均发生了较大幅度的增长,表明体系对应力作用具有较明显的相应。但随着应力幅度的调节,总磁矩的变化较平坦。表明施加应力可以有效调节体系的磁矩,但在较小应力范围内,体系对应力变化的相应不明显。     

过渡元素掺杂Fe3O4（001）表面磁电性能的理论研究

采用基于密度泛函理论的第一性原理方法,计算Fe₃O₄,Fe₃O₄（001）表面以及过渡元素掺杂表面的电子结构和磁性。结果表明Fe₃O₄的半金属性主要来源于B位Fe离子,并且Fe的3d轨道发生强烈自旋极化;比较（001）表面不同终端A和B终端的表面能和电子结构,得出两种终端稳定性存在差异且A终端较稳定同时表现半金属性;由过渡元素V、Cr、Mn、Co、Cu和Zn取代Fe₃O₄（001）表面A终端A位Fe进行掺杂,形成的6种新表面结构都保持了半金属性。对比它们的表面能和磁矩,Mn掺杂的表面结构最稳定并且磁矩明显增大。     

FMBen（FM=Fe,Co,Ni;n=1-12）团簇结构和电子性质

采用密度泛函理论中的广义梯度近似对FMBen(FM=Fe,Co,Ni;n=1-12)团簇的几何构型进行优化,并对能量、频率和磁性进行了计算,同时考虑了电子的自旋多重度.结果表明,纯铍团簇的幻数是由电子的壳层模型确定,而FMBen团簇的幻数主要由几何效应来解释;掺杂铁磁性的过渡金属(Fe,Co,Ni)提高了纯团簇的稳定性.二阶能量差分表明FMBen(FM=Fe,Co,Ni)的幻数分别为5,10;5,10;4,10.通过对磁性质的研究发现掺杂不同的过渡金属时,磁矩出现了不同的变化规律.     

LSDA+U方法研究Ni掺杂CuO和Cu掺杂NiO的电子结构和反铁磁学性质

光催化分解水制H2和光催化还原CO2是解决能源危机和全球变暖的有效途径.但是,由于粉末光催化剂存在回收效率低的问题,因而光催化成本很高.而磁性光催化剂便于回收和重复利用,因此人们把目光转向具有磁性的非光催化剂材料,试图通过改性使得磁性材料具有合适的水分解或者还原CO2的氧化还原电位.同时,对具有光催化活性但是没有磁性的材料进行磁化改性可以得到新型的磁性光催化剂.本文通过对本身具有磁性的NiO材料进行Cu掺杂能带调整,使调整后的NiO具有合适的氧化还原电位;对本身具有良好光催化氧化还原电位的CuO材料进行Ni掺杂磁化调整,使磁化后的CuO既有良好的氧化还原电位又有磁性.最终两种材料经过掺杂变成磁性光催化材料,既有较好的光催化性能,又可高效回收,因此有望在光催化领域具有潜在的应用前景.LSDA(局域自旋密度近似)+U(有效库仑相关能)计算方法能够很好地给出磁矩和禁带宽度等电子结构性质.本文通过LSDA+U计算方法对具有磁性的宽禁带半导体材料NiO进行电子结构改性研究,希望通过降低其禁带宽度、调整其氧化还原电位使之对太阳光有响应.因其同时具有磁性便于回收,使得光催化分解水制H2和光催化还原CO2成本高的问题得到解决.对NiO的磁胞进行了Cu掺杂计算,结果发现Cu的掺杂几乎没有引起NiO空间结构的变化,这是因为Cu和Ni的离子半径相近.通过对电子结构的计算发现掺杂体系的禁带变窄,并且在禁带中间出现了两条杂质能级,该杂质能级是由掺杂原子Cu 3d态组成.杂质能级的出现能够降低光生载流子在带隙中的复合,从而提高光催化效率.计算结果同时表明,Cu掺杂的NiO系统具有一个1μB的净磁矩,即Cu的掺杂使得NiO显示出磁性,而Ni的磁矩在掺杂前后几乎保持不变,由纯相的1.67μB增加到掺杂体系中的1.70μB.由于CuO本身低指数(111)面和(011)面具有合适的分解水制H2和还原CO2的氧化还原电位,如果对CuO进行磁化改性,可以使光催化剂CuO同时带有磁性,便于回收再利用.本文对CuO磁胞进行了Ni的掺杂计算.结果表明,由于离子半径相近,Ni掺杂几乎没有引起CuO空间结构的变化.掺杂后的体系具有一个1.66μB的净磁矩,同时Ni的掺杂引起多个杂质能级出现,靠近价带的杂质能级由Cu 3d态组成,而在导带底位置出现的杂质能级主要由Ni 3d态组成.整个能带向高能级方向平移.     

LSDA+U方法研究Ni掺杂CuO和Cu掺杂NiO的电子结构和反铁磁学性质（英文）

光催化分解水制H_2和光催化还原CO_2是解决能源危机和全球变暖的有效途径.但是,由于粉末光催化剂存在回收效率低的问题,因而光催化成本很高.而磁性光催化剂便于回收和重复利用,因此人们把目光转向具有磁性的非光催化剂材料,试图通过改性使得磁性材料具有合适的水分解或者还原CO_2的氧化还原电位.同时,对具有光催化活性但是没有磁性的材料进行磁化改性可以得到新型的磁性光催化剂.本文通过对本身具有磁性的NiO材料进行Cu掺杂能带调整,使调整后的NiO具有合适的氧化还原电位;对本身具有良好光催化氧化还原电位的CuO材料进行Ni掺杂磁化调整,使磁化后的CuO既有良好的氧化还原电位又有磁性.最终两种材料经过掺杂变成磁性光催化材料,既有较好的光催化性能,又可高效回收,因此有望在光催化领域具有潜在的应用前景.LSDA(局域自旋密度近似)+U(有效库仑相关能)计算方法能够很好地给出磁矩和禁带宽度等电子结构性质.本文通过LSDA+U计算方法对具有磁性的宽禁带半导体材料NiO进行电子结构改性研究,希望通过降低其禁带宽度、调整其氧化还原电位使之对太阳光有响应.因其同时具有磁性便于回收,使得光催化分解水制H_2和光催化还原CO_2成本高的问题得到解决.对NiO的磁胞进行了Cu掺杂计算,结果发现Cu的掺杂几乎没有引起NiO空间结构的变化,这是因为Cu和Ni的离子半径相近.通过对电子结构的计算发现掺杂体系的禁带变窄,并且在禁带中间出现了两条杂质能级,该杂质能级是由掺杂原子Cu 3d态组成.杂质能级的出现能够降低光生载流子在带隙中的复合,从而提高光催化效率.计算结果同时表明,Cu掺杂的NiO系统具有一个1μB的净磁矩,即Cu的掺杂使得NiO显示出磁性,而Ni的磁矩在掺杂前后几乎保持不变,由纯相的1.67μB增加到掺杂体系中的1.70μB.由于CuO本身低指数(111)面和(011)面具有合适的分解水制H_2和还原CO_2的氧化还原电位,如果对CuO进行磁化改性,可以使光催化剂CuO同时带有磁性,便于回收再利用.本文对CuO磁胞进行了Ni的掺杂计算.结果表明,由于离子半径相近,Ni掺杂几乎没有引起CuO空间结构的变化.掺杂后的体系具有一个1.66μB的净磁矩,同时Ni的掺杂引起多个杂质能级出现,靠近价带的杂质能级由Cu 3d态组成,而在导带底位置出现的杂质能级主要由Ni 3d态组成.整个能带向高能级方向平移.     

FMBen(FM=Fe,Co, Ni; n=1-12)团簇结构和电子性质

采用密度泛函理论中的广义梯度近似对FMBen(FM=Fe, Co, Ni; n=1-12)团簇的几何构型进行优化, 并对能量、频率和磁性进行了计算, 同时考虑了电子的自旋多重度. 结果表明, 纯铍团簇的幻数是由电子的壳层模型确定, 而FMBen团簇的幻数主要由几何效应来解释; 掺杂铁磁性的过渡金属(Fe, Co, Ni)提高了纯团簇的稳定性. 二阶能量差分表明FMBen(FM=Fe, Co, Ni)的幻数分别为5, 10; 5, 10; 4, 10. 通过对磁性质的研究发现掺杂不同的过渡金属时, 磁矩出现了不同的变化规律.     

ChemInform Abstract: Magnetooptical Properties of Transition Metal Compounds XPt3 (X: V,Cr, Mn,Fe, Co) and X3Pt (X: Fe,Co)

ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.     

Adjusting magnetic moments of Sc13 and Y13 clusters by doping different X atom (X = Na,Mg, Al,Si, P)

We have investigated the structural and magnetic properties of the doped XM₁₂ and charged M₁₃ (X = Na, Mg, Al, Si, P; M = Sc, Y) clusters using the density‐functional theory with spin‐polarized generalized gradient approximation. It was found that doped atoms can induce significant change of the magnetic moments of Sc₁₃ and Y₁₃ clusters. The total magnetic moments of the NaM₁₂, MgM₁₂, AlM₁₂, SiM₁₂, and PM₁₂ clusters are regular 5, 6 (12), 7, 8, and 9 μ_b, respectively (but 19 μ_b for Sc₁₃ and Y₁₃, 12 μ_b for Y, 18 μ_b for Sc, Sc, and Y). The doped atom substituting the surface atom of the plausible icosahedral configuration is viewed as the ground‐state structure of the XM₁₂ (X = Na, P; M = Sc, Y) and MgSc₁₂ clusters. While for XM₁₂ (X = Al, Si; M = Sc, Y) and MgY₁₂ clusters, the doped atom occupying the central position of the icosahedral configuration is viewed as the ground‐state structure. The doping and the charging both enhance the stability of the Sc₁₃ and Y₁₃ clusters. These findings should have an important impact on the design of the adjustable magnetic moments systems. © 2009 Wiley Periodicals, Inc. Int J Quantum Chem, 2010     

ChemInform Abstract: Electronic Structure,Elastic Anisotropy,Thermal Conductivity and Optical Properties of Calcium Apatite Ca5(PO4)3X (X: F,Cl or Br).

The structural properties, phase stability, electronic structure, elastic properties, and optical properties of Ca₅(PO₃)₄F (FA), Ca₅(PO₃)₄Cl (ClA) and Ca₅(PO₃)₄Br (BrA) are studied by DFT calculations with the generalized gradient approximation.     

ChemInform Abstract: Magnetic and X‐Ray Absorption Studies on the RE5X2Sb6 (RE: Eu,Yb; X: Al,Ga, In) Compounds.

The title compounds (obtained by a high frequency induction heating method) are characterized by magnetic measurements, XANES, and XRD.     

First-principle investigation of XSrH3 (X = K and Rb) perovskite-type hydrides for hydrogen storage

Hydrogen can be utilized as an energy source; therefore, hydrogen storage has received the most appealing examination interest in recent years. The investigations of hydrogen storage applications center fundamentally around the examination of hydrogen capacity abilities of recently presented compounds. XSrH₃ (X = K and Rb) compounds have been examined by density functional theory (DFT) calculations to uncover their different characteristics, as well as hydrogen capacity properties, for the first time. Studied compounds are optimized in the cubic phase, and optimized lattice constants are obtained as 4.77 and 4.99 Å for KSrH₃ and RbSrH₃, respectively. These hydrides have shown negative values of formation enthalpies as they are stable thermodynamically. XSrH₃ might be used in hydrogen storage applications because of high gravimetric hydrogen storage densities, which are 2.33 and 1.71 wt% for KSrH₃ and RbSrH₃, respectively. Moreover, electronic properties confirm the semiconductor nature of these compounds having indirect band gaps of values 1.41 and 1.23 eV for KSrH₃ and RbSrH₃, respectively. In addition, mechanical properties from elastic constants such as Young modulus and Pugh's ratio, also have been investigated, and these compounds were found to satisfy born stability conditions. Furthermore, Pugh's ratio and Cauchy pressure show that these hydrides have a brittle nature. Furthermore, thermodynamic properties such as entropy and Debye temperature have been examined using the quasiharmonic Debye model for different temperatures and pressures.     

Electronic structures and optical properties of BiOX (X = F,Cl, Br,I) via DFT calculations

Based on the density functional theory (DFT), the lattice constants and atomic positions of BiOX (X = F, Cl, Br, I) species have been optimized, and the electronic and optical properties of the relaxed species have been calculated, with Bi 5d states considered or not. Relaxation generally results in the shrinkage in a and the expansion of c. Relaxed BiOCl, BiOBr, and BiOI present indirect band gaps, whereas BiOF exhibits a direct or somewhat indirect band‐gap feature corresponding to the relaxation and calculation with the Bi 5d states or not. The bottom of the conduction band is quite flat for relaxed BiOI, and apparently flat in BiOBr, and shows observable flatness in BiOCl as well when considering the Bi 5d states. The top of the valence band is rather even as well for some species. The obtained maximum gaps for relaxed BiOF, BiOCl, BiOBr, and BiOI are 3.34, 2.92, 2.65, and 1.75 eV, respectively. The density peak of X np states in the valence band shifts toward the valence band maximum with the increasing X atomic number. The bandwidths, atomic charges, bond orders, and orbital density have also been investigated along with some optical properties. © 2008 Wiley Periodicals, Inc. J Comput Chem, 2009     

Electronic properties of Strandberg anions: A DFT study of [X2Mo5O23]n−, (X = PV,SVI, AsV,SeVI), and [(RP)2Mo5O21]4− (R = H,CH3, C2H5)

The electronic properties of the anions mentioned in the title polyanions were calculated by means of Density Functional Theory (DFT). The redox properties and the basicity of the external oxygen sites of those polyanions were analyzed. The results show that the redox properties of Strandberg anions depend on the nature of heteroatom X. The organic group bonded to the heteroatom modifies the redox property of the cluster. The oxygen basicities of the polyanions were analyzed by virtue of molecular electrostatic potential (MEP). The MEP distribution suggests that the most basic centers are triple‐bridging oxygen atoms, one of which is shared with two metal atoms and one heteroatom X in [P₂Mo₅O₂₃]^6? and [As₂Mo₅O₂₃]^6?. In [(RP)₂Mo₅O₂₁]^4?, the triple‐bridging oxygen atoms and the double‐bridging oxygen atoms bonded to two Mo atoms identified as the most basic centers. © 2005 Wiley Periodicals, Inc. Int J Quantum Chem, 2005     

Spectroscopic properties and bond dissociation energies of PbX,PbX±, PbX2 and PbX2± (X ​= ​F,Cl, Br,I)

Ab initio calculations have been performed to investigate some of the spectroscopic properties, like geometry, frequency, electron affinity, ionization potential and finally adiabatic bond dissociation energies (BDEs) of lead monohalides, lead dihalides and their ions viz. PbX, PbX^±, PbX₂, $\mathrm{P}\mathrm{b}{\mathrm{X}}_{\mathrm{2}}^{\pm }$ (X ?= ?F, Cl, Br, I) in their ground state at the QCISD(T)//MP2 level of theory using correlation consistent basis sets. For the validation of MP2 optimized geometry and frequency, we further obtained geometry and frequency of all the neutral and ionic systems using QCISD(T) method with the same basis sets. The BDEs of PbX₂ molecules are calculated using the BDEs of $\mathrm{P}\mathrm{b}{\mathrm{X}}_{\mathrm{2}}^{\pm }$ ions and taking ionization potential and electron affinity of various systems. The calculated values are found in good agreement with the available data. Most of the data for ionic systems are reported first time in literature.