Substrate temperature effects on the structural,compositional, and electrical properties of VO2 thin films deposited by pulsed laser deposition

The vanadium dioxide (VO₂) thin films were deposited on silicon (100) substrate using the pulsed laser deposition technique. The thin films were deposited at different substrate temperatures (500°C, 600°C, 700°C, and 800°C) while keeping all the other parameters constant. X‐ray diffraction confirmed the crystalline VO₂ (B) and VO₂ (M) phase formation at different substrate temperatures. X‐ray photoelectron spectroscopy analysis showed the presence of V⁴⁺ and V⁵⁺ charge states in all the deposited thin films which confirms that the deposited films mainly consist of VO₂ and V₂O₅. An increase in the VO₂/V₂O₅ ratio has been observed in the films deposited at higher substrate temperatures (700°C and 800°C). Scanning electron microscope micrographs revealed different surface morphologies of the thin films deposited at different substrate temperatures. The electrical properties showed the sharp semiconductor to metal transition behavior with approximately 2 orders of magnitude for the VO₂ thin film deposited at 800°C. The transition temperature for heating and cooling cycles as low as 46.2°C and 42°C, respectively, has been observed which is related to the smaller difference in the interplanar spacing between the as‐deposited thin film and the standard rutile VO₂ as well as to the lattice strain of approximately −1.2%.     

Effects of lithium insertion and deinsertion into V2O5 thin films: Optical,structural, and absorption properties

The lithiated/delithiated vanadium pentoxide films deposited by sol‐gel spin coating on indium tin oxide–coated glass substrates were analyzed by sputter‐induced photon spectroscopy, X‐ray diffraction, and optical absorption techniques. First, it is shown that the crystalline structure of V₂O₅ after intercalation remains practically unchanged. Particularly, in the optical spectra during 5 keV Kr⁺ ion bombardment of clean, intercalated, and deintercalated V₂O₅ films, a series of sharp lines and unexpected continuum radiation were observed and well explained. It is also demonstrated that the intercalation and deintercalation of lithium have strong influences on various characteristics of pentoxide vanadium. The interpretations of the obtained results in the 3 experiments—X‐ray diffraction, sputter‐induced photon spectroscopy, and optical absorption techniques—are coherent and complement each other.     

X-ray and Raman study of spray pyrolysed vanadium oxide thin films

Vanadium oxide thin films were prepared by spray pyrolysis using solutions of vanadium chloride (VCl₃) with different concentrations on glass substrates heated at 200 and 250 °C. The influence of substrate temperature (T_s) and solution concentration (molarity) on structural and vibrational properties is discussed by using X-ray diffraction and Raman spectroscopy. The results revealed that at 0.05 M and T_s = 200 °C, V₄O₉ thin films are obtained. At 250 °C, V₂O₅ phases with preferential orientation are observed and the films become polycrystalline when the molarity increases.     

Synthesis of self-assembled nanorod vanadium oxide bundles by sonochemical treatment

Self-assembled nanorod of vanadium oxide bundles were synthesized by treating bulk V₂O₅ with high intensity sonochemical technique. The synthesized materials were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM) and temperature-programmed reduction (TPR) in H₂. Catalytic behaviour of the materials over anaerobic n-butane oxidation was studied through temperature-programmed reaction (TPRn). Catalytic evaluation of the sonochemical treated V₂O₅ products was also studied on microreactor. XRD patterns of all the vanadium samples were perfectly indexed to V₂O₅. The morphologies of the nanorod vanadium oxides as shown in SEM and TEM depended on the duration of the ultrasound irradiation. Prolonging the ultrasound irradiation duration resulted in materials with uniform, well defined shapes and surface structures and smaller size of nanorod vanadium oxide bundles. H₂-TPR profiles showed that larger amount of oxygen species were removed from the nanorod V₂O₅ compared to the bulk. Furthermore, the nanorod vanadium oxide bundles, which were produced after 90, 120 and 180 min of sonochemical treatment, showed an additional reduction peak at lower temperature (850 K), suggesting the presence of some highly active oxygen species. TPRn in n-butane/He over these materials showed that the nanorod V₂O₅ with highly active oxygen species showed markedly higher activity than the bulk material, which was further proven by catalytic oxidation of n-butane.     

Raman spectroscopic characterization of the microstructure of V2O5 films

The vanadium pentoxide (V₂O₅) films were deposited on silicon wafer by DC magnetron sputtering. By Raman scattering measurements, the microstructure properties of the V₂O₅ films prepared with different O₂–Ar gas flow ratios and annealed at different temperatures were studied, respectively. The results revealed that the increase of O₂–Ar gas flow ratio during sputtering was of advantage to prepare the V₂O₅ film with desired layer structure. A high post-annealing temperature (below 500 °C) induced the crystallization and the formation of the integrated structure of V₂O₅ film. However, it was found that both intensities of Raman scattering peaks at 146 cm^?1 and 994 cm^?1, respectively, decreased for samples annealed at a temperature of 550 °C. The peak at 146 cm^?1 was attributed to skeleton bent vibration and that at 994 cm^?1 was due to the stretching vibration of vanadyl V=O_A bond. It showed that the high-temperature annealing was believed to have distorted the microstructure of V₂O₅ films. The oxygen vacancies were, therefore, induced, which benefited the formation of V-O_A-V bonds between layers. The result of X-ray diffraction measurements was in good agreement with that of Raman scattering spectra.     

Electrical conductivity of g-Bi2O3-V2O5 solid solution

The total conductivity (σ_T) in bcc γ-Bi₂O₃ doped with V₂O₅ system has been measured in the composition range between 1 and 7 mol% V₂O₅ at different temperatures. Phase transitions for different addition amounts depending on the temperature were investigated by quenching the samples. According to the XRD and DTA/TG results, this bcc type solid solution was stable up to about 720°C and the solubility limit was found at ˜7 mol% V₂O₅ in γ-phase. This system showed predominantly an oxide ionic conduction. As the V₂O₅ addition increased, the ionic conduction increased up to 5 mol% V₂O₅ at which the highest conductivity was found to be 8.318·10^-2 Ω^-1 cm^-1 at 700°C and then decreased. It has been proposed that γ-Bi₂O₃ phase contains a large number of oxide anion vacancies and incorporated vanadium cations at tetrahedral sites which affect the oxygen sublattice of the crystal structure. This revised version was published online in August 2006 with corrections to the Cover Date.     

XPS study of the oxidation of nanosize Ni/Si(100) films

The XPS (X-ray photoelectron spectroscopy) study of nickel oxide nanolayers obtained by magnetron sputtering of the metal and its subsequent oxidation in air at different temperatures (400°C and 1000°C) was performed. Silicon(100) was used as a substrate. Surface of the initial Ni/Si structure was shown to contain not only Ni metal, but also the NiO oxide. Annealing at 400°C results in a complete oxidation of the metal film. At a high-temperature annealing (1000°C), nickel interacts both with oxygen and silicon substrate to form NiSi silicide and a composite Ni-Si-O phase in transition layer. Electronconductivity of NiO films is determined by intercrystallite barriers. Activation energies of film electroconductivity in model gases (O₂, Ar, H₂) were found.     

Uniform Decoration of Vanadium Oxide Nanocrystals on Reduced Graphene‐Oxide Balls by an Aerosol Process for Lithium‐Ion Battery Cathode Material

VO₂‐decorated reduced graphene balls were prepared by a one‐pot spray‐pyrolysis process from a colloidal spray solution of well‐dispersed graphene oxide and ammonium vanadate. The graphene–VO₂ composite powders prepared directly by spray pyrolysis had poor electrochemical properties. Therefore, the graphene–VO₂ composite powders were transformed into a reduced graphene ball (RGB)–V₂O₅ (RGB) composite by post‐treatment at 300 °C in an air atmosphere. The TEM and dot‐mapping images showed a uniform distribution of V and C components, originating from V₂O₅ and graphene, consisting the composite. The graphene content of the RGB–V₂O₅ composite, measured by thermogravimetric analysis, was approximately 5 wt %. The initial discharge and charge capacities of RGB–V₂O₅ composite were 282 and 280 mA h g^?1, respectively, and the corresponding Coulombic efficiency was approximately 100 %. On the other hand, the initial discharge and charge capacities of macroporous V₂O₅ powders were 205 and 221 mA h g^?1, respectively, and the corresponding Coulombic efficiency was approximately 93 %. The RGB–V₂O₅ composite showed a better rate performance than the macroporous V₂O₅ powders.     

New defect vanadium dioxide phases

Two new monoclinic V₂O₄ phases were prepared at high pressure from the regular monoclinic (M₁) form of V₂O₄. The unit cell dimensions for the unmodified monoclinic (M₂) phase are: a = 9.083, b = 5.763, c = 4.532 Å, and β = 91.30°. The space group $\text{C 2}\text{m}$ is consistent with the crystallographic data. The new vanadium dioxide exhibited a structural transition and an abrupt, reversible change in resistivity (approx. 4 orders of magnitude) at 66°C similar to that observed in M₁-type V₂O₄. This new form of V₂O₄ is believed to be stabilized by chemical and structural defects. Controlled substitution of V⁵⁺ for V⁴⁺ in the structure led to yet another monoclinic (M₃) phase. This phase is closely related to the M₂ phase. The M₃ unit cell dimensions are: a = 4.506, b = 2.899, c = 4.617 Å, and β = 91.79°, having the space group $\text{P 2}\text{m}$. The substitution of V³⁺ yielded only monoclinic (M₁) derivatives. The modified products have varied semiconductor to metal transition temperatures which depend on the type and amount of substitution and defect structure.     

Reactivity of some vanadium oxides: An EPR and XRD study

V₂O₅, VO₂ and V₂O₃ fresh samples and at different times after purchase or preparation (aged samples) were investigated by chemical analysis, redox treatments, XRD and EPR. The ageing process through a reaction with water and oxygen slowly oxidize crystalline VO₂ and V₂O₃, leading to a quasi-amorphous phase with bariandite structure (V₁₀O₂₄·12H₂O). The role of water is the progressive demolition of the compact structures and formation of hydrated phase. Kinetic study of VO₂ oxidation by O₂ and O₂+H₂O mixture indicates that increasing the temperature up to 723 K the effect of water becomes less important. The reaction leads to partially oxidized products with decreasing water content: bariandite at room temperature, V₃O₇·H₂O at 383 K and V₃O₇ at 723 K. Kinetic investigation of V₂O₅ reduction by CO at 633-723 K showed that the reduction process proceeds trough the formation of V⁴⁺ and of electrons delocalized in the conduction band.     

Electrical,optical, and structural characterization of p‐type N‐doped SnO thin films prepared by thermal oxidation of sputtered SnNx thin films

We present a study of electrical and optical properties of nitrogen‐doped tin oxide thin films deposited on glass by the DC Magnetron Sputtering method. The deposition conditions to obtain p‐type thin films were a relative partial pressure between 7% and 11% (N₂ and/or O₂), a total working pressure of 1.8 mTorr and a plasma power of 30 W. The deposited thin films were oxidized after annealing at 250°C for 30 minutes. X‐ray diffraction results showed that the as‐deposited thin films exhibit a Sn tetragonal structure, and after annealing, they showed SnO tetragonal structure. X‐ray photoelectron spectroscopy results showed the presence of nitrogen in the samples before and after annealing. The measured physical parameters of the thin films were optical band gap between 1.92 and 2.68 eV, resistivity between 0.52 and 5.46 Ωcm, a concentration of p‐type carriers between 10¹⁸ and 10¹⁹ cm^?3, and a Hall mobility between 0.1 and 1.94 cm²V^?1s^?1. These thin films were used to fabricate p‐type thin film transistors.     

Zinc Oxide Defect Microstructure and Surface Chemistry Derived from Oxidation of Metallic Zinc: Thin-Film Transistor and Sensor Behavior of ZnO Films and Rods

Zinc oxide thin films are fabricated by controlled oxidation of sputtered zinc metal films on a hotplate in air at temperatures between 250 and 450 °C. The nanocrystalline films possess high relative densities and show preferential growth in (100) orientation. Integration in thin-film transistors reveals moderate charge carrier mobilities as high as 0.2 cm² V⁻¹s⁻¹. The semiconducting properties depend on the calcination temperature, whereby the best performance is achieved at 450 °C. The defect structure of the thin ZnO film can be tracked by Doppler-broadening positron annihilation spectroscopy as well as positron lifetime studies. Comparably long positron lifetimes suggest interaction of zinc vacancies (V_Zn) with one or more oxygen vacancies (V_O) in larger structural entities. Such V_O-V_Zn defect clusters act as shallow acceptors, and thus, reduce the overall electron conductivity of the film. The concentration of these defect clusters decreases at higher calcination temperatures as indicated by changes in the S and W parameters. Such zinc oxide films obtained by conversion of metallic zinc can also be used as seed layers for solution deposition of zinc oxide nanowires employing a mild microwave-assisted process. The functionality of the obtained nanowire arrays is tested in a UV sensor device. The best results with respect to sensor sensitivity are achieved with thinner seed layers for device construction.     

New-phased metastable V(2) O(3) porous urchinlike micronanostructures: facile synthesis and application in aqueous lithium ion batteries

New‐phased metastable V₂O₃ porous urchinlike micronanostructures were first fabricated on a large scale by a simple top‐down strategy of pyrolyzing a vanadyl ethylene glycolated precursor in the absence of any templates or matrices. The pyrolysis mechanism was clearly revealed by synchrotron vacuum ultraviolet (VUV) photoionization mass spectra for the first time. The new‐phased metastable V₂O₃ exhibits a body‐centered cubic bixbyite structure and shows structural evolution from metastable cubic symmetry to thermodynamically stable rhombohedral symmetry V₂O₃ (R) above 510 °C. Furthermore, the prepared V₂O₃ porous urchinlike micronanostructures, as anode materials in aqueous lithium ion batteries, exhibit improved electrochemical properties with relatively high first discharge capacity and better cycle retention relative to thermodynamically stable V₂O₃ (R), which is derived from its unique microscopic crystal structure and macroscopic 3D framework with rigid morphology, porous structure, and high specific surface area.     

Characterization of thin metastable vanadium oxide films by Raman spectroscopy

Thin films are potentiodynamically generated on vanadium in Ba²⁺/acetate electrolyte systems at high voltages. The influence of the anodic potential up to 400 V on the composition and structure of the about 500 nm thin anodic conversion films are investigated. Raman spectroscopy indicates that different film types depend on the electrochemical process parameters. The relationship between the Raman laser excitation power and the amorphous or microcrystalline film structure is also discussed. Beside metastable disordered structures the films contain crystalline phases of V₂O₅, V₄O₉ and barium vanadate, respectively.     

Oxygen equilibrium pressure above V2O5−x and thermodynamic properties of this oxide system

Measurements of oxygen equilibrium pressure above the V₂O_5?x oxide system have been performed within the temperature range 575 to 615°C. The results have been used to determine the standard enthalpy and entropy in the reaction V₆O₁₃ + O₂ = 3 V₂O₅. The thermodynamic properties of the V₂O_5?x system (at x < 1) cited in the literature have been discussed for all the equilibria postulated.     

Thermal decomposition of ammonium metavanadate supported on Al2O3

The thermal decomposition of ammonium metavanadate supported on aluminium oxide was investigated using DTA, TG and X-ray diffraction techniques.The results obtained revealed that ammonium vanadate decomposed at 225–250°C giving an intermediate compound ((NH₄)₂V₆O₁₆) which decomposed readily at 335–360°C producing V₂O₅. Alumina was found to chance the formation of the intermediate compound and retard its decomposition. Some of the V⁵⁺ ions of V₂O₅ lattice seemed to be reduced into V⁴⁺ and V³⁺ ions by heating in air at 450°C in the presence of Al₂O₃. Such a reaction was attributed to dissolution of some Al³⁺ ions in the V₂O₅ lattice via location in interstitial positions and/or in cationic vacancies. Al₂O₃ was found to interact with V₂O₅ at 650° C giving well-crystalline A1VO₄ which decomposed at about 750°C forming well-crystalline δ-Al₂O₃ and V₂O₅,. Pure Al₂O₃, heated in air at 1000°C, existed in the form of the κ-phase which, on mixing with V₂O₅ (0.5 V₂O₅:1 Al₂O₃) and heating in air at 1000°C, was converted entirely to the well-crystalline α-Al₂O₃ phase.     

Phase Equilibria in the V2O5-Sb2O4 System

Differential thermal analysis (DTA) and X-ray powder diffraction (XRD) were used to study phase equilibria, established in air in the V₂O₅-Sb₂O₄ system up to 1000°C. It has been found that there is a new phase =SbVO₅. The =SbVO₅ has been prepared by two methods: by heating equimolar mixtures of V₂O₅ and α-Sb₂O₄ in air and by oxidation of the known phase of rutile type obtained in pure argon at temperatures between 550 and 650°C. Thermal decomposition of =SbVO₅ in the solid state starts at 710°C giving off oxygen. The results provide a basis for constructing only a part of the phase diagram of the investigated system (up to 50.00 mol% Sb₂O₄). This revised version was published online in July 2006 with corrections to the Cover Date.     

Paramagnetic resonance absorption in reduced tellurium?vanadium oxides

Hydrogen reduction of Te₂V₂O₉ at temperatures ranging from 300 to 450°C was studied by means of x-ray diffraction as well as ESR and IR spectroscopies. The reduction sets in through the formation of oxygen vacancies in Te₂V₂O₉ giving several types of transient VO²⁺ species. Subsequently, TeVO_4·17 and β-TeVO₄ (the latter only in minor amounts) are detected, in accordance with the phase diagram of the V₂O₅? TeO₂? VO₂ ternary system. The reduction stages leading to TeVO_4·17 and β-TeVO₄ are slow until 350°C, whereas rapid decomposition of the binary oxides (to give V₂O₃) is observed at higher temperatures. The magnetic interactions between paramagnetic V⁴⁺ ions in the reaction products are related to the structure of the reduced oxides.     

Single‐phase TiO2 formation by plasma oxidation of titanium thin films

Synthesis of titanium oxide film by plasma oxidization of the metallic films is investigated. Argon/oxygen gas mixture in the pressure range 30 × 10^?2 mbar is used for plasma processing at a frequency of 250 kHz. The plasma‐oxidized films are annealed in a tube furnace in argon atmosphere to establish crystalline‐phase formation. X‐ray diffraction and Raman spectroscopic results manifest peaks corresponding to rutile TiO₂. Ultraviolet‐Visible (UV‐Vis) spectroscopic analysis confirms the bandgap of rutile TiO₂, and photoluminescence spectra exhibit peaks due to oxygen defects. Homogeneity across the film's thickness and the nature of the film substrate interface is studied by depth profiling acquired using secondary ion mass spectrometry. Copyright © 2015 John Wiley & Sons, Ltd.     

Synthesis of vanadium oxides nanosheets as anode material for asymmetric supercapacitor

Vanadium oxides (V₂O₅) have been intensely investigated for advanced supercapacitors due to its extensive multifunctional properties of typical layered structure and multiple stable oxide states of vanadium in its oxides. In this study, V₂O₅ nanosheets are synthesized via V₂O₅ xerogel solvothermal reaction in ethanol solvent at 200 °C for 12 h. The V₂O₅ nanosheets facilitate the easy accessibility of ions and can provide more area available for electrochemical reactions. We have achieved the highest specific capacitance of 298 F/g and good rate discharge for V₂O₅ electrodes. Notably, the capacitance still retains a high retention rate of 85% after 10,000 cycles at 200 mV/s. Furthermore, asymmetric supercapacitors is assembled based on V₂O₅ nanosheets and active carbon electrode, and a specific capacitance of 13.2 F/g is obtained at 1 A/g, with a energy density of 4.7 Wh/kg at a power density of 0.798 kW/kg and remains 2.28 Wh/kg at 7.992 kW/kg. Based on these results, the asymmetric supercapacitor exhibits a good cycle life with 77.3% capacitance retention after 3000 cycles. It suggests that the V₂O₅ nanosheets are promising electrode material for electrochemical supercapacitors.