低聚噻吩衍生物单体的合成及其聚合物薄膜的电致变色性能

合成了两种低聚噻吩衍生物单体:2,3':4',2'-三噻吩(I3T)和5,5'-二醛基-2,3':4',2'-三噻吩(OHC-I3T-CHO).通过电化学方法对单体I3T和OHC-I3T-CHO进行了聚合,制备了相应的聚噻吩衍生物.研究了聚噻吩衍生物薄膜的电致变色性能.当外加一定电压时,基于单体I3T的聚噻吩衍生物薄膜可以在淡黄色和淡蓝色之间发生可逆的颜色变化,基于单体OHC-I3T-CHO的聚噻吩衍生物薄膜能在红色和墨绿色间发生可逆的颜色变化.     

齐聚噻吩衍生物电致变色性质

合成了四种齐聚噻吩衍生物：5,5"-二氰基-2,2’:5’,2"-三噻吩 (DCN3T), 5,5"’-二氰基-2,2’:5’,2":5",2"’-四噻吩 (DCN4T), 5,5"’-甲氧基-2,2’:5’,2":5",2"’-四噻吩(DMO4T) 和 4,4"-二羧基-5,5"-二丙基-2,2’:5’,2"-三噻吩 (BP3T-DCOOH),研究了它们的电致变色性质,研究结果发现,这四种齐聚噻吩衍生物膜在电场作用下,可以发生可逆的颜色变化。     

新型低聚噻吩衍生物的合成及其凝胶化性能研究

设计合成了一系列新型低聚噻吩衍生物N,N'-双十八烷基-5,5"-(2,2:5,2"-三噻吩)二酰胺[N,N'-distearyl-5,5"-(2,2:5,2"-terthiophene) dicarboxamide (DNC₁₈₃T)]、N,N'-双烷烃基-5,5"-(3,3"-双辛烷基-2,2:5,2"-三噻吩)二酰胺[N,N'-dialkyl-5,5"-(3,3"-dioctyl-2,2:5,2"-terthiophene)dicarbox-amide(DNC_nDOc3T,n=5,8,16,18)]及N,N'-双十八烷基-5,5-(3,3-双辛烷基-2,2:5,2":5",2-四噻吩)二酰胺[N,N'-distearyl-5,5-(3,3-dioctyl-2,2:5,2":5",2-tetrathiophene)-dicarboxamide(DNC₁₈DOc4T)].研究结果表明,DNC₁₈₃T和DNC₅DOc3T同有机溶剂不形成凝胶.DNC_nDOc3T(n=8,16,18)和DNC₁₈DOc4T能同几种有机溶剂形成透明、半透明或不透明的凝胶.通过测定凝胶随温度变化的红外光谱(IR)、核磁共振氢谱(¹HNMR)、紫外光谱(UV),揭示出形成有机低分子凝胶的驱动力不仅有分子间氢键,而且π-π相互作用也是一个非常重要的因素.偏光光学显微镜、扫描电子显微镜(SEM)显示出有机低分子凝胶呈三维网络结构.另外,DNC₁₈Doc3T/盐/氰基苯凝胶体系在电场作用下发生可逆的颜色.     

碳纳米管-聚(3',4'-亚乙基二氧-2,2':5',2"-三噻吩)复合材料的制备及其电化学性能研究

通过Stille反应合成了3',4'-亚乙基二氧-2,2':5',2"-三噻吩(TET),并以其作为单体,采用化学氧化原位聚合方法在碳纳米管(CNT)的表面包覆新型聚(3',4'-亚乙基二氧.2,2':5',2"-三噻吩)(FTET),制备了PTET-CNT纳米复合材料.通过TEM、SEM和IR对其进行了表征,并利用循环伏安、交流阻抗、恒电流充放电等电化学测试方法,比较研究了复合材料以及碳纳米管在0.1 mol/L四乙基四氟硼酸铵(Et_4NPF_4)的乙腈溶液中的电化学行为.实验结果表明,在电流密度为3 mA/cm~2时,PTET-CNT复合材料的比电容为86 F/g,比原碳纳米管比电容20 F/g提高了3.3倍.基于这种复合材料的电容器的能量密度达到2.02 Wh/kg.     

二噻吩衍生物的合成及其线性、非线性光谱性质

合成了一系列二噻吩衍生物类有机合物：5，5'-二（对－N，N－二甲胺基苯乙 烯基）－2，2'－二噻吩（BMSBT）与5，5'－二（对－N，N－二乙胺基苯乙烯基）- 2,2'-二噻吩（BESBT），5,5'-二（对N－环丁胺基苯乙烯基）－2,2'－二噻吩（ BBSBT），5,5－二（对－N－咔唑基苯乙烯基）2-2'－二噻吩（BCSBT），并测定了 其吸收光谱、单光子荧光光谱和双光子荧光光谱。BMSBT，BESBT和BBSBT的单光子 荧光参数存在的很强的、规则的溶剂效应，表明其激发态的分子可能有较大的极性 。在800nm fs激光下测得BMSBT与BESBT在560nm附近（与单光子荧光发射峰波长接 近的位置）有较强的上转换荧光发射，上转换荧光强度与激发能量之间较好的平方 关系表明了双光子激发的机理，这种上转换荧光被称为双光子荧光。用以光子荧光 法测得BMSBT和BESBT的双光子吸收截面分别为54*10~(-50)(cm~4·s)/photon和 102*10~(-50)(cm~4·s)/photon。     

固态导电聚合物多色电致变色器件的制备

制备了基于聚3-甲基噻吩(P3MeT)和聚苯胺(PANI)的两种结构(侧面结构和垂直结构)固态导电聚合物多色电致变色器件(ECD). 采用电化学现场紫外-可见光谱法研究了侧面结构固态ECD的电致变色特性, P3MeT-ECD显示出蓝色和红色的可逆变化, PANI-ECD显示出墨绿色和黄绿色的可逆变化, 同时采用P3MeT和PANI作变色材料的P3MeT-PANI-ECD可以实现红、蓝、墨绿和草绿多色变化. 用激光雕刻微型化P3MeT-PANI变色层组装制得的侧面结构固态P3MeT-PANI-ECD控制合适电压也可多色变化. 另外, 用CeO₂-TiO₂作为P3MeT-PANI对电极的垂直结构固态P3MeT-PANI-ECD在实现红、蓝、墨绿和草绿多色变化的同时, 也可进行四色自由搭配选择.     

新型基于二氟苯并噻二唑和双噻吩丙烯腈共轭聚合物的设计、合成及光伏性能

设计并合成了两种基于5,6-二氟苯并噻二唑和双噻吩丙烯腈单元的D-A型共轭聚合物,聚[(5,6-二氟-苯[c][1,2,5]噻二唑-4,7-基)-交替-((E)-2,3-双(3'-(2-辛基十二烷基)-(2,2'-双噻吩)-5,5'-基)丙烯腈)](DFBT812)和聚[(5,6-二氟-苯[c][1,2,5]噻二唑-4,7-基)-交替-((E)-2,3-双(3'-(2-癸基十四烷基)-(2,2'-双噻吩)-5,5'-基)丙烯腈)](DFBT1014)作为聚合物太阳电池的给体材料。通过侧链工程,引入了2-辛基十二烷基和2-癸基十四烷基侧链实现对聚合物的溶解性,结晶性以及共混膜形貌的调节。研究结果表明,共轭聚合物DFBT812与PC_(61)BM的共混膜表现出更好的相分离尺度,能够促进载流子的传输和抽取。基于共轭聚合物DFBT812的太阳电池器件取得了0.87 V的开路电压和6.25%的能量转换效率。除此之外,基于DFBT812的聚合物太阳电池器件在活性层厚度为220 nm时仍然表现出6%的能量转换效率。     

一种高迁移率聚合物太阳能电池材料的合成及其器件表征

设计合成了一种中等带隙共轭聚合物,聚[N-(2-己基癸基)-2,2'-二噻吩-3,3'-二甲酰亚胺-交替共聚-5,5-(2,5-双(3-癸氧基噻吩)-2-噻吩基)-噻吩)](PBTI3T-O),其光谱吸收覆盖波长从400 nm到720 nm,具有较宽的吸收范围,同时易溶于氯苯溶剂,利于溶液加工。 PBTI3T-O与[6,6]-苯基-C71-丁酸异甲酯(PC₇₁BM)复合薄膜的空穴迁移率为5.90×10^-3 cm²/(V·s),该迁移率高于其它大部分聚合物电池给体材料。 由于PBTI3T-O较高的空穴迁移率,基于PBTI3T-O/PC₇₁BM的器件在活性层厚度为237 nm时,效率可以达到5.56%。 即使活性层膜厚进一步增加到约300 nm时,器件的效率仍能够保持其最高器件效率的97%,可见其具有在大面积加工工艺中的应用潜力。     

基于二噻吩并吡咯π桥的窄带隙非富勒烯受体材料在有机太阳能电池中的应用

以不同烷基取代的二噻吩并吡咯(DTP)为π桥,连接吲哒省并二噻吩(IDT)中间单元和氰基茚酮(IC)或二氟代氰基茚酮(2F-IC)末端基团,设计并合成了6个窄带隙的非富勒烯受体材料。 其中,IDTDTP-C₂C₂-H和IDTDTP-C₂C₂-F中的DTP单元以1-乙基丙基为侧链,IDTDTP-C₆C₆-H和IDTDTP-C₆C₆-F中的DTP单元以1-己基庚基为侧链,IDTDTP-C₁₂-H和IDTDTP-C₁₂-F中的DTP单元以十二烷基为侧链。 6个分子均具有较窄的光学带隙(1.37~1.44 eV)。 相比于以IC为末端基团的分子(IDTDTP-C₂C₂-H、IDTDTP-C₆C₆-H和IDTDTP-C₁₂-H),由于氟原子的拉电子效应,以2F-IC为末端基团的分子(IDTDTP-C₂C₂-F、IDTDTP-C₆C₆-F和IDTDTP-C₁₂-F)具有红移的吸收光谱,以及更低的最高分子占有轨道能级(HOMO)和最低分子空轨道(LUMO)能级。 以宽带隙聚合物聚[2,6-(4,8-双(5-(2-乙基己基))噻吩-2-基)-苯并[1,2-b:4,5-b']二噻吩-alt-5,5-(1',3'-二-2-噻吩)-5',7'-双(2-乙基己基)-苯并[1',2'-c:4',5'-c']二噻吩-4,8-二酮](PBDB-T)为给体材料,制备了有机太阳能电池器件。 PBDB-T:IDTDTP-C₆C₆-F共混薄膜具有较高且更平衡的空穴/电子迁移率,以及良好的形貌,基于PBDB-T:IDTDTP-C₆C₆-F的有机太阳能电池获得了6.94%的能量转换效率,开路电压为0.86 V,短路电流密度为13.56 mA/cm²,填充因子为59.5%。     

三联噻吩-吡唑啉类化合物的合成

以2-溴噻吩为原料,经溴代反应和格氏试剂反应制得2,2':5',5'-三联噻吩(1);1乙酰化后与4-取代苯甲醛发生亲核加成反应得到α,β-不饱和酮(3a～3e);3与80%水合肼发生关环反应,合成了5个α-三联噻吩-毗唑啉类化合物(4a～4e),收率74.3%～89.7%.其结构经H NMR,IR和元素分析表征.3和4均为新化合物.     

含铁磁耦合Ni3单元的均苯三甲酸桥联双层镍(II)配合物

使用均苯三甲酸与碳酸镍在水热条件下反应得到了一例新的二维双层Ni(II)配位聚合物Ni3(BTC)2(μ-H2O)26H2O。二维层包含syn-syn羧酸桥和水桥连接的三核Ni3单元,进一步用均苯三甲酸上的苯环连接成二维层状结构。磁性研究表明,相邻Ni2+离子间存在弱的铁磁耦合作用。水桥连镍离子的桥联键角为122.8(3)deg,所以通过该水桥镍离子间应该呈现反铁磁耦合。因此,实验结果证明了syn-syn羧酸桥传递铁磁耦合,而且铁磁耦合大于反铁磁作用,最终配合物呈弱的铁磁耦合。基于本工作和文献报道的含syn-syn 羧酸混合桥联镍配合物的磁性,我们总结出下面结论：Ni–O–C–O–Ni的共面性与否决定了配合物的磁性。共面性好的Ni–O–C–O–Ni导致中等强度的反铁磁耦合,而共面性差会消弱反铁磁作用,甚至出现由反铁磁变为铁磁耦合。标题配合物中羧酸桥所传递的铁磁性可能就归因于Ni–O–C–O–Ni的不共平面性。因此,与含羧酸桥的混合桥联双核铜(II)配合物类似,轨道补偿效应(the orbital complementary effect (OCE))对于解释水/羧酸混合桥联镍(II)配合物的磁性也同样适用。     

Creation of Functional Organic Gels Based on Oligothiophenes

Polymer gels have received a great deal of attention not only from scientific interest but also for their practical applications. Recently, low molecular-weight organic gels have also been receiving growing attention. However, their have been few studies of low molecular-weight organic gels in contrast to extensive studies of polymer gels. In order to develop a novel class of low-molecular-weight organic gels and to gain an insight into the relationship between molecular structures of gel-form…     

Electrochromic devices based on binuclear mixed valence compounds adsorbed on nanocrystalline semiconductors

A series of cyano-bridged binuclear mixed valence complexes of the general formula M-Ru(III)(NH(3))(4)pyCOOH [pyCOOH = isonicotinic acid; M = cis-Ru(bpy)(2)(CN)(2), 1 (bpy = 2,2' bipyridine); trans-Ru(py)(4)(CN)(2), 2 (py = pyridine); [Ru(CN)(6)](4)(-), 3; [Fe(CN)(6)](4)(-), 4] have been prepared and anchored through the carboxylic function to nanocrystalline TiO(2) or SnO(2) electrodes. The complexes display a reversible electrochromic behavior in the range of applied potential from -0.5 to +0.5 V, versus SCE. Tuning of the electronic transitions in the visible and near-infrared spectral regions is achieved through changes of the solvent and of the cyano-bridged metal moiety M.     

Fluorocarbon-modified organic semiconductors: molecular architecture, electronic, and crystal structure tuning of arene- versus fluoroarene-thiophene oligomer thin-film properties

We present here the systematic synthesis and comparative physicochemical characterization of a series of regiochemically varied and core size extension-modulated arene(perfluoroarene)-thiophene oligomers. The molecules investigated are: 5,5'-diphenyl-2,2':5',2':5',2'-quaterthiophene (1), 5,5'-bis[1-[4-(thien-2-yl)phenyl]]-2,2'-dithiophene (2), 4,4'-bis[5-(2,2'-dithiophenyl)]-biphenyl (3), 5,5'-diperfluorophenyl-2,2':5',2':5',2'-quaterthiophene (4), 5,5'-bis[1-[4-(thien-2-yl)perfluorophenyl]]-2,2'-dithiophene (5), 4,4'-bis[5-(2,2'-dithiophenyl)]-perfluorobiphenyl (6), 5,5'-diperfluorophenyl-2,2':5',2'-tertthiophene (7), 5,5'-diperfluorophenyl-2,2'-dihiophene (8), and 5,5-diperfluorophenylthiophene (9). Trends in optical absorption and emission parameters, molecular structures as defined by single-crystal X-ray diffraction, as well as electrochemical redox processes are described. The morphologies and microstructures of the vapor-deposited films grown over a range of growth temperatures have also been characterized. Field-effect transistor (FET) measurements demonstrate that all of these materials are FET-active and, depending on the molecular architecture, exhibit comparably good p- or n-type mobility when optimum film microstructural order is achieved. A very large n-channel mobility of approximately 0.5 cm2/Vs with I(on)/I(off) ratios > 10(8) is achieved for films of 4.     

Dinuclear palladium-azido complexes containing thiophene derivatives: reactivity toward organic isocyanides and isothiocyanates

Cyclopalladated tetranuclear Pd(II) complexes, [Pd2(micro-Cl)2(Y)]2 (Y = L1 or L2; H2L1 = di(2-pyridyl)-2,2'-bithiophene; H2L2 = 5,5'-di(2-pyridyl)-2,2':5',2'-terthiophene), containing two pyridyl-alpha, alpha'-disubstituted derivatives of thiophene were prepared. Treating these products with PR3 and subsequently with NaN3 produced the dinuclear Pd-azido complexes [(PR3)2(N3)Pd-Y-Pd(N3)(PR3)2] (Y = L1 or L2) or a cyclometallated complex [(PR3)(N3)Pd-Y'-Pd(N3)(PR3)] (Y' = C,N-L2). Reactions of these Pd-azido complexes with CN-Ar (Ar = 2,6-Me(2)C(6)H(3), 2,6-i-Pr(2)C(6)H(3)) or R-NCS (R = i-Pr, Et, allyl) led to the complexes containing end-on carbodiimido groups [(PMe3)2(N[double bond]C[double bond]N-Ar)Pd-Y-Pd(N[double bond]C[double bond]N-Ar)(PMe3)2] or S-coordinated tetrazole-thiolato groups {(PMe3)2[CN4(R)]S-Pd-Y-Pd-S[CN4)(R)](PMe3)2}. Interestingly, when treated with elemental sulfur, the carbodiimido complexes transformed into the cyclometallated derivatives, [(PMe3)(N[double bond]C[double bond]N-Ar)Pd-Y'-Pd(N[double bond]C[double bond]N-Ar)(PMe3)] (Y' = C,N-L1, C,N-L2). We also report the preparation of linear, thienylene-bridged dinuclear Pd complexes [L2(N3)Pd-X(or X')-Pd(N3)L2] (L = PMe3 or PMe2Ph; H2X = 2,2'-bithiophene or H2X' = 2,2':5',2'-terthiophene) and their reactivity toward organic isocyanide and isothiocyanates.     

High electron mobility in solution-cast and vapor-deposited phenacyl-quaterthiophene-based field-effect transistors: toward N-type polythiophenes

New carbonyl-functionalized quaterthiophenes, 5,5' '-diperfluorophenylcarbonyl-2,2':5',2' ':5' ',2' '-quaterthiophene [DFCO-4T], 5,5' '-diphenyl-2,2':5',2' ':5' ',2' '-quaterthiophene [DPCO-4T], and a polymer having the same basic motif as DFCO-4T, poly{1,4-bis[(3'-n-octyl-2,2'-dithiophene)carbonyl]-2,3,5,6-tetrafluorobenzene} [P(COFCO-4T)], have been synthesized, characterized, and the crystal structures of the molecules determined. Field-effect transistors fabricated with vapor-deposited and solution-cast films of DFCO-4T exhibit very high Ion:Ioff current ratios (up to 108) and electron mobilities up to approximately 0.51 and approximately 0.25 cm2.V-1.s-1, respectively. Solution-cast blends of P(COFCO-4T) and DFCO-4T (1:1 weight ratio) exhibit an electron mobility of approximately 0.01 cm2.V-1.s-1 (Ion:Ioff = 104).     

Mono- and dinuclear ruthenium(II) 1,6,7,12-tetraazaperylene complexes

We report the synthesis of free 1,6,7,12-tetraazaperylene (tape). Tape was obtained from 1,1'-bis-2,7-naphthyridine by potassium promoted cyclization followed by oxidation with air. Mono- and dinuclear ruthenium(II) 1,6,7,12-tetraazaperylene complexes of the general formulas [Ru(L-L)(2)(tape)](PF(6))(2), [1](PF(6))(2)-[5](PF(6))(2), and [{Ru(L-L)(2)}(2)(μ-tape)](PF(6))(4), [6](PF(6))(4)-[10](PF(6))(4), with{L-L = phen, bpy, dmbpy (4,4'-dimethyl-2,2'-bipyridine), dtbbpy (4,4'-ditertbutyl-2,2'-bipyridine) and tmbpy (4,4'5,5'-tetramethyl-2,2'-bipyridine)}, respectively, were synthesized. The X-ray structures of tape·2CHCl(3) and the mononuclear complexes [Ru(bpy)(2)(tape)](PF(6))(2)·0.5CH(3)CN·0.5toluene, [Ru(dmbpy)(2)(tape)](PF(6))(2)·2toluene and [Ru(dtbbpy)(2)(tape)](PF(6))(2)·3acetone·0.5H(2)O were solved. The UV-vis absorption spectra and the electrochemical behavior of the ruthenium(ii) tape complexes were explored and compared with the data of the analogous dibenzoeilatin (dbneil), 2,2'-bipyrimidine (bpym) and tetrapyrido[3,2-a:2',3'-c:3',2'-h:2',3'-j]phenazin (tpphz) species.     

Easily processable phenylene-thiophene-based organic field-effect transistors and solution-fabricated nonvolatile transistor memory elements

The synthesis of a new series of mixed phenylene-thiophene oligomers is reported; 2,5-bis(4-n-hexylphenyl)thiophene (dH-PTP, 1), 5,5'-bis(4-n-hexylphenyl)-2,2'-bithiophene (dH-PTTP, 2), 5,5' '-bis(4-n-hexylphenyl)-2,2':5',2' '-terthiophene (dH-PT(3)P, 3), 5,5' "-bis(4-n-hexylphenyl)-2,2':5',2' ':5' ',2' "-quaterthiophene (dH-PT(4)P, 4), 1,4-bis[5-(4-n-hexylphenyl)-2-thienyl]benzene (dH-PTPTP, 5), and 2,5-bis[4(4'-n-hexylphenyl)phenyl]thiophene (dH-PPTPP, 6) were characterized by (1)H NMR, elemental analysis, UV-visible spectroscopy, differential scanning calorimetry, and thermogravimetric analysis. Vacuum-evaporated and solution-cast films were characterized by X-ray diffraction and scanning electron microscopy. All compounds display high p-type carrier mobilities as evaporated (up to 0.09 cm(2)/Vs) and as solution-cast (up to 0.03 cm(2)/Vs) films on both Si/SiO(2) and ITO/GR (glass resin) substrates. The straightforwardly synthesized dH-PTTP (2) displays an unprecedented combination of mobility, on/off ratio, stability, and processability. Both dH-PTTP (2) and dH-PPTPP (6) display a reversible, tunable, and stable memory effect even as solution-cast devices, with turn-on characteristics shifting from accumulation mode to zero or depletion mode after a writing voltage V(w) is applied. The charge storage is distributed over the gate dielectric structure and is concentrated near the dielectric-semiconductor interface, as evidenced by the response of "floating gate" configuration devices. Simple nonvolatile elements have been fabricated by solution-only techniques on ITO substrates using spin-coated glass resin, solution-cast oligomeric semiconductors, and painted graphite paste electrodes.