分光光度法测定废钴钼催化剂中的钴含量

应用分光光度法测定废钴钼催化剂中的钴含量。优化的试验条件如下:1测定波长530nm;2柠檬酸钠溶液(掩蔽剂)质量浓度为250g·L-1;3亚硝酸钠溶液(氧化剂)质量浓度为5g·L-1;45g·L-1亚硝基红盐溶液(显色剂)用量为5mL;5硫酸(1+1)溶液用量为10mL。钴的质量在0.35mg以内与吸光度呈线性关系,钴的检出限(3S/N)为10μg·L-1,加标平均回收率为98.9%,测定值的相对标准偏差(n=15)为4.6%。     

〈331〉晶向ZnTe单晶的太赫兹辐射-探测性能理论研究

根据光整流效应辐射太赫兹理论,计算了〈331〉晶向ZnTe单晶的太赫兹辐射性能.通过与〈110〉、〈111〉晶向对比,当晶体方位角为0°或180°时,利用〈331〉晶向ZnTe单晶辐射太赫兹信号可以与〈111〉晶向相当,强于〈110〉晶向.利用电光取样原理,计算了〈331〉晶向ZnTe单晶的太赫兹探测性能,通过理论计算为〈331〉晶向ZnTe晶体有效辐射太赫兹波提供理论依据.     

《331》晶向ZnTe单晶的太赫兹辐射及探测

通过Te熔剂方法生长出〈331〉晶向的ZnTe体单晶,利用X射线衍射和红外透射显微技术对材料进行了测试.在钛-宝石激光器的泵浦下,利用〈331〉晶向的ZnTe晶体辐射-探测到太赫兹波,激发频谱可达5 THz左右.〈331〉晶向的ZnTe晶体表现出良好的太赫兹辐射性能.     

〈331〉晶向ZnTe单晶的太赫兹辐射-探测性能理论研究

根据光整流效应辐射太赫兹理论,计算了〈331〉晶向ZnTe单晶的太赫兹辐射性能.通过与〈110〉、〈111〉晶向对比,当晶体方位角为0°或180°时,利用〈331〉晶向ZnTe单晶辐射太赫兹信号可以与〈111〉晶向相当,强于〈110〉晶向.利用电光取样原理,计算了〈331〉晶向ZnTe单晶的太赫兹探测性能,通过理论计算为〈331〉晶向ZnTe 晶体有效辐射太赫兹波提供理论依据.     

离子液体作流动相添加剂高效液相色谱法分离莨菪类生物碱

建立了以离子液体1-辛基-甲基咪唑六氟磷酸盐(Omin PF6)为高效液相色谱流动相添加剂分离莨菪类生物碱的方法,探讨了离子液体的保留模型及机理。采用高效液相色谱法,考察了检测波长、有机相种类和比例、离子液体的种类、p H值和浓度、缓冲盐体系等因素对莨菪类生物碱色谱行为的影响。结果显示,当离子液体作为流动相添加剂时,可明显改善此类生物碱的分离效果,减少色谱峰的拖尾,提高分离效率。研究显示,Omin PF6浓度与容量因子的变化符合溶质计量置换保留模型(SDM-R),且保留过程以竞争吸附为主。     

Positive and Negative Pulse Etching Method of Porous Silicon Fabrication

We present a new method in which both positive and negative pulses are used to etch silicon for fabrication of porous silicon （PS） monolayer. The optical thickness and morphology of PS monolayer fabricated with different negative pulse voltages are investigated by means of reflectance spectra, scanning electron microscopy and photoluminescence spectra. It is found that with this method the PS monolayer is thicker and more uniform. The micropores also appear to be more regular than those made by common positive pulse etching. This phenomenon is attributed to the vertical etching effect of the PS monolayer being strengthened while lateral etching process is restrained. The explanation we propose is that negative pulse can help the hydrogen cations （H^＋） in the electrolyte move into the micropores of PS monolayer. These H^＋ ions combine with the Si atoms on the wall of new-formed micropores, leading to formation of Si-H bonds. The formation of Silt bonds results in a hole depletion layer near the micropore wall surface, which decreases hole density on the surface, preventing the micropore wall from being eroded laterally by F^- anions. Therefore during the positive pulse period the etching reaction occurs exclusively only at the bottom of the micropores where lots of holes are provided by the anode.