Influence of nanomechanical force on the electronic structure of InAs/GaAs quantum dots

We show nanomechanical force is useful to dynamically control the optical response of self-assembled quantum dots, giving a method to shift electron and heavy hole levels, interval of electron and heavy hole energy levels, and the emission wavelength of quantum dots (QDs). The strain, the electron energy levels, and heavy hole energy levels of InAs/GaAs(001) quantum dots with vertical nanomechanical force are investigated. Both the lattice mismatch and nanomechanical force are considered at the same time. The results show that the hydrostatic and the biaxial strains inside the QDs subjected to nanomechanical force vary with nanomechanical force. That gives the control for tailoring band gaps and optical response. Moreover, due to strain-modified energy, the band edge is also influenced by nanomechanical force. The nanomechanical force is shown to influence the band edge. As is well known, the band offset affects the electronic structure, which shows that the nanomechanical force is proven to be useful to tailor the emission wavelength of QDs. Our research helps to better understand how the nanomechanical force can be used to dynamically control the optics of quantum dots.     

应变补偿层对量子点生长影响的理论研究

量子点的光学特性与量子点的大小均匀性、密度、内部应变以及隔离层的厚度等有密切关系.文中从理论角度定量研究了GaNXAs1-X应变补偿层对InAs/GaAs量子点生长质量的改善作用,分析了应变补偿层对隔离层厚度减小的作用.讨论了应变补偿层的补偿位置和补偿层N组分X对量子点生长时局部应变和体系应变的补偿作用.分析了应变补偿层对体系应变的减少作用,并计算了相邻层量子点的垂直对准概率.研究结果对实验中应变补偿的优化和高质量量子点阵列的生长实现提供了理论依据.     

Donor-bound electron states in a two-dimensional quantum ring under uniform magnetic field

The electron states in a two-dimensional GaAs/AlGaAs quantum ring are theoretically studied in effective mass approximation. On-centre donor impurity and uniform magnetic field perpendicular to the ring plane are taken into account. The energy spectrum with different angular momentum changes dramatically with the geometry of the ring. The donor impurity reduces the energies with an almost fixed value; however, the magnetic field alters energies in a more complex way. For example, energy levels under magnetic field will cross each other when increasing the inner radius and outer radius of the ring, leading to the fact that the arrangement of energy levels is distinct in certain geometry of the ring. Moreover, energy levels with negative angular momentum exhibit the non-monotonous dependence on the increasing magnetic field.     

高长径比管式反应器内壁SiO2与TiO2钝化层的原子层沉积制备及抗积碳性能

采用原子层沉积技术(ALD)在不锈钢微通道管式反应器内壁沉积二氧化硅(SiO₂)和二氧化钛(TiO₂)薄膜, 以抑制碳氢燃料热裂解过程中由于金属催化作用导致的结焦. 使用石英晶体微天平(QCM)测得SiO₂和TiO₂薄膜的生长速率分别为0.15 nm/周期和0.11 nm/周期, 因此可以通过改变沉积周期数精确控制钝化层的厚度. 在结焦实验中, 当钝化膜层较薄时, 其抗积碳钝化作用较弱; 随着钝化薄膜厚度的增加, 其钝化作用逐渐增强, 微通道反应器的运行寿命显著延长. 实验表明, TiO₂薄膜的抗积碳钝化性能普遍优于SiO₂薄膜. 沉积周期数为1000的TiO₂膜层具有最佳的抗积碳钝化效果, 能够使反应器的运行时间延长4~5倍.     

Optimizing the top profile of a nanowire for maximum forward emission

The optimal top structure of a nanowire quantum emitter single photon source is significant in improving performance. Based on the axial symmetry of a cylindrical nanowire, this paper optimizes the top profile of a nanowire for the maximum forward emission by combining the geometry projection method and the finite element method. The results indicate that the nanowire with a cambered top has the stronger emission in the forward direction, which is helpful to improve the photon collection efficiency.     

原子层沉积氧化物包覆层对奥克托金感度的影响

通过原子层沉积(ALD)技术在微米级奥克托今(HMX)炸药颗粒表面包覆了氧化铝和氧化锌薄膜.采用X射线光电子能谱和扫描电子显微镜对包覆后HMX颗粒的表面化学组成和形貌进行了表征,利用差示扫描量热法和热重法分析了包覆后HMX的热分解行为.测试了ALD氧化物包覆的HMX的机械感度和静电火花感度,研究了HMX颗粒表面包覆层的组成和厚度对其感度的影响.结果表明,ALD氧化铝或氧化锌薄膜均能够完整、均匀地覆盖HMX颗粒的全部外表面,薄膜厚度在纳米尺度范围内精确可调.ALD氧化铝或氧化锌薄膜对HMX的热分解性能影响很小.由于金属氧化物具有很高的硬度,ALD氧化铝或氧化锌包覆膜不能降低HMX的机械感度.但氧化物薄膜具有一定的导电性,可降低HMX的静电火花感度.     

Kinetic Monte Carlo simulations of optimization of self-assembly quantum rings growth strategy based on substrate engineering

In this paper, the kinetic Monte Carlo simulations of the self-assembly quantum rings (QRs) based on the substrate engineering, which is related to the eventual shape of the formed quantum ring, are implemented. According to the simulation results, the availability of the QR with tunable size and the formation of smooth shape on the ideal flat substrate are checked. Through designing the substrate engineering, i.e., changing the depth, the separation and the ratio between the radius and the height of the embedded inclusions, the position and size of QR can be controlled and eventually the growth strategy of optimizing the self-assembly QRs is accomplished.     

Research of Equilibrium Composition Map in Conic Quantum Dots

We present equilibrium composition maps in InGaAs/GaAs conic strained quantum dots, using the finite element method and quadratic programming optimization method. The axis-symmetric model is adopted. We compare the steep islands with the shallow islands and determine the influence of entropie energy. The difference of equilibrium composition maps between the single dot and the quantum dot stacks is also discussed.     

Electronic structures of stacked layers quantum dots: influence of the non-perfect alignment and the applied electric field

Electronic structures of the artificial molecule comprising two truncated pyramidal quantum dots vertically coupled and embedded in the matrix are theoretically analysed via the finite element method.When the quantum dots are completely aligned,the electron energy levels decrease with the horizontally applied electric field.However,energy levels may have the maxima at non-zero electric field if the dots are staggered by a distance of several nanometers in the same direction of the electric field.In addition to shifting the energy levels,the electric field can also manipulate the electron wavefunctions confined in the quantum dots,in company with the non-perfect alignment.     

Kinetic Monte Carlo simulations of three-dimensional self-assembled quantum dot islands

By three-dimensional kinetic Monte Carlo simulations, the effects of the temperature, the flux rate, the total coverage and the interruption time on the distribution and the number of self-assembled InAs/GaAs(001) quantum dot(QD) islands are studied, which shows that a higher temperature, a lower flux rate and a longer growth time correspond to a better island distribution. The relations between the number of islands and the temperature and the flux rate are also successfully simulated. It is observed that for the total coverage lower than 0.5 ML, the number of islands decreases with the temperature increasing and other growth parameters fixed and the number of islands increases with the flux rate increasing when the deposition is lower than 0.6 ML and the other parameters are fixed.