Tunable Perpendicular Magnetic Anisotropy in Off-Stoichiometric Full-Heusler Alloy Co_2MnAl

Off-stoichiometric full-Heusler alloy Co_2 MnAl thin films with different thicknesses are epitaxially grown on GaAs(001) substrates by molecular-beam epitaxy. The composition of the films, close to Co_(1.65)Mn_(1.35)Al(CMA),is determined by x-ray photoelectron spectroscopy and energy dispersive spectroscopy. Tunable perpendicular magnetic anisotropy(PMA) from 3.41 Merg/cm~3 to 1.88 Merg/cm~3 with the thickness increasing from 10 nm to 30 nm is found,attributed to the relaxation of residual compressive strain. Moreover, comparing with the ultrathin CoFeB/MgO used in the conventional perpendicular magnetic tunnel junction, the CMA electrode has a higher magnetic thermal stability with more volume involved. The PMA in CMA films is sustainable up to 300℃,compatible with semiconductor techniques. This work provides a possibility for the development of perpendicular magnetized full-Heusler compounds with high thermal stability and spin polarization.     

声表面波单向换能结构反射与激励相位耦合模参量的精确简易提取方法

耦合模模型中的反射相位与激励相位对于精确设计具有电极宽度调制、分布式声反射换能器或自然单向结构的声表面波器件是必不可少的关键参数。传统的相位参量提取需要单独演算声场驻波场,涉及复杂的体波贡献项的推导和计算。为此提出利用有限元软件COMSOL对周期栅格的单个胞元建模,采用谐响应求解器计算得到禁带边缘处的位移驻波场,通过确定驻波节点的位置实现相位精确提取。与已有的研究结果对比,在证实该方法的正确性与有效性的基础上,精确提取了面向耐高温应用的硅酸镓镧(0°,138.5°,26.6°)切型上重金属金电极结构的相位参数,有效的抑制自然单向性,优化设计了单端口声表面波异步谐振器,仿真与实验结果吻合。      

Tunneling Anisotropic Magnetoresistance in L1_0-MnGa Based Antiferromagnetic Perpendicular Tunnel Junction

We report on the tunneling anisotropic magnetoresistance in antiferromagnetic perpendicular tunnel junction consisting of L1_0-MnGa/FeMn/AlO_x/Pt grown on GaAs(001) substrates by molecular-beam epitaxy. The temperature-dependent perpendicular exchange bias effect reveals an exchange coupling between ferromagnetic L1_0-MnGa and antiferromagnetic FeMn. The rotation of antiferromagnetic spins in FeMn can be driven by perpendicularly magnetized L1_0-MnGa due to the exchange-spring effect at the interface and leads to roomtemperature tunneling anisotropic magnetoresistance ratio of 0.86%. We also find that the tunneling anisotropic magnetoresistance strongly depends on temperature and angle. These results have broadened the material selection range for high performance antiferromagnetic spintronic devices.     

铁磁/非磁金属异质结中的拓扑霍尔效应

在铁磁/非磁金属异质结中,界面处的Dzyaloshinskii-Moriya相互作用会诱导诸如磁性斯格明子等手性磁畴壁结构的形成.当巡游电子通过手性磁畴壁结构时,会获得一个贝里相位,而相应的贝里曲率则等效于一个外磁场,它将诱导额外的霍尔效应,即拓扑霍尔效应.拓扑霍尔效应是当前磁性斯格明子和自旋电子学研究领域的热点之一.本文由实空间贝里相位出发,简要介绍了拓扑霍尔效应的物理机制;然后着重讨论了铁磁/非磁金属异质结中的拓扑霍尔效应,包括磁性多层膜中和MnGa/重金属双层膜中的拓扑霍尔效应.这两种结构都可以通过改变材料的厚度、种类、生长方式等调控界面Dzyaloshinskii-Moriya相互作用,从而有效地调控磁性斯格明子和拓扑霍尔效应.