Raman scattering investigation of C-doped a-SiO_2 after high energy heavy ion irradiations

Thermally grown amorphous SiO₂ films were implanted at room temperature with 100 keV C-ions to 5.0×10¹⁷ or 1.2×10¹⁸ ions/cm². These samples were irradiated at room temperature with 853 MeV Pb-ions to 5.0×10¹¹, 1.0×10¹², 5.0×10¹² ions/cm², or with 308 MeV Xe-ions to 1.0×10¹², 1.0×10¹³, 1.0×10¹⁴ ions/cm², respectively. Then the samples were investigated using micro-Raman spectroscopy. From the obtained Raman spectra, we deduced that Si--C bonds and sp² carbon sites were created and nano-inclusions may also be produced in the heavy ion irradiated C-doped SiO₂. Furthermore, some results show that Pb ion irradiations could produce larger size inclusions than Xe ions and the inclusion size decreased with increasing the irradiation fluence. The possible modification process of C-doped a-SiO₂ under swift heavy ion irradiations was briefly discussed.     

Influence of thermal and resonance neutron on fast neutron flux measurement by 239Pu fission chamber

The ²³⁹Pu fission chambers are widely used to measure fission spectrum neutron flux due to a flat response to fast neutrons. However, in the meantime the resonance and thermal neutrons can cause a significant influence on the measurement if they are moderated, which could be eliminated by using ¹⁰B and Cd covers. At a column enriched uranium fast neutron critical assembly, the fission reaction rates of ²³⁹Pu are measured as 1.791× 10^-16, 2.350×10^-16 and 1.385× 10^-15 per second for 15 mm thick ¹⁰B cover, 0.5 mm thick Cd cover, and no cover respectively, while the fission reaction rate of ²³⁹Pu is rapidly increased to 2.569× 10^-14 for a 20 mm thick polythene covering fission chamber. The average ²³⁹Pu fission cross-section of thermal and resonance neutrons is calculated to be 500 b and 24.95 b with the assumption of 1/v and 1/E spectra respectively, then thermal, resonance and fast neutron flux are achieved to be 2.30× 10⁶, 2.24× 10⁶ and 1.04× 10⁸ cm^-2·^-1.     

Measurement of J/ψ decays into ΛΛ π+π-

Based on 58 million J/ψ events collected by the BESⅡ detector at the BEPC, J/ψ→ΛΛ π⁺π^- is observed for the first time. The branching fraction is measured to be Br(J/ψ→ΛΛ π⁺π^-)=(4.30±0.13±0.99)×10^-3, excluding the decays to intermediate states, namely J/ψ→Ξ^-Ξ⁺, J/ψ→Σ(1385)^-Σ(1385)⁺, and J/ψ→Σ(1385)⁺Σ(1385)^-. The branching fractions for these intermediate resonance channels are measured to be:Br(J/ψ→Ξ^-Ξ⁺)=（0.90±0.03±0.18）×10^-3, Br(J/ψ→Σ(1385)^-Σ(1385)⁺)=(1.23±0.07±0.30)×10^-3,and Br(J/ψ→Σ(1385)⁺Σ(1385)^-)=(1.50±0.08±0.38)×10^-3, respectively. The angular distribution is of the form dN/d(cosθ)α(1+αcos²θ) with α=(0.35±0.29±0.06) for J/ψ→Ξ^-Ξ⁺, α=(-0.54±0.22±0.10) for J/ψ→Σ(1385)^-Σ(1385)⁺, and α=(-0.35±0.29±0.06) for J/ψ→Σ(1385)⁺Σ(1385)^-.     

泡沫镍制备中化学镀镍研究

 探讨了泡沫镍制备过程中，聚氨酯泡沫模板上的低温化学镀镍工艺，考察了镀液温度、pH值、主盐与还原剂浓度对沉积速率的影响。得出了适宜的工艺条件：硫酸镍30 g/L、次亚磷酸钠30 g/L、柠檬酸钠10 g/L、氯化铵30 g/L,镀液pH=9.0～9.5、温度45 ℃。在该工艺条件下，化学镀过程稳定，沉积速率可达40 mg/(cm³×h)。化学镀镍后经电镀、热解和还原退火处理制得泡沫镍，其样品呈3维网络状结构，密度为0.74 g/cm³,孔隙率为91.7%。     

Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation

Amorphous SiO₂ thin films with about 400—500 nm in thickness were thermally grown on single crystalline silicon. These SiO₂/Si samples were firstly implanted at room temperature (RT) with 100 keV carbon ions to 2.0×10¹⁷, 5.0×10¹⁷ or 1.2×10¹⁸ ions/cm², then irradiated at RT by 853 MeV Pb ions to 5.0×10¹¹, 1.0×10¹², 2.0×10¹² or 5.0×10¹² ions/cm², respectively. The variation of photoluminescence (PL) properties of these samples was analyzed at RT using a fluorescent spectroscopy. The obtained results showed that Pb-ion irradiations led to significant changes of the PL properties of the carbon ion implanted SiO₂ films. For examples, 5.0×10¹² Pb-ions/cm² irradiation produced huge blue and green light-emitters in 2.0×10¹⁷ C-ions/cm² implanted samples, which resulted in the appearance of two intense PL peaks at about 2.64 and 2.19 eV. For 5.0×10¹⁷ carbon-ions/cm² implanted samples, 2.0×10¹² Pb-ions/cm² irradiation could induce the formation of a strong and wide violet band at about 2.90 eV, whereas 5.0×10¹² Pb-ions/cm² irradiation could create double peaks of light emissions at about 2.23 and 2.83 eV. There is no observable PL peak in the 1.2×10¹⁸ carbon-ions/cm² implanted samples whether it was irradiated with Pb ions or not. All these results implied that special light emitters could be achieved by using proper ion implantation and irradiation conditions, and it will be very useful for the synthesis of new type of SiO₂-based light-emission materials.     

超高速摄影用高强度铝合金转镜动态特性的研究

转镜型超高速摄影机的信息容量取决于转镜的材料和横截面形状.本文首次对超高速摄影用高强度铝合金转镜从理论和实验两个方面进行了系统研究.研究表明:高强度铝合金是超高速分幅摄影机转镜的理想材料;当铝转镜截面形状为正三角形、镜面尺寸为(17×32.5)mm²时,转速已达(50×10⁴)rpm,镜面尺寸为(33×24)mm²时,转速已达(40×10⁴)rpm.     

2M阈式气体契仑科夫探测器

本文描述了为鉴别5—10GeV/c的π—K、K—P而研制的阈式气体契仑科夫探测器.速度分辨率达3.5×10^-5,对粒子的探测效率为99.99％,对阈能以下的粒子的排斥比为1.6×10^-5。     

表面层对1 064 nm高反射镜损伤阈值影响

 采用电子束蒸发的方法制备了３种具有不同表面层材料及结构的中心波长为1 064 nm的零度高反镜,３种膜系表面层分别为1/4波长光学厚度的HfO₂,1/2波长光学厚度的SiO₂,以及1/4波长光学厚度的SiO₂。光谱测试表明：三者在1 064 nm处均有较高的反射率（高于99.8%）,利用热透镜的方法测量得到３个膜系辐照激光正入射情况下,薄膜对光的吸收比例分别为3.0×10^-6,5.0×10^-6和6.5×10^-6,其损伤阈值分别为32.5,45.2和28.4 J/cm²。并在膜层内部电场分布和膜层材料物理特性的基础上分析了３种不同表面层膜系吸收和损伤阈值差别的原因。     

Branching fraction of the isospin violating process φ→ωπ^0

We have examined the parametrization of the e⁺e^- → ωπ⁰ cross section in the vicinity of the φ resonance and the extraction of the branching fraction of the isospin violating process φ → ωπ⁰ from experimental data. We found that there are two possible solutions of the branching fraction: one is 4 × 10^-5, and the other is 7 × 10^-3. The latter is two orders of magnitude higher than the former, which is the commonly accepted one.     

Semileptonic decays Bc→(ηc,J/Ψ)lv in the perturbative QCD approach

In this paper we study the semileptonic decays of B_c^-→(η_c,J/Ψ)l^-v_l. We first evaluate the B_c→(η_c,J/Ψ) transition form factors F₀(q²), F₊(q²), V(q²) and A_0,1,2(q²) by employing the pQCD factorization approach, and then we calculate the branching ratios for all considered semileptonic decays. Based on the numerical results and the phenomenological analysis, we find that: (a) the pQCD predictions for the values of the B_c→η_c and B_c→J/Ψ transition form factors agree well with those obtained by using other methods; (b) the pQCD predictions for the branching ratios of the considered decays are Br(B_c^-→η_c e^-v_e(μ^-v_μ)=(4.41_-1.09^+1.22)×10^-3, Br(B_c^-→η_cτ^-v_τ) =(1.37_-0.34^+0.37)×10^-3, Br(B_c^-→J/Ψ e^-v_e(μ^-v_μ)) =(10.03_-1.18^+1.33)×10^-3, and Br(B_c^-→J/Ψτ^-v_τ) =(2.92_-0.34^+0.40)×10^-3; and (c) we also define and calculate two ratios of the branching ratios R_ηc and R_J/Ψ, which will be tested by LHCb and the forthcoming Super-B experiments.     

超薄LiTaO3晶片的键合减薄技术

在制造红外热释电探测器阵列过程中，需要利用超薄钽酸锂(LiTaO₃)晶片作为红外热释电探测器件的敏感层。通常LiTaO₃晶片的厚度远厚于红外热释电探测器件要求的厚度，所以需要采用键合减薄技术对LiTaO₃晶片进行加工处理。键合减薄技术主要包括：苯并环丁烯（BCB）键合、铣磨、抛光、加热剥离、刻蚀BCB。加工后得到面积为10mm×10mm、厚度为25μm的超薄单晶LiTaO₃薄膜，晶片厚度、表面粗糙度和面形精度比较理想。测得了LT晶片减薄后的热释电系数为1.6×10^-4Cm^-2K^-1。得到的单晶LiTaO₃薄膜满足红外热释电探测器敏感层的要求。     

Response of chemical vapor deposition diamond detectors to X-ray

The outstanding properties of diamond, such as radiation hardness, high carrier mobility, high band gap and breakdown field, distinguish it as a good candidate for radiation detectors. The detector's performance is strongly limited by the concentration of defects (grain boundaries and/or impurities) in chemical vapor deposition (CVD) diamond. We report the response of free-standing CVD diamond with a thickness of 300 μm and area of 2×2 cm², synthesized by a hot filament chemical vapor deposition (HFCVD) technique, to 5.9 keV X-ray radiation from a ⁵⁵Fe source. The linear I-V characteristics indicate that CVD diamond has good ohmic contacts. This detector also shows good results such as dark-current of 10⁻⁸ A, photocurrent of 10⁻⁶ A, energy resolution <0.4%, and a high ratio of signal to noise.     

Role of surface and interface science in chemical vapor deposition diamond technology

Diamond is well known as the hardest material in nature. It also has other unique bulk physical and mechanical properties, such as very high thermal conductivity and broad optical transparency, which enable a number of new applications now that large areas of diamond can be fabricated by the new diamond plasma chemical vapor deposition (CVD) technologies. However, some of the most interesting properties of diamond, including the ability to be grown over large areas by CVD processes, result not from its bulk properties but from its special and unique surface chemistry. The surface chemistry derived properties are as remarkable as the bulk properties, and in the end may enable the development of new applications, technologies, and industries which are at least as important as those based on the bulk properties. Some of these surface properties are extreme chemical inertness, low surface energy, low friction coefficients, negative electron affinity, biological inertness, and high over-voltage electrode behavior. The surface science and some of the interesting ongoing research in these areas are explored and illustrated, and unresolved questions are highlighted.     

化学气相沉积金刚石探测器测量软X射线能谱

金刚石具备高热导率、高电阻率、高击穿电场、大的禁带宽度、介电系数小、载流子迁移率高以及抗辐射能力强等特性,可作为已应用于惯性约束聚变(ICF)实验X射线测量的硅与X射线二极管的较好替代品.随着化学气相沉积(CVD)技术的发展,CVD金刚石受到人们越来越多的关注.文中利用拉曼谱仪和X射线衍射仪对1mm×1mm×2mm,1mm×1mm×3mm两种规格CVD金刚石完成品质检测后,完成了CVD金刚石X射线探测器的集成制作,并在8ps激光器和神光III原型装置上开展了探测器时间特性等性能研究.实验结果表明,整个探测器系统前沿响应时间可达60ps,半高全宽可达120ps,与X射线二极管探测系统时间特性一致.在神光Ⅲ原型装置实验中,没有观察到探测器对3ω0激光的响应,说明探测器具有好的抗干扰能力.其测得的温度曲线与软X射线能谱仪测量结果一致,实现了X射线能谱测量的初步应用.     

室温下石墨烯的霍尔效应实验研究

对用化学气相沉积法(CVD)研制的长、宽均为1.23 cm,厚度为3个原子层尺寸的石墨烯样品,进行了室温下的霍尔效应相关研究。实验中电极与石墨烯之间有良好的欧姆接触。通过范德堡法测量了样品在磁场强度为0.353 T,不同电流强度下的霍尔电压,并对结果进行处理分析,得到石墨烯的霍尔系数RH=7.00×10-7m3/C、载流子浓度n=10.52×1024/m3、霍尔元件乘积灵敏度KH=6.87×102m2/C。     

Synthesis of flower-like WS2 by chemical vapor deposition

Flower-like tungsten disulfide (WS₂) with a diameter of 5-10 μm is prepared by chemical vapor deposition (CVD). Scanning electron microscopy (SEM), energy dispersive spectrometer (EDS), Raman spectroscopy, and ultraviolet-visible (UV-vis) spectroscopy are used to characterize its morphological and optical properties, and its growth mechanism is discussed. The key factors for the formation of flower-like WS₂ are determined. Firstly, the cooling process causes the generation of nucleation dislocations, and then the "leaf" growth of flower-like WS₂ is achieved by increasing the temperature.     

ZnS:I单晶降阻条件的选择

本文叙述了对碘化学输运法生长的ZnS:I单晶扩散Al杂质,制备低阻ZnS:I晶体的实验方法。在制备低阻ZnS:I单晶过程中,根据晶体内含I的浓度选择热退火条件,可较重复地得到Al浓度在10-1g/g量级,电阻率在10—102Ω·cm范围的低阻ZnS单晶。讨论认为,在ZnS:I单晶退火过程中,I的存在有助于Al杂质的扩散。     

Bright blue emission from Te-doped ZnS nanowires

Optical properties of Te-doped ZnS (ZnS:Te) nanowires (NWs) synthesized by a thermal chemical vapor deposition method were investigated by cathodeluminescence and photoluminescence (PL) measurements. ZnS:Te NWs exhibit the blue emission with the maximum peak at ∼440 nm at room temperature. We calculated Te-induced states on the valence band and conduction band in ZnS bulk crystal compared with PL peaks of ZnS:Te NWs. Temperature-dependent PL indicated that the activation energy of electron confined in ZnS:Te NWs is 85 meV. Blue light-emitting dot matrix displays were also fabricated using ZnS:Te NWs. This result suggested that ZnS:Te NWs could be applied as a blue-color-emitter on display devices.     

200万像素手机摄像镜头的设计

为了适用手机这一特殊领域对微型化和简单化的摄像镜头的需要,在传统球面玻璃镜片基础上结合非球面透镜理论,运用CODE V优化出一个用于可见波段且生产成本低廉的三镜片定焦摄像镜头系统。该镜头总长度小于5mm,并且有着很好的成像效果。为了结构紧凑并且能最大限度地降低生产成本,在结构设计中采用球面的玻璃镜片和非球面的塑料镜片,镜头的适应像素尺寸是2.52μm×2.52μm,相应的尼奎斯特频率是196条/mm,相关的调制传输函数值在尼奎斯特频率的1/2时达到40%,所成像面的球差控制在-0.05mm～0.05mm之内,最大畸变小于0.17%。该镜头可满足手机摄像镜头200万像素的要求。     

Compact High-performance Bulk Optical Isolator

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